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Precision frequency tuning of tunable transmon qubits using alternating-bias assisted annealing
Authors:
Xiqiao Wang,
Joel Howard,
Eyob A. Sete,
Greg Stiehl,
Cameron Kopas,
Stefano Poletto,
Xian Wu,
Mark Field,
Nicholas Sharac,
Christopher Eckberg,
Hilal Cansizoglu,
Raja Katta,
Josh Mutus,
Andrew Bestwick,
Kameshwar Yadavalli,
David P. Pappas
Abstract:
Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaini…
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Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaining high coherence. Here, we demonstrate precision tuning of the maximum $|0\rangle\rightarrow |1\rangle$ transition frequency ($f_{01}^{\rm max}$) of tunable transmon qubits by performing ABAA at room temperature using commercially available test equipment. We characterize the impact of junction relaxation and aging on resistance spread after tuning, and demonstrate a frequency equivalent tuning precision of 7.7 MHz ($0.17\%$) based on targeted resistance tuning on hundreds of qubits, with a resistance tuning range up to $18.5\%$. Cryogenic measurements on tuned and untuned qubits show evidence of improved coherence after ABAA with no significant impact on tunability. Despite a small global offset, we show an empirical $f_{01}^{\rm max}$ tuning precision of 18.4 MHz by tuning a set of multi-qubit processors targeting their designed Hamiltonians. We experimentally characterize high-fidelity parametric resonance iSWAP gates on two ABAA-tuned 9-qubit processors with fidelity as high as $99.51\pm 0.20\%$. On the best-performing device, we measured across the device a median fidelity of $99.22\%$ and an average fidelity of $99.13\pm 0.12 \%$. Yield modeling analysis predicts high detuning-edge-yield using ABAA beyond the 1000-qubit scale. These results demonstrate the cutting-edge capability of frequency targeting using ABAA and open up a new avenue to systematically improving Hamiltonian targeting and optimization for scaling high-performance superconducting quantum processors.
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Submitted 8 July, 2024;
originally announced July 2024.
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Avalanche Photodetectors with Photon Trap** Structures for Biomedical Imaging Applications
Authors:
Cesar Bartolo-Perez,
Soroush Ghandiparsi,
Ahmed S. Mayet,
Hilal Cansizoglu,
Yang Gao,
Wayesh Qarony,
Ahasan Ahamed,
Shih-Yuan Wang,
Simon R. Cherry,
M. Saif Islam,
Gerard Arino-Estrada
Abstract:
Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we evaluate the gain, detection efficiency, and timing performance of avalanche photodiodes (APD) with photon trap** nanostructures for photons with 45…
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Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we evaluate the gain, detection efficiency, and timing performance of avalanche photodiodes (APD) with photon trap** nanostructures for photons with 450 and 850 nm wavelengths. At 850 nm wavelength, our photon trap** avalanche photodiodes showed 30 times higher gain, an increase from 16% to >60% enhanced absorption efficiency, and a 50% reduction in the full width at half maximum (FWHM) pulse response time close to the breakdown voltage. At 450 nm wavelength, the external quantum efficiency increased from 54% to 82%, while the gain was enhanced more than 20-fold. Therefore, silicon APDs with photon trap** structures exhibited a dramatic increase in absorption compared to control devices. Results suggest very thin devices with fast timing properties and high absorption between the near-ultraviolet and the near infrared region can be manufactured for high-speed applications in biomedical imaging. This study paves the way towards obtaining single photon detectors with photon trap** structures with gains above 10^6 for the entire visible range
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Submitted 27 April, 2021;
originally announced April 2021.
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Maximizing absorption in photon trap** ultra-fast silicon photodetectors
Authors:
Cesar Bartolo-Perez,
Wayesh Qarony,
Soroush Ghandiparsi,
Ahmed S. Mayet,
Ahasan Ahamed,
Hilal Cansizoglu,
Yang Gao,
Ekaterina Ponizovskaya Devine,
Toshishige Yamada,
Aly F Elrefaie,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical imaging. However, such photodetectors present a bandwidth-absorption trade-off at those wavelengths that have limited their implementation. Photon trap** structu…
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Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical imaging. However, such photodetectors present a bandwidth-absorption trade-off at those wavelengths that have limited their implementation. Photon trap** structures address this trade-off by enhancing the light-matter interactions, but maximizing their performance remains a challenge due to a multitude of factors influencing their design and fabrication. In this paper, strategies to improve the photon trap** effect while enhancing the speed of operation are investigated. By optimizing the design of photon trap** structures and experimentally integrated them in high-speed photodetectors, a simultaneous broadband absorption efficiency enhancement up to 1000% and a capacitance reduction of more than 50% has been achieved. Such work also allows to present empirical equations to correlate the quantum efficiency of photodetectors with the physical properties of the photon-trap** structures, material characteristics, and limitations of the fabrication technologies. The results obtained, open routes towards designing cost-effective CMOS integrated.
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Submitted 22 December, 2020;
originally announced December 2020.
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Quantum efficiency enhancement of mid infrared photodetectors with photon trap** micro-structures
Authors:
Ekaterina Ponizovskaya Devine,
Hilal Cansizoglu,
Yang Gao,
Soroush Ghandiparsi,
Cesar Perez,
Hasina H. Mamtaz,
1 H. Rabiee,
M. Saif Islam
Abstract:
The study proposes to use the photon trap** micro-structures to enhance quantum efficiency of the mid infrared photodetectors. The nanostructure that is consist of micro holes reduces reflection and bends the near normally incident light into the lateral modes in the absorbing layer.
The study proposes to use the photon trap** micro-structures to enhance quantum efficiency of the mid infrared photodetectors. The nanostructure that is consist of micro holes reduces reflection and bends the near normally incident light into the lateral modes in the absorbing layer.
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Submitted 29 August, 2018;
originally announced October 2018.
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Optimization of light trap** micro-hole structure for high-speed high-efficiency silicon photodiodes
Authors:
Ekaterina Ponizovskaya Devine,
Hilal Cansizoglu,
Yang Gao,
S. Ghandiparsi,
Ahmet Kaya,
Hasina H. Mamtaz,
Ahmed S. Mayet,
Toshishige Yamada,
Aly F. Elrefaie,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trap**. Small disorder and cone hole shapes helped achieve uniform quantum efficiency in a wide wavelength range.
We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trap**. Small disorder and cone hole shapes helped achieve uniform quantum efficiency in a wide wavelength range.
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Submitted 29 August, 2018;
originally announced October 2018.
