Showing 1–50 of 77 results for author: Bowers, J

Broadband Entangled-Photon Pair Generation with Integrated Photonics: Guidelines and A Materials Comparison

Authors: Liao Duan, Trevor J. Steiner, Paolo Pintus, Lillian Thiel, Joshua E. Castro, John E. Bowers, Galan Moody

Abstract: Correlated photon-pair sources are key components for quantum computing, networking, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate entanglement with sub-100 microwatt power at telecom wavelengths. Many quantum systems operate in the visible or near-infrared ranges, necessitating broadband visible-telecom entangled-pair… ▽ More Correlated photon-pair sources are key components for quantum computing, networking, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate entanglement with sub-100 microwatt power at telecom wavelengths. Many quantum systems operate in the visible or near-infrared ranges, necessitating broadband visible-telecom entangled-pair sources for connecting remote systems via entanglement swap** and teleportation. This study evaluates broadband entanglement generation through spontaneous four-wave mixing in various nonlinear integrated photonic materials, including silicon nitride, lithium niobate, aluminum gallium arsenide, indium gallium phosphide, and gallium nitride. We demonstrate how geometric dispersion engineering facilitates phase-matching for each platform and reveals unexpected results, such as robust designs to fabrication variations and a Type-1 cross-polarized phase-matching condition for III-V materials that expands the operational bandwidth. With experimentally attainable parameters, integrated photonic microresonators with optimized designs can achieve pair generation rates greater than ~1 THz/mW$^2$. △ Less

Submitted 5 July, 2024; originally announced July 2024.

Wafer-Scale Fabrication of InGaP-on-Insulator for Nonlinear and Quantum Photonic Applications

Authors: Lillian Thiel, Joshua E. Castro, Trevor J. Steiner, Catherine L. Nguyen, Audrey Pechilis, Liao Duan, Nicholas Lewis, Garrett D. Cole, John E. Bowers, Galan Moody

Abstract: The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a novel nonlinear platform -- InGaP-on-insulator -- optimized for visible-to-telecommunication wavelength $χ^{\left(2\right)}$ nonlinear optical processes. In… ▽ More The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a novel nonlinear platform -- InGaP-on-insulator -- optimized for visible-to-telecommunication wavelength $χ^{\left(2\right)}$ nonlinear optical processes. In this work, we detail our 100-mm wafer-scale InGaP-on-insulator fabrication process realized via wafer bonding, optical lithography, and dry-etching techniques. The resulting wafers yield 1000s of components in each fabrication cycle, with initial designs that include chip-to-fiber couplers, 12.5-cm-long nested spiral waveguides, and arrays of microring resonators with free-spectral ranges spanning 400-900 GHz. We demonstrate intrinsic resonator quality factors as high as 324,000 (440,000) for single-resonance (split-resonance) modes near 1550 nm corresponding to 1.56 dB cm$^{-1}$ (1.22 dB cm$^{-1}$) propagation loss. We analyze the loss versus waveguide width and resonator radius to establish the operating regime for optimal 775-to-1550 nm phase matching. By combining the high $χ^{\left(2\right)}$ and $χ^{\left(3\right)}$ optical nonlinearity of InGaP with wafer-scale fabrication and low propagation loss, these results open promising possibilities for entangled-photon, multi-photon, and squeezed light generation. △ Less

Submitted 26 June, 2024; originally announced June 2024.

Investigation of Q degradation in low-loss Si3N4 from heterogeneous laser integration

Authors: Joel Guo, Chao Xiang, Warren **, Jonathan Peters, Mingxiao Li, Theodore Morin, Yu Xia, John E. Bowers

Abstract: High-performance, high-volume-manufacturing Si3N4 photonics requires extremely low waveguide losses augmented with heterogeneously integrated lasers for applications beyond traditional markets of high-capacity interconnects. State-of-the-art quality factors (Q) over 200 million at 1550 nm have been shown previously; however, maintaining high Qs throughout laser fabrication has not been shown. Here… ▽ More High-performance, high-volume-manufacturing Si3N4 photonics requires extremely low waveguide losses augmented with heterogeneously integrated lasers for applications beyond traditional markets of high-capacity interconnects. State-of-the-art quality factors (Q) over 200 million at 1550 nm have been shown previously; however, maintaining high Qs throughout laser fabrication has not been shown. Here, Si3N4 resonator intrinsic Qs over 100 million are demonstrated on a fully integrated heterogeneous laser platform. Qi is measured throughout laser processing steps, showing degradation down to 50 million from dry etching, metal evaporation, and ion implant steps, and controllable recovery to over 100 million from annealing at 250C - 350C. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Photonic Millimeter-wave Generation Beyond the Cavity Thermal Limit

Authors: William Groman, Igor Kudelin, Alexander Lind, Dahyeon Lee, Takuma Nakamura, Yifan Liu, Megan L. Kelleher, Charles A. McLemore, Joel Guo, Lue Wu, Warren **, John E. Bowers, Franklyn Quinlan, Scott A. Diddams

Abstract: Next-generation communications, radar and navigation systems will extend and exploit the higher bandwidth of the millimeter-wave domain for increased communication data rates as well as radar with higher sensitivity and increased spatial resolution. However, realizing these advantages will require the generation of millimeter-wave signals with low phase noise in simple and compact form-factors. Th… ▽ More Next-generation communications, radar and navigation systems will extend and exploit the higher bandwidth of the millimeter-wave domain for increased communication data rates as well as radar with higher sensitivity and increased spatial resolution. However, realizing these advantages will require the generation of millimeter-wave signals with low phase noise in simple and compact form-factors. The rapidly develo** field of photonic integration addresses this challenge and provides a path toward simplified and portable, low-noise mm-wave generation for these applications. We leverage these advances by heterodyning two silicon photonic chip lasers, phase-locked to the same miniature Fabry-Perot (F-P) cavity to demonstrate a simple framework for generating low-noise millimeter-waves with phase noise below the thermal limit of the F-P cavity. Specifically, we generate 94.5 GHz and 118.1 GHz millimeter-wave signals with phase noise of -117 dBc/Hz at 10 kHz offset, decreasing to -120 dBc/Hz at 40 kHz offset, a record low value for such photonic devices. We achieve this with existing technologies that can be integrated into a platform less than $\approx$ 10 mL in volume. Our work illustrates the significant potential and advantages of low size, weight, and power (SWaP) photonic-sourced mm-waves for communications and sensing. △ Less

Submitted 6 May, 2024; originally announced May 2024.

Comments: 5 pages, 4 figures

Unified laser stabilization and isolation on a silicon chip

Authors: Alexander D. White, Geun Ho Ahn, Richard Luhtaru, Joel Guo, Theodore J. Morin, Abhi Saxena, Lin Chang, Arka Majumdar, Kasper Van Gasse, John E. Bowers, Jelena Vučković

Abstract: Rapid progress in photonics has led to an explosion of integrated devices that promise to deliver the same performance as table-top technology at the nanoscale; heralding the next generation of optical communications, sensing and metrology, and quantum technologies. However, the challenge of co-integrating the multiple components of high-performance laser systems has left application of these nano… ▽ More Rapid progress in photonics has led to an explosion of integrated devices that promise to deliver the same performance as table-top technology at the nanoscale; heralding the next generation of optical communications, sensing and metrology, and quantum technologies. However, the challenge of co-integrating the multiple components of high-performance laser systems has left application of these nanoscale devices thwarted by bulky laser sources that are orders of magnitude larger than the devices themselves. Here we show that the two main ingredients for high-performance lasers -- noise reduction and isolation -- currently requiring serial combination of incompatible technologies, can be sourced simultaneously from a single, passive, CMOS-compatible nanophotonic device. To do this, we take advantage of both the long photon lifetime and the nonreciprocal Kerr nonlinearity of a high quality factor silicon nitride ring resonator to self-injection lock a semiconductor laser chip while also providing isolation. Additionally, we identify a previously unappreciated power regime limitation of current on-chip laser architectures which our system overcomes. Using our device, which we term a unified laser stabilizer, we demonstrate an on-chip integrated laser system with built-in isolation and noise reduction that operates with turnkey reliability. This approach departs from efforts to directly miniaturize and integrate traditional laser system components and serves to bridge the gap to fully integrated optical technologies. △ Less

Submitted 24 May, 2024; v1 submitted 3 April, 2024; originally announced April 2024.

Dispersive-wave-agile optical frequency division

Authors: Qing-Xin Ji, Wei Zhang, Peng Liu, Warren **, Joel Guo, Jonathan Peters, Lue Wu, Avi Feshali, Mario Paniccia, Vladimir Ilchenko, John Bowers, Andrey Matsko, Kerry Vahala

Abstract: The remarkable frequency stability of resonant systems in the optical domain (optical cavities and atomic transitions) can be harnessed at frequency scales accessible by electronics using optical frequency division. This capability is revolutionizing technologies spanning time kee** to high-performance electrical signal sources. A version of the technique called 2-point optical frequency divisio… ▽ More The remarkable frequency stability of resonant systems in the optical domain (optical cavities and atomic transitions) can be harnessed at frequency scales accessible by electronics using optical frequency division. This capability is revolutionizing technologies spanning time kee** to high-performance electrical signal sources. A version of the technique called 2-point optical frequency division (2P-OFD) is proving advantageous for application to high-performance signal sources. In 2P-OFD, an optical cavity anchors two spectral endpoints defined by lines of a frequency comb. The comb need not be self-referenced, which greatly simplifies the system architecture and reduces power requirements. Here, a 2P-OFD microwave signal source is demonstrated with record-low phase noise using a microcomb. Key to this advance is a spectral endpoint defined by a frequency agile single-mode dispersive wave that is emitted by the microcomb soliton. Moreover, the system frequency reference is a compact all-solid-state optical cavity with a record Q-factor. The results advance integrable microcomb-based signal sources into the performance realm of much larger microwave sources. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Turnkey locking of quantum-dot lasers directly grown on Si

Authors: Bozhang Dong, Yating Wan, Weng W. Chow, Chen Shang, Artem Prokoshin, Rosalyn Koscica, Heming Wang, John E. Bowers

Abstract: Ultra-low-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes, and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce system size, weight, power consumption, and cost (SWaP-C). Semiconductor lasers based on self-injection locking (SIL)… ▽ More Ultra-low-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes, and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce system size, weight, power consumption, and cost (SWaP-C). Semiconductor lasers based on self-injection locking (SIL) have reached fiber laser coherence, but typically require a high-Q external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking (ECL) are a low-cost and turnkey operation option, but their coherence is generally inferior to SIL lasers. In this work, we demonstrate quantum-dot (QD) lasers grown directly on Si that achieve SIL laser coherence under turnkey ECL. The high-performance QD laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the QD laser's chaos-free nature enables a 16 Hz Lorentzian linewidth under ECL using a low-Q external cavity, and improves the frequency noise by an additional order of magnitude compared to conventional quantum-well lasers. △ Less

Submitted 3 January, 2024; originally announced January 2024.

