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A scalable cavity-based spin-photon interface in a photonic integrated circuit
Authors:
Kevin C. Chen,
Ian Christen,
Hamza Raniwala,
Marco Colangelo,
Lorenzo De Santis,
Katia Shtyrkova,
David Starling,
Ryan Murphy,
Linsen Li,
Karl Berggren,
P. Benjamin Dixon,
Matthew Trusheim,
Dirk Englund
Abstract:
A central challenge in quantum networking is transferring quantum states between different physical modalities, such as between flying photonic qubits and stationary quantum memories. One implementation entails using spin-photon interfaces that combine solid-state spin qubits, such as color centers in diamond, with photonic nanostructures. However, while high-fidelity spin-photon interactions have…
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A central challenge in quantum networking is transferring quantum states between different physical modalities, such as between flying photonic qubits and stationary quantum memories. One implementation entails using spin-photon interfaces that combine solid-state spin qubits, such as color centers in diamond, with photonic nanostructures. However, while high-fidelity spin-photon interactions have been demonstrated on isolated devices, building practical quantum repeaters requires scaling to large numbers of interfaces yet to be realized. Here, we demonstrate integration of nanophotonic cavities containing tin-vacancy (SnV) centers in a photonic integrated circuit (PIC). Out of a six-channel quantum micro-chiplet (QMC), we find four coupled SnV-cavity devices with an average Purcell factor of ~7. Based on system analyses and numerical simulations, we find with near-term improvements this multiplexed architecture can enable high-fidelity quantum state transfer, paving the way towards building large-scale quantum repeaters.
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Submitted 28 February, 2024;
originally announced February 2024.
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LNoS: Lithium Niobate on Silicon Spatial Light Modulator
Authors:
Sivan Trajtenberg-Mills,
Mohamed ElKabbash,
Cole J. Brabec,
Christopher L. Panuski,
Ian Christen,
Dirk Englund
Abstract:
Programmable spatiotemporal control of light is crucial for advancements in optical communications, imaging, and quantum technologies. Commercial spatial light modulators (SLMs) typically have megapixel-scale apertures but are limited to ~kHz operational speeds. Develo** a device that controls a similar number of spatial modes at high speeds could potentially transform fields such as imaging thr…
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Programmable spatiotemporal control of light is crucial for advancements in optical communications, imaging, and quantum technologies. Commercial spatial light modulators (SLMs) typically have megapixel-scale apertures but are limited to ~kHz operational speeds. Develo** a device that controls a similar number of spatial modes at high speeds could potentially transform fields such as imaging through scattering media, quantum computing with cold atoms and ions, and high-speed machine vision, but to date remains an open challenge. In this work we introduce and demonstrate a free-form, resonant electro-optic (EO) modulator with megapixel apertures using CMOS integration. The optical layer features a Lithium Niobate (LN) thin-film integrated with a photonic crystal (PhC), yielding a guided mode resonance (GMR) with a Q-factor>1000, a field overlap coefficient ~90% and a 1.6 GHz 3-dB modulation bandwidth (detector limited). To realize a free-form and scalable SLM, we fabricate the PhC via interference lithography and develop a procedure to bond the device to a megapixel CMOS backplane. We identify limitations in existing EO materials and CMOS backplanes that must be overcome to simultaneously achieve megapixel-scale, GHz-rate operation. The `LN on Silicon' (LNoS) architecture we present is a blueprint towards realizing such devices.
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Submitted 22 February, 2024;
originally announced February 2024.
