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Characterization of the transient response of diamond sensors to collimated, sub-ps, 1 GeV electron bunches
Authors:
Silvano Bassanese,
Luciano Bosisio,
Giuseppe Cautero,
Simone Di Mitri,
Mario Ferianis,
Alice Gabrielli,
Dario Giuressi,
Yifan **,
Livio Lanceri,
Marco Marich,
Ralf Hendrik Menk,
Lorenzo Vitale
Abstract:
Diamond sensors (DS) are widely used as solid-state particle detectors, beam loss monitors, and dosimeters in high-radiation environments, e.g., particle colliders. We have calibrated our DS with steady $β$- and X-radiation, spanning a dose rate in the range 0.1-100 mGy/s. Here, we report the first systematic characterization of transient responses of DS to collimated, sub-picosecond, 1 GeV electr…
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Diamond sensors (DS) are widely used as solid-state particle detectors, beam loss monitors, and dosimeters in high-radiation environments, e.g., particle colliders. We have calibrated our DS with steady $β$- and X-radiation, spanning a dose rate in the range 0.1-100 mGy/s. Here, we report the first systematic characterization of transient responses of DS to collimated, sub-picosecond, 1 GeV electron bunches. These bunches, possessing a charge ranging from tens to hundreds of pC and a size from tens of microns to millimeters, are suitably provided by the FERMI electron linac in Trieste, Italy. The high density of charge carriers generated by ionization in the diamond bulk causes a transient modification of electrical properties of DS (e.g., resistance), which in turn affects the signal shape. We have modeled a two-step numerical approach, simulating the effects on the signal of both the evolution of charge carrier density in the diamond bulk and the changes in the circuit parameters. This approach interprets features observed in our experimental results to a great extent.
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Submitted 24 October, 2022;
originally announced October 2022.
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Performance of the diamond-based beam-loss monitor system of Belle II
Authors:
S. Bacher,
G. Bassi,
L. Bosisio,
G. Cautero,
P. Cristaudo,
M. Dorigo,
A. Gabrielli,
D. Giuressi,
K. Hara,
Y. **,
C. La Licata,
L. Lanceri,
R. Manfredi,
H. Nakayama,
K. R. Nakamura,
A. Natochii,
A. Paladino,
G. Rizzo,
L. Vitale,
H. Yin
Abstract:
We designed, constructed and have been operating a system based on single-crystal synthetic diamond sensors, to monitor the beam losses at the interaction region of the SuperKEKB asymmetric-energy electron-positron collider. The system records the radiation dose-rates in positions close to the inner detectors of the Belle II experiment, and protects both the detector and accelerator components aga…
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We designed, constructed and have been operating a system based on single-crystal synthetic diamond sensors, to monitor the beam losses at the interaction region of the SuperKEKB asymmetric-energy electron-positron collider. The system records the radiation dose-rates in positions close to the inner detectors of the Belle II experiment, and protects both the detector and accelerator components against destructive beam losses, by participating in the beam-abort system. It also provides complementary information for the dedicated studies of beam-related backgrounds. We describe the performance of the system during the commissioning of the accelerator and during the first physics data taking.
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Submitted 9 February, 2021;
originally announced February 2021.
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Calibration of diamond detectors for dosimetry in beam-loss monitoring
Authors:
G. Bassi,
L. Bosisio,
P. Cristaudo,
M. Dorigo,
A. Gabrielli,
Y. **,
C. La Licata,
L. Lanceri,
L. Vitale
Abstract:
Artificially-grown diamond crystals have unique properties that make them suitable as solid-state particle detectors and dosimeters in high-radiation environments. We have been using sensors based on single-crystal diamond grown by chemical vapour deposition for dosimetry and beam-loss monitoring at the SuperKEKB collider. Here we describe the assembly and the suite of test and calibration procedu…
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Artificially-grown diamond crystals have unique properties that make them suitable as solid-state particle detectors and dosimeters in high-radiation environments. We have been using sensors based on single-crystal diamond grown by chemical vapour deposition for dosimetry and beam-loss monitoring at the SuperKEKB collider. Here we describe the assembly and the suite of test and calibration procedures adopted to characterise the diamond-based detectors of this monitoring system. We report the results obtained on 28 detectors and assess the stability and uniformity of response of these devices.
