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Strong Purcell enhancement of an optical magnetic dipole transition
Authors:
Sebastian P. Horvath,
Christopher M. Phenicie,
Salim Ourari,
Mehmet T. Uysal,
Songtao Chen,
Łukasz Dusanowski,
Mouktik Raha,
Paul Stevenson,
Adam T. Turflinger,
Robert J. Cava,
Nathalie P. de Leon,
Jeff D. Thompson
Abstract:
Engineering the local density of states with nanophotonic structures is a powerful tool to control light-matter interactions via the Purcell effect. At optical frequencies, control over the electric field density of states is typically used to couple to and manipulate electric dipole transitions. However, it is also possible to engineer the magnetic density of states to control magnetic dipole tra…
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Engineering the local density of states with nanophotonic structures is a powerful tool to control light-matter interactions via the Purcell effect. At optical frequencies, control over the electric field density of states is typically used to couple to and manipulate electric dipole transitions. However, it is also possible to engineer the magnetic density of states to control magnetic dipole transitions. In this work, we experimentally demonstrate the optical magnetic Purcell effect using a single rare earth ion coupled to a nanophotonic cavity. We engineer a new single photon emitter, Er$^{3+}$ in MgO, where the electric dipole decay rate is strongly suppressed by the cubic site symmetry, giving rise to a nearly pure magnetic dipole optical transition. This allows the unambiguous determination of a magnetic Purcell factor $P_m=1040 \pm 30$. We further extend this technique to realize a magnetic dipole spin-photon interface, performing optical spin initialization and readout of a single Er$^{3+}$ electron spin. This work demonstrates the fundamental equivalence of electric and magnetic density of states engineering, and provides a new tool for controlling light-matter interactions for a broader class of emitters.
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Submitted 6 July, 2023;
originally announced July 2023.
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Indistinguishable telecom band photons from a single erbium ion in the solid state
Authors:
Salim Ourari,
Łukasz Dusanowski,
Sebastian P. Horvath,
Mehmet T. Uysal,
Christopher M. Phenicie,
Paul Stevenson,
Mouktik Raha,
Songtao Chen,
Robert J. Cava,
Nathalie P. de Leon,
Jeff D. Thompson
Abstract:
Atomic defects in the solid state are a key component of quantum repeater networks for long-distance quantum communication. Recently, there has been significant interest in rare earth ions, in particular Er$^{3+}$ for its telecom-band optical transition, but their application has been hampered by optical spectral diffusion precluding indistinguishable single photon generation. In this work we impl…
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Atomic defects in the solid state are a key component of quantum repeater networks for long-distance quantum communication. Recently, there has been significant interest in rare earth ions, in particular Er$^{3+}$ for its telecom-band optical transition, but their application has been hampered by optical spectral diffusion precluding indistinguishable single photon generation. In this work we implant Er$^{3+}$ into CaWO$_4$, a material that combines a non-polar site symmetry, low decoherence from nuclear spins, and is free of background rare earth ions, to realize significantly reduced optical spectral diffusion. For shallow implanted ions coupled to nanophotonic cavities with large Purcell factor, we observe single-scan optical linewidths of 150 kHz and long-term spectral diffusion of 63 kHz, both close to the Purcell-enhanced radiative linewidth of 21 kHz. This enables the observation of Hong-Ou-Mandel interference between successively emitted photons with high visibility, measured after a 36 km delay line. We also observe spin relaxation times $T_1$ = 3.7 s and $T_2$ > 200 $μ$s, with the latter limited by paramagnetic impurities in the crystal instead of nuclear spins. This represents a significant step towards the construction of telecom-band quantum repeater networks with single Er$^{3+}$ ions.
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Submitted 9 January, 2023;
originally announced January 2023.