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Photonic crystal cavity IQ modulators in thin-film lithium niobate for coherent communications
Authors:
Hugo Larocque,
Dashiell L. P. Vitullo,
Alexander Sludds,
Hamed Sattari,
Ian Christen,
Gregory Choong,
Ivan Prieto,
Jacopo Leo,
Homa Zarebidaki,
Sanjaya Lohani,
Brian T. Kirby,
Öney O. Soykal,
Moe Soltani,
Amir H. Ghadimi,
Dirk Englund,
Mikkel Heuck
Abstract:
Thin-Film Lithium Niobate (TFLN) is an emerging integrated photonic platform showing great promise due to its large second-order nonlinearity at microwave and optical frequencies, cryogenic compatibility, large piezoelectric response, and low optical loss at visible and near-infrared wavelengths. These properties enabled Mach-Zehnder interferometer-based devices to demonstrate amplitude- and in-ph…
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Thin-Film Lithium Niobate (TFLN) is an emerging integrated photonic platform showing great promise due to its large second-order nonlinearity at microwave and optical frequencies, cryogenic compatibility, large piezoelectric response, and low optical loss at visible and near-infrared wavelengths. These properties enabled Mach-Zehnder interferometer-based devices to demonstrate amplitude- and in-phase/quadrature (IQ) modulation at voltage levels compatible with complementary metal-oxide-semiconductor (CMOS) electronics. Maintaining low-voltage operation requires centimeter-scale device lengths, making it challenging to realize the large-scale circuits required by ever-increasing bandwidth demands in data communications. Reduced device sizes reaching the 10 um scale are possible with photonic crystal (PhC) cavities. So far, their operation has been limited to modulation of amplitudes and required circulators or lacked cascadability. Here, we demonstrate a compact IQ modulator using two PhC cavities operating as phase shifters in a Fabry-Perot-enhanced Michelson interferometer configuration. It supports cascadable amplitude and phase modulation at GHz bandwidths with CMOS-compatible voltages. While the bandwidth limitation of resonant devices is often considered detrimental, their compactness enables dense co-integration with CMOS electronics where clock-rate-level operation (few GHz) removes power-hungry electrical time-multiplexing. Recent demonstrations of chip-scale transceivers with dense-wavelength division multiplied transceivers could be monolithically implemented and driven toward ultimate information densities using TFLN electro-optic frequency combs and our PhC IQ modulators.
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Submitted 27 December, 2023;
originally announced December 2023.
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Heterogeneous integration of spin-photon interfaces with a scalable CMOS platform
Authors:
Linsen Li,
Lorenzo De Santis,
Isaac Harris,
Kevin C. Chen,
Yihuai Gao,
Ian Christen,
Matthew Trusheim,
Hyeongrak Choi,
Yixuan Song,
Carlos Errando-Herranz,
Jiahui Du,
Yong Hu,
Genevieve Clark,
Mohamed I. Ibrahim,
Gerald Gilbert,
Ruonan Han,
Dirk Englund
Abstract:
Color centers in diamonds have emerged as a leading solid-state platform for advancing quantum technologies, satisfying the DiVincenzo criteria and recently achieving a quantum advantage in secret key distribution. Recent theoretical works estimate that general-purpose quantum computing using local quantum communication networks will require millions of physical qubits to encode thousands of logic…
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Color centers in diamonds have emerged as a leading solid-state platform for advancing quantum technologies, satisfying the DiVincenzo criteria and recently achieving a quantum advantage in secret key distribution. Recent theoretical works estimate that general-purpose quantum computing using local quantum communication networks will require millions of physical qubits to encode thousands of logical qubits, which presents a substantial challenge to the hardware architecture at this scale. To address the unanswered scaling problem, in this work, we first introduce a scalable hardware modular architecture "Quantum System-on-Chip" (QSoC) that features compact two-dimensional arrays "quantum microchiplets" (QMCs) containing tin-vacancy (SnV-) spin qubits integrated on a cryogenic application-specific integrated circuit (ASIC). We demonstrate crucial architectural subcomponents, including (1) QSoC fabrication via a lock-and-release method for large-scale heterogeneous integration; (2) a high-throughput calibration of the QSoC for spin qubit spectral inhomogenous registration; (3) spin qubit spectral tuning functionality for inhomogenous compensation; (4) efficient spin-state preparation and measurement for improved spin and optical properties. QSoC architecture supports full connectivity for quantum memory arrays in a set of different resonant frequencies and offers the possibility for further scaling the number of solid-state physical qubits via larger and denser QMC arrays and optical frequency multiplexing networking.
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Submitted 20 December, 2023; v1 submitted 28 August, 2023;
originally announced August 2023.