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Submitted 25 May, 2021; v1 submitted 5 February, 2021;
originally announced February 2021.
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Performance of Thin Planar \textit{n-on-p} silicon pixels after HL-LHC radiation fluences
Authors:
A. Ducourthial,
M. Bomben,
G. Calderini,
R. Camacho,
L. D'Eramo,
I. Luise,
G. Marchiori,
M. Boscardin,
L. Bosisio,
G. Darbo,
G. -F. Dalla Betta,
G. Giacomini,
M. Meschini,
A. Messineo,
S. Ronchin,
N. Zorzi
Abstract:
The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130~$μ$m thick $n-on-p$ silicon pixel sensors which can withstand the expected large particle fluences at HL- LHC, while deliverin…
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The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130~$μ$m thick $n-on-p$ silicon pixel sensors which can withstand the expected large particle fluences at HL- LHC, while delivering data at high rate with excellent hit efficiency. Such sensors were tested on beam before and after irradiation both at CERN-SPS and at DESY, and their performances are presented in this paper. Beam test data indicate that these detectors are suited for all the layers where planar sensors are foreseen in the future ATLAS tracker: hit-efficiency is greater than 97\% for fluences $Φ\lesssim 7\times10^{15}\rm{n_{eq}/cm^2}$ and module power consumption is within the specified limits. Moreover, at a fluence $Φ= 1.3\times10^{16}\rm{n_{eq}/cm^2}$, hit-efficiency is still as high as 88\% and charge collection efficiency is about 30\%.
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Submitted 5 September, 2019; v1 submitted 16 October, 2018;
originally announced October 2018.
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First Measurements of Beam Backgrounds at SuperKEKB
Authors:
P. M. Lewis,
I. Jaegle,
H. Nakayama,
A. Aloisio,
F. Ameli,
M. Barrett,
A. Beaulieu,
L. Bosisio,
P. Branchini,
T. E. Browder,
A. Budano,
G. Cautero,
C. Cecchi,
Y. -T. Chen,
K. -N. Chu,
D. Cinabro,
P. Cristaudo,
S. de Jong,
R. de Sangro,
G. Finocchiaro,
J. Flanagan,
Y. Funakoshi,
M. Gabriel,
R. Giordano,
D. Giuressi
, et al. (45 additional authors not shown)
Abstract:
The high design luminosity of the SuperKEKB electron-positron collider is expected to result in challenging levels of beam-induced backgrounds in the interaction region. Properly simulating and mitigating these backgrounds is critical to the success of the Belle~II experiment. We report on measurements performed with a suite of dedicated beam background detectors, collectively known as BEAST II, d…
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The high design luminosity of the SuperKEKB electron-positron collider is expected to result in challenging levels of beam-induced backgrounds in the interaction region. Properly simulating and mitigating these backgrounds is critical to the success of the Belle~II experiment. We report on measurements performed with a suite of dedicated beam background detectors, collectively known as BEAST II, during the so-called Phase 1 commissioning run of SuperKEKB in 2016, which involved operation of both the high energy ring (HER) of 7 GeV electrons as well as the low energy ring (LER) of 4 GeV positrons. We describe the BEAST II detector systems, the simulation of beam backgrounds, and the measurements performed. The measurements include standard ones of dose rates versus accelerator conditions, and more novel investigations, such as bunch-by-bunch measurements of injection backgrounds and measurements sensitive to the energy spectrum and angular distribution of fast neutrons. We observe beam-gas, Touschek, beam-dust, and injection backgrounds. We do not observe significant synchrotron radiation, as expected. Measured LER beam-gas backgrounds and Touschek backgrounds in both rings are slightly elevated, on average three times larger than the levels predicted by simulation. HER beam-gas backgrounds are on on average two orders of magnitude larger than predicted. Systematic uncertainties and channel-to-channel variations are large, so that these excesses constitute only 1-2 sigma level effects. Neutron background rates are higher than predicted and should be studied further. We will measure the remaining beam background processes, due to colliding beams, in the imminent commissioning Phase 2. These backgrounds are expected to be the most critical for Belle II, to the point of necessitating replacement of detector components during the Phase 3 (full-luminosity) operation of SuperKEB.
