-
Lattice-mismatched semiconductor heterostructures
Authors:
Dong Liu,
Sang June Cho,
Jung-Hun Seo,
Kwangeun Kim,
Munho Kim,
Jian Shi,
Xin Yin,
Wonsik Choi,
Chen Zhang,
Jisoo Kim,
Mohadeseh A. Baboli,
Jeongpil Park,
Jihye Bong,
In-Kyu Lee,
Jiarui Gong,
Solomon Mikael,
Jae Ha Ryu,
Parsian K. Mohseni,
Xiuling Li,
Shaoqin Gong,
Xudong Wang,
Zhenqiang Ma
Abstract:
Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form abrupt heterostructures with large lattice-mismatch while mechanical-thermal bonding results in a high density of interface defects and therefore severe…
▽ More
Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form abrupt heterostructures with large lattice-mismatch while mechanical-thermal bonding results in a high density of interface defects and therefore severely limits device applications. Here we show an ultra-thin oxide-interfaced approach for the successful formation of lattice-mismatched semiconductor heterostructures. Following the depiction of a theory on the role of interface oxide in forming the heterostructures, we describe experimental demonstrations of Ge/Si (diamond lattices), Si/GaAs (zinc blende lattice), GaAs/GaN (hexagon lattice), and Si/GaN heterostructures. Extraordinary electrical performances in terms of ideality factor, current on/off ratio, and reverse breakdown voltage are measured from p-n diodes fabricated from the four types of heterostructures, significantly outperforming diodes derived from other methods. Our demonstrations indicate the versatility of the ultra-thin-oxide-interface approach in forming lattice-mismatched heterostructures, open up a much larger possibility for material combinations for heterostructures, and pave the way toward broader applications in electronic and optoelectronic realms.
△ Less
Submitted 25 December, 2018;
originally announced December 2018.
-
229 nm UV LEDs using p-type silicon for increased hole injection
Authors:
Dong Liu,
Sang June Cho,
Jeongpil Park,
Jung-Hun Seo,
Rafael Dalmau,
Deyin Zhao,
Kwangeun Kim,
Munho Kim,
In-Kyu Lee,
John D. Albrecht,
Weidong Zhou,
Baxter Moody,
Zhenqiang Ma
Abstract:
Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was reported. Both electrical and optical characteristics were measured. Owing to the large concentration of holes from p-Si and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2…
▽ More
Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was reported. Both electrical and optical characteristics were measured. Owing to the large concentration of holes from p-Si and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 uW was obtained with corresponding external quantum efficiency of 0.027%. This study demonstrates that by adopting p-type Si nanomembrane contacts as hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.
△ Less
Submitted 13 August, 2017;
originally announced August 2017.
-
UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection
Authors:
Sang June Cho,
Dong Liu,
Jung-Hun Seo,
Rafael Dalmau,
Kwangeun Kim,
Jeongpil Park,
Deyin Zhao,
Xin Yin,
Yei Hwan Jung,
In-Kyu Lee,
Munho Kim,
Xudong Wang,
John D. Albrecht,
Weidong Zhou Baxter Moody,
Zhenqiang Ma
Abstract:
As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient hole injection from p-type AlGaN severely limit the LED performance and development. In this work, we report on 237 nm light emission with a record light output power of 265 uW from AlN/Al0.72Ga028N multiple quantum well U…
▽ More
As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient hole injection from p-type AlGaN severely limit the LED performance and development. In this work, we report on 237 nm light emission with a record light output power of 265 uW from AlN/Al0.72Ga028N multiple quantum well UVC LEDs using bulk AlN substrates and p-type silicon nanomembrane contact layers for significantly improved AlGaN film quality and hole injection, respectively. No intensity degradation or efficiency droop was observed up to a current density of 245 A/cm2, which is attributed to the low dislocation density within AlGaN films, the large concentration of holes from p-Si, and efficient hole-transport to the active region. Additionally, the emission peak at 237 nm is dominant across the electroluminescence spectrum with no significant parasitic emissions observed. This study demonstrates the feasibility of using p-Si as a hole injector for UVC LEDs, which can be extended to even shorter wavelengths where hole injection from chemically doped AlGaN layers is not feasible.
△ Less
Submitted 13 July, 2017;
originally announced July 2017.
-
Treatment plan comparison of Linac step and shoot,Tomotherapy, RapidArc, and Proton therapy for prostate cancer using dosimetrical and biological index
Authors:
Suk Lee,
Yuan Jie Cao,
Kyung Hwan Chang,
Jang Bo Shim,
Kwang Hyeon Kim,
Nam Kwon Lee,
Young Je Park,
Chul Yong Kim,
Sam Ju Cho,
Sang Hoon Lee,
Chul Kee Min,
Woo Chul Kim,
Kwang Hwan Cho,
Hyun Do Huh,
Sangwook Lim,
Dongho Shin
Abstract:
The purpose of this study was to use various dosimetrical indices to determine the best IMRT modality technique for treating patients with prostate cancer. Ten patients with prostate cancer were included in this study. Intensity modulated radiation therapy plans were designed to include different modalities, including the linac step and shoot, Tomotherapy, RapidArc, and Proton systems. Various dos…
▽ More
The purpose of this study was to use various dosimetrical indices to determine the best IMRT modality technique for treating patients with prostate cancer. Ten patients with prostate cancer were included in this study. Intensity modulated radiation therapy plans were designed to include different modalities, including the linac step and shoot, Tomotherapy, RapidArc, and Proton systems. Various dosimetrical indices, like the prescription isodose to target volume (PITV) ratio, conformity index (CI), homogeneity index (HI), target coverage index (TCI), modified dose homogeneity index (MHI), conformation number (CN), critical organ scoring index (COSI), and quality factor (QF) were determined to compare the different treatment plans. Biological indices such as the generalized equivalent uniform dose (gEUD), based tumor control probability (TCP), and normal tissue complication probability (NTCP) were also calculated and used to compare the treatment plans. The RapidArc plan attained better PTV coverage, as evidenced by its superior PITV, CI, TCI, MHI, and CN values. Regarding OARs, proton therapy exhibited superior dose sparing for the rectum and bowel in low dose volumes, whereas the Tomotherapy and RapidArc plans achieved better dose sparing in high dose volumes. The QF scores showed no significant difference among these plans (p=0.701). The average TCPs for prostate tumors in the RapidArc, Linac, and Proton plans were higher than the average TCP for Tomotherapy (98.79%, 98.76%, and 98.75% vs. 98.70%, respectively). Regarding the rectum NTCP, RapidArc showed the most favorable result (0.09%), whereas Linac resulted in the best bladder NTCP (0.08%).
△ Less
Submitted 11 March, 2015;
originally announced March 2015.