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Antiferromagnetic Order in the Rare Earth Halide Perovskites CsEuBr$_3$ and CsEuCl$_3$
Authors:
Daniel B. Straus,
Tomasz Klimczuk,
Xianghan Xu,
Robert J. Cava
Abstract:
Bulk CsEuBr$_3$ and CsEuCl$_3$ are experimentally shown to be magnetic semiconductors that order antiferromagnetically at Neel temperatures of 2.0 K and 1.0 K respectively. Given that nanoparticles and thin films of CsEuCl$_3$ have been reported to order ferromagnetically at a similar temperature, our observation of antiferromagnetic ordering in CsEuBr$_3$ and CsEuCl$_3$ expands the possible appli…
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Bulk CsEuBr$_3$ and CsEuCl$_3$ are experimentally shown to be magnetic semiconductors that order antiferromagnetically at Neel temperatures of 2.0 K and 1.0 K respectively. Given that nanoparticles and thin films of CsEuCl$_3$ have been reported to order ferromagnetically at a similar temperature, our observation of antiferromagnetic ordering in CsEuBr$_3$ and CsEuCl$_3$ expands the possible applications of halide perovskites to now include spintronic devices where both ferromagnetic and antiferromagnetic devices can be fabricated from a single material. The conclusion that CsEuCl$_3$ can be used as a switchable magnetic material is also supported by our density-functional theory calculations.
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Submitted 29 September, 2022; v1 submitted 28 July, 2022;
originally announced July 2022.
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Neutral silicon vacancy centers in undoped diamond via surface control
Authors:
Zi-Huai Zhang,
Josh A. Zuber,
Lila V. H. Rodgers,
Xin Gui,
Paul Stevenson,
Minghao Li,
Marietta Batzer,
Marcel. li Grimau,
Brendan Shields,
Andrew M. Edmonds,
Nicola Palmer,
Matthew L. Markham,
Robert J. Cava,
Patrick Maletinsky,
Nathalie P. de Leon
Abstract:
Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage c…
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Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV0 centers display optically detected magnetic resonance and bulk-like optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV0 centers, as well as charge state engineering of other defects.
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Submitted 27 June, 2022;
originally announced June 2022.
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New material platform for superconducting transmon qubits with coherence times exceeding 0.3 milliseconds
Authors:
Alex P. M. Place,
Lila V. H. Rodgers,
Pranav Mundada,
Basil M. Smitham,
Mattias Fitzpatrick,
Zhaoqi Leng,
Anjali Premkumar,
Jacob Bryon,
Sara Sussman,
Guangming Cheng,
Trisha Madhavan,
Harshvardhan K. Babla,
Berthold Jaeck,
Andras Gyenis,
Nan Yao,
Robert J. Cava,
Nathalie P. de Leon,
Andrew A. Houck
Abstract:
The superconducting transmon qubit is a leading platform for quantum computing and quantum science. Building large, useful quantum systems based on transmon qubits will require significant improvements in qubit relaxation and coherence times, which are orders of magnitude shorter than limits imposed by bulk properties of the constituent materials. This indicates that relaxation likely originates f…
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The superconducting transmon qubit is a leading platform for quantum computing and quantum science. Building large, useful quantum systems based on transmon qubits will require significant improvements in qubit relaxation and coherence times, which are orders of magnitude shorter than limits imposed by bulk properties of the constituent materials. This indicates that relaxation likely originates from uncontrolled surfaces, interfaces, and contaminants. Previous efforts to improve qubit lifetimes have focused primarily on designs that minimize contributions from surfaces. However, significant improvements in the lifetime of two-dimensional transmon qubits have remained elusive for several years. Here, we fabricate two-dimensional transmon qubits that have both lifetimes and coherence times with dynamical decoupling exceeding 0.3 milliseconds by replacing niobium with tantalum in the device. We have observed increased lifetimes for seventeen devices, indicating that these material improvements are robust, paving the way for higher gate fidelities in multi-qubit processors.
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Submitted 28 February, 2020;
originally announced March 2020.
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Understanding the Instability of the Halide Perovskite CsPbI$_3$ through Temperature-Dependent Structural Analysis
Authors:
Daniel B. Straus,
Shu Guo,
Milinda Abeykoon,
Robert J. Cava
Abstract:
Despite the tremendous interest in halide perovskites in solar cells, the reason that the all-inorganic perovskite CsPbI$_3$ is unstable at room temperature remains mysterious. Here single-crystal X-ray diffraction and powder pair distribution function (PDF) measurements characterize bulk perovskite CsPbI$_3$ from 100 to 295 K to elucidate its thermodynamic instability. While Cs occupies a single…
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Despite the tremendous interest in halide perovskites in solar cells, the reason that the all-inorganic perovskite CsPbI$_3$ is unstable at room temperature remains mysterious. Here single-crystal X-ray diffraction and powder pair distribution function (PDF) measurements characterize bulk perovskite CsPbI$_3$ from 100 to 295 K to elucidate its thermodynamic instability. While Cs occupies a single site from 100 to 150 K, it splits between two sites from 175 to 295 K with the second site having a lower effective coordination number, which along with other structural parameters suggests that Cs rattles in its coordination polyhedron. PDF measurements reveal that on the length scale of the unit cell, the Pb-I octahedra concurrently become greatly distorted, with one of the I-Pb-I angles approaching 82° compared to the ideal 90°. The rattling of Cs, low number of Cs-I contacts, and high degree of octahedral distortion cause the instability of perovskite-phase CsPbI$_3$. These results provide detailed structural information that may help to engineer greater stability of CsPbI$_3$ and other all-inorganic perovskites for use in solar cells.
