Showing 1–24 of 24 results for author: Bradac, C

Efficient characterization of blinking quantum emitters from scarce data sets via machine learning

Authors: G. Landry, C. Bradac

Abstract: Single photon emitters are core building blocks of quantum technologies, with established and emerging applications ranging from quantum computing and communication to metrology and sensing. Regardless of their nature, quantum emitters universally display fluorescence intermittency or photoblinking: interaction with the environment can cause the emitters to undergo quantum jumps between on and off… ▽ More Single photon emitters are core building blocks of quantum technologies, with established and emerging applications ranging from quantum computing and communication to metrology and sensing. Regardless of their nature, quantum emitters universally display fluorescence intermittency or photoblinking: interaction with the environment can cause the emitters to undergo quantum jumps between on and off states that correlate with higher and lower photoemission events, respectively. Understanding and quantifying the mechanism and dynamics of photoblinking is important for both fundamental and practical reasons. However, the analysis of blinking time traces is often afflicted by data scarcity. Blinking emitters can photo-bleach and cease to fluoresce over time scales that are too short for their photodynamics to be captured by traditional statistical methods. Here, we demonstrate two approaches based on machine learning that directly address this problem. We present a multi-feature regression algorithm and a genetic algorithm that allow for the extraction of blinking on/off switching rates with >85% accuracy, and with >10x less data and >20x higher precision than traditional methods based on statistical inference. Our algorithms effectively extend the range of surveyable blinking systems and trap** dynamics to those that would otherwise be considered too short-lived to be investigated. They are therefore a powerful tool to help gain a better understanding of the physical mechanism of photoblinking, with practical benefits for applications based on quantum emitters that rely on either mitigating or harnessing the phenomenon. △ Less

Submitted 24 August, 2023; originally announced August 2023.

Ultralow-power cryogenic thermometry based on optical-transition broadening of a two-level system in diamond

Authors: Yongliang Chen, Simon White, Evgeny A. Ekimov, Carlo Bradac, Milos Toth, Igor Aharonovich, Toan Trong Tran

Abstract: Cryogenic temperatures are the prerequisite for many advanced scientific applications and technologies. The accurate determination of temperature in this range and at the submicrometer scale is, however, nontrivial. This is due to the fact that temperature reading in cryogenic conditions can be inaccurate due to optically induced heating. Here, we present an ultralow power, optical thermometry tec… ▽ More Cryogenic temperatures are the prerequisite for many advanced scientific applications and technologies. The accurate determination of temperature in this range and at the submicrometer scale is, however, nontrivial. This is due to the fact that temperature reading in cryogenic conditions can be inaccurate due to optically induced heating. Here, we present an ultralow power, optical thermometry technique that operates at cryogenic temperatures. The technique exploits the temperature dependent linewidth broadening measured by resonant photoluminescence of a two level system, a germanium vacancy color center in a nanodiamond host. The proposed technique achieves a relative sensitivity of 20% 1/K, at 5 K. This is higher than any other all optical nanothermometry method. Additionally, it achieves such sensitivities while employing excitation powers of just a few tens of nanowatts, several orders of magnitude lower than other traditional optical thermometry protocols. To showcase the performance of the method, we demonstrate its ability to accurately read out local differences in temperatures at various target locations of a custom-made microcircuit. Our work is a definite step towards the advancement of nanoscale optical thermometry at cryogenic temperatures. △ Less

Submitted 3 November, 2022; originally announced November 2022.

Real-time ratiometric optical nanoscale thermometry

Authors: Yongliang Chen, Chi Li, Tieshan Yang, Evgeny A. Ekimov, Carlo Bradac, Milos Toth, Igor Aharonovich, Toan Trong Tran