High-coherence parallelization in integrated photonics

Authors: Xuguang Zhang, Zixuan Zhou, Yijun Guo, Minxue Zhuang, Warren **, Bitao Shen, Yujun Chen, Jiahui Huang, Zihan Tao, Ming **, Ruixuan Chen, Zhangfeng Ge, Zhou Fang, Ning Zhang, Yadong Liu, Pengfei Cai, Weiwei Hu, Haowen Shu, Dong Pan, John E. Bowers, Xingjun Wang, Lin Chang

Abstract: Coherent optics has profoundly impacted diverse applications ranging from communications, LiDAR to quantum computations. However, building coherent systems in integrated photonics previously came at great expense in hardware integration and energy efficiency: the lack of a power-efficient way to generate highly coherent light necessitates bulky lasers and amplifiers, while frequency and phase reco… ▽ More Coherent optics has profoundly impacted diverse applications ranging from communications, LiDAR to quantum computations. However, building coherent systems in integrated photonics previously came at great expense in hardware integration and energy efficiency: the lack of a power-efficient way to generate highly coherent light necessitates bulky lasers and amplifiers, while frequency and phase recovery schemes require huge digital signal processing resources. In this work, we demonstrate a high-coherence parallelization strategy that facilitates advanced integrated coherent systems at a minimum price. Using a self-injection locked microcomb to injection lock a distributed feedback laser array, we boost the microcomb power by a record high gain of up to 60 dB on chip with no degradation in coherence. This strategy enables tens of highly coherent channels with an intrinsic linewidth down to the 10 Hz level and power of more than 20 dBm. The overall electrical to optical wall-plug efficiency reaches 19%, comparable with that of the state-of-the-art semiconductor lasers. Driven by this parallel source, we demonstrate a silicon photonic communication link with an unprecedented data rate beyond 60 Tbit/s. Importantly, the high coherence we achieve reduces the coherent-related DSP consumption by 99.999% compared with the traditional III-V laser pump scheme. This work paves a way to realizing scalable, high-performance coherent integrated photonic systems, potentially benefiting numerous applications. △ Less

Submitted 14 December, 2023; originally announced December 2023.

Continuous Entanglement Distribution from an AlGaAs-on-Insulator Microcomb for Quantum Communications

Authors: Trevor J. Steiner, Maximilian Shen, Joshua E. Castro, John E. Bowers, Galan Moody

Abstract: Using an aluminum gallium arsenide microring resonator, we demonstrate a bright quantum optical microcomb with $>300$ nm bandwidth and more than 20 sets of time-energy entangled modes, enabling spectral demultiplexing with simple, off-the-shelf commercial telecom components. We report high-rate continuous entanglement distribution for two sets of entangled-photon pair frequency modes exhibiting up… ▽ More Using an aluminum gallium arsenide microring resonator, we demonstrate a bright quantum optical microcomb with $>300$ nm bandwidth and more than 20 sets of time-energy entangled modes, enabling spectral demultiplexing with simple, off-the-shelf commercial telecom components. We report high-rate continuous entanglement distribution for two sets of entangled-photon pair frequency modes exhibiting up to $20$ GHz/mW$^2$ pair generation rate. As an illustrative example of entanglement distribution, we perform a continuous-wave time-bin quantum key distribution protocol with 8 kbps raw key rates while maintaining less than 10$\%$ error rate and sufficient two-photon visibility to ensure security of the channel. When the $>$20 frequency modes are multiplexed, we estimate $>$100 kbps entanglement-based key rates or the creation of a multi-user quantum communications network. The entire system requires less than 110 $μ$W of on-chip optical power, demonstrating an efficient source of entangled frequency modes for quantum communications. As a proof of principle, a quantum key is distributed across 12 km of deployed fiber on the UCSB campus and used to transmit a 21 kB image with $<9\%$ error. △ Less

Submitted 21 October, 2023; originally announced October 2023.

Comments: 14 pages, 8 figures

A Novel Approach to Interface High-Q Fabry-Pérot Resonators with Photonic Circuits

Authors: Haotian Cheng, Naijun **, Zhaowei Dai, Chao Xiang, Joel Guo, Yishu Zhou, Scott A. Diddams, Franklyn Quinlan, John Bowers, Owen Miller, Peter Rakich

Abstract: The unique benefits of Fabry-Pérot resonators as frequency-stable reference cavities and as an efficient interface between atoms and photons make them an indispensable resource for emerging photonic technologies. To bring these performance benefits to next-generation communications, computation, and timekee** systems, it will be necessary to develop strategies to integrate compact Fabry-Pérot re… ▽ More The unique benefits of Fabry-Pérot resonators as frequency-stable reference cavities and as an efficient interface between atoms and photons make them an indispensable resource for emerging photonic technologies. To bring these performance benefits to next-generation communications, computation, and timekee** systems, it will be necessary to develop strategies to integrate compact Fabry-Pérot resonators with photonic integrated circuits. In this paper, we demonstrate a novel reflection cancellation circuit that utilizes a numerically optimized multi-port polarization-splitting grating coupler to efficiently interface high-finesse Fabry-Pérot resonators with a silicon photonic circuit. This circuit interface produces spatial separation of the incident and reflected waves, as required for on-chip Pound-Drever-Hall frequency locking, while also suppressing unwanted back reflections from the Fabry-Pérot resonator. Using inverse design principles, we design and fabricate a polarization-splitting grating coupler that achieves 55% coupling efficiency. This design realizes an insertion loss of 5.8 dB for the circuit interface and more than 9 dB of back reflection suppression, and we demonstrate the versatility of this system by using it to interface several reflective off-chip devices. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Unveiling the dynamical diversity of quantum dot lasers subject to optoelectronic feedback

Authors: Shihao Ding, Shiyuan Zhao, Justin Norman, Bozhang Dong, Heming Huang, John Bowers, Frédéric Grillot

Abstract: This paper investigates experimentally and numerically the nonlinear dynamics of an epitaxial quantum dot laser on silicon subjected to optoelectronic feedback. Experimental results showcase a diverse range of dynamics, encompassing square wave patterns, quasi-chaotic states, and mixed waveforms exhibiting fast and slow oscillations. These measurements unequivocally demonstrate that quantum dot la… ▽ More This paper investigates experimentally and numerically the nonlinear dynamics of an epitaxial quantum dot laser on silicon subjected to optoelectronic feedback. Experimental results showcase a diverse range of dynamics, encompassing square wave patterns, quasi-chaotic states, and mixed waveforms exhibiting fast and slow oscillations. These measurements unequivocally demonstrate that quantum dot lasers on silicon readily and stably generate a more extensive repertoire of nonlinear dynamics compared to quantum well lasers. This pronounced sensitivity of quantum dot lasers to optoelectronic feedback represents a notable departure from their inherent insensitivity to optical feedback arising from reflections. Moreover, based on the Ikeda-like model, our simulations illustrate that the inherent characteristics of quantum dot lasers on silicon enable rapid and diverse dynamic transformations in response to optoelectronic feedback. The emergence of these exotic dynamics paves the way for further applications like integrated optical clocks, optical logic, and optical computing. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Photonic chip-based low noise microwave oscillator

Authors: Igor Kudelin, William Groman, Qing-Xin Ji, Joel Guo, Megan L. Kelleher, Dahyeon Lee, Takuma Nakamura, Charles A. McLemore, Pedram Shirmohammadi, Samin Hanifi, Haotian Cheng, Naijun **, Sam Halliday, Zhaowei Dai, Lue Wu, Warren **, Yifan Liu, Wei Zhang, Chao Xiang, Vladimir Iltchenko, Owen Miller, Andrey Matsko, Steven Bowers, Peter T. Rakich, Joe C. Campbell , et al. (4 additional authors not shown)

Abstract: Numerous modern technologies are reliant on the low-phase noise and exquisite timing stability of microwave signals. Substantial progress has been made in the field of microwave photonics, whereby low noise microwave signals are generated by the down-conversion of ultra-stable optical references using a frequency comb. Such systems, however, are constructed with bulk or fiber optics and are diffic… ▽ More Numerous modern technologies are reliant on the low-phase noise and exquisite timing stability of microwave signals. Substantial progress has been made in the field of microwave photonics, whereby low noise microwave signals are generated by the down-conversion of ultra-stable optical references using a frequency comb. Such systems, however, are constructed with bulk or fiber optics and are difficult to further reduce in size and power consumption. Our work addresses this challenge by leveraging advances in integrated photonics to demonstrate low-noise microwave generation via two-point optical frequency division. Narrow linewidth self-injection locked integrated lasers are stabilized to a miniature Fabry-Pérot cavity, and the frequency gap between the lasers is divided with an efficient dark-soliton frequency comb. The stabilized output of the microcomb is photodetected to produce a microwave signal at 20 GHz with phase noise of -96 dBc/Hz at 100 Hz offset frequency that decreases to -135 dBc/Hz at 10 kHz offset--values which are unprecedented for an integrated photonic system. All photonic components can be heterogeneously integrated on a single chip, providing a significant advance for the application of photonics to high-precision navigation, communication and timing systems. △ Less

Submitted 17 July, 2023; originally announced July 2023.

