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Femtosecond laser induced creation of G and W-centers in silicon-on-insulator substrates
Authors:
Hugo Quard,
Mario Khoury,
Andong Wang,
Tobias Herzig,
Jan Meijer,
Sebastian Pezzagna,
Sébastien Cueff,
David Grojo,
Marco Abbarchi,
Hai Son Nguyen,
Nicolas Chauvin,
Thomas Wood
Abstract:
The creation of fluorescent defects in silicon is a key step** stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing, of W and G-centers in commercial silicon on insulator (SOI) previously implanted with 12C+ ions. Their quality is comparable to that found for the same emitters…
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The creation of fluorescent defects in silicon is a key step** stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing, of W and G-centers in commercial silicon on insulator (SOI) previously implanted with 12C+ ions. Their quality is comparable to that found for the same emitters obtained with conventional implant processes; as quantified by the photoluminescence radiative lifetime, the broadening of their zero-phonon line (ZPL) and the evolution of these quantities with temperature. In addition to this, we show that both defects can be created without carbon implantation and that we can erase the G-centers by annealing while enhancing the W-centers' emission. These demonstrations are relevant to the deterministic and operando generation of quantum emitters in silicon.
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Submitted 7 April, 2023;
originally announced April 2023.
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The accomplishment of the Engineering Design Activities of IFMIF/EVEDA: The European Japanese project towards a Li(d,xn) fusion relevant neutron source
Authors:
J. Knaster,
A. Ibarra,
J. Abal,
A. Abou Sena,
F. Arbeiter,
F. Arranz,
J. M. Arroyo,
E. Bargallo,
P. Y. Beauvais,
D. Bernardi,
N. Casal,
J. M. Carmona,
N. Chauvin,
M. Comunian,
O. Delferriere,
A. Delgado,
P. Diaz Arocas,
U. Fischer,
M. Frisoni,
A. Garcia,
P. Garin,
R. Gobin,
P. Gouat,
F. Groesche,
R. Heidinger
, et al. (42 additional authors not shown)
Abstract:
The International Fusion Materials Irradiation Facility (IFMIF), presently in its Engineering Validation and Engineering Design Activities (EVEDA) phase under the frame of the Broader Approach Agreement between Europe and Japan, accomplished in summer 2013, on schedule, its EDA phase with the release of the engineering design report of the IFMIF plant, which is here described. Many improvements of…
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The International Fusion Materials Irradiation Facility (IFMIF), presently in its Engineering Validation and Engineering Design Activities (EVEDA) phase under the frame of the Broader Approach Agreement between Europe and Japan, accomplished in summer 2013, on schedule, its EDA phase with the release of the engineering design report of the IFMIF plant, which is here described. Many improvements of the design from former phases are implemented, particularly a reduction of beam losses and operational costs thanks to the superconducting accelerator concept, the re-location of the quench tank outside the test cell (TC) with a reduction of tritium inventory and a simplification on its replacement in case of failure, the separation of the irradiation modules from the shielding block gaining irradiation flexibility and enhancement of the remote handling equipment reliability and cost reduction, and the water cooling of the liner and biological shielding of the TC, enhancing the efficiency and economy of the related sub-systems. In addition, the maintenance strategy has been modified to allow a shorter yearly stop of the irradiation operations and a more careful management of the irradiated samples. The design of the IFMIF plant is intimately linked with the EVA phase carried out since the entry into force of IFMIF/EVEDA in June 2007.
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Submitted 28 December, 2021;
originally announced December 2021.