Abstract: All optical nanothermometry has become a powerful, noninvasive tool for measuring nanoscale temperatures in applications ranging from medicine to nanooptics and solid-state nanodevices. The key features of any candidate nanothermometer are sensitivity and resolution. Here, we demonstrate a real time, diamond based nanothermometry technique with sensitivity and resolution much larger than those of… ▽ More All optical nanothermometry has become a powerful, noninvasive tool for measuring nanoscale temperatures in applications ranging from medicine to nanooptics and solid-state nanodevices. The key features of any candidate nanothermometer are sensitivity and resolution. Here, we demonstrate a real time, diamond based nanothermometry technique with sensitivity and resolution much larger than those of any existing all optical method. The distinct performance of our approach stems from two factors. First, temperature sensors nanodiamonds cohosting two Group IV colour centers engineered to emit spectrally separated Stokes and AntiStokes fluorescence signals under excitation by a single laser source. Second, a parallel detection scheme based on filtering optics and high sensitivity photon counters for fast readout. We demonstrate the performance of our method by monitoring temporal changes in the local temperature of a microcircuit and a MoTe2 field effect transistor. Our work lays the foundation for time resolved temperature monitoring and map** of micro, nanoscale devices such as microfluidic channels, nanophotonic circuits, and nanoelectronic devices, as well as complex biological environments such as tissues and cells. △ Less

Submitted 3 December, 2021; originally announced December 2021.

Bottom-Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity-Stabilized Quantum Emitters

Authors: Yongliang Chen, Xiaoxue Xu, Chi Li, Avi Bendavid, Mika T. Westerhausen, Carlo Bradac, Milos Toth, Igor Aharonovich, Toan Trong Tran

Abstract: Fluorescent nanoparticles are widely utilized in a large range of nanoscale imaging and sensing applications. While ultra-small nanoparticles (size <10 nm) are highly desirable, at this size range their photostability can be compromised due to effects such as intensity fluctuation and spectral diffusion caused by interaction with surface states. In this letter, we demonstrate a facile, bottom-up t… ▽ More Fluorescent nanoparticles are widely utilized in a large range of nanoscale imaging and sensing applications. While ultra-small nanoparticles (size <10 nm) are highly desirable, at this size range their photostability can be compromised due to effects such as intensity fluctuation and spectral diffusion caused by interaction with surface states. In this letter, we demonstrate a facile, bottom-up technique for the fabrication of sub-10-nm hBN nanoparticles hosting photostable bright emitters via a catalyst-free hydrothermal reaction between boric acid and melamine. We also implement a simple stabilization protocol that significantly reduces intensity fluctuation by ~85% and narrows the emission linewidth by ~14% by employing a common sol-gel silica coating process. Our study advances a promising strategy for the scalable, bottom-up synthesis of high-quality quantum emitters in hBN nanoparticles. △ Less

Submitted 27 January, 2021; originally announced January 2021.

Photoluminescence and photochemistry of the $V_B^-$ defect in hexagonal boron nitride

Authors: Jeffrey R. Reimers, Jun Shen, Mehran Kianinia, Carlo Bradac, Igor Aharonovich, Michael J. Ford, Piotr Piecuch

Abstract: Extensive photochemical and spectroscopic properties of the $V_B^-$ defect in hexagonal boron nitride are calculated, concluding that the observed photoemission associated with recently observed optically-detected magnetic resonance is most likely of (1)3E" to (1)3A2' origin. Rapid intersystem crossing from the defect's triplet to singlet manifolds explains the observed short excited-state lifetim… ▽ More Extensive photochemical and spectroscopic properties of the $V_B^-$ defect in hexagonal boron nitride are calculated, concluding that the observed photoemission associated with recently observed optically-detected magnetic resonance is most likely of (1)3E" to (1)3A2' origin. Rapid intersystem crossing from the defect's triplet to singlet manifolds explains the observed short excited-state lifetime and very low quantum yield. New experimental results reveal smaller intrinsic spectral bandwidths than previously recognized, interpreted in terms spectral narrowing and zero-phonon-line shifting induced by the Jahn-Teller effect. Different types of computational methods are applied to map out the complex triplet and singlet defect manifolds, including the doubly ionised formulation of the equation-of-motion coupled-cluster theory that is designed to deal with the open-shell nature of defect states, and mixed quantum-mechanics/molecular-mechanics schemes enabling 5763-atom simulations. Two other energetically feasible spectral assignments from amongst the singlet and triplet manifolds are considered, but ruled out based on inappropriate photochemical properties. △ Less

Submitted 29 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. B 102, 144105 (2020)

Engineering spin defects in hexagonal boron nitride

Authors: Mehran Kianinia, Simon White, Johannes E. Fröch, Carlo Bradac, Igor Aharonovich