Broadband quantum-dot frequency-modulated comb laser

Authors: Bozhang Dong, Mario Dumont, Osama Terra, Heming Wang, Andrew Netherton, John E. Bowers

Abstract: Frequency-modulated (FM) laser combs, which offer a periodic quasi-continuous-wave output and a flat-topped optical spectrum, are emerging as a promising solution for wavelength-division multiplexing applications, precision metrology, and ultrafast optical ranging. The generation of FM combs relies on spatial hole burning, group velocity dispersion (GVD), Kerr nonlinearity, and four-wave mixing (F… ▽ More Frequency-modulated (FM) laser combs, which offer a periodic quasi-continuous-wave output and a flat-topped optical spectrum, are emerging as a promising solution for wavelength-division multiplexing applications, precision metrology, and ultrafast optical ranging. The generation of FM combs relies on spatial hole burning, group velocity dispersion (GVD), Kerr nonlinearity, and four-wave mixing (FWM). While FM combs have been widely observed in quantum cascade Fabry-Perot (FP) lasers, the requirement for a low-dispersion FP cavity can be a challenge in platforms where the waveguide dispersion is mainly determined by the material. Here we report a 60 GHz quantum-dot (QD) mode-locked laser in which both the amplitude-modulated (AM) and the FM comb can be generated independently. The high FWM efficiency of -5 dB allows the QD laser to generate an FM comb efficiently. We also demonstrate that the Kerr nonlinearity can be practically engineered to improve the FM comb bandwidth without the need for GVD engineering. The maximum 3-dB bandwidth that our QD platform can deliver is as large as 2.2 THz. This study gives novel insights into the improvement of FM combs and paves the way for small-footprint, electrically-pumped, and energy-efficient frequency combs for silicon photonic integrated circuits (PICs). △ Less

Submitted 26 June, 2023; originally announced June 2023.

High-coherence hybrid-integrated 780 nm source by self-injection-locked second-harmonic generation in a high-Q silicon-nitride resonator

Authors: Bohan Li, Zhiquan Yuan, Warren **, Lue Wu, Joel Guo, Qing-Xin Ji, Avi Feshali, Mario Paniccia, John E. Bowers, Kerry J. Vahala

Abstract: By self-injection-locking a 1560 nm distributed feedback semiconductor laser to a high-$Q$ silicon nitride resonator, a high-coherence 780 nm second harmonic signal is generated via the photogalvanic-induced second-order nonlinearity. A record-low frequency noise floor of 4 Hz$^2$/Hz is achieved for the 780 nm emission. The approach can be generalized for signal generation over a wide range of vis… ▽ More By self-injection-locking a 1560 nm distributed feedback semiconductor laser to a high-$Q$ silicon nitride resonator, a high-coherence 780 nm second harmonic signal is generated via the photogalvanic-induced second-order nonlinearity. A record-low frequency noise floor of 4 Hz$^2$/Hz is achieved for the 780 nm emission. The approach can be generalized for signal generation over a wide range of visible and near-visible bands. △ Less

Submitted 18 June, 2023; originally announced June 2023.

Roadmap** the Next Generation of Silicon Photonics

Authors: Sudip Shekhar, Wim Bogaerts, Lukas Chrostowski, John E. Bowers, Michael Hochberg, Richard Soref, Bhavin J. Shastri

Abstract: Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions - mainly in the form of communication transceivers for data centers. Products in many exciting applications, such as sensing and computing, are around the corner. What will it take to i… ▽ More Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions - mainly in the form of communication transceivers for data centers. Products in many exciting applications, such as sensing and computing, are around the corner. What will it take to increase the proliferation of silicon photonics from millions to billions of units shipped? What will the next generation of silicon photonics look like? What are the common threads in the integration and fabrication bottlenecks that silicon photonic applications face, and which emerging technologies can solve them? This perspective article is an attempt to answer such questions. We chart the generational trends in silicon photonics technology, drawing parallels from the generational definitions of CMOS technology. We identify the crucial challenges that must be solved to make giant strides in CMOS-foundry-compatible devices, circuits, integration, and packaging. We identify challenges critical to the next generation of systems and applications - in communication, signal processing, and sensing. By identifying and summarizing such challenges and opportunities, we aim to stimulate further research on devices, circuits, and systems for the silicon photonics ecosystem. △ Less

Submitted 19 January, 2024; v1 submitted 25 May, 2023; originally announced May 2023.

Subspace tracking for independent phase noise source separation in frequency combs

Authors: Aleksandr Razumov, Holger R. Heebøll, Mario Dummont, Osama Terra, Bozhang Dong, Jasper Riebesehl, Poul Varming, Jens E. Pedersen, Francesco Da Ros, John E. Bowers, Darko Zibar

Abstract: Advanced digital signal processing techniques in combination with ultra-wideband balanced coherent detection have enabled a new generation of ultra-high speed fiber-optic communication systems, by moving most of the processing functionalities into digital domain. In this paper, we demonstrate how digital signal processing techniques, in combination with ultra-wideband balanced coherent detection c… ▽ More Advanced digital signal processing techniques in combination with ultra-wideband balanced coherent detection have enabled a new generation of ultra-high speed fiber-optic communication systems, by moving most of the processing functionalities into digital domain. In this paper, we demonstrate how digital signal processing techniques, in combination with ultra-wideband balanced coherent detection can enable optical frequency comb noise characterization techniques with novel functionalities. We propose a measurement method based on subspace tracking, in combination with multi-heterodyne coherent detection, for independent phase noise sources identification, separation and measurement. Our proposed measurement technique offers several benefits. First, it enables the separation of the total phase noise associated with a particular comb-line or -lines into multiple independent phase noise terms associated with different noise sources. Second, it facilitates the determination of the scaling of each independent phase noise term with comb-line number. Our measurement technique can be used to: identify the most dominant source of phase noise; gain a better understanding of the physics behind the phase noise accumulation process; and confirm, already existing, and enable better phase noise models. In general, our measurement technique provides new insights into noise behavior of optical frequency combs. △ Less

Submitted 18 September, 2023; v1 submitted 15 May, 2023; originally announced May 2023.

Observation of Floquet Chern insulators of light

Authors: Jicheng **, Li He, Jian Lu, Lin Chang, Chen Shang, John E. Bowers, Eugene J. Mele, Bo Zhen

Abstract: The field of topological photonics studies unique and robust photonic systems that are immune to defects and disorders due to the protection of their underlying topological phases. Mostly implemented in static systems, the studied topological phases are often defined in linear photonic band structures. In this study, we experimentally demonstrate Floquet Chern insulators in periodically driven non… ▽ More The field of topological photonics studies unique and robust photonic systems that are immune to defects and disorders due to the protection of their underlying topological phases. Mostly implemented in static systems, the studied topological phases are often defined in linear photonic band structures. In this study, we experimentally demonstrate Floquet Chern insulators in periodically driven nonlinear photonic crystals, where the topological phase is controlled by the polarization and the frequency of the driving field. Mediated by strong material nonlinearity, our system enters what we call the 'strong Floquet coupling regime', where the photonic Floquet bands cross and open new energy gaps with non-trivial topology as observed in our transient sum-frequency generation measurements. Our work offers new opportunities to explore the role of classical optical nonlinearity in topological phases and their applications in nonlinear optoelectronics. △ Less

Submitted 18 April, 2023; originally announced April 2023.

Comments: 24 pages, 5 figures

Resonant two-laser spin-state spectroscopy of a negatively charged quantum dot-microcavity system with a cold permanent magnet

Authors: P. Steindl, T. van der Ent, H. van der Meer, J. A. Frey, J. Norman, J. E. Bowers, D. Bouwmeester, W. Löffler

Abstract: A high-efficiency spin-photon interface is an essential piece of quantum hardware necessary for various quantum technologies. Self-assembled InGaAs quantum dots have excellent optical properties, if embedded into an optical micro-cavity they can show near-deterministic spin-photon entanglement and spin readout, but an external magnetic field is required to address the individual spin states, which… ▽ More A high-efficiency spin-photon interface is an essential piece of quantum hardware necessary for various quantum technologies. Self-assembled InGaAs quantum dots have excellent optical properties, if embedded into an optical micro-cavity they can show near-deterministic spin-photon entanglement and spin readout, but an external magnetic field is required to address the individual spin states, which usually is done using a superconducting magnet. Here, we show a compact cryogenically compatible SmCo magnet design that delivers 475 mT in-plane Voigt geometry magnetic field at 5 K, which is suitable to lift the energy degeneracy of the electron spin states and trion transitions of a single InGaAs quantum dot. This quantum dot is embedded in a birefringent high-finesse optical micro-cavity which enables efficient collection of single photons emitted by the quantum dot. We demonstrate spin-state manipulation by addressing the trion transitions with a single and two laser fields. The experimental data agrees well to our model which covers single- and two-laser cross-polarized resonance fluorescence, Purcell enhancement in a birefringent cavity, and variation of the laser powers. △ Less

Submitted 5 March, 2023; originally announced March 2023.

