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Imaging nanomechanical vibrations and manipulating parametric mode coupling via scanning microwave microscopy
Authors:
Hao Xu,
Srisaran Venkatachalam,
Toky-Harrison Rabenimanana,
Christophe Boyaval,
Sophie Eliet,
Flavie Braud,
Eddy Collin,
Didier Theron,
Xin Zhou
Abstract:
In this study, we present a novel platform based on scanning microwave microscopy for manipulating and detecting tiny vibrations of nanoelectromechanical resonators using a single metallic tip. The tip is placed on the top of a grounded silicon nitride membrane, acting as a movable top gate of the coupled resonator. We demonstrate its ability to map mechanical modes and investigate mechanical damp…
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In this study, we present a novel platform based on scanning microwave microscopy for manipulating and detecting tiny vibrations of nanoelectromechanical resonators using a single metallic tip. The tip is placed on the top of a grounded silicon nitride membrane, acting as a movable top gate of the coupled resonator. We demonstrate its ability to map mechanical modes and investigate mechanical dam** effects in a capacitive coupling scheme, based on its spatial resolution. We also manipulate the energy transfer coherently between the mode of the scanning tip and the underlying silicon nitride membrane, via parametric coupling. Typical features of optomechanics, such as anti-dam** and electromechanically induced transparency, have been observed. Since the microwave optomechanical technology is fully compatible with quantum electronics and very low temperature conditions, it should provide a powerful tool for studying phonon tunnelling between two spatially separated vibrating elements, which could potentially be applied to quantum sensing.
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Submitted 28 June, 2024;
originally announced July 2024.
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Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing
Authors:
Arun Bhaskar,
Justine Philippe,
Etienne Okada,
Flavie Braud,
Jean-François Robillard,
Cédric Durand,
Frédéric Gianesello,
Daniel Gloria,
Christophe Gaquière,
Emmanuel Dubois
Abstract:
With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits which are able to meet highly challenging RF frontend specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of performance due to substrate coupling is a key problem to address for telecommunication circuits, especially fo…
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With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits which are able to meet highly challenging RF frontend specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of performance due to substrate coupling is a key problem to address for telecommunication circuits, especially for the high throw count switches in RF frontends. In this context, a novel technique for local substrate removal is developed to fabricate membranes of mm-sized RF switch which allows for total etching of silicon handler. RF characterization of membranes reveal a superior linearity performance with lowering of 2nd harmonic by 17.7 dB and improvement in insertion losses by 0.38 dB in comparison with High-Resistivity SOI substrates. This improvement leads to a significant increase in frontend efficiency. These results demonstrate a new route for optimization of circuit performance using post-fabrication substrate processing techniques.
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Submitted 24 August, 2021;
originally announced September 2021.
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Large-area femtosecond laser milling of silicon employing trench analysis
Authors:
Arun Bhaskar,
Justine Philippe,
Flavie Braud,
Etienne Okada,
Vanessa Avramovic,
Jean-François Robillard,
Cédric Durand,
Daniel Gloria,
Christophe Gaquière,
Emmanuel Dubois
Abstract:
A femtosecond laser is a powerful tool for micromachining of silicon. In this work, large-area laser ablation of crystalline silicon is comprehensively studied using a laser source of pulse width 300 fs at two wavelengths of 343 nm and 1030 nm. We develop a unique approach to gain insight into the laser milling process by means of detailed analysis of trenches. Laser scribed trenches and milled ar…
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A femtosecond laser is a powerful tool for micromachining of silicon. In this work, large-area laser ablation of crystalline silicon is comprehensively studied using a laser source of pulse width 300 fs at two wavelengths of 343 nm and 1030 nm. We develop a unique approach to gain insight into the laser milling process by means of detailed analysis of trenches. Laser scribed trenches and milled areas are characterized using optical profilometry to extract dimensional and roughness parameters with accuracy and repeatability. In a first step, multiple measures of the trench including the average depth, the volume of recast material, the average longitudinal profile roughness, the inner trench width and the volume removal rate are studied. This allows for delineation of ablation regimes and associated characteristics allowing to determine the impact of fluence and repetition rate on laser milling. In a second step, additional factors of debris formation and material redeposition that come into play during laser milling are further elucidated. These results are utilized for processing large-area (up to few mm2) with milling depths up to 200 μm to enable the fabrication of cavities with low surface roughness at high removal rates of up to 6.9 μm3 μs-1. Finally, laser processing in combination with XeF2 etching is applied on SOI-CMOS technology in the fabrication of radio-frequency (RF) functions standing on suspended membranes. Performance is considerably improved on different functions like RF switch (23 dB improvement in 2nd harmonic), inductors (near doubling of Q-factor) and LNA (noise figure improvement of 0.1 dB) demonstrating the applicability of milling to radio-frequency applications.
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Submitted 30 August, 2020;
originally announced August 2020.
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Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA
Authors:
Arun Bhaskar,
Justine Philippe,
Vanessa Avramovic,
Flavie Braud,
Jean-François Robillard,
Cédric Durand,
Daniel Gloria,
Christophe Gaquiere,
Emmanuel Dubois
Abstract:
High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the…
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High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the fabrication of locally suspended membranes of inductors with handler silicon completely etched. Such flexible membranes suspended freely on the BOX show up to 92 % improvement in Q factor for single turn inductor. The improvement in Q-factor is reported on large sized inductors due to reduced parallel capacitance which allows enhanced operation of inductors at high frequencies. A compact model extraction methodology has been developed to model inductor membranes. These membranes have been utilized for the improvement of noise performance of LNA working in the 4.9,5.9 GHz range. A 0.1 dB improvement in noise figure has been reported by taking an existing design and suspending the input side inductors of the LNA circuit. The substrate engineering method reported in this work is not only applicable to inductors but also to active circuits, making it a powerful tool for enhancement of RF devices.
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Submitted 20 August, 2020;
originally announced August 2020.