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Cavity-enhanced single artificial atoms in silicon
Authors:
Valeria Saggio,
Carlos Errando-Herranz,
Samuel Gyger,
Christopher Panuski,
Mihika Prabhu,
Lorenzo De Santis,
Ian Christen,
Dalia Ornelas-Huerta,
Hamza Raniwala,
Connor Gerlach,
Marco Colangelo,
Dirk Englund
Abstract:
Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile and robust photonic qubits. The central requirements for the spin-photon interface at the heart of these systems are long spin coherence times and efficient spin-photon coupling at telecommunication wavelengths. Artificial atoms in silicon ha…
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Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile and robust photonic qubits. The central requirements for the spin-photon interface at the heart of these systems are long spin coherence times and efficient spin-photon coupling at telecommunication wavelengths. Artificial atoms in silicon have a unique potential to combine the long coherence times of spins in silicon with telecommunication wavelength photons in the world's most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of artificial atoms. An open challenge is to enhance this interaction via coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms at telecommunication wavelengths in silicon. We optimize photonic crystal cavities via inverse design and show controllable cavity-coupling of single G-centers in the telecommunications O-band. Our results illustrate the potential to achieve a deterministic spin-photon interface in silicon at telecommunication wavelengths, paving the way for scalable quantum information processing.
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Submitted 20 February, 2023;
originally announced February 2023.
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Large-scale optical characterization of solid-state quantum emitters
Authors:
Madison Sutula,
Ian Christen,
Eric Bersin,
Michael P. Walsh,
Kevin C. Chen,
Justin Mallek,
Alexander Melville,
Michael Titze,
Edward S. Bielejec,
Scott Hamilton,
Danielle Braje,
P. Benjamin Dixon,
Dirk R. Englund
Abstract:
Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. In this work, we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of color centers. We first demonstrate the ability to track color center…
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Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. In this work, we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of color centers. We first demonstrate the ability to track color centers by registering them to a fabricated machine-readable global coordinate system, enabling systematic comparison of the same color center sites over many experiments. We then implement resonant photoluminescence excitation in a widefield cryogenic microscope to parallelize resonant spectroscopy, achieving two orders of magnitude speed-up over confocal microscopy. Finally, we demonstrate automated chip-scale characterization of color centers and devices at room temperature, imaging thousands of microscope fields of view. These tools will enable accelerated identification of useful quantum emitters at chip-scale, enabling advances in scaling up color center platforms for quantum information applications, materials science, and device design and characterization.
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Submitted 24 October, 2022;
originally announced October 2022.
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Scalable photonic integrated circuits for programmable control of atomic systems
Authors:
Adrian J Menssen,
Artur Hermans,
Ian Christen,
Thomas Propson,
Chao Li,
Andrew J Leenheer,
Matthew Zimmermann,
Mark Dong,
Hugo Larocque,
Hamza Raniwala,
Gerald Gilbert,
Matt Eichenfield,
Dirk R Englund
Abstract:
Advances in laser technology have driven discoveries in atomic, molecular, and optical (AMO) physics and emerging applications, from quantum computers with cold atoms or ions, to quantum networks with solid-state color centers. This progress is motivating the development of a new generation of "programmable optical control" systems, characterized by criteria (C1) visible (VIS) and near-infrared (I…
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Advances in laser technology have driven discoveries in atomic, molecular, and optical (AMO) physics and emerging applications, from quantum computers with cold atoms or ions, to quantum networks with solid-state color centers. This progress is motivating the development of a new generation of "programmable optical control" systems, characterized by criteria (C1) visible (VIS) and near-infrared (IR) wavelength operation, (C2) large channel counts extensible beyond 1000s of individually addressable atoms, (C3) high intensity modulation extinction and (C4) repeatability compatible with low gate errors, and (C5) fast switching times. Here, we address these challenges by introducing an atom control architecture based on VIS-IR photonic integrated circuit (PIC) technology. Based on a complementary metal-oxide-semiconductor (CMOS) fabrication process, this Atom-control PIC (APIC) technology meets the system requirements (C1)-(C5). As a proof of concept, we demonstrate a 16-channel silicon nitride based APIC with (5.8$\pm$0.4) ns response times and -30 dB extinction ratio at a wavelength of 780 nm. This work demonstrates the suitability of PIC technology for quantum control, opening a path towards scalable quantum information processing based on optically-programmable atomic systems.
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Submitted 7 October, 2022; v1 submitted 6 October, 2022;
originally announced October 2022.
