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Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
Authors:
T. Moretti,
M. Milanesio,
R. Cardella,
T. Kugathasan,
A. Picardi,
I. Semendyaev,
M. Elviretti,
H. Rücker,
K. Nakamura,
Y. Takubo,
M. Togawa,
F. Cadoux,
R. Cardarelli,
L. Cecconi,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
L. Iodice,
R. Kotitsa,
C. Magliocca,
M. Nessi,
A. Pizarro-Medina,
J. Sabater Iglesias
, et al. (5 additional authors not shown)
Abstract:
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a…
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Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively.
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Submitted 21 June, 2024; v1 submitted 19 April, 2024;
originally announced April 2024.
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First Measurement of the $ν_e$ and $ν_μ$ Interaction Cross Sections at the LHC with FASER's Emulsion Detector
Authors:
FASER Collaboration,
Roshan Mammen Abraham,
John Anders,
Claire Antel,
Akitaka Ariga,
Tomoko Ariga,
Jeremy Atkinson,
Florian U. Bernlochner,
Tobias Boeckh,
Jamie Boyd,
Lydia Brenner,
Angela Burger,
Franck Cadoux,
Roberto Cardella,
David W. Casper,
Charlotte Cavanagh,
Xin Chen,
Andrea Coccaro,
Stephane Debieux,
Monica D'Onofrio,
Ansh Desai,
Sergey Dmitrievsky,
Sinead Eley,
Yannick Favre,
Deion Fellers
, et al. (80 additional authors not shown)
Abstract:
This paper presents the first results of the study of high-energy electron and muon neutrino charged-current interactions in the FASER$ν$ emulsion/tungsten detector of the FASER experiment at the LHC. A subset of the FASER$ν$ volume, which corresponds to a target mass of 128.6~kg, was exposed to neutrinos from the LHC $pp$ collisions with a centre-of-mass energy of 13.6~TeV and an integrated lumin…
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This paper presents the first results of the study of high-energy electron and muon neutrino charged-current interactions in the FASER$ν$ emulsion/tungsten detector of the FASER experiment at the LHC. A subset of the FASER$ν$ volume, which corresponds to a target mass of 128.6~kg, was exposed to neutrinos from the LHC $pp$ collisions with a centre-of-mass energy of 13.6~TeV and an integrated luminosity of 9.5 fb$^{-1}$. Applying stringent selections requiring electrons with reconstructed energy above 200~GeV, four electron neutrino interaction candidate events are observed with an expected background of $0.025^{+0.015}_{-0.010}$, leading to a statistical significance of 5.2$σ$. This is the first direct observation of electron neutrino interactions at a particle collider. Eight muon neutrino interaction candidate events are also detected, with an expected background of $0.22^{+0.09}_{-0.07}$, leading to a statistical significance of 5.7$σ$. The signal events include neutrinos with energies in the TeV range, the highest-energy electron and muon neutrinos ever detected from an artificial source. The energy-independent part of the interaction cross section per nucleon is measured over an energy range of 560--1740 GeV (520--1760 GeV) for $ν_e$ ($ν_μ$) to be $(1.2_{-0.7}^{+0.8}) \times 10^{-38}~\mathrm{cm}^{2}\,\mathrm{GeV}^{-1}$ ($(0.5\pm0.2) \times 10^{-38}~\mathrm{cm}^{2}\,\mathrm{GeV}^{-1}$), consistent with Standard Model predictions. These are the first measurements of neutrino interaction cross sections in those energy ranges.
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Submitted 19 March, 2024;
originally announced March 2024.
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Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser
Authors:
M. Milanesio,
L. Paolozzi,
T. Moretti,
A. Latshaw,
L. Bonacina,
R. Cardella,
T. Kugathasan,
A. Picardi,
M. Elviretti,
H. Rücker,
R. Cardarelli,
L. Cecconi,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
L. Iodice,
R. Kotitsa,
C. Magliocca,
M. Nessi,
A. Pizarro-Medina,
J. Sabater Iglesias,
I. Semendyaev,
J. Saidi,
M. Vicente Barreto Pinto,
S. Zambito
, et al. (1 additional authors not shown)
Abstract:
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully deplete…
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The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. At the highest frontend power density tested of 2.7 W/cm2, the time resolution with the femtosecond laser pulses was found to be 45 ps for signals generated by 1200 electrons, and 3 ps in the case of 11k electrons, which corresponds approximately to 0.4 and 3.5 times the most probable value of the charge generated by a minimum-ionizing particle. The results were compared with testbeam data taken with the same prototype to evaluate the time jitter produced by the fluctuations of the charge collection.
