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Enhancement of valley polarization at high photoexcited densities in MoS2 monolayers
Authors:
Fabian Cadiz,
Stefan Gerl,
Takashi Taniguchi,
Kenji Watanabe
Abstract:
We have investigated the steady-sate valley polarization and valley coherence of encapsulated MoS2 monolayer as a function of the temperature and the power density with a continuous wave laser excitation. Both valley polarization and coherence exhibit a non-monotonic dependence on sample temperature, attaining a local maximum at T=40 K. This has been recently attributed to a motional narrowing eff…
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We have investigated the steady-sate valley polarization and valley coherence of encapsulated MoS2 monolayer as a function of the temperature and the power density with a continuous wave laser excitation. Both valley polarization and coherence exhibit a non-monotonic dependence on sample temperature, attaining a local maximum at T=40 K. This has been recently attributed to a motional narrowing effect: an enhancement of the valley relaxation time occurs when the scattering rate increases. At a fixed temperature of T=6 K, a two-fold increase of the steady-state valley polarization is achieved by increasing the laser excitation power, which we attribute to a local heating induced by the energy relaxation of photoexcited excitons outside the light cone and to an increase in the exciton-exciton scattering rate. In contrast, in the same power range only a moderate enhancement of valley coherence is observed. Further increasing the excitation power leads to a small reduction of valley polarization but a dramatic loss of valley coherence. Supported by spatial imaging of the excitonic luminescence and polarization, we attribute this behaviour to the detrimental role of exciton-exciton interactions on the pure dephasing rate.
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Submitted 29 October, 2021;
originally announced October 2021.
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Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field
Authors:
Fabian Cadiz,
Delphine Lagarde,
Bingshan Tao,
Julien Frougier,
Bo Xu,
Henri Jaffrès,
Zhanguo Wang,
Xiufeng Han,
Jean Marie George,
Hélène Carrere,
Andrea Balocchi,
Thierry Amand,
Xavier Marie,
Bernhard Urbaszek,
Yuan Lu,
Pierre Renucci
Abstract:
Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoF…
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Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoFeB/MgO electrode, presenting perpendicular magnetic anisotropy (PMA). We observe a clear asymmetry of the photocurrent measured under respective right and left polarized light that follows the hysteresis of the magnetic layer. The amplitude of this asymmetry at zero magnetic field decreases with increasing temperatures and can be controlled with the bias. Polarization-resolved photoluminescence is detected in parallel while the device is operated as a photodetector. This demonstrates the multifunctional capabilities of the device and gives valuable insights into the spin relaxation of the electrons in the quantum dots.
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Submitted 23 July, 2020;
originally announced July 2020.
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Enabling valley selective exciton scattering in monolayer WSe$_2$ through upconversion
Authors:
M. Manca,
M. M. Glazov,
C. Robert,
F. Cadiz,
T. Taniguchi,
K. Watanabe,
E. Courtade,
T. Amand,
P. Renucci,
X. Marie,
G. Wang,
B. Urbaszek
Abstract:
Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects.…
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Excitons, Coulomb bound electron-hole pairs, are composite bosons and their interactions in traditional semiconductors lead to condensation and light amplification. The much stronger Coulomb interaction in transition metal dichalcogenides such as WSe$_2$ monolayers combined with the presence of the valley degree of freedom is expected to provide new opportunities for controlling excitonic effects. But so far the bosonic character of exciton scattering processes remains largely unexplored in these two-dimensional (2D) materials. Here we show that scattering between B-excitons and A-excitons preferably happens within the same valley in momentum space. This leads to power dependent, negative polarization of the hot B-exciton emission. We use a selective upconversion technique for efficient generation of B-excitons in the presence of resonantly excited A-excitons at lower energy, we also observe the excited A-excitons state $2s$. Detuning of the continuous wave, low power laser excitation outside the A-exciton resonance (with a full width at half maximum of 4 meV) results in vanishing upconversion signal.
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Submitted 20 January, 2017;
originally announced January 2017.
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Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides
Authors:
Fabian Cadiz,
Cedric Robert,
Gang Wang,
Wilson Kong,
Xi Fan,
Mark Blei,
Delphine Lagarde,
Maxime Gay,
Marco Manca,
Takashi Taniguchi,
Kenji Watanabe,
Thierry Amand,
Xavier Marie,
Pierre Renucci,
Sefaattin Tongay,
Bernhard Urbaszek
Abstract:
The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical…
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The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced do** is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $μ$W/$μ$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy.
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Submitted 30 June, 2016;
originally announced June 2016.
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Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
Authors:
Biswarup Guha,
Felix Marsault,
Fabian Cadiz,
Laurence Morgenroth,
Vladimir Ulin,
Vladimir Berkovitz,
Aristide Lemaître,
Carmen Gomez,
Alberto Amo,
Sylvian Combrié,
Bruno Gérard,
Giuseppe Leo,
Ivan Favero
Abstract:
Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in…
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Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control of miniature gallium arsenide optical resonators, using two distinct techniques that produce permanent results. One leads to extend the lifetime of free-carriers and enhance luminescence, while the other strongly reduces surface absorption originating from mid-gap states and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to six million at telecom wavelength, greatly surpassing previous realizations and opening new prospects for Gallium Arsenide nanophotonics.
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Submitted 2 May, 2016;
originally announced May 2016.