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Submitted 25 February, 2020;
originally announced February 2020.
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Narrow optical linewidths in erbium implanted in TiO$_2$
Authors:
Christopher M. Phenicie,
Paul Stevenson,
Sacha Welinski,
Brendon C. Rose,
Abraham T. Asfaw,
Robert J. Cava,
Stephen A. Lyon,
Nathalie P. de Leon,
Jeff D. Thompson
Abstract:
Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magn…
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Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er$^{3+}$ ions can be introduced via ion implantation into TiO$_2$, a host crystal that has not been studied extensively for rare earth ions and has a low natural abundance of nuclear spins. We observe efficient incorporation of the implanted Er$^{3+}$ into the Ti$^{4+}$ site (40% yield), and measure narrow inhomogeneous spin and optical linewidths (20 and 460 MHz, respectively) that are comparable to bulk-doped crystalline hosts for Er$^{3+}$. This work demonstrates that ion implantation is a viable path to studying rare earth ions in new hosts, and is a significant step towards realizing individually addressed rare earth ions with long spin coherence times for quantum technologies.
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Submitted 13 September, 2019;
originally announced September 2019.
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Kinetically Stable Single Crystals of Perovskite-Phase CsPbI${_3}$
Authors:
Daniel B. Straus,
Shu Guo,
Robert J. Cava
Abstract:
We use solid-state methods to synthesize single crystals of perovskite-phase cesium lead iodide ($γ$-CsPbI3) that are kinetically stable at room temperature. Single crystal X-ray diffraction characterization shows that the compound is orthorhombic with the GdFeO3 structure at room temperature. Unlike conventional semiconductors, the optical absorption and the joint density-of-states of bulk $γ$-Cs…
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We use solid-state methods to synthesize single crystals of perovskite-phase cesium lead iodide ($γ$-CsPbI3) that are kinetically stable at room temperature. Single crystal X-ray diffraction characterization shows that the compound is orthorhombic with the GdFeO3 structure at room temperature. Unlike conventional semiconductors, the optical absorption and the joint density-of-states of bulk $γ$-CsPbI3 is greatest near the band edge and decreases beyond Eg for at least 1.9 eV. Bulk $γ$-CsPbI3 does not show an excitonic resonance and has an optical band gap of 1.63(3) eV, ~90 meV smaller than has been reported in thin films; these and other differences indicate that previously-measured thin film $γ$-CsPbI3 shows signatures of quantum confinement. By flowing gases over $γ$-CsPbI3 during in situ powder X-ray diffraction measurements, we confirm that $γ$-CsPbI3 is stable to oxygen but rapidly and catalytically converts to non-perovskite $δ$-CsPbI3 in the presence of moisture. Our results on bulk $γ$-CsPbI3 provide vital parameters for theoretical and experimental investigations into perovskite-phase CsPbI3 that will the guide the design and synthesis of atmospherically stable inorganic halide perovskites.
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Submitted 6 June, 2019; v1 submitted 29 May, 2019;
originally announced May 2019.
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Fourier analysis of the IR response of van der Waals materials
Authors:
Anjan A. Reijnders,
L. J. Sandilands,
G. Pohl,
K. W. Plumb,
Young-June Kim,
S. Jia,
M. E. Charles,
R. J. Cava,
K. S. Burch
Abstract:
In this letter, we report on an analytical technique for optical investigations of semitransparent samples. By Fourier transforming optical spectra with Fabry-Perot resonances we extract information about sample thickness and its discrete variations. Moreover, this information is used to recover optical spectra devoid of Fabry-Perot fringes, which simplifies optical modelling, and can reveal previ…
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In this letter, we report on an analytical technique for optical investigations of semitransparent samples. By Fourier transforming optical spectra with Fabry-Perot resonances we extract information about sample thickness and its discrete variations. Moreover, this information is used to recover optical spectra devoid of Fabry-Perot fringes, which simplifies optical modelling, and can reveal previously concealed spectral features. To illustrate its use, we apply our technique to a Si wafer as well as six different cleavable layered materials, including topological insulators, thermoelectrics, and magnetic insulators. In the layered materials, we find strong evidence of large step edges and thickness inhomogeneity, and cannot conclusively exclude the presence of voids in the bulk of cleaved samples. This could strongly affect the interpretation of transport and optical data of crystals with topologically protected surfaces states.
