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Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates
Authors:
Ivan García,
Laura Barrutia,
Shabnam Dadgostar,
Manuel Hinojosa,
Andrew Johnson,
Ignacio Rey-Stolle
Abstract:
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical analysis performed using realistic device parameters indicates that the GaInAs middle cell can be drastically thinned to 1000 nm while increasing its In content to 8%…
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Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical analysis performed using realistic device parameters indicates that the GaInAs middle cell can be drastically thinned to 1000 nm while increasing its In content to 8% with an efficiency loss in the 3-junction cell below 3%. The experimental results show that the formation of macroscopic cracks is prevented in thinned GaInAs/Ge 2-junction and GaInP/GaInAs/Ge 3-junction cells. These prototype crack-free multijunction cells demonstrate the concept and were used to rule out any possible component integration issue. The performance metrics are limited by the high threading dislocation density over 2e7cm-2 in the virtual substrates used, but an almost current matched, crack-free, thinned 3-junction solar cell is demonstrated, and the pathway towards solar cells with higher voltages identified.
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Submitted 7 April, 2021;
originally announced April 2021.
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Point-defects assisted Zn-diffusion in AlGaInP/GaInP systems during the MOVPE growth of inverted multijunction solar cells
Authors:
Manuel Hinojosa,
Iván García,
Shabnam Dadgostar,
Carlos Algora
Abstract:
We investigate the dynamics of Zn diffusion in MOVPE-grown AlGaInP/GaInP systems by the comparison of different structures that emulate the back-surface field (BSF) and base layers of a GaInP subcell integrated into an inverted multijunction solar cell structure. Through the analysis of secondary ion mass spectroscopy (SIMS), electrochemical capacitance-voltage (ECV) and spectrally resolved cathod…
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We investigate the dynamics of Zn diffusion in MOVPE-grown AlGaInP/GaInP systems by the comparison of different structures that emulate the back-surface field (BSF) and base layers of a GaInP subcell integrated into an inverted multijunction solar cell structure. Through the analysis of secondary ion mass spectroscopy (SIMS), electrochemical capacitance-voltage (ECV) and spectrally resolved cathodoluminescence (CL) measurements, we provide experimental evidence that 1) the Zn diffusion is enhanced by point defects injected during the growth of the tunnel junction cathode layer; 2) the intensity of the process is determined by the cathode do** level and it happens for different cathode materials; 3) the mobile Zn is positively charged and 4) the diffusion mechanism reduces the CuPt ordering in GaInP. We demonstrate that using barrier layers the diffusion of point defects can be mitigated, so that they do not reach Zn-doped layers, preventing its diffusion. Finally, the impact of Zn diffusion on solar cells with different Zn-profiles is evaluated by comparing the electrical I-V curves at different concentrations. The results rule out the introduction of internal barriers in the BSF but illustrate how Zn diffusion under typical growth condition can reach the emitter and dramatically affect the series resistance, among other effects.
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Submitted 27 December, 2020;
originally announced December 2020.
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Efficient extraction of zero-phonon-line photons from single nitrogen-vacancy centers in an integrated GaP-on-diamond platform
Authors:
Michael Gould,
Emma R. Schmidgall,
Shabnam Dadgostar,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL pho…
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Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL photon into the guided waveguide mode after optical excitation can reach 9%, due to a combination of resonant enhancement of the ZPL emission and efficient coupling between the resonator and waveguide. We verify the single-photon nature of the emission and experimentally demonstrate both high in-waveguide photon numbers and substantial Purcell enhancement for a set of devices. These devices may enable scalable integrated quantum networks based on NV centers.
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Submitted 15 June, 2016; v1 submitted 6 June, 2016;
originally announced June 2016.
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A Large-Scale GaP-on-Diamond Integrated Photonics Platform for NV Center-Based Quantum Information
Authors:
Michael Gould,
Srivatsa Chakravarthi,
Ian R. Christen,
Nicole Thomas,
Shabnam Dadgostar,
Yuncheng Song,
Minjoo Larry Lee,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place th…
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We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.
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Submitted 16 October, 2015;
originally announced October 2015.