Abstract: Two-dimensional hexagonal boron nitride offers intriguing opportunities for advanced studies of light-matter interaction at the nanoscale, specifically for realizations in quantum nanophotonics. Here, we demonstrate the engineering of optically-addressable spin defects based on the negatively-charged boron vacancy center. We show that these centers can be created in exfoliated hexagonal boron nitr… ▽ More Two-dimensional hexagonal boron nitride offers intriguing opportunities for advanced studies of light-matter interaction at the nanoscale, specifically for realizations in quantum nanophotonics. Here, we demonstrate the engineering of optically-addressable spin defects based on the negatively-charged boron vacancy center. We show that these centers can be created in exfoliated hexagonal boron nitride using a variety of focused ion beams (nitrogen, xenon and argon), with nanoscale precision. Using a combination of laser and resonant microwave excitation, we carry out optically detected magnetic resonance spectroscopy measurements, which reveal a zero-field ground state splitting for the defect of ~3.46 GHz. We also perform photoluminescence excitation spectroscopy and temperature dependent photoluminescence measurements to elucidate the photophysical properties of the center. Our results are important for advanced quantum and nanophotonics realizations involving manipulation and readout of spin defects in hexagonal boron nitride. △ Less

Submitted 16 April, 2020; originally announced April 2020.

Optical Thermometry with Quantum Emitters in Hexagonal Boron Nitride

Authors: Yongliang Chen, Thinh Ngoc Tran, Ngoc My Hanh Duong, Chi Li, Milos Toth, Carlo Bradac, Igor Aharonovich, Alexander Solntsev, Toan Trong Tran

Abstract: Nanoscale optical thermometry is a promising non-contact route for measuring local temperature with both high sensitivity and spatial resolution. In this work, we present a deterministic optical thermometry technique based on quantum emitters in nanoscale hexagonal boron-nitride. We show that these nanothermometers exhibit better performance than that of homologous, all-optical nanothermometers bo… ▽ More Nanoscale optical thermometry is a promising non-contact route for measuring local temperature with both high sensitivity and spatial resolution. In this work, we present a deterministic optical thermometry technique based on quantum emitters in nanoscale hexagonal boron-nitride. We show that these nanothermometers exhibit better performance than that of homologous, all-optical nanothermometers both in sensitivity and range of working temperature. We demonstrate their effectiveness as nanothermometers by monitoring the local temperature at specific locations in a variety of custom-built micro-circuits. This work opens new avenues for nanoscale temperature measurements and heat flow studies in miniaturized, integrated devices. △ Less

Submitted 8 March, 2020; originally announced March 2020.

Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride

Authors: Noah Mendelson, Dipankar Chugh, Jeffrey R. Reimers, Tin S. Cheng, Andreas Gottscholl, Hu Long, Christopher J. Mellor, Alex Zettl, Vladimir Dyakonov, Peter H. Beton, Sergei V. Novikov, Chennupati Jagadish, Hark Hoe Tan, Michael J. Ford, Milos Toth, Carlo Bradac, Igor Aharonovich

Abstract: Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by… ▽ More Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices. △ Less

Submitted 20 April, 2020; v1 submitted 2 March, 2020; originally announced March 2020.

Versatile Direct Writing of Dopants in a Solid State Host Through Recoil Implantation

Authors: Johannes E. Fröch, Alan Bahm, Mehran Kianinia, Mu Zhao, Vijay Bhatia, Sejeong Kim, Julie M. Cairney, Weibo Gao, Carlo Bradac, Igor Aharonovich, Milos Toth

Abstract: Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establis… ▽ More Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establish a universal method for material do** by exploiting one of the most fundamental principles of physics - momentum transfer. As a proof of concept, we direct-write arrays of emitters into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We conclusively show that the technique, which we term knock-on do**, can yield ultra-shallow dopant profiles localized to the top 5 nm of the target surface, and use it to achieve sub-50 nm lateral resolution. The knock-on do** method is cost-effective, yet very versatile, powerful and universally suitable for applications such as electronic and magnetic do** of atomically thin materials and engineering of near-surface states of semiconductor devices. △ Less

Submitted 8 October, 2020; v1 submitted 20 January, 2020; originally announced January 2020.

