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Ultrafast (10 GHz) mid-IR modulator based on ultra-fast electrical switching of the light-matter coupling
Authors:
Mario Malerba,
Stefano Pirotta,
Guy Aubin,
Luca Lucia,
Mathieu Jeannin,
Jean-Michel Manceau,
Adel Bousseksou,
Quyang Lin,
Jean-Francois Lampin,
Emilien Peytavit,
Stefano Barbieri,
Lianhe Li,
Giles Davies,
Edmund H. Linfield,
Raffaele Colombelli
Abstract:
We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast transition between weak and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device refle…
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We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast transition between weak and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device reflectivity. It is made of a semiconductor heterostructure enclosed in a judiciously designed array of metal-metal optical resonators, that - all-together - behave as an electrically tunable surface. At negative bias, it operates in the weak light-matter coupling regime. Upon application of an appropriate positive bias, the quantum wells populate with electrons and the device transitions to the strong-coupling regime. The modulator transmission keeps linear with input RF power in the 0dBm - 9dBm range. The increase of optical powers up to 25 mW exhibit a weak beginning saturation a little bit below.
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Submitted 26 June, 2024;
originally announced June 2024.
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Origin of optical nonlinearity in plasmonic semiconductor nanostructures
Authors:
Andrea Rossetti,
Huatian Hu,
Tommaso Venanzi,
Adel Bousseksou,
Federico De Luca,
Thomas Deckert,
Valeria Giliberti,
Marialilia Pea,
Isabelle Sagnes,
Gregoire Beaudoin,
Paolo Biagioni,
Enrico Baù,
Stefan A. Maier,
Andreas Tittl,
Daniele Brida,
Raffaele Colombelli,
Michele Ortolani,
Cristian Ciracì
Abstract:
The development of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics, which requires that the interacting waves propagate in transparent volumes for distances much longer than their wavelength. Here we present experimental evidence that optical nonlinearities in doped semiconductors are due to free-elect…
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The development of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics, which requires that the interacting waves propagate in transparent volumes for distances much longer than their wavelength. Here we present experimental evidence that optical nonlinearities in doped semiconductors are due to free-electron and their efficiency could exceed by several orders of magnitude that of conventional dielectric nonlinearities. Our experimental findings are supported by comprehensive computational results based on the hydrodynamic modeling, which naturally includes nonlocal effects, of the free-electron dynamics in heavily doped semiconductors. By studying third-harmonic generation from plasmonic nanoantenna arrays made out of heavily n-doped InGaAs with increasing levels of free-carrier density, we discriminate between hydrodynamic and dielectric nonlinearities. As a result, the value of maximum nonlinear efficiency as well as its spectral location can now be controlled by tuning the do** level. Having employed the common material platform InGaAs/InP that supports integrated waveguides, our findings pave the way for future exploitation of plasmonic nonlinearities in all-semiconductor photonic integrated circuits.
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Submitted 23 February, 2024;
originally announced February 2024.
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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
Authors:
Patrick Quach,
Arnaud Jollivet,
Andrey Babichev,
Nathalie Isac,
Martina Morassi,
Aristide Lemaitre,
Pavel Yunin,
Eric Frayssinet,
Philippe de Mierry,
Mathieu Jeannin,
Adel Bousseksou,
Raffaele Colombelli,
Maria Tchernycheva,
Yvon Cordier,
François Julien
Abstract:
We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride…
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We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride material. The detector exhibits a peak photocurrent at 5.7 THz (23.6 meV) with a responsivity of 0.1 mA/W at 10 K under surface normal irradiation through a 10 um period grating. The photocurrent persists up to 20 K.
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Submitted 14 April, 2022;
originally announced April 2022.
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Multiple vibro-polaritons formation from a thin polyethylene film embedded in a resonant mid-infrared cavity
Authors:
Mario Malerba,
Mathieu Jeannin,
Paul Goulain,
Adel Bousseksou,
Raffaele Colombelli,
Jean-Michel Manceau
Abstract:
We experimentally resolve the dispersion of multiple vibro-polariton modes issued from the strong coupling of different vibrational bands of the methylene group (CH2) in a 2.56$μ$m thick polyethylene film with the confined modes of a mid-infrared Fabry-Perot micro-cavity. We measure a Rabi frequency of 111 cm$^{-1}$ for the stretching doublet around 2950 cm$^{-1}$ and a Rabi frequency of 29 cm…
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We experimentally resolve the dispersion of multiple vibro-polariton modes issued from the strong coupling of different vibrational bands of the methylene group (CH2) in a 2.56$μ$m thick polyethylene film with the confined modes of a mid-infrared Fabry-Perot micro-cavity. We measure a Rabi frequency of 111 cm$^{-1}$ for the stretching doublet around 2950 cm$^{-1}$ and a Rabi frequency of 29 cm$^{-1}$ for the scissoring doublet around 1460 cm$^{-1}$. This simple experimental approach offers the possibility to accurately fit the measured molecular film dielectric function. We show that the polariton dispersion and Rabi splitting can be precisely predicted from numerical simulations, offering a valuable tool for the design of strongly coupled system and the development of novel molecular films with crystalline organization.
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Submitted 5 August, 2021;
originally announced August 2021.