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An integrated photonic engine for programmable atomic control
Authors:
Ian Christen,
Madison Sutula,
Thomas Propson,
Hamed Sattari,
Gregory Choong,
Christopher Panuski,
Alexander Melville,
Justin Mallek,
Scott Hamilton,
P. Benjamin Dixon,
Adrian J. Menssen,
Danielle Braje,
Amir H. Ghadimi,
Dirk Englund
Abstract:
Solutions for scalable, high-performance optical control are important for the development of scaled atom-based quantum technologies. Modulation of many individual optical beams is central to the application of arbitrary gate and control sequences on arrays of atoms or atom-like systems. At telecom wavelengths, miniaturization of optical components via photonic integration has pushed the scale and…
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Solutions for scalable, high-performance optical control are important for the development of scaled atom-based quantum technologies. Modulation of many individual optical beams is central to the application of arbitrary gate and control sequences on arrays of atoms or atom-like systems. At telecom wavelengths, miniaturization of optical components via photonic integration has pushed the scale and performance of classical and quantum optics far beyond the limitations of bulk devices. However, these material platforms for high-speed telecom integrated photonics are not transparent at the short wavelengths required by leading atomic systems. Here, we propose and implement a scalable and reconfigurable photonic architecture for multi-channel quantum control using integrated, visible-light modulators based on thin-film lithium niobate. Our approach combines techniques in free-space optics, holography, and control theory together with a sixteen-channel integrated photonic device to stabilize temporal and cross-channel power deviations and enable precise and uniform control. Applying this device to a homogeneous constellation of silicon-vacancy artificial atoms in diamond, we present techniques to spatially and spectrally address a dynamically-selectable set of these stochastically-positioned point emitters. We anticipate that this scalable and reconfigurable optical architecture will lead to systems that could enable parallel individual programmability of large many-body atomic systems, which is a critical step towards universal quantum computation on such hardware.
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Submitted 13 August, 2022;
originally announced August 2022.
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Deep Learning with Coherent VCSEL Neural Networks
Authors:
Zaijun Chen,
Alexander Sludds,
Ronald Davis,
Ian Christen,
Liane Bernstein,
Tobias Heuser,
Niels Heermeier,
James A. Lott,
Stephan Reitzenstein,
Ryan Hamerly,
Dirk Englund
Abstract:
Deep neural networks (DNNs) are resha** the field of information processing. With their exponential growth challenging existing electronic hardware, optical neural networks (ONNs) are emerging to process DNN tasks in the optical domain with high clock rates, parallelism and low-loss data transmission. However, to explore the potential of ONNs, it is necessary to investigate the full-system perfo…
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Deep neural networks (DNNs) are resha** the field of information processing. With their exponential growth challenging existing electronic hardware, optical neural networks (ONNs) are emerging to process DNN tasks in the optical domain with high clock rates, parallelism and low-loss data transmission. However, to explore the potential of ONNs, it is necessary to investigate the full-system performance incorporating the major DNN elements, including matrix algebra and nonlinear activation. Existing challenges to ONNs are high energy consumption due to low electro-optic (EO) conversion efficiency, low compute density due to large device footprint and channel crosstalk, and long latency due to the lack of inline nonlinearity. Here we experimentally demonstrate an ONN system that simultaneously overcomes all these challenges. We exploit neuron encoding with volume-manufactured micron-scale vertical-cavity surface-emitting laser (VCSEL) transmitter arrays that exhibit high EO conversion (<5 attojoule/symbol with $V_π$=4 mV), high operation bandwidth (up to 25 GS/s), and compact footprint (<0.01 mm$^2$ per device). Photoelectric multiplication allows low-energy matrix operations at the shot-noise quantum limit. Homodyne detection-based nonlinearity enables nonlinear activation with instantaneous response. The full-system energy efficiency and compute density reach 7 femtojoules per operation (fJ/OP) and 25 TeraOP/(mm$^2\cdot$ s), both representing a >100-fold improvement over state-of-the-art digital computers, with substantially several more orders of magnitude for future improvement. Beyond neural network inference, its feature of rapid weight updating is crucial for training deep learning models. Our technique opens an avenue to large-scale optoelectronic processors to accelerate machine learning tasks from data centers to decentralized edge devices.
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Submitted 12 July, 2022;
originally announced July 2022.
