Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor
Authors:
Zhongyuan Lu,
Claudy Serrao,
Asif I. Khan,
James D. Clarkson,
Justin C. Wong,
Ramamoorthy Ramesh,
Sayeef Salahuddin
Abstract:
We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS$_2$ transistor. A single crystalline, epitaxially grown, PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT) was placed in the gate of a field effect transistor made of thin film MoS$_2$. When a gate voltage is applied to this ferroelectric gated transistor, a clear transition from insulator to metal and vice versa is ob…
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We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS$_2$ transistor. A single crystalline, epitaxially grown, PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT) was placed in the gate of a field effect transistor made of thin film MoS$_2$. When a gate voltage is applied to this ferroelectric gated transistor, a clear transition from insulator to metal and vice versa is observed. Importantly, when the gate voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS$_2$ in its original phase, thereby providing a non-volatile state. Thus a metallic or insulating phase can be written, erased or retained simply by applying a gate voltage to the transistor.
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Submitted 24 July, 2017; v1 submitted 17 May, 2017;
originally announced May 2017.