Near-field energy transfer between a luminescent 2D material and color centers in diamond

Authors: Richard Nelz, Mariusz Radtke, Abdallah Slablab, Mehran Kianinia, Chi Li, Zai-Quan Xu, Carlo Bradac, Igor Aharonovich, Elke Neu

Abstract: Energy transfer between fluorescent probes lies at the heart of many applications ranging from bio-sensing and -imaging to enhanced photo-detection and light harvesting. In this work, we study Förster resonance energy transfer (FRET) between shallow defects in diamond --- nitrogen-vacancy (NV) centers --- and atomically-thin, two-dimensional materials --- tungsten diselenide (WSe$_2$). By means of… ▽ More Energy transfer between fluorescent probes lies at the heart of many applications ranging from bio-sensing and -imaging to enhanced photo-detection and light harvesting. In this work, we study Förster resonance energy transfer (FRET) between shallow defects in diamond --- nitrogen-vacancy (NV) centers --- and atomically-thin, two-dimensional materials --- tungsten diselenide (WSe$_2$). By means of fluorescence lifetime imaging, we demonstrate the occurrence of FRET in the WSe$_2$/NV system. Further, we show that in the coupled system, NV centers provide an additional excitation pathway for WSe$_2$ photoluminescence. Our results constitute the first step towards the realization of hybrid quantum systems involving single-crystal diamond and two-dimensional materials that may lead to new strategies for studying and controlling spin transfer phenomena and spin valley physics. △ Less

Submitted 24 October, 2019; v1 submitted 29 July, 2019; originally announced July 2019.

Comments: v2: accepted for publication in Advanced Quantum Technologies

Integrated on chip platform with quantum emitters in layered materials

Authors: Sejeong Kim, Ngoc My Hanh Duong, Minh Nguyen, Tsung-Ju Lu, Mehran Kianinia, Noah Mendelson, Alexander Solntsev, Carlo Bradac, Dirk R. Englund, Igor Aharonovich

Abstract: Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort has been devoted to engineering on-chip systems from three-dimensional crystals such as diamond or gallium arsenide. In this study, we demonstrate room temperature coupling of quantum emitters embedded within a layered hexag… ▽ More Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort has been devoted to engineering on-chip systems from three-dimensional crystals such as diamond or gallium arsenide. In this study, we demonstrate room temperature coupling of quantum emitters embedded within a layered hexagonal boron nitride to an on-chip aluminium nitride waveguide. We achieved 1.2% light coupling efficiency of the device and realise transmission of single photons through the waveguide. Our results serve as a foundation for the integration of layered materials with on-chip components and for the realisation of integrated quantum photonic circuitry. △ Less

Submitted 10 July, 2019; originally announced July 2019.

Quantum Nanophotonics with Group IV defects in Diamond

Authors: Carlo Bradac, Weibo Gao, Jacopo Forneris, Matt Trusheim, Igor Aharonovich

Abstract: Diamond photonics is an ever growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field been shaped by the nitrogen-vacancy (NV) centre both with breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other… ▽ More Diamond photonics is an ever growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field been shaped by the nitrogen-vacancy (NV) centre both with breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged. They are M V colour centres, where M indicates one of the elements in the IV column of the periodic table Si, Ge, Sn and Pb, and V indicates lattice vacancies, i.e. missing next-neighbour carbon atoms. These centres exhibit a much stronger emission into the zero phonon line then the NV centre, they display inversion symmetry, and can be engineered using ion implantation all attractive features for scalable quantum photonic architectures based on solid-state, single-photon sources. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art of group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond. △ Less

Submitted 4 July, 2019; v1 submitted 26 June, 2019; originally announced June 2019.

Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal

Authors: Andreas Gottscholl, Mehran Kianinia, Victor Soltamov, Carlo Bradac, Christian Kasper, Klaus Krambrock, Andreas Sperlich, Milos Toth, Igor Aharonovich, Vladimir Dyakonov

Abstract: Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically thin 2D materials has remained elusive. Although optically accessible spin state… ▽ More Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically thin 2D materials has remained elusive. Although optically accessible spin states in hBN are theoretically predicted, they have not yet been observed experimentally. Here, employing rigorous electron paramagnetic resonance techniques and photoluminescence spectroscopy, we identify fluorescence lines in hexagonal boron nitride associated with a particular defect, the negatively charged boron vacancy and determine the parameters of its spin Hamiltonian. We show that the defect has a triplet ground state with a zero field splitting of 3.5 GHz and establish that the centre exhibits optically detected magnetic resonance at room temperature. We also demonstrate the spin polarization of this centre under optical pum**, which leads to optically induced population inversion of the spin ground state a prerequisite for coherent spin manipulation schemes. Our results constitute a leap forward in establishing two dimensional hBN as a prime platform for scalable quantum technologies, with extended potential for spin based quantum information and sensing applications, as our ODMR studies on hBN NV diamonds hybrid structures show. △ Less

Submitted 9 June, 2019; originally announced June 2019.

Journal ref: Nature Materials (2020)

Suppression of Spectral Diffusion by Anti-Stokes Excitation of Quantum Emitters in Hexagonal Boron Nitride

Authors: Toan Trong Tran, Carlo Bradac, Alexander S. Solntsev, Milos Toth, Igor Aharonovich

Abstract: Solid-state quantum emitters are garnering a lot of attention due to their role in scalable quantum photonics. A notable majority of these emitters, however, exhibit spectral diffusion due to local, fluctuating electromagnetic fields. In this work, we demonstrate efficient Anti-Stokes (AS) excitation of quantum emitters in hexagonal boron nitride (hBN), and show that the process results in the sup… ▽ More Solid-state quantum emitters are garnering a lot of attention due to their role in scalable quantum photonics. A notable majority of these emitters, however, exhibit spectral diffusion due to local, fluctuating electromagnetic fields. In this work, we demonstrate efficient Anti-Stokes (AS) excitation of quantum emitters in hexagonal boron nitride (hBN), and show that the process results in the suppression of a specific mechanism responsible for spectral diffusion of the emitters. We also demonstrate an all-optical gating scheme that exploits Stokes and Anti-Stokes excitation to manipulate spectral diffusion so as to switch and lock the emission energy of the photon source. In this scheme, reversible spectral jumps are deliberately enabled by pum** the emitter with high energy (Stokes) excitation; AS excitation is then used to lock the system into a fixed state characterized by a fixed emission energy. Our results provide important insights into the photophysical properties of quantum emitters in hBN, and introduce a new strategy for controlling the emission wavelength of quantum emitters. △ Less

Submitted 10 February, 2019; originally announced February 2019.

Effects of microstructure and growth conditions on quantum emitters in Gallium Nitride

Authors: Minh Nguyen, Tongtong Zhu, Mehran Kianinia, Fabien Massabuau, Igor Aharonovich, Milos Toth, Rachel Oliver, Carlo Bradac

Abstract: Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host material, as well as its remarkable chemical stability and optoelectronic properties. We investigate the nature of such single-photon emitters in GaN with a systematic analysis of various samples produced under differen… ▽ More Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host material, as well as its remarkable chemical stability and optoelectronic properties. We investigate the nature of such single-photon emitters in GaN with a systematic analysis of various samples produced under different growth conditions. We explore the effect that intrinsic structural defects (dislocations and stacking faults), do** and crystal orientation in GaN have on the formation of quantum emitters. We investigate the relationship between the position of the emitters (determined via spectroscopy and photoluminescence measurements) and the location of threading dislocations (characterised both via atomic force microscopy and cathodoluminescence). We find that quantum emitters do not correlate with stacking faults or dislocations; instead, they are more likely to originate from point defects or impurities whose density is modulated by the local extended defect density. △ Less

Submitted 28 November, 2018; originally announced November 2018.

