Showing 1–1 of 1 results for author: Blauvelt, H A
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OH absorption in on-chip high-Q resonators
Authors:
Lue Wu,
Maodong Gao,
**-Yu Liu,
Hao-**g Chen,
Kellan Colburn,
Henry A. Blauvelt,
Kerry J. Vahala
Abstract:
Thermal silica is a common dielectric used in all silicon-photonic circuits. And bound hydroxyl ions (Si-OH) can provide a significant component of optical loss in this material on account of the wet nature of the thermal oxidation process. A convenient way to quantify this loss relative to other mechanisms is through OH-absorption at 1380 nm. Here, using ultra-high-Q thermal-silica wedge microres…
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Thermal silica is a common dielectric used in all silicon-photonic circuits. And bound hydroxyl ions (Si-OH) can provide a significant component of optical loss in this material on account of the wet nature of the thermal oxidation process. A convenient way to quantify this loss relative to other mechanisms is through OH-absorption at 1380 nm. Here, using ultra-high-Q thermal-silica wedge microresonators, the OH absorption loss peak is measured and distinguished from the scattering loss base line over a wavelength range from 680 nm to 1550 nm. Record-high on-chip resonator Q factors are observed for near-visible and visible wavelengths, and the absorption limited Q factor is as high as 8 billion in the telecom band. OH ion content level around 2.4 ppm (weight) is inferred from both Q measurements and by Secondary Ion Mass Spectroscopy (SIMS) depth profiling.
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Submitted 31 March, 2023;
originally announced March 2023.