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Submitted 5 February, 2018;
originally announced February 2018.
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The s-CVD Radiation Monitoring and Beam Abort System of the Belle-II Vertex Detector
Authors:
L. Bosisio,
C. La Licata,
L. Lanceri,
L. Vitale
Abstract:
The Belle-II VerteX Detector (VXD) is a 6 layers silicon tracker device that will cope with an unprecedented luminosity of 8 x 10^35 cm-2 s-1 achievable by the new SuperKEKB e+e- collider, now under commissioning at the KEK laboratory (Tsukuba, Japan). A radiation monitoring and beam abort system has been developed based on single-crystal s-CVD diamond sensors. The sensors will be placed in 20 key…
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The Belle-II VerteX Detector (VXD) is a 6 layers silicon tracker device that will cope with an unprecedented luminosity of 8 x 10^35 cm-2 s-1 achievable by the new SuperKEKB e+e- collider, now under commissioning at the KEK laboratory (Tsukuba, Japan). A radiation monitoring and beam abort system has been developed based on single-crystal s-CVD diamond sensors. The sensors will be placed in 20 key positions in the vicinity of the interaction region. The severe space limitations require a remote readout of the sensors. In this contribution we present the system design, along with the sensor characterisation procedure. We present also the preliminary results with the prototype system during the first SuperKEKB commissioning phase in February-June 2016.
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Submitted 18 November, 2017;
originally announced November 2017.
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Thin and edgeless sensors for ATLAS pixel detector upgrade
Authors:
Audrey Ducourthial,
Marco Bomben,
Giovanni Calderini,
Louis D'Eramo,
Giovanni Marchiori,
Ilaria Luise,
Alvise Bagolini,
Maurizio Boscardin,
Luciano Bosisio,
Giovanni Darbo,
Gian-Franco Dalla Betta,
Gabriele Giacomini,
Marco Meschini,
Alberto Messineo,
Sabina Ronchin,
Nicola Zorzi
Abstract:
To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is mi…
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To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. In this paper we report on two productions, a first one consisting of 200 μm thick n-on-p sensors with active edge, a second one composed of 100 and 130 μm thick n-on-p sensors. Those sensors have been tested on beam, both at CERN-SPS and at DESY and their performance before and after irradiation will be presented.
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Submitted 10 October, 2017;
originally announced October 2017.
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Performance of active edge pixel sensors
Authors:
Marco Bomben,
Audrey Ducourthial,
Alvise Bagolini,
Maurizio Boscardin,
Luciano Bosisio,
Giovanni Calderini,
Louis D'Eramo,
Gabriele Giacomini,
Giovanni Marchiori,
Nicola Zorzi,
André Rummler,
Jens Weingarten
Abstract:
To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin…
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To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin planar n-on-p pixel sensors with active edge have been designed and produced by LPNHE and FBK foundry. Two detector module prototypes, consisting of pixel sensors connected to FE-I4B readout chips, have been tested with beams at CERN and DESY. In this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit-efficiency also at the detector edge, even in presence of guard rings.
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Submitted 4 April, 2017; v1 submitted 6 February, 2017;
originally announced February 2017.
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Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
Authors:
Marco Bomben,
Alvise Bagolini,
Maurizio Boscardin,
Luciano Bosisio,
Giovanni Calderini,
Jacques Chauveau,
Audrey Ducourthial,
Gabriele Giacomini,
Giovanni Marchiori,
Nicola Zorzi
Abstract:
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel senso…
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In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.
