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Electrically Reconfigurable Nonvolatile Metasurface Using Low-Loss Optical Phase Change Material
Authors:
Yifei Zhang,
Clayton Fowler,
Junhao Liang,
Bilal Azhar,
Mikhail Y. Shalaginov,
Skylar Deckoff-Jones,
Sensong An,
Jeffrey B. Chou,
Christopher M. Roberts,
Vladimir Liberman,
Myungkoo Kang,
Carlos Ríos,
Kathleen A. Richardson,
Clara Rivero-Baleine,
Tian Gu,
Hualiang Zhang,
Juejun Hu
Abstract:
Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an appealing material solution for active metasurface devices with their large index contrast and nonvolatile switching characteristics. Here we report what we believe…
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Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an appealing material solution for active metasurface devices with their large index contrast and nonvolatile switching characteristics. Here we report what we believe to be the first electrically reconfigurable nonvolatile metasurfaces based on O-PCMs. The O-PCM alloy used in the devices, Ge2Sb2Se4Te1 (GSST), uniquely combines giant non-volatile index modulation capability, broadband low optical loss, and a large reversible switching volume, enabling significantly enhanced light-matter interactions within the active O-PCM medium. Capitalizing on these favorable attributes, we demonstrated continuously tunable active metasurfaces with record half-octave spectral tuning range and large optical contrast of over 400%. We further prototyped a polarization-insensitive phase-gradient metasurface to realize dynamic optical beam steering.
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Submitted 2 September, 2020; v1 submitted 15 August, 2020;
originally announced August 2020.
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Multi-level Electro-thermal Switching of Optical Phase-Change Materials Using Graphene
Authors:
Carlos Ríos,
Yifei Zhang,
Mikhail Shalaginov,
Skylar Deckoff-Jones,
Haozhe Wang,
Sensong An,
Hualiang Zhang,
Myungkoo Kang,
Kathleen A. Richardson,
Christopher Roberts,
Jeffrey B. Chou,
Vladimir Liberman,
Steven A. Vitale,
**g Kong,
Tian Gu,
Juejun Hu
Abstract:
Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcoming these issues are the development of nonvolatile optical reconfigurat…
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Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcoming these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on-chip integration with different photonic platforms and do not disrupt their optical performances. In this paper, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that employs undoped-graphene microheaters to thermally and reversibly switch the optical phase-change material Ge$_2$Sb$_2$Se$_4$Te$_1$ (GSST). An in-situ Raman spectroscopy method is utilized to demonstrate, in real-time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si$_3$N$_4$ integrated photonic circuits with small form-factor modulators and reconfigurable metasurfaces displaying 2$π$ phase coverage through neural-network-designed GSST meta-atoms. This framework will enable scalable, low-loss nonvolatile applications across a diverse range of photonics platforms.
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Submitted 15 July, 2020;
originally announced July 2020.
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Reconfigurable all-dielectric metalens with diffraction limited performance
Authors:
Mikhail Y. Shalaginov,
Sensong An,
Yifei Zhang,
Fan Yang,
Peter Su,
Vladimir Liberman,
Jeffrey B. Chou,
Christopher M. Roberts,
Myungkoo Kang,
Carlos Rios,
Qingyang Du,
Clayton Fowler,
Anuradha Agarwal,
Kathleen Richardson,
Clara Rivero-Baleine,
Hualiang Zhang,
Juejun Hu,
Tian Gu
Abstract:
Active metasurfaces, whose optical properties can be modulated post-fabrication, have emerged as an intensively explored field in recent years. The efforts to date, however, still face major performance limitations in tuning range, optical quality, and efficiency especially for non mechanical actuation mechanisms. In this paper, we introduce an active metasurface platform combining phase tuning co…
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Active metasurfaces, whose optical properties can be modulated post-fabrication, have emerged as an intensively explored field in recent years. The efforts to date, however, still face major performance limitations in tuning range, optical quality, and efficiency especially for non mechanical actuation mechanisms. In this paper, we introduce an active metasurface platform combining phase tuning covering the full 2$π$ range and diffraction-limited performance using an all-dielectric, low-loss architecture based on optical phase change materials (O-PCMs). We present a generic design principle enabling switching of metasurfaces between two arbitrary phase profiles and propose a new figure-of-merit (FOM) tailored for active meta-optics. We implement the approach to realize a high-performance varifocal metalens operating at 5.2 $μ$m wavelength. The metalens is constructed using Ge2Sb2Se4Te1 (GSST), an O-PCM with a large refractive index contrast ($Δ$ n > 1) and unique broadband low-loss characteristics in both amorphous and crystalline states. The reconfigurable metalens features focusing efficiencies above 20% at both states for linearly polarized light and a record large switching contrast ratio of 29.5 dB. We further validated aberration-free imaging using the metalens at both optical states, which represents the first experimental demonstration of a non-mechanical active metalens with diffraction-limited performance.
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Submitted 10 December, 2019; v1 submitted 29 November, 2019;
originally announced November 2019.
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Extreme Broadband Transparent Optical Phase Change Materials for High-Performance Nonvolatile Photonics
Authors:
Yifei Zhang,
Jeffrey B. Chou,
Junying Li,
Huashan Li,
Qingyang Du,
Anupama Yadav,
Si Zhou,
Mikhail Y. Shalaginov,
Zhuoran Fang,
Huikai Zhong,
Christopher Roberts,
Paul Robinson,
Bridget Bohlin,
Carlos Ríos,
Hongtao Lin,
Myungkoo Kang,
Tian Gu,
Jamie Warner,
Vladimir Liberman,
Kathleen Richardson,
Juejun Hu
Abstract:
Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, and optical neuromorphic computers. Current phase change materials, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index…
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Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, and optical neuromorphic computers. Current phase change materials, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index (delta n) and optical loss (delta k), simultaneously. The coupling of both optical properties fundamentally limits the function and performance of many potential applications. In this article, we introduce a new class of O-PCMs, Ge-Sb-Se-Te (GSST) which breaks this traditional coupling, as demonstrated with an optical figure of merit improvement of more than two orders of magnitude. The first-principle computationally optimized alloy, Ge2Sb2Se4Te1, combines broadband low optical loss (1-18.5 micron), large optical contrast (delta n = 2.0), and significantly improved glass forming ability, enabling an entirely new field of infrared and thermal photonic devices. We further leverage the material to demonstrate nonvolatile integrated optical switches with record low loss and large contrast ratio, as well as an electrically addressed, microsecond switched pixel level spatial light modulator, thereby validating its promise as a platform material for scalable nonvolatile photonics.
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Submitted 5 November, 2018; v1 submitted 1 November, 2018;
originally announced November 2018.