Comments: 7 pages, 5 figures. Supp. info: 7 pages, 9 figures

Cross-polarization extinction enhancement and spin-orbit coupling of light for quantum-dot cavity-QED spectroscopy

Authors: P. Steindl, J. A. Frey, J. Norman, J. E. Bowers, D. Bouwmeester, W. Löffler

Abstract: Resonant laser spectroscopy is essential for the characterization, operation, and manipulation of single quantum systems such as semiconductor quantum dots. The separation of the weak resonance fluorescence from the excitation laser is key for high-quality single- and entangled photon sources. This is often achieved by cross-polarization laser extinction, which is limited by the quality of the opt… ▽ More Resonant laser spectroscopy is essential for the characterization, operation, and manipulation of single quantum systems such as semiconductor quantum dots. The separation of the weak resonance fluorescence from the excitation laser is key for high-quality single- and entangled photon sources. This is often achieved by cross-polarization laser extinction, which is limited by the quality of the optical elements. Recently, it was discovered that Fresnel-reflection birefringence in combination with single-mode filtering counteracting spin-orbit coupling effects enables a three-order of magnitude improvement of polarization extinction [PRX 11, 021007 (2021)]. Here, we first investigate multiple reflections and analyze beam resha**, and observe that the single-reflection extinction enhancement is optimal. We then demonstrate this method for cross-polarization extinction enhancement for a resonantly excited semiconductor quantum dot in a birefringent optical micro cavity, and observe a 10x improvement of single-photon contrast. △ Less

Submitted 10 February, 2023; originally announced February 2023.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. Applied 19, 064082 (2023)

Soliton pulse pairs at multiple colors in normal dispersion microresonators

Authors: Zhiquan Yuan, Maodong Gao, Yan Yu, Heming Wang, Warren **, Qing-Xin Ji, Avi Feshali, Mario Paniccia, John Bowers, Kerry Vahala

Abstract: Soliton microcombs are hel** to advance the miniaturization of a range of comb systems. These combs mode lock through the formation of short temporal pulses in anomalous dispersion resonators. Here, a new microcomb is demonstrated that mode locks through the formation of pulse pairs in normal-dispersion coupled-ring resonators. Unlike conventional microcombs, pulses in this system cannot exist a… ▽ More Soliton microcombs are hel** to advance the miniaturization of a range of comb systems. These combs mode lock through the formation of short temporal pulses in anomalous dispersion resonators. Here, a new microcomb is demonstrated that mode locks through the formation of pulse pairs in normal-dispersion coupled-ring resonators. Unlike conventional microcombs, pulses in this system cannot exist alone, and instead must phase lock in pairs to form a bright soliton comb. Also, the pulses can form at recurring spectral windows and the pulses in each pair feature different optical spectra. This pairwise mode-locking modality extends to higher dimensions and we demonstrate 3-ring systems in which 3 pulses mode lock through alternating pairwise pulse coupling. The results are demonstrated using the new CMOS-foundry platform that has not previously produced bright solitons on account of its inherent normal dispersion. The ability to generate multi-color pulse pairs over multiple rings is an important new feature for microcombs. It can extend the concept of all-optical soliton buffers and memories to multiple storage rings that multiplex pulses with respect to soliton color and that are spatially addressable. The results also suggest a new platform for the study of quantum combs and topological photonics. △ Less

Submitted 26 January, 2023; originally announced January 2023.

Engineered zero-dispersion microcombs using CMOS-ready photonics

Authors: Qing-Xin Ji, Warren **, Lue Wu, Yan Yu, Zhiquan Yuan, Wei Zhang, Maodong Gao, Bohan Li, Heming Wang, Chao Xiang, Joel Guo, Avi Feshali, Mario Paniccia, Vladimir S. Ilchenko, Andrey B. Matsko, John Bowers, Kerry Vahala

Abstract: Normal group velocity dispersion (GVD) microcombs offer high comb line power and high pum** efficiency compared to bright pulse microcombs. The recent demonstration of normal GVD microcombs using CMOS-foundry-produced microresonators is an important step towards scalable production. However, the chromatic dispersion of CMOS devices is large and impairs generation of broadband microcombs. Here, w… ▽ More Normal group velocity dispersion (GVD) microcombs offer high comb line power and high pum** efficiency compared to bright pulse microcombs. The recent demonstration of normal GVD microcombs using CMOS-foundry-produced microresonators is an important step towards scalable production. However, the chromatic dispersion of CMOS devices is large and impairs generation of broadband microcombs. Here, we report the development of a microresonator in which GVD is reduced due to a couple-ring resonator configuration. Operating in the turnkey self-injection-locking mode, the resonator is hybridly integrated with a semiconductor laser pump to produce high-power-efficiency combs spanning a bandwidth of 9.9 nm (1.22 THz) centered at 1560 nm, corresponding to 62 comb lines. Fast, linear optical sampling of the comb waveform is used to observe the rich set of near-zero GVD comb behaviors, including soliton molecules, switching waves (platicons) and their hybrids. Tuning of the 20 GHz repetition rate by electrical actuation enables servo locking to a microwave reference, which simultaneously stabilizes the comb repetition rate, offset frequency and temporal waveform. This hybridly integrated system could be used in coherent communications or for ultra-stable microwave signal generation by two-point optical frequency division. △ Less

Submitted 26 January, 2023; originally announced January 2023.

Comments: 8 pages, 4 figures

Three-dimensional integration enables ultra-low-noise, isolator-free Si photonics

Authors: Chao Xiang, Warren **, Osama Terra, Bozhang Dong, Heming Wang, Lue Wu, Joel Guo, Theodore J. Morin, Eamonn Hughes, Jonathan Peters, Qing-Xin Ji, Avi Feshali, Mario Paniccia, Kerry J. Vahala, John E. Bowers

Abstract: While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and fibers in high-precision, highly-coherent applications will require ultra-low-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format -- that is, on a single chip. Such… ▽ More While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and fibers in high-precision, highly-coherent applications will require ultra-low-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format -- that is, on a single chip. Such PICs could offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. However, there are two major issues preventing the realization of such envisioned PICs: the high phase noise of semiconductor lasers, and the difficulty of integrating optical isolators directly on chip. PICs are still considered as inferior solutions in optical systems such as microwave synthesizers, optical gyroscopes and atomic clocks, despite their advantages in size, weight, power consumption and cost (SWaPC). Here, we challenge this convention by introducing three-dimensional (3D) integration in silicon photonics that results in ultra-low-noise, isolator-free PICs. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III-V gain and ultra-low-loss (ULL) silicon nitride (SiN) waveguides with optical loss around 0.5 dB/m are demonstrated. Consequently, the demonstrated PIC enters a new regime, such that an integrated ultra-high-Q cavity reduces the laser noise close to that of fiber lasers. Moreover, the cavity acts as an effective block for any downstream on-chip or off-chip reflection-induced destabilization, thus eliminating the need for optical isolators. We further showcase isolator-free, widely-tunable, low-noise, heterodyne microwave generation using two ultra-low-noise lasers on the same silicon chip. △ Less

Submitted 19 January, 2023; originally announced January 2023.

Soliton generation in AlGaAs microresonators at room temperature

Authors: Lue Wu, Weiqiang Xie, Chao Xiang, Lin Chang, Yan Yu, Hao-**g Chen, Yoshihisa Yamamoto, John E. Bowers, Kerry J. Vahala, Myoung-Gyun Suh

Abstract: Chip-integrated optical frequency combs are attractive optical sources in comb applications requiring high-repetition-rate, low power consumption, or compact size. Spontaneous soliton formation via Kerr parametric oscillation is a promising generation principle in these frequency combs, and has been demonstrated in several material platforms over the past decade. Of these materials, AlGaAs has one… ▽ More Chip-integrated optical frequency combs are attractive optical sources in comb applications requiring high-repetition-rate, low power consumption, or compact size. Spontaneous soliton formation via Kerr parametric oscillation is a promising generation principle in these frequency combs, and has been demonstrated in several material platforms over the past decade. Of these materials, AlGaAs has one of the largest Kerr nonlinearity coefficients allowing low pump threshold comb generation. However, bright soliton generation using this material has only been possible at cryogenic temperature because of the large thermo-optic effect at room temperature, which hinders stable access to the soliton regime. Here, we report self-stabilized single soliton generation in AlGaAs microresonators at room temperature by utilizing a rising soliton step in large free-spectral-range resonators. With sub-milliWatt optical pump power, 1 THz repetition-rate soliton generation is demonstrated. Perfect soliton crystal formation and soliton breather states are also observed. Besides the advantages of large optical nonlinearity, the devices are natural candidates for integration with III-V pump lasers. △ Less

Submitted 17 November, 2022; originally announced November 2022.

Comments: 7 pages, 3 figure

Ultralow voltage, High-speed, and Energy-efficient Cryogenic Electro-Optic Modulator

Authors: Paolo Pintus, Anshuman Singh, Weiqiang Xie, Leonardo Ranzani, Martin V. Gustafsson, Minh A. Tran, Chao Xiang, Jonathan Peters, John E. Bowers, Moe Soltani

Abstract: Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature en… ▽ More Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature environment. Such a solution is central to overcome the major bottleneck in the scalability of cryogenic systems, which currently rely on bulky copper cables that suffer from limited bandwidth, large heat load, and do not show any scalability path. A key element for realizing a cryogenic-to-room temperature optical interconnect is a high-speed electro-optic (EO) modulator operating at 4 K with operation voltage at mV scale, compatible with SC electronics. Although several cryogenic EO modulators have been demonstrated, their driving voltages are significantly large compared to the mV scale voltage required for SC circuits. Here, we demonstrate a cryogenic modulator with ~10 mV peak-to-peak driving voltage and gigabits/sec data rate, with ultra-low electric and optical energy consumptions of ~10.4 atto-joules/bit and ~213 femto-joules/bit, respectively. We achieve this record performance by designing a compact optical ring resonator modulator in a heterogeneous InP-on-Silicon platform, where we optimize a multi-quantum well layer of InAIGaAs to achieve a strong EO effect at 4 K. Unlike other semiconductors such as silicon, our platform benefits from the high-carrier mobility and minimal free carrier freezing of III-V compounds at low temperatures, with moderate do** level and low loss (intrinsic resonator Q~272,000). These modulators can pave the path for complex cryogenic photonic functionalities and massive data transmission between cryogenic and room-temperature electronics. △ Less

Submitted 7 July, 2022; originally announced July 2022.