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A full degree-of-freedom photonic crystal spatial light modulator
Authors:
Christopher L. Panuski,
Ian R. Christen,
Momchil Minkov,
Cole J. Brabec,
Sivan Trajtenberg-Mills,
Alexander D. Griffiths,
Jonathan J. D. McKendry,
Gerald L. Leake,
Daniel J. Coleman,
Cung Tran,
Jeffrey St Louis,
John Mucci,
Cameron Horvath,
Jocelyn N. Westwood-Bachman,
Stefan F. Preble,
Martin D. Dawson,
Michael J. Strain,
Michael L. Fanto,
Dirk R. Englund
Abstract:
Harnessing the full complexity of optical fields requires complete control of all degrees-of-freedom within a region of space and time -- an open goal for present-day spatial light modulators (SLMs), active metasurfaces, and optical phased arrays. Here, we solve this challenge with a programmable photonic crystal cavity array enabled by four key advances: (i) near-unity vertical coupling to high-f…
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Harnessing the full complexity of optical fields requires complete control of all degrees-of-freedom within a region of space and time -- an open goal for present-day spatial light modulators (SLMs), active metasurfaces, and optical phased arrays. Here, we solve this challenge with a programmable photonic crystal cavity array enabled by four key advances: (i) near-unity vertical coupling to high-finesse microcavities through inverse design, (ii) scalable fabrication by optimized, 300 mm full-wafer processing, (iii) picometer-precision resonance alignment using automated, closed-loop "holographic trimming", and (iv) out-of-plane cavity control via a high-speed micro-LED array. Combining each, we demonstrate near-complete spatiotemporal control of a 64-resonator, two-dimensional SLM with nanosecond- and femtojoule-order switching. Simultaneously operating wavelength-scale modes near the space- and time-bandwidth limits, this work opens a new regime of programmability at the fundamental limits of multimode optical control.
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Submitted 21 April, 2022;
originally announced April 2022.
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Individually Addressable and Spectrally Programmable Artificial Atoms in Silicon Photonics
Authors:
Mihika Prabhu,
Carlos Errando-Herranz,
Lorenzo De Santis,
Ian Christen,
Changchen Chen,
Connor Gerlach,
Dirk R. Englund
Abstract:
Artificial atoms in solids have emerged as leading systems for quantum information processing tasks such as quantum networking, sensing, and computing. A central goal is to develop platforms for precise and scalable control of individually addressable artificial atoms that feature efficient optical interfaces. Color centers in silicon, such as the recently-isolated carbon-related 'G-center', exhib…
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Artificial atoms in solids have emerged as leading systems for quantum information processing tasks such as quantum networking, sensing, and computing. A central goal is to develop platforms for precise and scalable control of individually addressable artificial atoms that feature efficient optical interfaces. Color centers in silicon, such as the recently-isolated carbon-related 'G-center', exhibit emission directly into the telecommunications O-band and can leverage the maturity of silicon-on-insulator (SOI) photonics. Here, we demonstrate the generation, individual addressing, and spectral trimming of G-center artificial atoms in a SOI photonic integrated circuit (PIC) platform. Focusing on the neutral charge state emission at 1278nm, we observe waveguide-coupled single photon emission with an exceptionally narrow inhomogeneous distribution with standard deviation of 1.1nm, an excited state lifetime of 8.3$\pm$0.7ns, and no degradation after months of operation. In addition, we introduce a technique for optical trimming of spectral transitions up to 300 pm (55 GHz) and local deactivation of single artificial atoms. This non-volatile "spectral programming" enables the alignment of quantum emitters into 25 GHz telecommunication grid channels. Our demonstration opens the path to quantum information processing based on implantable artificial atoms in very large scale integrated (VLSI) photonics.
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Submitted 29 January, 2023; v1 submitted 4 February, 2022;
originally announced February 2022.
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Frequency control of single quantum emitters in integrated photonic circuits
Authors:
Emma R. Schmidgall,
Srivatsa Chakravarthi,
Michael Gould,
Ian R. Christen,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect…
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Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.
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Submitted 23 February, 2018;
originally announced February 2018.
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A Large-Scale GaP-on-Diamond Integrated Photonics Platform for NV Center-Based Quantum Information
Authors:
Michael Gould,
Srivatsa Chakravarthi,
Ian R. Christen,
Nicole Thomas,
Shabnam Dadgostar,
Yuncheng Song,
Minjoo Larry Lee,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place th…
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We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.
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Submitted 16 October, 2015;
originally announced October 2015.
