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Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure
Authors:
Arka Karmakar,
Abdullah Al-Mahboob,
Christopher E. Petoukhoff,
Oksana Kravchyna,
Nicholas S. Chan,
Takashi Taniguchi,
Kenji Watanabe,
Keshav M. Dani
Abstract:
Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe2 and ReS2, nonradiative energy transf…
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Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe2 and ReS2, nonradiative energy transfer (ET) from higher to lower work function material (ReS2 to MoSe2) dominates over the traditional CT process with and without a charge-blocking interlayer. Without a charge-blocking interlayer, the HS area shows 3.6 times MoSe2 photoluminescence (PL) enhancement as compared to the MoSe2 area alone. After completely blocking the CT process, more than one order of magnitude higher MoSe2 PL emission was achieved from the HS area. This work reveals that the nature of this ET is truly a resonant effect by showing that in a similar type-II HS formed by ReS2 and WSe2, CT dominates over ET, resulting in a severely quenched WSe2 PL. This study not only provides significant insight into the competing interlayer processes, but also shows an innovative way to increase the PL quantum yield of the desired TMD material using ET process by carefully choosing the right material combination for HS.
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Submitted 7 October, 2021;
originally announced October 2021.
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Moiré-localized interlayer exciton wavefunctions captured by imaging its electron and hole constituents
Authors:
Ouri Karni,
Elyse Barré,
Vivek Pareek,
Johnathan D. Georgaras,
Michael K. L. Man,
Chakradhar Sahoo,
David R. Bacon,
Xing Zhu,
Henrique B. Ribeiro,
Aidan L. O'Beirne,
Jenny Hu,
Abdullah Al-Mahboob,
Mohamed M. M. Abdelrasoul,
Nicholas S. Chan,
Arka Karmakar,
Andrew J. Winchester,
Bumho Kim,
Kenji Watanabe,
Takashi Taniguchi,
Katayun Barmak,
Julien Madéo,
Felipe H. da Jornada,
Tony F. Heinz,
Keshav M. Dani
Abstract:
Interlayer excitons (ILXs) - electron-hole pairs bound across two atomically thin layered semiconductors - have emerged as attractive platforms to study exciton condensation, single-photon emission and other quantum-information applications. Yet, despite extensive optical spectroscopic investigations, critical information about their size, valley configuration and the influence of the moiré potent…
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Interlayer excitons (ILXs) - electron-hole pairs bound across two atomically thin layered semiconductors - have emerged as attractive platforms to study exciton condensation, single-photon emission and other quantum-information applications. Yet, despite extensive optical spectroscopic investigations, critical information about their size, valley configuration and the influence of the moiré potential remains unknown. Here, we captured images of the time- and momentum-resolved distribution of both the electron and the hole that bind to form the ILX in a WSe2/MoS2 heterostructure. We thereby obtain a direct measurement of the interlayer exciton diameter of ~5.4 nm, comparable to the moiré unit-cell length of 6.1 nm. Surprisingly, this large ILX is well localized within the moiré cell to a region of only 1.8 nm - smaller than the size of the exciton itself. This high degree of localization of the interlayer exciton is backed by Bethe-Salpeter equation calculations and demonstrates that the ILX can be localized within small moiré unit cells. Unlike large moiré cells, these are uniform over large regions, thus allowing the formation of extended arrays of localized excitations for quantum technology.
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Submitted 4 August, 2021;
originally announced August 2021.
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Unraveling the varied nature and roles of defects in hybrid halide perovskites with time-resolved photoemission electron microscopy
Authors:
Sofiia Kosar,
Andrew J. Winchester,
Tiarnan A. S. Doherty,
Stuart Macpherson,
Christopher E. Petoukhoff,
Kyle Frohna,
Miguel Anaya,
Nicholas S. Chan,
Julien Madéo,
Michael K. L. Man,
Samuel D. Stranks,
Keshav M. Dani
Abstract:
With rapidly growing photoconversion efficiencies, hybrid perovskite solar cells have emerged as promising contenders for next generation, low-cost photovoltaic technologies. Yet, the presence of nanoscale defect clusters, that form during the fabrication process, remains critical to overall device operation, including efficiency and long-term stability. To successfully deploy hybrid perovskites,…
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With rapidly growing photoconversion efficiencies, hybrid perovskite solar cells have emerged as promising contenders for next generation, low-cost photovoltaic technologies. Yet, the presence of nanoscale defect clusters, that form during the fabrication process, remains critical to overall device operation, including efficiency and long-term stability. To successfully deploy hybrid perovskites, we must understand the nature of the different types of defects, assess their potentially varied roles in device performance, and understand how they respond to passivation strategies. Here, by correlating photoemission and synchrotron-based scanning probe X-ray microscopies, we unveil three different types of defect clusters in state-of-the-art triple cation mixed halide perovskite thin films. Incorporating ultrafast time-resolution into our photoemission measurements, we show that defect clusters originating at grain boundaries are the most detrimental for photocarrier trap**, while lead iodide defect clusters are relatively benign. Hexagonal polytype defect clusters are only mildly detrimental individually, but can have a significant impact overall if abundant in occurrence. We also show that passivating defects with oxygen in the presence of light, a previously used approach to improve efficiency, has a varied impact on the different types of defects. Even with just mild oxygen treatment, the grain boundary defects are completely healed, while the lead iodide defects begin to show signs of chemical alteration. Our findings highlight the need for multi-pronged strategies tailored to selectively address the detrimental impact of the different defect types in hybrid perovskite solar cells.
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Submitted 26 July, 2021;
originally announced July 2021.