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Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring
Authors:
Ali Jaffal,
Philippe Regreny,
Gilles Patriarche,
Michel Gendry,
Nicolas Chauvin
Abstract:
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying on the vapor-liquid-solid method using molecular beam epitaxy. By interrupting the rotation of the sample during t…
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Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying on the vapor-liquid-solid method using molecular beam epitaxy. By interrupting the rotation of the sample during the radial growth sequence of the InP shell, hexagonal asymmetric (HA) NWs with long/short cross-section axes were obtained instead of the usual symmetrical shape. Polarization-resolved photoluminescence measurements have revealed a significant influence of the asymmetric shaped NWs on the InAs QD emission polarization with the photons being mainly polarized parallel to the NW long cross-section axis. A degree of linear polarization (DLP) up to 91% is obtained, being at the state of the art for the reported DLP values from QD-NWs. More importantly, the growth protocol herein is fully compatible with the current applications of HA NWs covering a wide range of devices such as polarized light emitting diodes and photodetectors.
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Submitted 15 June, 2021;
originally announced June 2021.
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Density-controlled growth of vertical InP nanowires on Si(111) substrates
Authors:
Ali Jaffal,
Philippe Regreny,
Nicolas Chauvin,
Michel Gendry
Abstract:
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method based on controlling the number and the size of the Au-In catalyst droplets in addition to the conditions for the NW nucleation. We show that the NW density can…
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A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method based on controlling the number and the size of the Au-In catalyst droplets in addition to the conditions for the NW nucleation. We show that the NW density can be tuned with values in the range of 18 μm-2 to < 0.1 μm-2 by the suitable choice of the In/Au catalyst beam equivalent pressure (BEP) ratio, by the phosphorous BEP and the growth temperature. The same degree of control is transferred to InAs/InP quantum dot-nanowires, taking advantage of the ultra-low density to study by micro-photoluminescence the optical properties of a single quantum dot-nanowires emitting in the telecom band monolithically grown on silicon. Optical spectroscopy at cryogenic temperature successfully confirmed the relevance of our method to excite single InAs quantum dots on the as-grown sample, which opens the path for large-scale applications based on single quantum dot-nanowire devices integrated on silicon.
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Submitted 3 March, 2020;
originally announced March 2020.
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InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
Authors:
Ali Jaffal,
Walid Redjem,
Philippe Regreny,
Hai Son Nguyen,
Sébastien Cueff,
Xavier Letartre,
Gilles Patriarche,
Emmanuel Rousseau,
Guillaume Cassabois,
Michel Gendry,
Nicolas Chauvin
Abstract:
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter t…
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Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a 30° beam divergence angle is demonstrated from a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, $g^2(0) = 0.05$, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs.
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Submitted 26 November, 2019; v1 submitted 27 June, 2019;
originally announced June 2019.
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Neutrons production on the IPHI accelerator for the validation of the design of the compact neutron source SONATE
Authors:
Alain Menelle,
Frederic Ott,
Fabien Prunes,
Benoit Homatter,
Burkhard Annighöfer,
Florence Porcher,
Christiane Alba-Simionesco,
Nicolas Chauvin,
Jérôme Schwindling,
Alain Letourneau,
Anthony Marchix,
Ngoc-Hoang Tran
Abstract:
We aim at building an accelerator based compact neutron source which would provide a thermal neutron flux on the order of 4E12 n.s-1.cm-2.sr-1. Such brilliance would put compact neutron sources on par with existing medium flux neutron research reactors. We performed the first neutron production tests on the IPHI proton accelerator at Saclay. The neutron fluxes were measured using gold foil activat…
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We aim at building an accelerator based compact neutron source which would provide a thermal neutron flux on the order of 4E12 n.s-1.cm-2.sr-1. Such brilliance would put compact neutron sources on par with existing medium flux neutron research reactors. We performed the first neutron production tests on the IPHI proton accelerator at Saclay. The neutron fluxes were measured using gold foil activation and 3He detectors. The measured fluxes were compared with MCNP and GEANT4 Monte Carlo simulations in which the whole experimental setup was modelled. There is a good agreement between the experimental measurements and the Monte-Carlo simulations. The available modelling tools will allow us to optimize the whole Target Moderator Reflector assembly together with the neutron scattering spectrometer geometries.
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Submitted 26 January, 2017; v1 submitted 1 December, 2016;
originally announced December 2016.
