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Quantitative measurement of combustion gases in harsh environments using NDIR spectroscopy
Authors:
Christian Niklas,
Stephan Bauke,
Fabian Müller,
Kai Golibrzuch,
Hainer Wackerbarth,
Georgios Ctistis
Abstract:
The global climate change calls for a more environmental friendly use of energy and has led to stricter limits and regulations for the emissions of various greenhouse gases. Consequently, there is nowadays an increasing need for the detection of exhaust and natural gases. This need leads to an ever-growing market for gas sensors, which, at the moment, is dominated by chemical sensors. Yet, the inc…
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The global climate change calls for a more environmental friendly use of energy and has led to stricter limits and regulations for the emissions of various greenhouse gases. Consequently, there is nowadays an increasing need for the detection of exhaust and natural gases. This need leads to an ever-growing market for gas sensors, which, at the moment, is dominated by chemical sensors. Yet, the increasing demands to also measure under harsh environmental conditions pave the way for non-invasive measurements and thus to optical detection techniques. Here, we present the development of a non-dispersive infrared absorption spectroscopy (NDIR) method for application to optical detection systems operating under harsh environments.
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Submitted 28 September, 2018;
originally announced October 2018.
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Programmable two-photon quantum interference in $10^3$ channels in opaque scattering media
Authors:
Tom A. W. Wolterink,
Ravitej Uppu,
Georgios Ctistis,
Willem L. Vos,
Klaus -J. Boller,
Pepijn W. H. Pinkse
Abstract:
We investigate two-photon quantum interference in an opaque scattering medium that intrinsically supports $10^6$ transmission channels. By adaptive spatial phase-modulation of the incident wavefronts, the photons are directed at targeted speckle spots or output channels. From $10^3$ experimentally available coupled channels, we select two channels and enhance their transmission, to realize the equ…
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We investigate two-photon quantum interference in an opaque scattering medium that intrinsically supports $10^6$ transmission channels. By adaptive spatial phase-modulation of the incident wavefronts, the photons are directed at targeted speckle spots or output channels. From $10^3$ experimentally available coupled channels, we select two channels and enhance their transmission, to realize the equivalent of a fully programmable $2\times2$ beam splitter. By sending pairs of single photons from a parametric down-conversion source through the opaque scattering medium, we observe two-photon quantum interference. The programmed beam splitter need not fulfill energy conservation over the two selected output channels and hence could be non-unitary. Consequently, we have the freedom to tune the quantum interference from bunching (Hong-Ou-Mandel-like) to antibunching. Our results establish opaque scattering media as a platform for high-dimensional quantum interference that is notably relevant for boson sampling and physical-key-based authentication.
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Submitted 3 November, 2015;
originally announced November 2015.
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Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect
Authors:
Emre Yüce,
Georgios Ctistis,
Julien Claudon,
Jean-Michel Gérard,
Willem L. Vos
Abstract:
We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond. We investigate experimentally and theoretically the role of several main parameters: the material backbone and its electronic bandgap, the pump power,…
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We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond. We investigate experimentally and theoretically the role of several main parameters: the material backbone and its electronic bandgap, the pump power, the quality factor, and the duration of the switch pulse. The magnitude of the shift is reduced when the backbone of the central $λ-$layer has a greater electronic bandgap; pum** with photon energies near the bandgap resonantly enhances the switched magnitude. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time that is set by the quality factor. We provide the settings for the essential parameters so that the frequency shift of the cavity resonance can be increased to one linewidth.
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Submitted 7 March, 2016; v1 submitted 11 August, 2015;
originally announced August 2015.
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Femtosecond-scale switching based on excited free-carriers
Authors:
Y. Sivan,
G. Ctistis,
E. Yuce,
A. P. Mosk
Abstract:
We describe novel optical switching schemes operating at femtosecond time scales by employing free carrier (FC) excitation. Such unprecedented switching times are made possible by spatially patterning the density of the excited FCs. In the first realization, we rely on diffusion, i.e., on the nonlocality of the FC nonlinear response of the semiconductor, to erase the initial FC pattern and, thereb…
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We describe novel optical switching schemes operating at femtosecond time scales by employing free carrier (FC) excitation. Such unprecedented switching times are made possible by spatially patterning the density of the excited FCs. In the first realization, we rely on diffusion, i.e., on the nonlocality of the FC nonlinear response of the semiconductor, to erase the initial FC pattern and, thereby, eliminate the reflectivity of the system. In the second realization, we erase the FC pattern by launching a second pump pulse at a controlled delay. We discuss the advantages and limitations of the proposed approaches and demonstrate their potential applicability for switching ultrashort pulses propagating in silicon waveguides. We show switching efficiencies of up to $50\%$ for $100$ fs pump pulses, which is an unusually high level of efficiency for such a short interaction time, a result of the use of the strong FC nonlinearity. Due to limitations of saturation and pattern effects, these schemes can be employed for switching applications that require femtosecond features but standard repetition rates. Such applications include switching of ultrashort pulses, femtosecond spectroscopy (gating), time-reversal of short pulses for aberration compensation, and many more. This approach is also the starting point for ultrafast amplitude modulations and a new route toward the spatio-temporal sha** of short optical pulses.
