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Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices
Authors:
Bejoys Jacob,
Filipe Camarneiro,
Jérôme Borme,
Oleksandr Bondarchuk,
Jana B. Nieder,
Bruno Romeira
Abstract:
Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and cap** dielectric layer can best reproducibly protect the crystal surface of I…
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Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and cap** dielectric layer can best reproducibly protect the crystal surface of III-Vs, while being compatible with readily available plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low frequency plasma enhanced chemical deposition. Here, the sulfurized GaAs surfaces, the high level of hydrogen ions and the low frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars. We observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity for dry etched GaAs nanopillars. We achieve robust, stable and long-term passivated nanopillar surfaces which creates expectations for remarkable high internal quantum efficiency (IQE>0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors and solar cells.
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Submitted 30 June, 2022;
originally announced June 2022.
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A Strategic Approach to Advance Magnet Technology for Next Generation Colliders
Authors:
G. Ambrosio,
K. Amm,
M. Anerella,
G. Apollinari,
D. Arbelaez,
B. Auchmann,
S. Balachandran,
M. Baldini,
A. Ballarino,
S. Barua,
E. Barzi,
A. Baskys,
C. Bird,
J. Boerme,
E. Bosque,
L. Brouwer,
S. Caspi,
N. Cheggour,
G. Chlachidze,
L. Cooley,
D. Davis,
D. Dietderich,
J. DiMarco,
L. English,
L. Garcia Fajardo
, et al. (52 additional authors not shown)
Abstract:
Colliders are built on a foundation of superconducting magnet technology that provides strong dipole magnets to maintain the beam orbit and strong focusing magnets to enable the extraordinary luminosity required to probe physics at the energy frontier. The dipole magnet strength plays a critical role in dictating the energy reach of a collider, and the superconducting magnets are arguably the domi…
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Colliders are built on a foundation of superconducting magnet technology that provides strong dipole magnets to maintain the beam orbit and strong focusing magnets to enable the extraordinary luminosity required to probe physics at the energy frontier. The dipole magnet strength plays a critical role in dictating the energy reach of a collider, and the superconducting magnets are arguably the dominant cost driver for future collider facilities. As the community considers opportunities to explore new energy frontiers, the importance of advanced magnet technology - both in terms of magnet performance and in the magnet technology's potential for cost reduction - is evident, as the technology status is essential for informed decisions on targets for physics reach and facility feasibility.
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Submitted 26 March, 2022;
originally announced March 2022.
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Room temperature two terminal tunnel magnetoresistance in lateral graphene transistor
Authors:
C. I. L. de Araujo,
H. A. Teixeira,
O. O. Toro,
C. Liao,
J. Borme,
L. C. Benetti,
D. Schafer,
I. S. Brandt,
R. Ferreira,
P. Alpuim,
P. P. Freitas,
A. A. Pasa
Abstract:
We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor, produced using a standard large-scale microfabrication process. The high spin diffusion length of pristine graphene in the channel, measured both directly and by the H…
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We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor, produced using a standard large-scale microfabrication process. The high spin diffusion length of pristine graphene in the channel, measured both directly and by the Hanle effect, and the tuning of relation between electrode resistance area present in the device architecture, allowed us to observe local tunnel magnetoresistance at room temperature, a new finding for this type of device. Results also indicate that while pure spin currents are less sensitive to temperature variations, spin-polarized current switching by external voltage is more efficient, due to a combination of the Rashba effect and change in carrier mobility by Fermi level shift
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Submitted 20 November, 2021;
originally announced November 2021.
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Superior ultra-transparent broadband terahertz polarizers by nanoimprint lithography
Authors:
Alexandre Chícharo,
Tatiana G. Rappoport,
Chun-Da Liao,
Jérôme Borme,
Nuno M. R. Peres,
Pedro Alpuim
Abstract:
We report the largest broadband terahertz (THz) polarizer based on a flexible ultra-transparent cyclic olefin copolymer (COC). The COC polarizers were fabricated by nanoimprint soft lithography with the lowest reported pitch of 2 or 3 micrometers and depth of 3 micrometers and sub-wavelength Au bilayer wire grid. Fourier Transform Infrared spectroscopy in a large range of 0.9 -20 THz shows transmi…
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We report the largest broadband terahertz (THz) polarizer based on a flexible ultra-transparent cyclic olefin copolymer (COC). The COC polarizers were fabricated by nanoimprint soft lithography with the lowest reported pitch of 2 or 3 micrometers and depth of 3 micrometers and sub-wavelength Au bilayer wire grid. Fourier Transform Infrared spectroscopy in a large range of 0.9 -20 THz shows transmittance of bulk materials such as doped and undoped Si and polymers. COC polarizers present more than doubled transmission intensity and larger transmitting band when compared to Si. COC polarizers present superior performance when compared to Si polarizers, with extinctions ratios of at least 4.4 dB higher and registered performance supported by numerical simulations. Fabricated Si and COC polarizers' show larger operation gap when compared to a commercial polarizer. Fabrication of these polarizers can be easily up-scaled which certainly meets functional requirements for many THz devices and applications, such as high transparency, lower cost fabrication and flexible material.
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Submitted 19 February, 2021;
originally announced February 2021.
