-
First results on SiSeRO (Single electron Sensitive Read Out) devices -- a new X-ray detector for scientific instrumentation
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Barry Burke,
Kevan Donlon,
Gregory Prigozhin,
R. Glenn Morris,
Peter Orel,
Michael Cooper,
Andrew Malonis,
Dan Wilkins,
Vyshnavi Suntharalingam,
Steven W. Allen,
Marshall Bautz,
Chris Leitz
Abstract:
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a depleted internal gate beneath the p-MOSFET. Charge transferred to the internal gate modulates the source-drain current of the transistor. We have developed a drain cu…
▽ More
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a depleted internal gate beneath the p-MOSFET. Charge transferred to the internal gate modulates the source-drain current of the transistor. We have developed a drain current readout module to characterize the detector. The prototype sensor achieves a charge/current conversion gain of 700 pA per electron, an equivalent noise charge (ENC) of 15 electrons (e-) root mean square (RMS), and a full width half maximum (FWHM) of 230 eV at 5.9 keV. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the first characterization test results of the SiSeRO prototypes. While at present only a proof-of-concept experiment, in the near future we plan to use next generation sensors with improved noise performance and an enhanced readout module. In particular, we are develo** a readout module enabling Repetitive Non-Destructive Readout (RNDR) of the charge, which can in principle yield sub-electron ENC performance. With these developments, we eventually plan to build a matrix of SiSeRO amplifiers to develop an active pixel sensor with an on-chip ASIC-based readout system. Such a system, with fast readout speeds and sub-electron noise, could be effectively utilized in scientific applications requiring fast and low-noise spectro-imagers.
△ Less
Submitted 9 December, 2021;
originally announced December 2021.
-
Tiny-box: A tool for the versatile development and characterization of low noise fast X-ray imaging detectors
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Steven Allen,
Jack Hirschman,
Glenn Morris,
Marshall Bautz,
Andrew Malonis,
Richard Foster,
Gregory Prigozhin,
Dave Craig,
Barry Burke
Abstract:
X-ray Charge Coupled Devices (CCDs) have been the workhorse for soft X-ray astronomical instruments for the past quarter century. They provide broad energy response, extremely low electronic read noise, and good energy resolution in soft X-rays. These properties, along with the large arrays and small pixel sizes available with modern-day CCDs, make them a potential candidate for next generation as…
▽ More
X-ray Charge Coupled Devices (CCDs) have been the workhorse for soft X-ray astronomical instruments for the past quarter century. They provide broad energy response, extremely low electronic read noise, and good energy resolution in soft X-rays. These properties, along with the large arrays and small pixel sizes available with modern-day CCDs, make them a potential candidate for next generation astronomical X-ray missions equipped with large collecting areas, high angular resolutions and wide fields of view, enabling observation of the faint, diffuse and high redshift X-ray universe. However, such high collecting area (about 30 times Chandra) requires these detectors to have an order of magnitude faster readout than current CCDs to avoid saturation and pile up effects. In this context, Stanford University and MIT have initiated the development of fast readout X-ray cameras. As a tool for this development, we have designed a fast readout, low noise electronics board (intended to work at a 5 Megapixel per second data rate) coupled with an STA Archon controller to readout a 512 x 512 CCD (from MIT Lincoln Laboratory). This versatile setup allows us to study a number of parameters and operation conditions including the option for digital sha**. In this paper, we describe the characterization test stand, the concept and development of the readout electronics, and simulation results. We also report the first measurements of read noise, energy resolution and other parameters from this set up. While this is very much a prototype, we plan to use larger, multi-node CCD devices in the future with dedicated ASIC readout systems to enable faster, parallel readout of the CCDs.
△ Less
Submitted 13 December, 2020;
originally announced December 2020.
-
Investigation of Gd3N@C2n (40 < n < 44) family by Raman and inelastic electron tunneling spectroscopy
Authors:
Brian G. Burke,
Jack Chan,
Keith A. Williams,
Jiechao Ge,
Chunying Shu,
Wujun Fu,
Harry C. Dorn,
James G. Kushmerick,
Alexander A. Puretzky,
David B. Geohegan
Abstract:
The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and universal force field (UFF) calculations. Hindered rotations, shown by both theory and experiment, indicate the formation of a Gd3N-C80 bond which reduces the ideal icosahedral symmetry of the C80 cage. The vibrational mod…
▽ More
The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and universal force field (UFF) calculations. Hindered rotations, shown by both theory and experiment, indicate the formation of a Gd3N-C80 bond which reduces the ideal icosahedral symmetry of the C80 cage. The vibrational modes involving the movement of the encapsulated species are a fingerprint of the interaction between the fullerene cage and the core complex. We present Raman data for the Gd3N@C2n (40 < n < 44) family as well as Y3N@C80, Lu3N@C80, and Y3N@C88 for comparison. Conductance measurements have been performed on Gd3N@C80 and reveal a Kondo effect similar to that observed in C60.
△ Less
Submitted 27 October, 2009;
originally announced October 2009.
-
Raman study of Fano interference in p-type doped silicon
Authors:
Brian G. Burke,
Jack Chan,
Keith A. Williams,
Zili Wu,
Alexander A. Puretzky,
David B. Geohegan
Abstract:
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) int…
▽ More
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) into the ultra-violet (325 nm). The asymmetry in the one-phonon Raman lineshape is attributed to a Fano interference involving the overlap of a continuum of electronic excitations with a discrete phonon state. We identify a transition above and below the one-dimensional critical point (E = 3.4 eV) in the electronic excitation spectrum of silicon. The relationship between the anisotropic silicon band structure and the penetration depth is discussed in the context of possible device applications.
△ Less
Submitted 27 October, 2009;
originally announced October 2009.