Comments: 18 page manuscript with 5 figures and 1 table, plus 17 page supplementary material

Self-injection-locked second-harmonic integrated source

Authors: **gwei Ling, Jeremy Staffa, Heming Wang, Boqiang Shen, Lin Chang, Usman A. Javid, Lue Wu, Zhiquan Yuan, Raymond Lopez-Rios, Mingxiao Li, Yang He, Bohan Li, John E. Bowers, Kerry J. Vahala, Qiang Lin

Abstract: High coherence visible and near-visible laser sources are centrally important to the operation of advanced position/navigation/timing systems as well as classical/quantum sensing systems. However, the complexity and size of these bench-top lasers is an impediment to their transitioning beyond the laboratory. Here, a system-on-a-chip that emits high-coherence visible and near-visible lightwaves is… ▽ More High coherence visible and near-visible laser sources are centrally important to the operation of advanced position/navigation/timing systems as well as classical/quantum sensing systems. However, the complexity and size of these bench-top lasers is an impediment to their transitioning beyond the laboratory. Here, a system-on-a-chip that emits high-coherence visible and near-visible lightwaves is demonstrated. The devices rely upon a new approach wherein wavelength conversion and coherence increase by self-injection-locking are combined within in a single nonlinear resonator. This simplified approach is demonstrated in a hybridly-integrated device and provides a short-term linewidth around 10-30 kHz. On-chip, converted optical power over 2 mW is also obtained. Moreover, measurements show that heterogeneous integration can result in conversion efficiency higher than 25% with output power over 11 mW. Because the approach uses mature III-V pump lasers in combination with thin-film lithium niobate, it can be scaled for low-cost manufacturing of high-coherence visible emitters. Also, the coherence generation process can be transferred to other frequency conversion processes including optical parametric oscillation, sum/difference frequency generation, and third-harmonic generation. △ Less

Submitted 6 July, 2022; originally announced July 2022.

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Authors: Chen Shang, Kaiyin Feng, Eamonn T. Hughes, Andrew Clark, Mukul Debnath, Rosalyn Koscica, Gerald Leake, Joshua Herman, David Harame, Peter Ludewig, Yating Wan, John E. Bowers

Abstract: Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region… ▽ More Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate the first electrically pumped QD lasers grown on a 300 mm patterned (001) Si wafer with a butt-coupled configuration by molecular beam epitaxy (MBE). Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Comments: 11 pages including references, 6 figures

Integrated Passive Nonlinear Optical Isolators

Authors: Alexander D. White, Geun Ho Ahn, Kasper Van Gasse, Ki Youl Yang, Lin Chang, John E. Bowers, Jelena Vučković

Abstract: Fiber and bulk-optical isolators are widely used to stabilize laser cavities by preventing unwanted feedback. However, their integrated counterparts have been slow to be adopted. While several strategies for on-chip optical isolation have been realized, these rely on either integration of magneto-optic materials or high frequency modulation with acousto-optic or electro-optic modulators. Here, we… ▽ More Fiber and bulk-optical isolators are widely used to stabilize laser cavities by preventing unwanted feedback. However, their integrated counterparts have been slow to be adopted. While several strategies for on-chip optical isolation have been realized, these rely on either integration of magneto-optic materials or high frequency modulation with acousto-optic or electro-optic modulators. Here, we demonstrate an integrated approach for passively isolating a continuous wave laser using the intrinsically non-reciprocal Kerr nonlinearity in ring resonators. Using silicon nitride as a model platform, we achieve single ring isolation of 17-23dB with 1.8-5.5dB insertion loss, and a cascaded ring isolation of 35dB with 5dB insertion loss. Employing these devices, we demonstrate hybrid integration and isolation with a semi-conductor laser chip. △ Less

Submitted 13 June, 2022; v1 submitted 2 June, 2022; originally announced June 2022.

Expanding the Quantum Photonic Toolbox in AlGaAsOI

Authors: Joshua E. Castro, Trevor J. Steiner, Lillian Thiel, Alex Dinkelacker, Corey McDonald, Paolo Pintus, Lin Chang, John E. Bowers, Galan Moody

Abstract: Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $χ^\left(2\right)$ and $χ^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical bu… ▽ More Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $χ^\left(2\right)$ and $χ^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3-dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we demultiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications. △ Less

Submitted 13 May, 2022; originally announced May 2022.

Journal ref: APL Photonics 7, 096103 (2022)

Integrated Pockels Laser

Authors: Mingxiao Li, Lin Chang, Lue Wu, Jeremy Staffa, **gwei Ling, Usman A. Javid, Yang He, Raymond Lopez-rios, Shixin Xue, Theodore J. Morin, Boqiang Shen, Heming Wang, Siwei Zeng, Lin Zhu, Kerry J. Vahala, John E. Bowers, Qiang Lin

Abstract: The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key… ▽ More The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0$\times$10$^{18}$ Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR. △ Less

Submitted 26 April, 2022; originally announced April 2022.

Chip-Based Laser with 1 Hertz Integrated Linewidth

Authors: Joel Guo, Charles A. McLemore, Chao Xiang, Dahyeon Lee, Lue Wu, Warren **, Megan Kelleher, Naijun **, David Mason, Lin Chang, Avi Feshali, Mario Paniccia, Peter T. Rakich, Kerry J. Vahala, Scott A. Diddams, Franklyn Quinlan, John E. Bowers

Abstract: Lasers with hertz-level linewidths on timescales up to seconds are critical for precision metrology, timekee**, and manipulation of quantum systems. Such frequency stability typically relies on bulk-optic lasers and reference cavities, where increased size is leveraged to improve noise performance, but with the trade-off of cost, hand assembly, and limited application environments. On the other… ▽ More Lasers with hertz-level linewidths on timescales up to seconds are critical for precision metrology, timekee**, and manipulation of quantum systems. Such frequency stability typically relies on bulk-optic lasers and reference cavities, where increased size is leveraged to improve noise performance, but with the trade-off of cost, hand assembly, and limited application environments. On the other hand, planar waveguide lasers and cavities exploit the benefits of CMOS scalability but are fundamentally limited from achieving hertz-level linewidths at longer times by stochastic noise and thermal sensitivity inherent to the waveguide medium. These physical limits have inhibited the development of compact laser systems with frequency noise required for portable optical clocks that have performance well beyond conventional microwave counterparts. In this work, we break this paradigm to demonstrate a compact, high-coherence laser system at 1548 nm with a 1 s integrated linewidth of 1.1 Hz and fractional frequency instability less than 10$^{-14}$ from 1 ms to 1 s. The frequency noise at 1 Hz offset is suppressed by 11 orders of magnitude from that of the free-running diode laser down to the cavity thermal noise limit near 1 Hz$^2$/Hz, decreasing to 10$^{-3}$ Hz$^2$/Hz at 4 kHz offset. This low noise performance leverages wafer-scale integrated lasers together with an 8 mL vacuum-gap cavity that employs micro-fabricated mirrors with sub-angstrom roughness to yield an optical $Q$ of 11.8 billion. Significantly, all the critical components are lithographically defined on planar substrates and hold the potential for parallel high-volume manufacturing. Consequently, this work provides an important advance towards compact lasers with hertz-level linewidths for applications such as portable optical clocks, low-noise RF photonic oscillators, and related communication and navigation systems. △ Less

Submitted 30 March, 2022; originally announced March 2022.

Analysis of the spontaneous emission limited linewidth of an integrated III-V/SiN laser

Authors: Weng W. Chow, Yating Wan, John E. Bowers, Frédéric Grillot

Abstract: This paper describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III-V intracavity components. Central to the approach are a) description of the multi-element laser cavity in terms of composite laser/free-space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave… ▽ More This paper describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III-V intracavity components. Central to the approach are a) description of the multi-element laser cavity in terms of composite laser/free-space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave mixing, and c) incorporation of quantum-optical contributions to account for spontaneous emission effects. Application of the model is illustrated for the case of linewidth narrowing in an InAs quantum-dot laser coupled to a high-Q SiN cavity. △ Less

Submitted 21 December, 2021; originally announced December 2021.

Sub-milliwatt, widely-tunable coherent microcomb generation with feedback-free operation

Authors: Haowen Shu, Lin Chang, Chenghao Lao, Bitao Shen, Weiqiang Xie, Xuguang Zhang, Ming **, Yuansheng Tao, Ruixuan Chen, Zihan Tao, Shaohua Yu, Qi-Fan Yang, Xingjun Wang, John E. Bowers

Abstract: Microcombs are revolutionizing optoelectronics by providing parallelized, mutually coherent wavelength channels for time-frequency metrology and information processing. To implement this essential function in integrated photonic systems, it is desirable to drive microcombs directly with an on-chip laser in a simple and flexible way. However, two major difficulties are preventing this goal: 1) gene… ▽ More Microcombs are revolutionizing optoelectronics by providing parallelized, mutually coherent wavelength channels for time-frequency metrology and information processing. To implement this essential function in integrated photonic systems, it is desirable to drive microcombs directly with an on-chip laser in a simple and flexible way. However, two major difficulties are preventing this goal: 1) generating mode-locked comb states usually requires a significant amount of pump power and 2) the requirement to align laser and resonator frequency significantly complicates operation and limits the tunability of the comb lines. Here, we address these problems by using microresonators on an AlGaAs on-insulator platform to generate dark-pulse microcombs. This highly nonlinear platform dramatically relaxes fabrication requirements and leads to a record-low pump power of less than 1 mW for coherent comb generation. Dark-pulse microcombs facilitated by thermally-controlled avoided mode-crossings are accessed by direct DFB laser pum**. Without any feedback or control circuitries, the comb shows good coherence and stability. This approach also leads to an unprecedented wide chir** range of all the comb lines. Our work provides a route to realize power-efficient, simple and reconfigurable microcombs that can be seamlessly integrated with a wide range of photonic systems. △ Less

Submitted 16 December, 2021; originally announced December 2021.