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Submitted 7 September, 2016;
originally announced September 2016.
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Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades
Authors:
Gabriele Giacomini,
Alvise Bagolini,
Marco Bomben,
Maurizio Boscardin,
Luciano Bosisio,
Giovanni Calderini,
Jacques Chauveau,
Alessandro La Rosa,
Giovanni Marchiori,
Nicola Zorzi
Abstract:
In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATL…
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In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these demands. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.
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Submitted 2 December, 2013;
originally announced December 2013.
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Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
Authors:
M. Bomben,
A. Bagolini,
M. Boscardin,
L. Bosisio,
G. Calderini,
J. Chauveau,
G. Giacomini,
A. La Rosa,
G. Marchori,
N. Zorzi
Abstract:
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar…
▽ More
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.
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Submitted 15 November, 2013;
originally announced November 2013.
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Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
Authors:
M. Bomben,
A. Bagolini,
M. Boscardin,
L. Bosisio,
G. Calderini,
J. Chauveau,
G. Giacomini,
A. La Rosa,
G. Marchori,
N. Zorzi
Abstract:
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar…
▽ More
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.
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Submitted 7 November, 2013;
originally announced November 2013.
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Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
Authors:
G. Calderini,
A. Bagolini,
M. Bomben,
M. Boscardin,
L. Bosisio,
J. Chauveau,
G. Giacomini,
A. La Rosa,
G. Marchiori,
N. Zorzi
Abstract:
In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to…
▽ More
In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FTK.
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Submitted 21 October, 2013;
originally announced October 2013.
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SuperB Technical Design Report
Authors:
SuperB Collaboration,
M. Baszczyk,
P. Dorosz,
J. Kolodziej,
W. Kucewicz,
M. Sapor,
A. Jeremie,
E. Grauges Pous,
G. E. Bruno,
G. De Robertis,
D. Diacono,
G. Donvito,
P. Fusco,
F. Gargano,
F. Giordano,
F. Loddo,
F. Loparco,
G. P. Maggi,
V. Manzari,
M. N. Mazziotta,
E. Nappi,
A. Palano,
B. Santeramo,
I. Sgura,
L. Silvestris
, et al. (384 additional authors not shown)
Abstract:
In this Technical Design Report (TDR) we describe the SuperB detector that was to be installed on the SuperB e+e- high luminosity collider. The SuperB asymmetric collider, which was to be constructed on the Tor Vergata campus near the INFN Frascati National Laboratory, was designed to operate both at the Upsilon(4S) center-of-mass energy with a luminosity of 10^{36} cm^{-2}s^{-1} and at the tau/ch…
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In this Technical Design Report (TDR) we describe the SuperB detector that was to be installed on the SuperB e+e- high luminosity collider. The SuperB asymmetric collider, which was to be constructed on the Tor Vergata campus near the INFN Frascati National Laboratory, was designed to operate both at the Upsilon(4S) center-of-mass energy with a luminosity of 10^{36} cm^{-2}s^{-1} and at the tau/charm production threshold with a luminosity of 10^{35} cm^{-2}s^{-1}. This high luminosity, producing a data sample about a factor 100 larger than present B Factories, would allow investigation of new physics effects in rare decays, CP Violation and Lepton Flavour Violation. This document details the detector design presented in the Conceptual Design Report (CDR) in 2007. The R&D and engineering studies performed to arrive at the full detector design are described, and an updated cost estimate is presented.
A combination of a more realistic cost estimates and the unavailability of funds due of the global economic climate led to a formal cancelation of the project on Nov 27, 2012.
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Submitted 24 June, 2013;
originally announced June 2013.
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Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade
Authors:
M. Bomben,
A. Bagolini,
M. Boscardin,
L. Bosisio,
G. Calderini,
J. Chauveau,
G. Giacomini,
A. La Rosa,
G. Marchori,
N. Zorzi
Abstract:
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar p…
▽ More
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the "active edge" concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.
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Submitted 15 February, 2013; v1 submitted 14 December, 2012;
originally announced December 2012.