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Submitted 24 July, 2014;
originally announced July 2014.
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Optical evidence of surface state suppression in Bi based topological insulators
Authors:
Anjan A. Reijnders,
Y. Tian,
L. J. Sandilands,
G. Pohl,
I. D. Kivlichan,
S. Y. Frank Zhao,
S. Jia,
M. E. Charles,
R. J. Cava,
Nasser Alidoust,
Suyang Xu,
Madhab Neupane,
M. Zahid Hasan,
X. Wang,
S. W. Cheong,
K. S. Burch
Abstract:
A key challenge in condensed matter research is the optimization of topological insulator (TI) compounds for the study and future application of their unique surface states. Truly insulating bulk states would allow the exploitation of predicted surface state properties, such as protection from backscattering, dissipationless spin-polarized currents, and the emergence of novel particles. Towards th…
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A key challenge in condensed matter research is the optimization of topological insulator (TI) compounds for the study and future application of their unique surface states. Truly insulating bulk states would allow the exploitation of predicted surface state properties, such as protection from backscattering, dissipationless spin-polarized currents, and the emergence of novel particles. Towards this end, major progress was recently made with the introduction of highly resistive Bi$_2$Te$_2$Se, in which surface state conductance and quantum oscillations are observed at low temperatures. Nevertheless, an unresolved and pivotal question remains: while room temperature ARPES studies reveal clear evidence of TI surface states, their observation in transport experiments is limited to low temperatures. A better understanding of this surface state suppression at elevated temperatures is of fundamental interest, and crucial for pushing the boundary of device applications towards room-temperature operation. In this work, we simultaneously measure TI bulk and surface states via temperature dependent optical spectroscopy, in conjunction with transport and ARPES measurements. We find evidence of coherent surface state transport at low temperatures, and propose that phonon mediated coupling between bulk and surface states suppresses surface conductance as temperature rises.
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Submitted 2 April, 2014;
originally announced April 2014.
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Discovery of several large families of Topological Insulator classes with backscattering-suppressed spin-polarized single-Dirac-cone on the surface
Authors:
Su-Yang Xu,
L. A. Wray,
Y. Xia,
R. Shankar,
A. Petersen,
A. Fedorov,
H. Lin,
A. Bansil,
Y. S. Hor,
D. Grauer,
R. J. Cava,
M. Z. Hasan
Abstract:
Three dimensional (3D) topological insulators are novel states of quantum matter that feature spin-momentum locked helical Dirac fermions on their surfaces and hold promise to open new vistas in spintronics, quantum computing and fundamental physics. Experimental realization of many of the predicted topological phenomena requires finding multi-variant topological band insulators which can be multi…
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Three dimensional (3D) topological insulators are novel states of quantum matter that feature spin-momentum locked helical Dirac fermions on their surfaces and hold promise to open new vistas in spintronics, quantum computing and fundamental physics. Experimental realization of many of the predicted topological phenomena requires finding multi-variant topological band insulators which can be multiply connected to magnetic semiconductors and superconductors. Here we present our theoretical prediction and experimental discovery of several new topological insulator classes in AB2X4(124), A2B2X5(225), MN4X7(147), A2X2X'(221) [A,B=Pb,Ge,Sb,Bi and M,N=Pb,Bi and X,X'=Chalcogen family]. We observe that these materials feature gaps up to about 0.35eV. Multi-variant nature allows for diverse surface dispersion tunability, Fermi surface spin-vortex or textured configurations and spin-dependent electronic interference signaling novel quantum transport processes on the surfaces of these materials. Our discovery also provides several new platforms to search for topological-superconductivity (arXiv:0912.3341v1 (2009)) in these exotic materials.
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Submitted 29 July, 2010;
originally announced July 2010.