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Submitted 11 February, 2024; v1 submitted 2 January, 2024;
originally announced January 2024.
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Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer
Authors:
M. Milanesio,
L. Paolozzi,
T. Moretti,
R. Cardella,
T. Kugathasan,
F. Martinelli,
A. Picardi,
I. Semendyaev,
S. Zambito,
K. Nakamura,
Y. Tabuko,
M. Togawa,
M. Elviretti,
H. Rücker,
F. Cadoux,
R. Cardarelli,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
L. Iodice,
R. Kotitsa,
C. Magliocca,
M. Nessi
, et al. (5 additional authors not shown)
Abstract:
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted se…
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A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2.
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Submitted 30 October, 2023;
originally announced October 2023.
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20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer
Authors:
S. Zambito,
M. Milanesio,
T. Moretti,
L. Paolozzi,
M. Munker,
R. Cardella,
T. Kugathasan,
F. Martinelli,
A. Picardi,
M. Elviretti,
H. Rücker,
A. Trusch,
F. Cadoux,
R. Cardarelli,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
L. Iodice,
R. Kotitsa,
C. Magliocca,
M. Nessi,
A. Pizarro-Medina,
J. Sabater Iglesias
, et al. (3 additional authors not shown)
Abstract:
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel…
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A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel matrix show that the sensor has a 130 V wide bias-voltage operation plateau at which the efficiency is 99.8%. Although this prototype does not include an internal gain layer, the design optimised for timing of the sensor and the front-end electronics provides a time resolutions of 20 ps.
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Submitted 28 January, 2023;
originally announced January 2023.
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Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
Authors:
G. Iacobucci,
S. Zambito,
M. Milanesio,
T. Moretti,
J. Saidi,
L. Paolozzi,
M. Munker,
R. Cardella,
F. Martinelli,
A. Picardi,
H. Rücker,
A. Trusch,
P. Valerio,
F. Cadoux,
R. Cardarelli,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
Y. Gurimskaya,
R. Kotitsa,
C. Magliocca,
M. Nessi,
A. Pizarro-Medina
, et al. (2 additional authors not shown)
Abstract:
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector…
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The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region.
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Submitted 23 August, 2022;
originally announced August 2022.
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Picosecond Avalanche Detector -- working principle and gain measurement with a proof-of-concept prototype
Authors:
L. Paolozzi,
M. Munker,
R. Cardella,
M. Milanesio,
Y. Gurimskaya,
F. Martinelli,
A. Picardi,
H. Rücker,
A. Trusch,
P. Valerio,
F. Cadoux,
R. Cardarelli,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
R. Kotitsa,
C. Magliocca,
T. Moretti,
M. Nessi,
A. Pizarro Medina,
J. Sabater Iglesias,
J. Saidi,
M. Vicente Barreto Pinto
, et al. (2 additional authors not shown)
Abstract:
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The si…
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The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 $μ$m pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a $^{55}$Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the $^{55}$Fe source limits the effective gain.
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Submitted 25 September, 2022; v1 submitted 16 June, 2022;
originally announced June 2022.
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Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
Authors:
G. Iacobucci,
L. Paolozzi,
P. Valerio,
T. Moretti,
F. Cadoux,
R. Cardarelli,
R. Cardella,
S. Débieux,
Y. Favre,
D. Ferrere,
S. Gonzalez-Sevilla,
Y. Gurimskaya,
R. Kotitsa,
C. Magliocca,
F. Martinelli,
M. Milanesio,
M. Münker,
M. Nessi,
A. Picardi,
J. Saidi,
H. Rücker,
M. Vicente Barreto Pinto,
S. Zambito
Abstract:
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $μ$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9^{+0.1}_{-0.2}\right)$% w…
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A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $μ$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9^{+0.1}_{-0.2}\right)$% was measured together with a time resolution of $(36.4 \pm 0.8)$ps at the highest preamplifier bias current working point of 150 $μ$A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.
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Submitted 21 January, 2022; v1 submitted 16 December, 2021;
originally announced December 2021.