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Performances of Neutron Scattering Spectrometers on a Compact Neutron Source
Authors:
Xavier Fabrèges,
Alain Menelle,
Frédéric Ott,
Nicolas Chauvin,
Jérôme Schwindling,
Alain Letourneau,
Anthony Marchix,
Christiane Alba-Simionesco
Abstract:
There is currently a big effort put into the operation and construction of world class neutron scattering facilities (SNS and SNS-TS2 in the US, J-PARC in Japan, ESS in Europe, CSS in China, PIK in Russia). On the other hand, there exists a network of smaller neutron scattering facilities which play a key role in creating a large neutron scattering community who is able to efficiently use the exis…
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There is currently a big effort put into the operation and construction of world class neutron scattering facilities (SNS and SNS-TS2 in the US, J-PARC in Japan, ESS in Europe, CSS in China, PIK in Russia). On the other hand, there exists a network of smaller neutron scattering facilities which play a key role in creating a large neutron scattering community who is able to efficiently use the existing facilities. With the foreseen closure of the ageing nuclear research reactors, especially in Europe there is a risk of seeing a shrinking of the community who would then be able to use efficiently the world class facilities. There is thus a reflection being conducted in several countries for the replacement of smaller research reactors with low energy accelerator based sources. We consider here a reference design for a compact neutron source based on existing accelerator components. We estimate the performances of various types of neutron scattering instruments built around such a source. The results suggest that nowadays state of the art neutron scattering experiments could be successfully performed on such a compact source and that it is thus a viable replacement solution for neutron research reactors.
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Submitted 26 January, 2017; v1 submitted 1 December, 2016;
originally announced December 2016.
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Space-Charge Effect
Authors:
N. Chauvin
Abstract:
First, this chapter introduces the expressions for the electric and magnetic space-charge internal fields and forces induced by high-intensity beams. Then, the root-mean-square equation with space charge is derived and discussed. In the third section, the one-dimensional Child-Langmuir law, which gives the maximum current density that can be extracted from an ion source, is exposed. Space-charge c…
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First, this chapter introduces the expressions for the electric and magnetic space-charge internal fields and forces induced by high-intensity beams. Then, the root-mean-square equation with space charge is derived and discussed. In the third section, the one-dimensional Child-Langmuir law, which gives the maximum current density that can be extracted from an ion source, is exposed. Space-charge compensation can occur in the low-energy beam transport lines (located after the ion source). This phenomenon, which counteracts the spacecharge defocusing effect, is explained and its main parameters are presented. The fifth section presents an overview of the principal methods to perform beam dynamics numerical simulations. An example of a particles-in-cells code, SolMaxP, which takes into account space-charge compensation, is given. Finally, beam dynamics simulation results obtained with this code in the case of the IFMIF injector are presented.
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Submitted 29 October, 2014;
originally announced October 2014.
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Enhanced spontaneous emission from quantum dots in short photonic crystal waveguides
Authors:
Thang Ba Hoang,
Johannes Beetz,
Leonardo Midolo,
Matthias Skacel,
Matthias Lermer,
Martin Kamp,
Sven Höfling,
Laurent Balet,
Nicolas Chauvin,
Andrea Fiore
Abstract:
We report a study of the quantum dot emission in short photonic crystal waveguides. We observe that the quantum dot photoluminescence intensity and decay rate are strongly enhanced when the emission energy is in resonance with Fabry-Perot cavity modes in the slow-light regime of the dispersion curve. The experimental results are in agreement with previous theoretical predictions and further suppor…
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We report a study of the quantum dot emission in short photonic crystal waveguides. We observe that the quantum dot photoluminescence intensity and decay rate are strongly enhanced when the emission energy is in resonance with Fabry-Perot cavity modes in the slow-light regime of the dispersion curve. The experimental results are in agreement with previous theoretical predictions and further supported by three-dimensional finite element simulation. Our results show that the combination of slow group velocity and Fabry-Perot cavity resonance provides an avenue to efficiently channel photons from quantum dots into waveguides for integrated quantum photonic applications.
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Submitted 13 January, 2012;
originally announced January 2012.