Anti-Stokes excitation of solid-state quantum emitters for nanoscale thermometry

Authors: Toan Trong Tran, Blake Regan, Evgeny A. Ekimov, Zhao Mu, Zhou Yu, Weibo Gao, Prineha Narang, Alexander S. Solntsev, Milos Toth, Igor Aharonovich, Carlo Bradac

Abstract: Color centers in solids are the fundamental constituents of a plethora of applications such as lasers, light emitting diodes and sensors, as well as the foundation of advanced quantum information and communication technologies. Their photoluminescence properties are usually studied under Stokes excitation, in which the emitted photons are at a lower energy than the excitation ones. In this work, w… ▽ More Color centers in solids are the fundamental constituents of a plethora of applications such as lasers, light emitting diodes and sensors, as well as the foundation of advanced quantum information and communication technologies. Their photoluminescence properties are usually studied under Stokes excitation, in which the emitted photons are at a lower energy than the excitation ones. In this work, we explore the opposite Anti-Stokes process, where excitation is performed with lower energy photons. We report that the process is sufficiently efficient to excite even a single quantum system, namely the germanium-vacancy center in diamond. Consequently, we leverage the temperature-dependent, phonon-assisted mechanism to realize an all-optical nanoscale thermometry scheme that outperforms any homologous optical method employed to date. Our results frame a promising approach for exploring fundamental light-matter interactions in isolated quantum systems, and harness it towards the realization of practical nanoscale thermometry and sensing. △ Less

Submitted 11 October, 2018; originally announced October 2018.

Enhanced Emission from WSe2 Monolayers Coupled to Circular Bragg Gratings

Authors: Ngoc My Hanh Duong, Zai-Quan Xu, Mehran Kianinia, Rongbin Su, Zhuojun Liu, Sejeong Kim, Carlo Bradac, Lain-Jong Li, Alexander Solntsev, ** Liu, Igor Aharonovich

Abstract: Two-dimensional transition-metal dichalcogenides (TMDC) are of great interest for on-chip nanophotonics due to their unique optoelectronic properties. Here, we propose and realize coupling of tungsten diselenide (WSe2) monolayers to circular Bragg grating structures to achieve enhanced emission. The interaction between WSe2 and the resonant mode of the structure results in Purcell-enhanced emissio… ▽ More Two-dimensional transition-metal dichalcogenides (TMDC) are of great interest for on-chip nanophotonics due to their unique optoelectronic properties. Here, we propose and realize coupling of tungsten diselenide (WSe2) monolayers to circular Bragg grating structures to achieve enhanced emission. The interaction between WSe2 and the resonant mode of the structure results in Purcell-enhanced emission, while the symmetric geometrical structure improves the directionality of the out-coupling stream of emitted photons. Furthermore, this hybrid structure produces a record high contrast of the spin valley readout (> 40%) revealed by the polarization resolved photoluminescence (PL) measurements. Our results are promising for on-chip integration of TMDC monolayers with optical resonators for nanophotonic circuits. △ Less

Submitted 18 June, 2018; originally announced June 2018.

Bottom up engineering of near-identical quantum emitters in atomically thin materials

Authors: Noah Mendelson, Zai-Quan Xu, Toan Trong Tran, Mehran Kianinia, Carlo Bradac, John Scott, Minh Nguyen, James Bishop, Johannes Froch, Blake Regan, Igor Aharonovich, Milos Toth

Abstract: Quantum technologies require robust and photostable single photon emitters (SPEs) that can be reliably engineered. Hexagonal boron nitride (hBN) has recently emerged as a promising candidate host to bright and optically stable SPEs operating at room temperature. However, the emission wavelength of the fluorescent defects in hBN has, to date, been shown to be uncontrolled. The emitters usually disp… ▽ More Quantum technologies require robust and photostable single photon emitters (SPEs) that can be reliably engineered. Hexagonal boron nitride (hBN) has recently emerged as a promising candidate host to bright and optically stable SPEs operating at room temperature. However, the emission wavelength of the fluorescent defects in hBN has, to date, been shown to be uncontrolled. The emitters usually display a large spread of zero phonon line (ZPL) energies spanning over a broad spectral range (hundreds of nanometers), which hinders the potential development of hBN-based devices and applications. We demonstrate bottom-up, chemical vapor deposition growth of large-area, few layer hBN that hosts large quantities of SPEs: 100 per 10x10 μm2. Remarkably, more than 85 percent of the emitters have a ZPL at (580{\pm}10)nm, a distribution which is over an order of magnitude narrower than previously reported. Exploiting the high density and uniformity of the emitters, we demonstrate electrical modulation and tuning of the ZPL emission wavelength by up to 15 nm. Our results constitute a definite advancement towards the practical deployment of hBN single photon emitters in scalable quantum photonic and hybrid optoelectronic devices based on 2D materials. △ Less

Submitted 4 June, 2018; originally announced June 2018.