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Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications
Authors:
Fulvio Martinelli,
Chiara Magliocca,
Roberto Cardella,
Edoardo Charbon,
Giuseppe Iacobucci,
Marzio Nessi,
Lorenzo Paolozzi,
Holger Rücker,
Pierpaolo Valerio
Abstract:
This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-end electronics inside the sensitive area of the pixels and to identify the configuration that could satisfy at best the specifications of the exp…
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This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-end electronics inside the sensitive area of the pixels and to identify the configuration that could satisfy at best the specifications of the experiment. Self-induced noise, instabilities and cross-talk were minimised to cope with the several challenges associated to the integration of pre-amplifiers and discriminators inside the pixels. The methodology used in the characterisation and the design choices will also be described. Two of the variants studied here will be implemented in the pre-production ASIC of the FASER experiment pre-shower for further tests.
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Submitted 22 November, 2021;
originally announced November 2021.
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DMAPS Monopix developments in large and small electrode designs
Authors:
Christian Bespin,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Leyre Flores Sanz de Acedo,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Cesar Augusto Marin Tobon,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
Francesco Piro,
Petra Riedler
, et al. (8 additional authors not shown)
Abstract:
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows…
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LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.
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Submitted 9 July, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
Authors:
M. Dyndal,
V. Dao,
P. Allport,
I. Asensi Tortajada,
M. Barbero,
S. Bhat,
D. Bortoletto,
I. Berdalovic,
C. Bespin,
C. Buttar,
I. Caicedo,
R. Cardella,
F. Dachs,
Y. Degerli,
H. Denizli,
L. Flores Sanz de Acedo,
P. Freeman,
L. Gonella,
A. Habib,
T. Hemperek,
T. Hirono,
B. Hiti,
T. Kugathasan,
I. Mandić,
D. Maneuski
, et al. (19 additional authors not shown)
Abstract:
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silico…
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Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$.
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Submitted 14 December, 2019; v1 submitted 26 September, 2019;
originally announced September 2019.
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Measurement of the relative response of TowerJazz Mini-MALTA CMOS prototypes at Diamond Light Source
Authors:
Maria Mironova,
Kaloyan Metodiev,
Phil Allport,
Ivan Berdalovic,
Daniela Bortoletto,
Craig Buttar,
Roberto Cardella,
Valerio Dao,
Mateusz Dyndal,
Patrick Freeman,
Leyre Flores Sanz de Acedo,
Laura Gonella,
Thanushan Kugathasan,
Heinz Pernegger,
Francesco Piro,
Richard Plackett,
Petra Riedler,
Abhishek Sharma,
Enrico Junior Schioppa,
Ian Shipsey,
Carlos Solans Sanchez,
Walter Snoeys,
Hakan Wennloef,
Daniel Weatherill,
Daniel Wood
, et al. (1 additional authors not shown)
Abstract:
This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were co…
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This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous $\mathrm{n^-}$ layer layout and front-end, and extra deep p-well and $\mathrm{n^-}$ gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated.
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Submitted 2 October, 2019; v1 submitted 18 September, 2019;
originally announced September 2019.
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The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade
Authors:
Ivan Caicedo,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Christian Bespin,
Patrick Breugnon,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
David-Leon Pohl,
Petra Riedler,
Alexandre Rozanov,
Piotr Rymaszewski
, et al. (5 additional authors not shown)
Abstract:
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>…
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Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed.
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Submitted 25 April, 2019; v1 submitted 10 February, 2019;
originally announced February 2019.
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CMOS Monolithic Pixel Sensors based on the Column-Drain Architecture for the HL-LHC Upgrade
Authors:
K. Moustakas,
M. Barbero,
I. Berdalovic,
C. Bespin,
P. Breugnon,
I. Caicedo,
R. Cardella,
Y. Degerli,
N. Egidos Plaja,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krueger,
T. Kugathasan,
C. A. Marin Tobon,
P. Pangaud,
H. Pernegger,
E. J. Schioppa,
W. Snoeys,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based o…
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Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC).
LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of $50x250~μm^{2}$ and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99\% has been measured after irradiation to $1\cdot10^{15}~n_{eq}/cm^{2}$. TJ-Monopix is a large scale $(1x2~cm^{2})$ prototype featuring pixels of $36x40~μm^{2}$ size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance ($<=3~fF$) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) $\approx11e^{-}$, threshold $\approx300~e^-$, threshold dispersion $\approx30~e^-$ and total power consumption lower than $120~mW/cm^2$.