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A "Janus" double sided mid-IR photodetector based on a MIM architecture
Authors:
Mario Malerba,
Mathieu Jeannin,
Stefano Pirotta,
Lianhe Li,
Alexander Giles Davies,
Edmund Linfield,
Adel Bousseksou,
Jean-Michel Manceau,
Raffaele Colombelli
Abstract:
We present a mid-IR ($λ\approx$ 8.3 $μ$m) quantum well infrared photodetector (QWIP) fabricated on a mid-IR transparent substrate, allowing photodetection with illumination from either the front surface or through the substrate. The device is based on a 400 nm-thick GaAs/AlGaAs semiconductor QWIP heterostructure enclosed in a metal-insulator-metal (MIM) cavity and hosted on a mid-IR transparent Zn…
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We present a mid-IR ($λ\approx$ 8.3 $μ$m) quantum well infrared photodetector (QWIP) fabricated on a mid-IR transparent substrate, allowing photodetection with illumination from either the front surface or through the substrate. The device is based on a 400 nm-thick GaAs/AlGaAs semiconductor QWIP heterostructure enclosed in a metal-insulator-metal (MIM) cavity and hosted on a mid-IR transparent ZnSe substrate. Metallic stripes are symmetrically patterned by e-beam lithography on both sides of the active region. The detector spectral coverage spans from $λ\approx 7.15$ $μ$m to $λ\approx 8.7$ $μ$m by changing the stripe width L - from L = 1.0 $μ$m to L = 1.3 $μ$m - thus frequency-tuning the optical cavity mode. Both micro-FTIR passive optical characterizations and photocurrent measurements of the two-port system are carried out. They reveal a similar spectral response for the two detector ports, with an experimentally measured T$_{BLIP}$ of $\approx$ 200K.
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Submitted 5 August, 2021;
originally announced August 2021.
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Ultra-fast amplitude modulation of mid-IR free-space beams at room-temperature
Authors:
Stefano Pirotta,
Ngoc-Linh Tran,
Giorgio Biasiol,
Arnaud Jollivet,
Paul Crozat,
Jean-Michel Manceau,
Adel Bousseksou,
Raffaele Colombelli
Abstract:
Applications relying on mid-infrared radiation (Mid-IR, $λ\sim$ 3-30 $μ$m) have progressed at a very rapid pace in recent years, stimulated by scientific and technological breakthroughs. Mid-IR cameras have propelled the field of thermal imaging. And the invention of the quantum cascade laser (QCL) has been a milestone, making compact, semiconductor-based mid-IR lasers available to a vast range of…
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Applications relying on mid-infrared radiation (Mid-IR, $λ\sim$ 3-30 $μ$m) have progressed at a very rapid pace in recent years, stimulated by scientific and technological breakthroughs. Mid-IR cameras have propelled the field of thermal imaging. And the invention of the quantum cascade laser (QCL) has been a milestone, making compact, semiconductor-based mid-IR lasers available to a vast range of applications. All the recent breakthrough advances stemmed from the development of a transformative technology. In addition to the generation and detection of light, a key functionality for most photonics systems is the electrical control of the amplitude and/or phase of an optical beam at ultra-fast rates (GHz or more). However, standalone, broadband, integrated modulators are missing from the toolbox of present mid-IR photonics integrated circuits and systems developers. We have developed a free-space amplitude modulator for mid-IR radiation ($λ\sim$ 10 $μ$m) that can operate up to at least 1.5 GHz (-3dB cut-off at $\sim$ 750 MHz) and at room-temperature. The device relies on a semiconductor hetero-structure enclosed in a judiciously designed metal-metal optical resonator. At zero bias, it operates in the strong light-matter coupling regime up to 300K. By applying an appropriate bias, the device transitions to the weak coupling regime. The large change in reflectivity due to the disappearance of the polaritonic states is exploited to modulate the intensity of a mid-IR continuous-wave laser up to speeds of more than 1.5 GHz.
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Submitted 22 June, 2020;
originally announced June 2020.
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III-V on CaF2: a possible waveguiding platform for mid-IR photonic devices
Authors:
Ngoc-Linh Tran,
Mario Malerba,
Anne Talneau,
Giorgio Biasiol,
Oussama Ouznali,
Adel Bousseksou,
Jean-Michel Manceau,
Raffaele Colombelli
Abstract:
We developed a technique that enables to replace a metallic waveguide cladding with a low-index (n $\sim$ 1.4) material - CaF2 or BaF2 - that in addition is transparent from the mid-IR up to the visible range: elevated confinement is preserved while introducing an optical entryway through the substrate. Replacing the metallic backplane also allows double-side patterning of the active region. Using…
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We developed a technique that enables to replace a metallic waveguide cladding with a low-index (n $\sim$ 1.4) material - CaF2 or BaF2 - that in addition is transparent from the mid-IR up to the visible range: elevated confinement is preserved while introducing an optical entryway through the substrate. Replacing the metallic backplane also allows double-side patterning of the active region. Using this approach, we demonstrate strong light-matter coupling between an intersubband transition (lambda $\sim$ 10 microns) and a dispersive resonator, at 300 K and at 78 K. Finally, we evaluate the potential of this approach as a platform for waveguiding in the mid-IR spectral range, with numerical simulations that reveal losses in the 1-10 cm$^{-1}$ range.
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Submitted 17 December, 2018;
originally announced December 2018.