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Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades
Authors:
M. Bomben,
A. Bagolini,
M. Boscardin,
L. Bosisio,
G. Calderini,
J. Chauveau,
G. Giacomini,
A. La Rosa,
G. Marchori,
N. Zorzi
Abstract:
The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably d…
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The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of $1 \times 10^{15} {\rm n_{eq}}/{\rm cm}^2$ comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb$^{-1}$) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.
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Submitted 18 February, 2013; v1 submitted 22 November, 2012;
originally announced November 2012.
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Characterization of 3D-DDTC detectors on p-type substrates
Authors:
G. -F. Dalla Betta,
M. Boscardin,
L. Bosisio,
G. Darbo,
P. Gabos,
C. Gemme,
M. Koehler,
A. La Rosa,
U. Parzefall,
H. Pernegger,
C. Piemonte,
M. Povoli,
I. Rachevskaia,
S. Ronchin,
L. Wiik,
A. Zoboli,
N. Zorzi
Abstract:
We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.
We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.
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Submitted 25 November, 2009;
originally announced November 2009.
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Study of the Radiation Hardness of Irradiated AToM Front-End Chips of the BaBar Silicon Vertex Tracker
Authors:
G. Calderini,
S. Bettarini,
M. Bondioli,
L. Bosisio,
S. Dittongo,
F. Forti,
M. A. Giorgi
Abstract:
The radiation hardness of the AToM chips of the BaBar Silicon Vertex Tracker has been investigated by means of irradiations with photons from a 60Co source and 0.9 GeV electrons. The increase in noise and the decrease in gain of the amplifier have been measured as a function of the applied capacitive load and the absorbed dose. Different beam intensities have been used to study the effect of dif…
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The radiation hardness of the AToM chips of the BaBar Silicon Vertex Tracker has been investigated by means of irradiations with photons from a 60Co source and 0.9 GeV electrons. The increase in noise and the decrease in gain of the amplifier have been measured as a function of the applied capacitive load and the absorbed dose. Different beam intensities have been used to study the effect of different dose rates to the AToM radiation damage. The chip digital functionalities have been tested up to a dose of 5.5 Mrads for the 60Co photons and 9 Mrads for the 0.9 GeV electrons. In addition a pedestal shift for the irradiated channels has been observed in the test with electrons but is not present in the irradiation with photons. This effect reproduces qualitatively the behavior observed since 2002 in the front-end electronics of the installed BaBar Silicon Vertex Tracker. After some investigation of the chip layout, this peculiar behavior could be associated to radiation damage in a well-identified component of the AToM. The results of the radiation tests are presented and used to extrapolate the performance and lifetime of the installed detector in the next few years.
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Submitted 22 November, 2004;
originally announced November 2004.
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Measurement of the Charge Collection Efficiency after Heavy Non-Uniform Irradiation in BaBar Silicon Detectors
Authors:
S. Bettarini,
M. Bondioli,
L. Bosisio,
G. Calderini,
C. Campagnari,
S. Dittongo,
F. Forti,
M. A. Giorgi,
G. Marchiori,
G. Rizzo
Abstract:
We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT) after heavy non-uniform irradiation. A full SVT module with the front-end electronics connected has been irradiated with a 0.9 GeV electron beam up to a peak flu…
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We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT) after heavy non-uniform irradiation. A full SVT module with the front-end electronics connected has been irradiated with a 0.9 GeV electron beam up to a peak fluence of 3.5 x 10^14 e^-/cm^2, well beyond the level causing substrate type inversion. We irradiated one of the two sensors composing the module with a non-uniform profile with sigma=1.4 mm that simulates the conditions encountered in the BaBar experiment by the modules intersecting the horizontal machine plane. The position dependence of the charge collection properties and the depletion voltage have been investigated in detail using a 1060 nm LED and an innovative measuring technique based only on the digital output of the chip.
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Submitted 6 April, 2005; v1 submitted 19 November, 2004;
originally announced November 2004.