Extending the spectrum of fully integrated photonics

Authors: Minh Tran, Chong Zhang, Theodore Morin, Lin Chang, Sabyasachi Barik, Zhiquan Yuan, Woonghee Lee, Glenn Kim, Aditya Malik, Zeyu Zhang, Joel Guo, Heming Wang, Boqiang Shen, Lue Wu, Kerry Vahala, John Bowers, Tin Komljenovic, Hyundai Park

Abstract: Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the last decade, the progression from pure III-V materials platforms to silicon photonics has significantly broadened the scope of integrated photonics by combining… ▽ More Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the last decade, the progression from pure III-V materials platforms to silicon photonics has significantly broadened the scope of integrated photonics by combining integrated lasers with the high-volume, advanced fabrication capabilities of the commercial electronics industry. Yet, despite remarkable manufacturing advantages, reliance on silicon-based waveguides currently limits the spectral window available to photonic integrated circuits (PICs). Here, we present a new generation of integrated photonics by directly uniting III-V materials with silicon nitride (SiN) waveguides on Si wafers. Using this technology, we present the first fully integrated PICs at wavelengths shorter than silicon's bandgap, demonstrating essential photonic building blocks including lasers, photodetectors, modulators and passives, all operating at sub-um wavelengths. Using this platform, we achieve unprecedented coherence and tunability in an integrated laser at short wavelength. Furthermore, by making use of this higher photon energy, we demonstrate superb high temperature performance and, for the first time, kHz-level fundamental linewidths at elevated temperatures. Given the many potential applications at short wavelengths, the success of this integration strategy unlocks a broad range of new integrated photonics applications. △ Less

Submitted 9 December, 2021; v1 submitted 6 December, 2021; originally announced December 2021.

Probing material absorption and optical nonlinearity of integrated photonic materials

Authors: Maodong Gao, Qi-Fan Yang, Qing-Xin Ji, Heming Wang, Lue Wu, Boqiang Shen, Junqiu Liu, Guanhao Huang, Lin Chang, Weiqiang Xie, Su-Peng Yu, Scott B. Papp, John E. Bowers, Tobias J. Kippenberg, Kerry J. Vahala

Abstract: Optical microresonators with high quality ($Q$) factors are essential to a wide range of integrated photonic devices. Steady efforts have been directed towards increasing microresonator $Q$ factors across a variety of platforms. With success in reducing microfabrication process-related optical loss as a limitation of $Q$, the ultimate attainable $Q$, as determined solely by the constituent microre… ▽ More Optical microresonators with high quality ($Q$) factors are essential to a wide range of integrated photonic devices. Steady efforts have been directed towards increasing microresonator $Q$ factors across a variety of platforms. With success in reducing microfabrication process-related optical loss as a limitation of $Q$, the ultimate attainable $Q$, as determined solely by the constituent microresonator material absorption, has come into focus. Here, we report measurements of the material-limited $Q$ factors in several photonic material platforms. High-$Q$ microresonators are fabricated from thin films of SiO$_2$, Si$_3$N$_4$, Al$_{0.2}$Ga$_{0.8}$As and Ta$_2$O$_5$. By using cavity-enhanced photothermal spectroscopy, the material-limited $Q$ is determined. The method simultaneously measures the Kerr nonlinearity in each material and reveals how material nonlinearity and ultimate $Q$ vary in a complementary fashion across photonic materials. Besides guiding microresonator design and material development in four material platforms, the results help establish performance limits in future photonic integrated systems. △ Less

Submitted 29 October, 2021; originally announced November 2021.

Comments: Maodong Gao, Qi-Fan Yang and Qing-Xin Ji contributed equally to this work. 9 pages, 4 figures, 1 table

Journal ref: Nature Communications 13, 3323 (2022)

Bridging microcombs and silicon photonic engines for optoelectronics systems

Authors: Haowen Shu, Lin Chang, Yuansheng Tao, Bitao Shen, Weiqiang Xie, Ming **, Andrew Netherton, Zihan Tao, Xuguang Zhang, Ruixuan Chen, Bowen Bai, Jun Qin, Shaohua Yu, Xingjun Wang, John E. Bowers

Abstract: Microcombs have sparked a surge of applications over the last decade, ranging from optical communications to metrology. Despite their diverse deployment, most microcomb-based systems rely on a tremendous amount of bulk equipment to fulfill their desired functions, which is rather complicated, expensive and power-consuming. On the other hand, foundry-based silicon photonics (SiPh) has had remarkabl… ▽ More Microcombs have sparked a surge of applications over the last decade, ranging from optical communications to metrology. Despite their diverse deployment, most microcomb-based systems rely on a tremendous amount of bulk equipment to fulfill their desired functions, which is rather complicated, expensive and power-consuming. On the other hand, foundry-based silicon photonics (SiPh) has had remarkable success in providing versatile functionality in a scalable and low-cost manner, but its available chip-based light sources lack the capacity for parallelization, which limits the scope of SiPh applications. Here, we bridge these two technologies by using a power-efficient and operationally-simple AlGaAs on insulator microcomb source to drive CMOS SiPh engines. We present two important chip-scale photonic systems for optical data transmissions and microwave photonics respectively: The first microcomb-based integrated photonic data link is demonstrated, based on a pulse-amplitude 4-level modulation scheme with 2 Tbps aggregate rate, and a highly reconfigurable microwave photonic filter with unprecedented integration level is constructed, using a time stretch scheme. Such synergy of microcomb and SiPh integrated components is an essential step towards the next generation of fully integrated photonic systems. △ Less

Submitted 25 October, 2021; originally announced October 2021.

Comments: 10 pages, 4 figures

Journal ref: Nature 605, 457-463 (2022)

A low-power integrated magneto-optic modulator on silicon for cryogenic applications

Authors: Paolo Pintus, Leonardo Ranzani, Sergio Pinna, Duanni Huang, Martin V. Gustafsson, Fotini Karinou, Giovanni Andrea Casula, Yuya Shoji, Yota Takamura, Tetsuya Mizumoto, Mohammad Soltani, John E. Bowers

Abstract: A fundamental challenge of the quantum revolution is to efficiently interface the quantum computing systems operating at cryogenic temperatures with room temperature electronics and media for high data-rate communication. Current approaches to control and readout of such cryogenic computing systems use electrical cables, which prevent scalability due to their large size, heat conduction, and limit… ▽ More A fundamental challenge of the quantum revolution is to efficiently interface the quantum computing systems operating at cryogenic temperatures with room temperature electronics and media for high data-rate communication. Current approaches to control and readout of such cryogenic computing systems use electrical cables, which prevent scalability due to their large size, heat conduction, and limited bandwidth1. A more viable approach is to use optical fibers which allow high-capacity transmission and thermal isolation. A key component in implementing photonic datalinks is a cryogenic optical modulator for converting data from the electrical to the optical domain at high speed and with low power consumption, while operating at temperatures of 4 K or lower. Cryogenic modulators based on the electro-optic effect have been demonstrated in a variety of material platforms, however they are voltage driven components while superconducting circuits are current based, resulting in a large impedance mismatch. Here, we present the first demonstration of an integrated current-driven modulator based on the magneto-optic effect operating over a wide temperature range that extends down to less than 4 K. The modulator works at data rates up to 2 Gbps with energy consumption below 4 pJ/bit, and we show that this figure can be reduced to less than 40 fJ/bit with optimized design and fabrication. This modulator is a hybrid device, where a current-driven magneto-optically active crystal (cerium substituted yttrium iron garnet, or Ce:YIG) is bonded to a high-quality silicon microring resonator. Because of its potential for extremely low power consumption under cryogenic conditions, the class of magneto-optical modulators demonstrated here has the potential to enable efficient data links in large-scale systems for quantum information processing. △ Less

Submitted 9 September, 2021; originally announced September 2021.

Comments: Single pdf file

Enhanced optical nonlinearities in epitaxial quantum dots lasers on silicon for future photonic integrated systems

Authors: Jianan Duan, Weng W. Chow, Bozhang Dong, Heming Huang, Songtao Liu, Justin C. Norman, John E. Bowers, Frederic Grillot

Abstract: Four-wave mixing (FWM) is an important nonlinear optical phenomenon that underlines many of the discoveries and device applications since the laser was invented. Examples include parametric amplification, mode-locked pulses and frequency combs, and in the quantum optics regime, entangled-photon generation, squeezed-state production and optical transduction from the visible to infrared wavelengths.… ▽ More Four-wave mixing (FWM) is an important nonlinear optical phenomenon that underlines many of the discoveries and device applications since the laser was invented. Examples include parametric amplification, mode-locked pulses and frequency combs, and in the quantum optics regime, entangled-photon generation, squeezed-state production and optical transduction from the visible to infrared wavelengths. For quantum dot systems, the basic understanding of FWM is limited by the conventional investigation method, which concentrates on the FWM susceptibility measured with optical amplifiers. This paper addresses this weakness by performing laser experiments to account for all optical nonlinearities contributing to the FWM signal. Meanwhile, we gain valuable insight into the intricate interplay among optical nonlinearities. Using quantum dot lasers directly grown on silicon, we achieved FWM conversion efficiency sufficient to demonstrate self-mode-locking in a single-section laser diode, with sub-ps mode-locked pulse duration and kHz frequency-comb linewidth. A comparison with first-principles based multimode laser theory indicates measured FWM conversion efficiencies that are close to the theoretical limit. An advantage over earlier studies and crucial to confidence in the results are the quality and reproducibility of state-of-the-art quantum dot lasers. They make possible the detailed study of conversion efficiency over a broad parameter space, and the identification of the importance of p-do**. Systematic improvement based on our understanding of underlying physics will lead to transform limited performance and effective compensation of intrinsic and extrinsic effects, such as linewidth enhancement and background dispersion. The integration of FWM with lasing impacts numerous optoelectronic components used in telecom and datacom. △ Less

Submitted 21 June, 2021; originally announced June 2021.