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Submitted 15 April, 2015;
originally announced April 2015.
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Observation of nonlinear bands in near-field scanning optical microscopy of a photonic-crystal waveguide
Authors:
Amandev Singh,
Georgios Ctistis,
Simon R. Huisman,
Jeroen P. Korterik,
Allard P. Mosk,
Jennifer L. Herek,
Pepijn W. H. Pinkse
Abstract:
We have measured the photonic bandstructure of GaAs photonic-crystal waveguides with high energy and momentum resolution using near-field scanning optical microscopy. Intriguingly, we observe additional bands that are not predicted by eigenmode solvers, as was recently demonstrated by Huisman et al. [Phys. Rev. B 86, 155154 (2012)]. We study the presence of these additional bands by performing mea…
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We have measured the photonic bandstructure of GaAs photonic-crystal waveguides with high energy and momentum resolution using near-field scanning optical microscopy. Intriguingly, we observe additional bands that are not predicted by eigenmode solvers, as was recently demonstrated by Huisman et al. [Phys. Rev. B 86, 155154 (2012)]. We study the presence of these additional bands by performing measurements of these bands while varying the incident light power, revealing a non-linear power dependence. Here, we demonstrate experimentally and theoretically that the observed additional bands are caused by a waveguide-specific near- field tip effect not previously reported, which can significantly phase-modulate the detected field.
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Submitted 6 October, 2014;
originally announced October 2014.
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Nonlinear frequency conversion is controlled by vacuum fluctuations
Authors:
Emre Yüce,
Georgios Ctistis,
Julien Claudon,
Jean-Michel Gérard,
Willem L. Vos
Abstract:
Ever since the advent of nonlinear optics, the generation of light by frequency-conversion is drawing continued attention, and leading to emerging applications such as supercontinuum sources for ultra stable clocks and advanced microscopy. A modern approach to frequency-conversion is to switch light confined in micro- and nanocavity resonances to enable on-chip operation. Supposedly, nonlinear fre…
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Ever since the advent of nonlinear optics, the generation of light by frequency-conversion is drawing continued attention, and leading to emerging applications such as supercontinuum sources for ultra stable clocks and advanced microscopy. A modern approach to frequency-conversion is to switch light confined in micro- and nanocavity resonances to enable on-chip operation. Supposedly, nonlinear frequency conversion in such confined media differs from traditional non-linear optics in three key features regarding output spectrum, frequency shift, and critical time scale. Therefore, we switch GaAs-AlAs microcavities by the electronic Kerr effect, and study a range of quality factors to bridge the confined and the traditional non-linear regimes. We uncover the key role of the density of vacuum fluctuations, i.e., the local density of optical states (LDOS) for newly generated frequencies, a concept inspired by cavity quantum electrodynamics (cQED). As a result, we succeed to establish a framework, which not only describes nonlinear optics both in traditional bulk and in confined media but also opens a new control dimension in changing the color of light.
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Submitted 15 April, 2019; v1 submitted 13 June, 2014;
originally announced June 2014.
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Differential ultrafast all-optical switching of the resonances of a micropillar cavity
Authors:
Henri Thyrrestrup,
Emre Yüce,
Georgios Ctistis,
Julien Claudon,
Willem L. Vos,
Jean-Michel Gérard
Abstract:
We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relax…
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We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free carriers, their spatial diffusion and surface recombination at micropillar sidewalls.
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Submitted 24 September, 2014; v1 submitted 9 January, 2014;
originally announced January 2014.
