The scaling of the microLED and the advantage of 2D materials
Authors:
Xuejun Xie,
Hamid T. Chorsi,
Kunjesh Agashiwala,
Hsun-Ming Chang,
Jiahao Kang,
Jae Hwan Chu,
Ibrahim Sarpkaya,
Han Htoon,
Jon A. Schuller,
Kaustav Banerjee
Abstract:
The demand for higher resolution displays drives the demand for smaller pixels. Displays show a trend of doubling the pixel number every 4 years and doubling the pixel per inch (PPI) every 6 years. As the prospective candidate for next-generation display technology, microLED (micro Light Emitting Diode) will suffer from sidewall current leakage and poor extraction efficiency as its lateral size re…
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The demand for higher resolution displays drives the demand for smaller pixels. Displays show a trend of doubling the pixel number every 4 years and doubling the pixel per inch (PPI) every 6 years. As the prospective candidate for next-generation display technology, microLED (micro Light Emitting Diode) will suffer from sidewall current leakage and poor extraction efficiency as its lateral size reduces. Using Finite Element Analysis (FEA) method and Finite-Difference Time-Domain (FDTD) method, we find that reducing the thickness of the LED can reduce the current leaking to the sidewalls and reduce the total internal reflection simultaneously. A promising solution to this problem is by using atomically thin 2D materials to make LEDs. However, monolayer inorganic 2D materials that can provide red, green and blue emission are still lacking. Based on the blue light-emitting material fluorographene (CF), partially fluorinated graphene (CFx) is synthesized in this work to emit red and green colors from 683 nm to 555 nm (limited by the instrument). This work also demonstrates lithographically defined regions with different colors, paving the way for the scaling of microLED.
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Submitted 18 January, 2021;
originally announced January 2021.
Manipulation of the large Rashba spin splitting in polar two-dimensional transition metal dichalcogenides
Authors:
Qun-Fang Yao,
Jia Cai,
Wen-Yi Tong,
Shi-**g Gong,
Ji-Qing Wang,
Xian-gang Wan,
Chun-Gang Duan,
J. H. Chu
Abstract:
Transition metal dichalcogenide (TMD) monolayers MXY (M=Mo, W, X(not equal to)Y=S, Se, Te) are two-dimensional polar semiconductors. Setting WSeTe monolayer as an example and using density functional theory calculations, we investigate the manipulation of Rashba spin orbit coupling (SOC) in the MXY monolayer. It is found that the intrinsic out-of-plane electric field due to the mirror symmetry bre…
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Transition metal dichalcogenide (TMD) monolayers MXY (M=Mo, W, X(not equal to)Y=S, Se, Te) are two-dimensional polar semiconductors. Setting WSeTe monolayer as an example and using density functional theory calculations, we investigate the manipulation of Rashba spin orbit coupling (SOC) in the MXY monolayer. It is found that the intrinsic out-of-plane electric field due to the mirror symmetry breaking induces the large Rashba spin splitting around the Gamma point, which, however, can be easily tuned by applying the in-plane biaxial strain. Through a relatively small strain (from -2% to 2%), a large tunability (from around -50% to 50%) of Rashba SOC can be obtained due to the modified orbital overlap, which can in turn modulate the intrinsic electric field. The orbital selective external potential method further confirms the significance of the orbital overlap between W-dz2 and Se-pz in Rashba SOC. In addition, we also explore the influence of the external electric field on Rashba SOC in the WSeTe monolayer, which is less effective than strain. The large Rashba spin splitting, together with the valley spin splitting in MXY monolayers may make a special contribution to semiconductor spintronics and valleytronics.
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Submitted 19 February, 2017; v1 submitted 25 June, 2016;
originally announced June 2016.