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Local Nanoscale Defective Phase Impurities Are the Sites of Degradation in Halide Perovskite Devices
Authors:
Stuart Macpherson,
Tiarnan A. S. Doherty,
Andrew J. Winchester,
Sofiia Kosar,
Duncan N. Johnstone,
Yu-Hsien Chiang,
Krzystof Galkowski,
Miguel Anaya,
Kyle Frohna,
Affan N. Iqbal,
Bart Roose,
Zahra Andaji-Garmaroudi,
Paul A. Midgley,
Keshav M. Dani,
Samuel D. Stranks
Abstract:
Halide perovskites excel in the pursuit of highly efficient thin film photovoltaics, with power conversion efficiencies reaching 25.5% in single junction and 29.5% in tandem halide perovskite/silicon solar cell configurations. Operational stability of perovskite solar cells remains a barrier to their commercialisation, yet a fundamental understanding of degradation processes, including the specifi…
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Halide perovskites excel in the pursuit of highly efficient thin film photovoltaics, with power conversion efficiencies reaching 25.5% in single junction and 29.5% in tandem halide perovskite/silicon solar cell configurations. Operational stability of perovskite solar cells remains a barrier to their commercialisation, yet a fundamental understanding of degradation processes, including the specific sites at which failure mechanisms occur, is lacking. Recently, we reported that performance-limiting deep sub-bandgap states appear in nanoscale clusters at particular grain boundaries in state-of-the-art $Cs_{0.05}FA_{0.78}MA_{0.17}Pb(I_{0.83}Br_{0.17})_{3}$ (MA=methylammonium, FA=formamidinium) perovskite films. Here, we combine multimodal microscopy to show that these very nanoscale defect clusters, which go otherwise undetected with bulk measurements, are sites at which degradation seeds. We use photoemission electron microscopy to visualise trap clusters and observe that these specific sites grow in defect density over time under illumination, leading to local reductions in performance parameters. Scanning electron diffraction measurements reveal concomitant structural changes at phase impurities associated with trap clusters, with rapid conversion to metallic lead through iodine depletion, eventually resulting in pinhole formation. By contrast, illumination in the presence of oxygen reduces defect densities and reverses performance degradation at these local clusters, where phase impurities instead convert to amorphous and electronically benign lead oxide. Our work shows that the trap** of charge carriers at sites associated with phase impurities, itself reducing performance, catalyses redox reactions that compromise device longevity. Importantly, we reveal that both performance losses and intrinsic degradation can be mitigated by eliminating these defective clusters.
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Submitted 20 July, 2021;
originally announced July 2021.
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Nanoscale Chemical Heterogeneity Dominates the Optoelectronic Response over Local Electronic Disorder and Strain in Alloyed Perovskite Solar Cells
Authors:
Kyle Frohna,
Miguel Anaya,
Stuart Macpherson,
Jooyoung Sung,
Tiarnan A. S. Doherty,
Yu-Hsien Chiang,
Andrew J. Winchester,
Keshav M. Dani,
Akshay Rao,
Samuel D. Stranks
Abstract:
Halide perovskites perform remarkably in optoelectronic devices including tandem photovoltaics. However, this exceptional performance is striking given that perovskites exhibit deep charge carrier traps and spatial compositional and structural heterogeneity, all of which should be detrimental to performance. Here, we resolve this long-standing paradox by providing a global visualisation of the nan…
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Halide perovskites perform remarkably in optoelectronic devices including tandem photovoltaics. However, this exceptional performance is striking given that perovskites exhibit deep charge carrier traps and spatial compositional and structural heterogeneity, all of which should be detrimental to performance. Here, we resolve this long-standing paradox by providing a global visualisation of the nanoscale chemical, structural and optoelectronic landscape in halide perovskite devices, made possible through the development of a new suite of correlative, multimodal microscopy measurements combining quantitative optical spectroscopic techniques and synchrotron nanoprobe measurements. We show that compositional disorder dominates the optoelectronic response, while nanoscale strain variations even of large magnitude (~1 %) have only a weak influence. Nanoscale compositional gradients drive carrier funneling onto local regions associated with low electronic disorder, drawing carrier recombination away from trap clusters associated with electronic disorder and leading to high local photoluminescence quantum efficiency. These measurements reveal a global picture of the competitive nanoscale landscape, which endows enhanced defect tolerance in devices through spatial chemical disorder that outcompetes both electronic and structural disorder.
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Submitted 9 June, 2021;
originally announced June 2021.
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Visualization of two-dimensional transition dipole moment texture in momentum space using high-harmonic generation spectroscopy
Authors:
K. Uchida,
V. Pareek,
K. Nagai,
K. M. Dani,
K. Tanaka
Abstract:
Highly nonlinear optical phenomena can provide access to properties of electronic systems which are otherwise difficult to access through conventional linear optical spectroscopies. In particular, high harmonic generation (HHG) in crystalline solids is strikingly different from that in atomic gases, and it enables us to access electronic properties such as the band structure, Berry curvature, and…
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Highly nonlinear optical phenomena can provide access to properties of electronic systems which are otherwise difficult to access through conventional linear optical spectroscopies. In particular, high harmonic generation (HHG) in crystalline solids is strikingly different from that in atomic gases, and it enables us to access electronic properties such as the band structure, Berry curvature, and valence electron density. Here, we show that polarization-resolved HHG measurements can be used to probe the transition dipole moment (TDM) texture in momentum space in two dimensional semiconductors. TDM is directly related to the internal structure of the electronic system and governs the optical properties. We study HHG in black phosphorus, which offers a simple two-band system, with bandgap resonant excitation. We observed a unique crystal-orientation dependence of the HHG yields and polarizations and succeeded in reconstructing the TDM texture related to the inter-atomic bonding structure. Our results demonstrate the potential of high harmonic spectroscopy for probing electronic wavefunctions in crystalline solids.
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Submitted 8 April, 2021; v1 submitted 16 June, 2020;
originally announced June 2020.