Review Of Integrated Photonic Elastic WDM Switches For Data Centers

Authors: Akhilesh S P Khope, Anirban Samanta, Xian Xiao, Ben Yoo, John E Bowers

Abstract: In this review paper, we present an elaborate discussion on wavelength selective switches and their demonstrations. We also review packaging and electronic photonic integration of switches; a topic neglected in other review papers. We also cover wavelength locking which is paramount in switching networks with many tunable filters. In this review paper, we present an elaborate discussion on wavelength selective switches and their demonstrations. We also review packaging and electronic photonic integration of switches; a topic neglected in other review papers. We also cover wavelength locking which is paramount in switching networks with many tunable filters. △ Less

Submitted 23 May, 2021; originally announced May 2021.

High-performance lasers for fully integrated silicon nitride photonics

Authors: Chao Xiang, Joel Guo, Warren **, Jonathan Peters, Weiqiang Xie, Lin Chang, Boqiang Shen, Heming Wang, Qi-Fan Yang, Lue Wu, David Kinghorn, Mario Paniccia, Kerry J. Vahala, Paul A. Morton, John E. Bowers

Abstract: Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain… ▽ More Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, nonoptimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output through the SiN waveguide and sub-kHz fundamental linewidth, addressing all of the aforementioned issues. We also show Hertz-level linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-$Q$ SiN resonators, mark a milestone towards a fully-integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 8 pages, 3 figures

Hybrid InP and SiN integration of an octave-spanning frequency comb

Authors: Travis C. Briles, Su-Peng Yu, Lin Chang, Chao Xiang, Joel Guo, David Kinghorn, Gregory Moille, Kartik Srinivasan, John E. Bowers, Scott B. Papp

Abstract: Implementing optical-frequency combs with integrated photonics will enable wider use of precision timing signals.Here, we explore the generation of an octave-span, Kerr-microresonator frequency comb, using hybrid integration ofan InP distributed-feedback laser and a SiN photonic-integrated circuit. We demonstrate electrically pumped and fiber-packaged prototype systems, enabled by self-injection l… ▽ More Implementing optical-frequency combs with integrated photonics will enable wider use of precision timing signals.Here, we explore the generation of an octave-span, Kerr-microresonator frequency comb, using hybrid integration ofan InP distributed-feedback laser and a SiN photonic-integrated circuit. We demonstrate electrically pumped and fiber-packaged prototype systems, enabled by self-injection locking. This direct integration of a laser and a microresonatorcircuit without previously used intervening elements, like optical modulators and isolators, necessitates understand-ing self-injection-locking dynamics with octave-span Kerr solitons. In particular, system architectures must adjust tothe strong coupling of microresonator back-scattering and laser-microresonator frequency detuning that we uncoverhere. Our work illustrates critical considerations towards realizing a self-referenced frequency comb with integratedphotonics. △ Less

Submitted 4 April, 2021; originally announced April 2021.

Comments: 9 pages, 4 figures. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in APL Photonics 6, 026102 (2021) and may be found at https://doi.org/10.1063/5.0035452

Journal ref: APL Photonics 6, 026102 (2021)

Inverse-designed multi-dimensional silicon photonic transmitters

Authors: Ki Youl Yang, Alexander D. White, Farshid Ashtiani, Chinmay Shirpurkar, Srinivas V. Pericherla, Lin Chang, Hao Song, Kaiheng Zou, Huibin Zhou, Kai Pang, Joshua Yang, Melissa A. Guidry, Daniil M. Lukin, Han Hao, Lawrence Trask, Geun Ho Ahn, Andy Netherton, Travis C. Briles, Jordan R. Stone, Lior Rechtman, Jeffery S. Stone, Kasper Van Gasse, **hie L. Skarda, Logan Su, Dries Vercruysse , et al. (11 additional authors not shown)

Abstract: Modern microelectronic processors have migrated towards parallel computing architectures with many-core processors. However, such expansion comes with diminishing returns exacted by the high cost of data movement between individual processors. The use of optical interconnects has burgeoned as a promising technology that can address the limits of this data transfer. While recent pushes to enhance o… ▽ More Modern microelectronic processors have migrated towards parallel computing architectures with many-core processors. However, such expansion comes with diminishing returns exacted by the high cost of data movement between individual processors. The use of optical interconnects has burgeoned as a promising technology that can address the limits of this data transfer. While recent pushes to enhance optical communication have focused on develo** wavelength-division multiplexing technology, this approach will eventually saturate the usable bandwidth, and new dimensions of data transfer will be paramount to fulfill the ever-growing need for speed. Here we demonstrate an integrated intra- and inter-chip multi-dimensional communication scheme enabled by photonic inverse design. Using inverse-designed mode-division multiplexers, we combine wavelength- and mode- multiplexing and send massively parallel data through nano-photonic waveguides and optical fibres. Crucially, as we take advantage of an orthogonal optical basis, our approach is inherently scalable to a multiplicative enhancement over the current state of the art. △ Less

Submitted 10 October, 2021; v1 submitted 25 March, 2021; originally announced March 2021.

Comments: Fig.2-4 present new experimental results -- (i) demonstration of a broadband, low cross-talk multiplexer, (ii) a silicon photonic mode-division multiplexing with a chip-scale soliton microcomb source, and (iii) a chip-to-chip optical interconnect using a multimode-matched fibre and inverse-designed beam couplers

Self-regulating soliton domain walls in microresonators

Authors: Heming Wang, Boqiang Shen, Yan Yu, Zhiquan Yuan, Chengying Bao, Warren **, Lin Chang, Mark A. Leal, Avi Feshali, Mario Paniccia, John E. Bowers, Kerry Vahala

Abstract: Dissipative soliton Kerr frequency combs in microresonators have recently been demonstrated with the self-injection locking process. They have the advantage of turnkey deterministic comb generation and simplifying dark soliton generation in the normal dispersion regime. Here, the formation process of dark pulses triggered by self-injection locking is studied by regarding them as a pair of domain w… ▽ More Dissipative soliton Kerr frequency combs in microresonators have recently been demonstrated with the self-injection locking process. They have the advantage of turnkey deterministic comb generation and simplifying dark soliton generation in the normal dispersion regime. Here, the formation process of dark pulses triggered by self-injection locking is studied by regarding them as a pair of domain walls that connect domains having different intracavity powers. The self-injection locking mechanism allows the domain walls to self-regulate their position so that a wide range of dark comb states can be accessed, and the duty cycle is controlled by the feedback phase. Direct imaging of the dark pulse shape using the electro-optic sampling technique is used to verify the theory. The results provide new physical insights as well as a new operational modality for this important class of nonlinear waves. △ Less

Submitted 24 November, 2021; v1 submitted 18 March, 2021; originally announced March 2021.

Comments: 20 pages, 10 figures

Platicon microcomb generation using laser self-injection locking

Authors: Grigory Lihachev, Junqiu Liu, Wenle Weng, Lin Chang, Joel Guo, Jijun He, Rui Ning Wang, Miles H. Anderson, John E. Bowers, Tobias J. Kippenberg

Abstract: The past decade has witnessed major advances in the development of microresonator-based frequency combs (microcombs) that are broadband optical frequency combs with repetition rates in the millimeter-wave to microwave domain. Integrated microcombs can be manufactured using wafer-scale process and have been applied in numerous applications. Most of these advances are based on the harnessing of diss… ▽ More The past decade has witnessed major advances in the development of microresonator-based frequency combs (microcombs) that are broadband optical frequency combs with repetition rates in the millimeter-wave to microwave domain. Integrated microcombs can be manufactured using wafer-scale process and have been applied in numerous applications. Most of these advances are based on the harnessing of dissipative Kerr solitons (DKS) in optical microresonators with anomalous group velocity dispersion (GVD). However, microcombs can also be generated with normal GVD using dissipative localized structures that are referred to as "dark pulse", "switching wave" or "platicon". Importantly, as most materials feature intrinsic normal GVD, the requirement of dispersion engineering is significantly relaxed for platicon generation. Therefore while DKS microcombs require particular designs and fabrication processes, platicon microcombs can be readily built using standard CMOS-compatible platforms such as thin-film (i.e. typically below 300 nm) Si3N4. Yet laser self-injection locking that has been recently used to create highly compact integrated DKS microcomb modules has not been demonstrated for platicons. Here we report the first fully integrated platicon microcomb operating at a microwave-K-band repetition rate. Using laser self-injection locking of a DFB laser edge-coupled to a Si3N4 microresonator, platicons are electrically initiated and stably maintained, enabling a compact microcomb module without any complex control. We further characterize the phase noise of the platicon repetition rate and the pum** laser. The observation of self-injection-locked platicons facilitates future wide adoption of microcombs as a build-in block in standard photonic integrated architectures via commercial foundry service. △ Less

Submitted 26 July, 2021; v1 submitted 13 March, 2021; originally announced March 2021.