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Submitted 10 September, 2018;
originally announced September 2018.
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Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade
Authors:
T. Wang,
M. Barbero,
I. Berdalovic,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
R. Cardella,
Z. Chen,
Y. Degerli,
N. Egidos,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krüger,
T. Kugathasan,
F. Hügging,
C. A. Marin Tobon,
K. Moustakas,
P. Pangaud,
P. Schwemling,
H. Pernegger,
D-L. Pohl,
A. Rozanov
, et al. (3 additional authors not shown)
Abstract:
Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being develo…
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Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown.
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Submitted 29 September, 2017;
originally announced October 2017.
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Experimental setup and procedure for the measurement of the 7Be(n,p)7Li reaction at n_TOF
Authors:
M. Barbagallo,
J. Andrzejewski,
M. Mastromarco,
J. Perkowski,
L. A. Damone,
A. Gawlik,
L. Cosentino,
P. Finocchiaro,
E. A. Maugeri,
A. Mazzone,
R. Dressler,
S. Heinitz,
N. Kivel,
D. Schumann,
N. Colonna,
O. Aberle,
S. Amaducci,
L. Audouin,
M. Bacak,
J. Balibrea,
F. Bečvář,
G. Bellia,
E. Berthoumieux,
J. Billowes,
D. Bosnar
, et al. (103 additional authors not shown)
Abstract:
Following the completion of the second neutron beam line and the related experimental area (EAR2) at the n_TOF spallation neutron source at CERN, several experiments were planned and performed. The high instantaneous neutron flux available in EAR2 allows to investigate neutron indiced reactions with charged particles in the exit channel even employing targets made out of small amounts of short-liv…
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Following the completion of the second neutron beam line and the related experimental area (EAR2) at the n_TOF spallation neutron source at CERN, several experiments were planned and performed. The high instantaneous neutron flux available in EAR2 allows to investigate neutron indiced reactions with charged particles in the exit channel even employing targets made out of small amounts of short-lived radioactive isotopes. After the successful measurement of the 7Be(n,α)α cross section, the 7Be(n,p)7Li reaction was studied in order to provide still missing cross section data of relevance for Big Bang Nucleosynthesis (BBN), in an attempt to find a solution to the cosmological Lithium abundance problem. This paper describes the experimental setup employed in such a measurement and its characterization.
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Submitted 3 August, 2017;
originally announced August 2017.
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Experimental setup and procedure for the measurement of the 7Be(n,α)α reaction at n_TOF
Authors:
L. Cosentino,
A. Musumarra,
M. Barbagallo,
A. Pappalardo,
N. Colonna,
L. Damone,
M. Piscopo,
P. Finocchiaro,
E. Maugeri,
S. Heinitz,
D. Schumann,
R. Dressler,
N. Kivel,
O. Aberle,
J. Andrzejewski,
L. Audouin,
M. Ayranov,
M. Bacak,
S. Barros,
J. Balibrea-Correa,
V. Beecares,
F. Becvar,
C. Beinrucker,
E. Berthoumieux,
J. Billowes
, et al. (107 additional authors not shown)
Abstract:
The newly built second experimental area EAR2 of the n_TOF spallation neutron source at CERN allows to perform (n, charged particles) experiments on short-lived highly radioactive targets. This paper describes a detection apparatus and the experimental procedure for the determination of the cross-section of the 7Be(n,α) reaction, which represents one of the focal points toward the solution of the…
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The newly built second experimental area EAR2 of the n_TOF spallation neutron source at CERN allows to perform (n, charged particles) experiments on short-lived highly radioactive targets. This paper describes a detection apparatus and the experimental procedure for the determination of the cross-section of the 7Be(n,α) reaction, which represents one of the focal points toward the solution of the cosmological Lithium abundance problem, and whose only measurement, at thermal energy, dates back to 1963. The apparently unsurmountable experimental difficulties stemming from the huge 7Be γ-activity, along with the lack of a suitable neutron beam facility, had so far prevented further measurements. The detection system is subject to considerable radiation damage, but is capable of disentangling the rare reaction signals from the very high background. This newly developed setup could likely be useful also to study other challenging reactions requiring the detectors to be installed directly in the neutron beam.
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Submitted 1 April, 2016;
originally announced April 2016.