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All-optical Switching of a Microcavity Repeated at Terahertz Rates
Authors:
Emre Yüce,
Georgios Ctistis,
Julien Claudon,
Emmanuel Dupuy,
Robin D. Buijs,
Bob de Ronde,
Allard P. Mosk,
Jean-Michel Gérard,
Willem L. Vos
Abstract:
We have performed ultrafast pump-probe experiments on a GaAs-AlAs microcavity with a resonance near 1300 nm in the "original" telecom band. We exploit the virtually instantaneous electronic Kerr effect to repeatedly and reproducibly switch a GaAs-AlAs planar microcavity. We achieve repetition times as fast as 300 fs, thereby breaking the THz modulation barrier. The rate of the switching in our exp…
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We have performed ultrafast pump-probe experiments on a GaAs-AlAs microcavity with a resonance near 1300 nm in the "original" telecom band. We exploit the virtually instantaneous electronic Kerr effect to repeatedly and reproducibly switch a GaAs-AlAs planar microcavity. We achieve repetition times as fast as 300 fs, thereby breaking the THz modulation barrier. The rate of the switching in our experiments is only determined by optics and not by material related relaxation. Our results offer novel opportunities for fundamental studies of cavity-QED and optical information processing in sub-picosecond time scale.
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Submitted 8 November, 2012;
originally announced November 2012.
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Competition between electronic Kerr and free carrier effects in an ultimate-fast optically switched semiconductor microcavity
Authors:
E. Yüce,
G. Ctistis,
J. Claudon,
E. Dupuy,
K. J. Boller,
J. M. Gérard,
W. L. Vos
Abstract:
We have performed ultrafast pump-probe experiments on a GaAs-AlAs microcavity with a resonance near 1300 nm in the "original" telecom band. We concentrate on ultimate-fast optical switching of the cavity resonance that is measured as a function of pump-pulse energy. We observe that at low pump-pulse energies the switching of the cavity resonance is governed by the instantaneous electronic Kerr eff…
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We have performed ultrafast pump-probe experiments on a GaAs-AlAs microcavity with a resonance near 1300 nm in the "original" telecom band. We concentrate on ultimate-fast optical switching of the cavity resonance that is measured as a function of pump-pulse energy. We observe that at low pump-pulse energies the switching of the cavity resonance is governed by the instantaneous electronic Kerr effect and is achieved within 300 fs. At high pump-pulse energies the index change induced by free carriers generated in the GaAs start to compete with the electronic Kerr effect and reduce the resonance frequency shift. We have developed an analytic model which predicts this competition in agreement with the experimental data. Our model includes a new term in the intensity-dependent refractive index that considers the effect of the probe pulse intensity, which is resonantly enhanced by the cavity. We calculate the effect of the resonantly enhanced probe light on the refractive index change induced by the electronic Kerr effect for cavities with different quality factors. By exploiting the linear regime where only the electronic Kerr effect is observed, we manage to retrieve the nondegenerate third order nonlinear susceptibility for GaAs from the cavity resonance shift as a function of pump-pulse energy.
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Submitted 17 August, 2012; v1 submitted 1 May, 2012;
originally announced May 2012.
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Photonic-Crystal Waveguides with Disorder: Measurement of a Band-Edge Tail in the Density of States
Authors:
S. R. Huisman,
G. Ctistis,
S. Stobbe,
A. P. Mosk,
J. L. Herek,
A. Lagendijk,
P. Lodahl,
W. L. Vos,
P. W. H. Pinkse
Abstract:
We measure localized and extended mode profiles at the band edge of slow-light photonic-crystal waveguides using phase-sensitive near-field microscopy. High-resolution band structures are obtained and interpreted, allowing the retrieval of the optical density of states (DOS). This constitutes a first observation of the DOS of a periodic system with weak disorder. The Van Hove singularity in the DO…
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We measure localized and extended mode profiles at the band edge of slow-light photonic-crystal waveguides using phase-sensitive near-field microscopy. High-resolution band structures are obtained and interpreted, allowing the retrieval of the optical density of states (DOS). This constitutes a first observation of the DOS of a periodic system with weak disorder. The Van Hove singularity in the DOS expected at the band edge of an ideal 1D periodic structure is removed by the disorder. The Anderson-localized states form a "tail" in the density of states, as predicted by Lifshitz for solid-state systems.
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Submitted 3 January, 2012;
originally announced January 2012.