Super-resolution imaging of quantum emitters in layered materials

Authors: Mehran Kianinia, Carlo Bradac, Fan Wang, Bernd Sontheimer, Toan Trong Tran, Minh Nguyen, Sejeong Kim, Zai-Quan Xu, Dayong **, Andreas W. Schell, Charlene J. Lobo, Igor Aharonovich, Milos Toth

Abstract: Layered van der Waals materials are emerging as compelling two-dimensional (2D) platforms for studies of nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Amongst these, hexagonal boron nitride (hBN) is unique in that it hosts ultra-bright, room temperature single photon emitters (SPE… ▽ More Layered van der Waals materials are emerging as compelling two-dimensional (2D) platforms for studies of nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Amongst these, hexagonal boron nitride (hBN) is unique in that it hosts ultra-bright, room temperature single photon emitters (SPEs). However, an outstanding challenge is to locate SPEs in hBN with high precision, a task which requires breaking the optical diffraction limit. Here, we report the imaging of SPEs in layered hBN with a spatial resolution of 63 nm using ground state depletion (GSD) nanoscopy. Furthermore, we show that SPEs in hBN possess nonlinear photophysical properties which can be used to realize a new variant of GSD that employs a coincident pair of doughnut-shaped lasers to reduce the laser power that is needed to achieve a given resolution target. Our findings expand the current understanding of the photophysics of quantum emitters in layered hBN and demonstrate the potential for advanced nanophotonic and bio-imaging applications which require localization of individual emitters with super-resolution accuracy. △ Less

Submitted 21 September, 2017; originally announced September 2017.

Photophysics of GaN single photon sources in the visible spectral range

Authors: Amanuel M. Berhane, Kwang-Yong Jeong, Carlo Bradac, Michael Walsh, Dirk Englund, Milos Toth, Igor Aharonovich

Abstract: In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited widths expected from excited state lifetime measurements. The broadening is ascribed to u… ▽ More In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited widths expected from excited state lifetime measurements. The broadening is ascribed to ultra-fast spectral diffusion. Continuing the photophysics study on several emitters at room temperature (RT), a maximum average brightness of ~427 kCounts/s is measured. Furthermore, by determining the decay rates of emitters undergoing three-level optical transitions, radiative and non-radiative lifetimes are calculated at RT. Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPE in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies. △ Less

Submitted 30 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 97, 165202 (2018)

Photo-induced blinking in a solid state quantum system

Authors: Amanuel M. Berhane, Carlo Bradac, Igor Aharonovich

Abstract: Solid state single photon emitters (SPEs) are one of the prime components of many quantum nanophotonics devices. In this work, we report on an unusual, photo-induced blinking phenomenon of SPEs in gallium nitride (GaN). This is shown to be due to the modification in the transition kinetics of the emitter, via the introduction of additional laser-activated states. We investigate and characterize th… ▽ More Solid state single photon emitters (SPEs) are one of the prime components of many quantum nanophotonics devices. In this work, we report on an unusual, photo-induced blinking phenomenon of SPEs in gallium nitride (GaN). This is shown to be due to the modification in the transition kinetics of the emitter, via the introduction of additional laser-activated states. We investigate and characterize the blinking effect on the brightness of the source and the statistics of the emitted photons. Combining second-order correlation and fluorescence trajectory measurements, we determine the photo-dynamics of the trap states and characterize power dependent decay rates and characteristic off-time blinking. Our work sheds new light into understanding solid-state quantum system dynamics and, specifically, power-induced blinking phenomena in SPEs. △ Less

Submitted 13 July, 2017; originally announced July 2017.

