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A Hermetic On-Cryostat Helium Source for Low Temperature Experiments
Authors:
K. E. Castoria,
H. Byeon,
J. Theis,
N. R. Beysengulov,
E. O. Glen,
G. Koolstra,
M. Sammon,
S. A. Lyon,
J. Pollanen,
D. G. Rees
Abstract:
We describe a helium source cell for use in cryogenic experiments that is hermetically sealed $in$ $situ$ on the cold plate of a cryostat. The source cell is filled with helium gas at room temperature and subsequently sealed using a cold weld crim** tool before the cryostat is closed and cooled down. At low temperature the helium condenses and collects in a connected experimental volume, as moni…
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We describe a helium source cell for use in cryogenic experiments that is hermetically sealed $in$ $situ$ on the cold plate of a cryostat. The source cell is filled with helium gas at room temperature and subsequently sealed using a cold weld crim** tool before the cryostat is closed and cooled down. At low temperature the helium condenses and collects in a connected experimental volume, as monitored via the frequency response of a planar superconducting resonator device sensitive to small amounts of liquid helium. This on-cryostat helium source negates the use of a filling tube between the cryogenic volumes and room temperature, thereby preventing unwanted effects such as such as temperature instabilities that arise from the thermomechanical motion of helium within the system. This helium source can be used in experiments investigating the properties of quantum fluids or to better thermalize quantum devices.
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Submitted 2 November, 2023;
originally announced November 2023.
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Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy
Authors:
Luca Basso,
Pauli Kehayias,
Jacob Henshaw,
Maziar Saleh Ziabari,
Heejun Byeon,
Michael P. Lilly,
Ezra Bussmann,
Deanna M. Campbell,
Shashank Misra,
Andrew M. Mounce
Abstract:
The recently-developed ability to control phosphorous-do** of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include wh…
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The recently-developed ability to control phosphorous-do** of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and map** of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with μm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 μm-wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.
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Submitted 28 July, 2022;
originally announced July 2022.
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Towards Deterministic Creation of Single Photon Sources in Diamond using In-Situ Ion Counting
Authors:
M. Titze,
H. Byeon,
A. R. Flores,
J. Henshaw,
C. T. Harris,
A. M. Mounce,
E. S. Bielejec
Abstract:
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location…
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We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location, referred to as timed implantation in this paper. This process is dominated by Poisson statistics resulting in large errors for low number of implanted ions. Instead, we use in-situ detection to measure the number of ions arriving at the substrate resulting in a two-fold reduction in the error on the number of implanted ions used to generate a single optically active silicon vacancy (SiV) defect in diamond compared to timed implantation. Additionally, through post-implantation analysis, we can further reduce the error resulting in a seven-fold improvement compared to timed implantation, allowing us to better estimate the conversion yield of implanted Si to SiV. We detect SiV emitters by photoluminescence spectroscopy, determine the number of emitters per location and calculate the yield to be 2.98 + 0.21 / - 0.24 %. Candidates for single photon emitters are investigated further by Hanbury-Brown-Twiss interferometry confirming that 82 % of the locations exhibit single photon emission statistics. This counted ion implantation technique paves the way towards deterministic creation of SiV when ion counting is used in combination with methods that improve the activation yield of SiV.
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Submitted 3 December, 2021;
originally announced December 2021.