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Extraction of optical Bloch modes in a photonic-crystal waveguide
Authors:
S. R. Huisman,
G. Ctistis,
S. Stobbe,
J. L. Herek,
P. Lodahl,
W. L. Vos,
P. W. H. Pinkse
Abstract:
We perform phase-sensitive near-field scanning optical microscopy on photonic-crystal waveguides. The observed intricate field patterns are analyzed by spatial Fourier transformations, revealing several guided TE- and TM-like modes. Using the reconstruction algorithm proposed by Ha, et al. (Opt. Lett. 34 (2009)), we decompose the measured two-dimensional field pattern in a superposition of propaga…
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We perform phase-sensitive near-field scanning optical microscopy on photonic-crystal waveguides. The observed intricate field patterns are analyzed by spatial Fourier transformations, revealing several guided TE- and TM-like modes. Using the reconstruction algorithm proposed by Ha, et al. (Opt. Lett. 34 (2009)), we decompose the measured two-dimensional field pattern in a superposition of propagating Bloch modes. This opens new possibilities to study specific modes in near-field measurements. We apply the method to study the transverse behavior of a guided TE-like mode, where the mode extends deeper in the surrounding photonic crystal when the band edge is approached.
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Submitted 4 January, 2012; v1 submitted 25 October, 2011;
originally announced October 2011.
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Controlling the quality factor of a tuning-fork resonance between 9 K and 300 K for scanning-probe microscopy
Authors:
Georgios Ctistis,
Eric Frater,
Simon R. Huisman,
Jeroen P. Korterik,
Jennifer L. Herek,
Willem L. Vos,
Pepijn W. H. Pinkse
Abstract:
We study the dynamic response of a mechanical quartz tuning fork in the temperature range from 9 K to 300 K. Since the quality factor Q of the resonance strongly depends on temperature, we implement a procedure to control the quality factor of the resonance. We show that we are able to dynamically change the quality factor and keep it constant over the whole temperature range. This procedure is su…
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We study the dynamic response of a mechanical quartz tuning fork in the temperature range from 9 K to 300 K. Since the quality factor Q of the resonance strongly depends on temperature, we implement a procedure to control the quality factor of the resonance. We show that we are able to dynamically change the quality factor and keep it constant over the whole temperature range. This procedure is suitable for applications in scanning probe microscopy.
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Submitted 31 March, 2011; v1 submitted 30 March, 2011;
originally announced March 2011.
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Ultimate fast optical switching of a planar microcavity in the telecom wavelength range
Authors:
Georgios Ctistis,
Emre Yüce,
Alex Hartsuiker,
Julien Claudon,
Maela Bazin,
Jean-Michel Gérard,
Willem L. Vos
Abstract:
We have studied a GaAs-AlAs planar microcavity with a resonance near 1300 nm in the telecom range by ultrafast pump-probe reflectivity. By the judicious choice of pump frequency, we observe a ultimate fast and reversible decrease of the resonance frequency by more than half a linewidth due to the instantaneous electronic Kerr effect. The switch-on and switch-off? of the cavity is only limited by t…
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We have studied a GaAs-AlAs planar microcavity with a resonance near 1300 nm in the telecom range by ultrafast pump-probe reflectivity. By the judicious choice of pump frequency, we observe a ultimate fast and reversible decrease of the resonance frequency by more than half a linewidth due to the instantaneous electronic Kerr effect. The switch-on and switch-off? of the cavity is only limited by the cavity storage time of ?tcav = 0.3ps and not by intrinsic material parameters. Our results pave the way to supra-THz switching rates for on-chip data modulation and real-time cavity quantum electrodynamics.
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Submitted 30 March, 2011; v1 submitted 16 February, 2011;
originally announced February 2011.
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Optical characterization and selective addressing of the resonant modes of a micropillar cavity with a white light beam
Authors:
Georgios Ctistis,
Alex Hartsuiker,
Edwin van der Pol,
Julien Claudon,
Willem L. Vos,
Jean-Michel Gérard
Abstract:
We have performed white-light reflectivity measurements on GaAs/AlAs micropillar cavities with diameters ranging from 1 μm up to 20 μm. We are able to resolve the spatial field distribution of each cavity mode in real space by scanning a small-sized beam across the top facet of each micropillar. We spectrally resolve distinct transverse optical cavity modes in reflectivity. Using this procedure we…
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We have performed white-light reflectivity measurements on GaAs/AlAs micropillar cavities with diameters ranging from 1 μm up to 20 μm. We are able to resolve the spatial field distribution of each cavity mode in real space by scanning a small-sized beam across the top facet of each micropillar. We spectrally resolve distinct transverse optical cavity modes in reflectivity. Using this procedure we can selectively address a single mode in the multimode micropillar cavity. Calculations for the coupling efficiency of a small-diameter beam to each mode are in very good agreement with our reflectivity measurements.
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Submitted 10 November, 2010; v1 submitted 2 July, 2010;
originally announced July 2010.