Rotating-modulated Higher-Order Topological States in a Split-ring Photonic Insulator
Authors:
Hui Chang Li,
Xiang Zhou,
Hai Lin Chi,
Wen Wen Wang,
Yun Shen,
Xiao Hua Deng
Abstract:
The emerging field of topology has brought device effects to a new level. Higher-order topological insulators (HOTIs) go beyond traditional descriptions of bulk-edge correspondence, broadening the understanding of topologically insulating phases. In this paper, a second-order split-ring photonic crystal (SSPC) with zero-dimensional (0D) corner states and one-dimensional (1D) edge states is propose…
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The emerging field of topology has brought device effects to a new level. Higher-order topological insulators (HOTIs) go beyond traditional descriptions of bulk-edge correspondence, broadening the understanding of topologically insulating phases. In this paper, a second-order split-ring photonic crystal (SSPC) with zero-dimensional (0D) corner states and one-dimensional (1D) edge states is proposed. Based on the coupling strength determined by the opening direction between the split-rings, the electronic transition strength of the electronic system is imitated, and the topological trivial and non-trivial transformation of the topological two-dimensional (2D) SSH model are realized by using the rotating split-ring lattice. Theory and simulation find that SSPC has non-trivial topological edge states that can be quantified by bulk polarization. As the opening direction of the split-rings gradually changes within one period, there will be transitions between four different topological polarizations of the lowest energy bands, which can be conveniently used to achieve transitions between different topological phases. Our research can be extended to higher dimensions and broaden research paths for higher-order photonic topological insulators and semimetals.
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Submitted 1 April, 2024; v1 submitted 29 March, 2024;
originally announced April 2024.