Laser soliton microcombs on silicon

Authors: Chao Xiang, Junqiu Liu, Joel Guo, Lin Chang, Rui Ning Wang, Wenle Weng, Jonathan Peters, Weiqiang Xie, Zeyu Zhang, Johann Riemensberger, Jennifer Selvidge, Tobias J. Kippenberg, John E. Bowers

Abstract: Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent LiDAR, or photonics-assisted signal processing. Here, we report on heterogeneously integra… ▽ More Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent LiDAR, or photonics-assisted signal processing. Here, we report on heterogeneously integrated laser soliton microcombs combining both InP/Si semiconductor lasers and ultralow-loss silicon nitride microresonators on monolithic silicon substrate. Thousands of devices are produced from a single wafer using standard CMOS techniques. Using on-chip electrical control of the microcomb-laser relative optical phase, these devices can output single-soliton microcombs with 100 GHz repetition rate. Our approach paves the way for large-volume, low-cost manufacturing of chip-based frequency combs for next-generation high-capacity transceivers, datacenters, space and mobile platforms. △ Less

Submitted 3 March, 2021; originally announced March 2021.

Artificial coherent states of light by multi-photon interference in a single-photon stream

Authors: P. Steindl, H. Snijders, G. Westra, E. Hissink, K. Iakovlev, S. Polla, J. A. Frey, J. Norman, A. C. Gossard, J. E. Bowers, D. Bouwmeester, W. Löffler

Abstract: Coherent optical states consist of a quantum superposition of different photon number (Fock) states, but because they do not form an orthogonal basis, no photon number states can be obtained from it by linear optics. Here we demonstrate the reverse, by manipulating a random continuous single-photon stream using quantum interference in an optical Sagnac loop, we create engineered quantum states of… ▽ More Coherent optical states consist of a quantum superposition of different photon number (Fock) states, but because they do not form an orthogonal basis, no photon number states can be obtained from it by linear optics. Here we demonstrate the reverse, by manipulating a random continuous single-photon stream using quantum interference in an optical Sagnac loop, we create engineered quantum states of light with tunable photon statistics, including approximate weak coherent states. We demonstrate this experimentally using a true single-photon stream produced by a semiconductor quantum dot in an optical microcavity, and show that we can obtain light with $g^{(2)}(0)\rightarrow1$ in agreement with our theory, which can only be explained by quantum interference of at least 3 photons. The produced artificial light states are, however, much more complex than coherent states, containing quantum entanglement of photons, making them a resource for multi-photon entanglement. △ Less

Submitted 11 April, 2021; v1 submitted 29 October, 2020; originally announced October 2020.

Comments: 6 pages + supplemental material

Journal ref: Phys. Rev. Lett. 126, 143601 (2021)

Integrated photonic interposers for processing octave-spanning microresonator frequency combs

Authors: Ashutosh Rao, Gregory Moille, Xiyuan Lu, Daron A. Westly, Davide Sacchetto, Michael Geiselmann, Michael Zervas, Scott B. Papp, John Bowers, Kartik Srinivasan

Abstract: Microcombs - optical frequency combs generated in microresonators - have advanced tremendously in the last decade, and are advantageous for applications in frequency metrology, navigation, spectroscopy, telecommunications, and microwave photonics. Crucially, microcombs offer the prospect of fully integrated miniaturized optical systems with unprecedented reductions in cost, size, weight, and power… ▽ More Microcombs - optical frequency combs generated in microresonators - have advanced tremendously in the last decade, and are advantageous for applications in frequency metrology, navigation, spectroscopy, telecommunications, and microwave photonics. Crucially, microcombs offer the prospect of fully integrated miniaturized optical systems with unprecedented reductions in cost, size, weight, and power. However, this goal has been consistently hindered by the use of bulk free-space and fiber-optic components to process microcombs, limiting form factors to the table-top. Here, we address this challenge by introducing an integrated photonics interposer architecture to process microcombs and replace discrete components. Taking microcomb-based optical frequency synthesis in the telecom C-band around 1550 nm as our target application, we develop an interposer architecture that collects, routes, and interfaces octave-wide optical signals between photonic chiplets and heterogeneously integrated devices that constitute the synthesizer. We have implemented the octave spanning spectral filtering of a microcomb, central to the interposer, in the popular silicon nitride photonic platform, and have confirmed the requisite performance of the individual elements of the interposer. Moreover, we show that the thick silicon nitride needed for bright dissipative Kerr soliton generation can be integrated with the comparatively thin silicon nitride interposer layer through octave-bandwidth adiabatic evanescent coupling, indicating a path towards future system-level consolidation. Our interposer architecture addresses the immediate need for on-chip microcomb processing to successfully miniaturize microcomb systems. As microcombs and integrated devices evolve, our approach can be readily adapted to other metrology-grade applications based on optical atomic clocks and high-precision navigation and spectroscopy. △ Less

Submitted 30 September, 2020; originally announced October 2020.

Correlated self-heterodyne method for ultra-low-noise laser linewidth measurements

Authors: Zhiquan Yuan, Heming Wang, Peng Liu, Bohan Li, Boqiang Shen, Maodong Gao, Lin Chang, Warren **, Avi Feshali, Mario Paniccia, John Bowers, Kerry Vahala

Abstract: Narrow-linewidth lasers are important to many applications spanning precision metrology to sensing systems. Characterization of these lasers requires precise measurements of their frequency noise spectra. Here we demonstrate a correlated self-heterodyne (COSH) method capable of measuring frequency noise as low as 0.01 Hz$^2$/Hz at 1 MHz offset frequency. The measurement setup is characterized by b… ▽ More Narrow-linewidth lasers are important to many applications spanning precision metrology to sensing systems. Characterization of these lasers requires precise measurements of their frequency noise spectra. Here we demonstrate a correlated self-heterodyne (COSH) method capable of measuring frequency noise as low as 0.01 Hz$^2$/Hz at 1 MHz offset frequency. The measurement setup is characterized by both commercial and lab-built lasers, and features low optical power requirements, fast acquisition time and high intensity noise rejection. △ Less

Submitted 16 June, 2022; v1 submitted 19 October, 2020; originally announced October 2020.

Comments: 10 pages, 6 figures

Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-$Q$ microresonators

Authors: Warren **, Qi-Fan Yang, Lin Chang, Boqiang Shen, Heming Wang, Mark A. Leal, Lue Wu, Avi Feshali, Mario Paniccia, Kerry J. Vahala, John E. Bowers

Abstract: Driven by narrow-linewidth bench-top lasers, coherent optical systems spanning optical communications, metrology and sensing provide unrivalled performance. To transfer these capabilities from the laboratory to the real world, a key missing ingredient is a mass-produced integrated laser with superior coherence. Here, we bridge conventional semiconductor lasers and coherent optical systems using CM… ▽ More Driven by narrow-linewidth bench-top lasers, coherent optical systems spanning optical communications, metrology and sensing provide unrivalled performance. To transfer these capabilities from the laboratory to the real world, a key missing ingredient is a mass-produced integrated laser with superior coherence. Here, we bridge conventional semiconductor lasers and coherent optical systems using CMOS-foundry-fabricated microresonators with record high $Q$ factor over 260 million and finesse over 42,000. Five orders-of-magnitude noise reduction in the pump laser is demonstrated, and for the first time, fundamental noise below 1 Hz$^2$ Hz$^{-1}$ is achieved in an electrically-pumped integrated laser. Moreover, the same configuration is shown to relieve dispersion requirements for microcomb generation that have handicapped certain nonlinear platforms. The simultaneous realization of record-high $Q$ factor, highly coherent lasers and frequency combs using foundry-based technologies paves the way for volume manufacturing of a wide range of coherent optical systems. △ Less

Submitted 15 September, 2020; originally announced September 2020.

Comments: 19 pages, 11 figures

Ultraprecise optical-frequency stabilization with heterogeneous III-V/Si lasers

Authors: Liron Stern, Wei Zhang, Lin Chang, Joel Guo, Chao Xiang, Minh A. Tran, Duanni Huang, Jonathan D. Peters, David Kinghorn, John E. Bowers, Scott B. Papp

Abstract: Demand for low-noise, continuous-wave, frequency-tunable lasers based on semiconductor integrated photonics has been advancing in support of numerous applications. In particular, an important goal is to achieve narrow spectral linewidth, commensurate with bulk-optic or fiber-optic laser platforms. Here, we report on laser-frequency-stabilization experiments with a heterogeneously integrated III/V-… ▽ More Demand for low-noise, continuous-wave, frequency-tunable lasers based on semiconductor integrated photonics has been advancing in support of numerous applications. In particular, an important goal is to achieve narrow spectral linewidth, commensurate with bulk-optic or fiber-optic laser platforms. Here, we report on laser-frequency-stabilization experiments with a heterogeneously integrated III/V-Si widely tunable laser and a high-finesse, thermal-noise-limited photonic resonator. This hybrid architecture offers a chip-scale optical-frequency reference with an integrated linewidth of 60 Hz and a fractional frequency stability of 2.5e-13 at 1-second integration time. We explore the potential for stabilization with respect to a resonator with lower thermal noise by characterizing laser-noise contributions such as residual amplitude modulation and photodetection noise. Widely tunable, compact and integrated, cost effective, stable and narrow linewidth lasers are envisioned for use in various fields, including communication, spectroscopy, and metrology. △ Less

Submitted 4 July, 2020; originally announced July 2020.

Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon

Authors: Jennifer Selvidge, Justin Norman, Eamonn T. Hughes, Chen Shang, Daehwan Jung, Aidan A. Taylor, MJ Kennedy, Robert Herrick, John E. Bowers, Kunal Mukherjee

Abstract: Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non… ▽ More Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III-V layers and silicon and (2) precipitate and alloy hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed misfit dislocation trap** layer, we leverage these mechanical hardening effects to our advantage, successfully displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trap** layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trap** layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trap** layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits. △ Less

Submitted 4 August, 2020; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 9 pages, 6 figures

Journal ref: Appl. Phys. Lett. 117 (2020) 122101