Potential of the three-terminal heterojunction bipolar transistor solar cell for space applications
Authors:
Antonio Martí,
Pablo García-Linares,
Marius Zehender,
Simon A. Svatek,
Irene Artacho,
Ana Belén Cristóbal,
José R. González,
Carsten Baur,
Iñigo Ramiro,
Federica Cappelluti,
Elisa Antolín
Abstract:
Multi-terminal multi-junction solar cells (MJSC) offer higher efficiency potential than series connected (two-terminal) ones. In addition, for terrestrial applications, the efficiency of multi-terminal solar cells is less sensitive to solar spectral variations than the two-terminal series-connected one. In space, generally, cells are always illuminated with AM0 spectrum and no impact is expected f…
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Multi-terminal multi-junction solar cells (MJSC) offer higher efficiency potential than series connected (two-terminal) ones. In addition, for terrestrial applications, the efficiency of multi-terminal solar cells is less sensitive to solar spectral variations than the two-terminal series-connected one. In space, generally, cells are always illuminated with AM0 spectrum and no impact is expected from spectral variations. Still, in space, the multi-terminal approach offers some advantages in comparison with the series-connected architecture approach derived from a higher end of life (EOL) efficiency. In this work we review the potential of multi-terminal solar cells for achieving extended EOL efficiencies with emphasis in the potential of the three-terminal heterojunction bipolar transistor solar cell, a novel multi-terminal MJSC architecture with a simplified structure not requiring, for example, tunnel junctions.
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Submitted 14 May, 2020;
originally announced June 2020.
Light-trap** enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off
Authors:
F Cappelluti,
D Kim,
M van Eerden,
AP Cédola,
T Aho,
G Bissels,
F Elsehrawy,
J Wu,
H Liu,
P Mulder,
G Bauhuis,
J Schermer,
T Niemi,
M Guina
Abstract:
We report thin-film InAs/GaAs quantum dot (QD) solar cells with $n-i-p{+}$ deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate twofold enhancement of the QD photocurrent in the ELO QD cell compared to the wafer-based QD cell. In the GaAs wavelength range, the ELO QD cell perfectly prese…
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We report thin-film InAs/GaAs quantum dot (QD) solar cells with $n-i-p{+}$ deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate twofold enhancement of the QD photocurrent in the ELO QD cell compared to the wafer-based QD cell. In the GaAs wavelength range, the ELO QD cell perfectly preserves the current collection efficiency of the baseline single-junction ELO cell. We demonstrate by full-wave optical simulations that integrating a micro-patterned diffraction grating in the ELO cell rearside provides more than tenfold enhancement of the near-infrared light harvesting by QDs. Experimental results are thoroughly discussed with the help of physics-based simulations to single out the impact of QD dynamics and defects on the cell photovoltaic behavior. It is demonstrated that non radiative recombination in the QD stack is the bottleneck for the open circuit voltage ($V_{oc}$) of the reported devices. More important, our theoretical calculations demonstrate that the $V_{oc}$ offest of 0.3 V from the QD ground state identified by \emph{Tanabe et al., 2012}, from a collection of experimental data of high quality III-V QD solar cells is a reliable - albeit conservative - metric to gauge the attainable $V_{oc}$ and to quantify the scope for improvement by reducing non radiative recombination. Provided that material quality issues are solved, we demonstrate - by transport and rigorous electromagnetic simulations - that light-trap** enhanced thin-film cells with twenty InAs/GaAs QD layers reach efficiency higher than 28\% under unconcentrated light, ambient temperature. If photon recycling can be fully exploited, 30\% efficiency is deemed to be feasible.
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Submitted 25 May, 2018;
originally announced May 2018.