Comments: Final version appeared in Phys. Rev. B 96, 041203(R) (2017)

Journal ref: Phys. Rev. B 96, 041203(R) (2017)

Nanodiamonds with photostable, sub-gigahertz linewidths quantum emitters

Authors: Toan Trong Tran, Mehran Kianinia, Kerem Bray, Sejeong Kim, Zai-Quan Xu, Angus Gentle, Bernd Sontheimer, Carlo Bradac, Igor Aharonovich

Abstract: Single photon emitters with narrow linewidths are highly sought after for applications in quantum information processing and quantum communications. In this letter, we report on a bright, highly polarized near infrared single photon emitter embedded in diamond nanocrystals with a narrow, sub GHz optical linewidths at 10K. The observed zero phonon line at ~ 780 nm is optically stable under low powe… ▽ More Single photon emitters with narrow linewidths are highly sought after for applications in quantum information processing and quantum communications. In this letter, we report on a bright, highly polarized near infrared single photon emitter embedded in diamond nanocrystals with a narrow, sub GHz optical linewidths at 10K. The observed zero phonon line at ~ 780 nm is optically stable under low power resonant excitation and blue shifts as the excitation power increases. Our results highlight the prospect for using new near infrared color centers in nanodiamonds for quantum applications. △ Less

Submitted 12 June, 2017; v1 submitted 18 May, 2017; originally announced May 2017.

Observation of cooperatively enhanced atomic dipole forces from NV centers in optically trapped nanodiamonds

Authors: M. L. Juan, C. Bradac, B. Besga, G. Brennen, G. Molina-Terriza, T. Volz

Abstract: Since the early work by Ashkin in 1970, optical trap** has become one of the most powerful tools for manipulating small particles, such as micron sized beads or single atoms. The optical trap** mechanism is based on the interaction energy of a dipole and the electric field of the laser light. In atom trap**, the dominant contribution typically comes from the allowed optical transition closes… ▽ More Since the early work by Ashkin in 1970, optical trap** has become one of the most powerful tools for manipulating small particles, such as micron sized beads or single atoms. The optical trap** mechanism is based on the interaction energy of a dipole and the electric field of the laser light. In atom trap**, the dominant contribution typically comes from the allowed optical transition closest to the laser wavelength, whereas for mesoscopic particles it is given by the bulk polarizability of the material. These two different regimes of optical trap** have coexisted for decades without any direct link, resulting in two very different contexts of applications: one being the trap** of small objects mainly in biological settings, the other one being dipole traps for individual neutral atoms in the field of quantum optics. Here we show that for nanoscale diamond crystals containing artificial atoms, so-called nitrogen vacancy (NV) color centers, both regimes of optical trap** can be observed at the same time even in a noisy liquid environment. For wavelengths in the vicinity of the zero-phonon line transition of the color centers, we observe a significant modification ($10\%$) of the overall trap** strength. Most remarkably, our experimental findings suggest that owing to the large number of artificial atoms, collective effects greatly contribute to the observed trap** strength modification. Our approach adds the powerful atomic-physics toolbox to the field of nano-manipulation. △ Less

Submitted 15 November, 2015; originally announced November 2015.

Comments: 27 pages (including supplementary material), 3+2 figures

Enhanced spontaneous emission from nanodiamond colour centres on opal photonic crystal

Authors: Faraz A Inam, Torsten Gaebel, Carlo Bradac, Luke Stewart, Michael J Withford, Judith M Dawes, James R Rabeau, Michael J Steel

Abstract: Colour centres in diamond are promising candidates as a platform for quantum technologies and biomedical imaging based on spins and/or photons. Controlling the emission properties of colour centres in diamond is a key requirement for develo** efficient single photon sources with high collection efficiency. A number of groups have produced enhancement in the emission rate over narrow wavelength r… ▽ More Colour centres in diamond are promising candidates as a platform for quantum technologies and biomedical imaging based on spins and/or photons. Controlling the emission properties of colour centres in diamond is a key requirement for develo** efficient single photon sources with high collection efficiency. A number of groups have produced enhancement in the emission rate over narrow wavelength ranges by coupling single emitters in nanodiamond crystals to resonant electromagnetic structures. Here we characterise in detail the spontaneous emission rates of nitrogen-vacancy centres positioned in various locations on a structured substrate. We show an average factor of 1.5 enhancement of the total emission rate when nanodiamonds are on an opal photonic crystal surface, and observe changes in the lifetime distribution. We present a model to explain these observations and associate the lifetime properties with dipole orientation and polarization effects. △ Less

Submitted 1 February, 2011; v1 submitted 31 January, 2011; originally announced February 2011.

Comments: 16 pages, 10 figures

Journal ref: New J. Phys. 13 073012 (2011)