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Investigation of Lasing in Highly Strained Germanium at the Crossover to Direct Band Gap
Authors:
Francesco Armand Pilon,
Yann-Michel Niquet,
Jeremie Chretien,
Nicolas Pauc,
Vincent Reboud,
Vincent Calvo,
Julie Widiez,
Jean Michel Hartmann,
Alexei Chelnokov,
Jerome Faist,
Hans Sigg
Abstract:
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeS…
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Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeSn, for example - could be an alternative, provided their performance can be improved. Such progresses will come with better materials but also with the development of a profounder understanding of their optical properties. In this work, we demonstrate, using Ge microbridges with strain up to 6.6%, a powerful method for determining the population inversion gain and the material and optical losses of group IV lasers. This is made by deriving the values for the injection carrier densities and the cavity losses from the measurement of the change of the refractive index and the mode linewidth, respectively. We observe a laser threshold consistent with optical gain and material loss values obtained from a tight binding calculation. Lasing in Ge - at steady-state - is found to be limited to low temperatures in a narrow regime of tensile strain at the crossover to the direct band gap bandstructure. We explain this observation by parasitic intervalence band absorption that increases rapidly with higher injection densities and temperature. N-do** seems to reduce the material loss at low excitation but does not extend the lasing regime. We also discuss the impact of the optically inactive carriers in the L-valley on the linewidth of group IV lasers.
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Submitted 17 June, 2022; v1 submitted 27 January, 2022;
originally announced January 2022.
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Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors
Authors:
Oussama Moutanabbir,
Simone Assali,
Xiao Gong,
Eoin O'Reilly,
Chris Broderick,
Bahareh Marzban,
Jeremy Witzens,
Wei Du,
Shui-Qing Yu,
Alexei Chelnokov,
Dan Buca,
Donguk Nam
Abstract:
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciting developments in (Si)GeSn materials and devices, this family of semiconductors is still facing seriou…
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(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility. Notwithstanding the recent exciting developments in (Si)GeSn materials and devices, this family of semiconductors is still facing serious limitations that need to be addressed to enable reliable and scalable applications. The main outstanding challenges include the difficulty to grow high crystalline quality layers and heterostructures at the desired Sn content and lattice strain, preserve the material integrity during growth and throughout device processing steps, and control do** and defect density. Other challenges are related to the lack of optimized device designs and predictive theoretical models to evaluate and simulate the fundamental properties and performance of (Si)GeSn layers and heterostructures. This Perspective highlights key strategies to circumvent these hurdles and bring this material system to maturity to create far-reaching new opportunities for Si-compatible infrared photodetectors, sensors, and emitters for applications in free-space communication, infrared harvesting, biological and chemical sensing, and thermal imaging.
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Submitted 8 January, 2021;
originally announced January 2021.
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Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Authors:
Anas Elbaz,
Riazul Arefin,
Emilie Sakat,
Binbin Wang,
Etienne Herth,
Gilles Patriarche,
Antonino Foti,
Razvigor Ossikovski,
Sebastien Sauvage,
Xavier Checoury,
Konstantinos Pantzas,
Isabelle Sagnes,
Jérémie Chrétien,
Lara Casiez,
Mathieu Bertrand,
Vincent Calvo,
Nicolas Pauc,
Alexei Chelnokov,
Philippe Boucaud,
Frederic Boeuf,
Vincent Reboud,
Jean-Michel Hartmann,
Moustafa El Kurdi
Abstract:
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless su…
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GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.
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Submitted 21 December, 2020;
originally announced December 2020.
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Lasing in Group-IV materials
Authors:
V. Reboud,
D. Buca,
H. Sigg,
J. M. Hartmann,
Z. Ikonic,
N. Pauc,
V. Calvo,
P. Rodriguez,
A. Chelnokov
Abstract:
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical signal processing, where complex photonic integration is to be combined with large-volume fabrication. However, silicon photonics does not yet cover a l…
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Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical signal processing, where complex photonic integration is to be combined with large-volume fabrication. However, silicon photonics does not yet cover a large portion of applications in the mid-IR. In the 2 to 5 um wavelength range, environmental sensing, life sensing, and security all rely on optical signatures of molecular vibrations to identify complex individual chemical species. The markets for such analysis are huge and constantly growing, with a push for sensitivity, specificity, compactness, low-power operation and low cost. An all-group-IV, CMOS-compatible mid-IR integrated photonic platform would be a key enabler in this wavelength range. As for other wavelengths, such a platform should be complete with low-loss guided interconnects, detectors, modulators, eventually, and most importantly efficient and integrated light sources. This chapter reviews recent developments in the fields of mid-IR silicon-compatible optically and electrically pumped lasers, light emitting diodes and photodetectors based on Ge, GeSn and SiGeSn alloys. It contains insights into the fundamentals of these developments, including band structure modelling, material growth and processing techniques.
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Submitted 18 December, 2020;
originally announced December 2020.
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Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
Authors:
V. Reboud,
A. Gassenq,
N. Pauc,
J. Aubin,
L. Milord,
Q. M. Thai,
M. Bertrand,
K. Guilloy,
D. Rouchon,
J. Rothman,
T. Zabel,
F. Armand Pilon,
H. Sigg,
A. Chelnokov,
J. M. Hartmann,
V. Calvo
Abstract:
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resu…
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Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.
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Submitted 21 April, 2017;
originally announced April 2017.
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Uniaxially stressed germanium with fundamental direct band gap
Authors:
R. Geiger,
T. Zabel,
E. Marin,
A. Gassenq,
J. -M. Hartmann,
J. Widiez,
J. Escalante,
K. Guilloy,
N. Pauc,
D. Rouchon,
G. Osvaldo Diaz,
S. Tardif,
F. Rieutord,
I. Duchemin,
Y. -M. Niquet,
V. Reboud,
V. Calvo,
A. Chelnokov,
J. Faist,
H. Sigg
Abstract:
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a…
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We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.
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Submitted 10 December, 2015;
originally announced March 2016.
