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Properties of donor qubits in ZnO formed by indium ion implantation
Authors:
Xingyi Wang,
Christian Zimmermann,
Michael Titze,
Vasileios Niaouris,
Ethan R. Hansen,
Samuel H. D'Ambrosia,
Lasse Vines,
Edward S. Bielejec,
Kai-Mei C. Fu
Abstract:
Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, c…
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Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory.
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Submitted 14 June, 2023; v1 submitted 10 December, 2022;
originally announced December 2022.
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Large-scale optical characterization of solid-state quantum emitters
Authors:
Madison Sutula,
Ian Christen,
Eric Bersin,
Michael P. Walsh,
Kevin C. Chen,
Justin Mallek,
Alexander Melville,
Michael Titze,
Edward S. Bielejec,
Scott Hamilton,
Danielle Braje,
P. Benjamin Dixon,
Dirk R. Englund
Abstract:
Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. In this work, we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of color centers. We first demonstrate the ability to track color center…
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Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. In this work, we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of color centers. We first demonstrate the ability to track color centers by registering them to a fabricated machine-readable global coordinate system, enabling systematic comparison of the same color center sites over many experiments. We then implement resonant photoluminescence excitation in a widefield cryogenic microscope to parallelize resonant spectroscopy, achieving two orders of magnitude speed-up over confocal microscopy. Finally, we demonstrate automated chip-scale characterization of color centers and devices at room temperature, imaging thousands of microscope fields of view. These tools will enable accelerated identification of useful quantum emitters at chip-scale, enabling advances in scaling up color center platforms for quantum information applications, materials science, and device design and characterization.
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Submitted 24 October, 2022;
originally announced October 2022.
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Directional Detection of Dark Matter Using Solid-State Quantum Sensing
Authors:
Reza Ebadi,
Mason C. Marshall,
David F. Phillips,
Johannes Cremer,
Tao Zhou,
Michael Titze,
Pauli Kehayias,
Maziar Saleh Ziabari,
Nazar Delegan,
Surjeet Rajendran,
Alexander O. Sushkov,
F. Joseph Heremans,
Edward S. Bielejec,
Martin V. Holt,
Ronald L. Walsworth
Abstract:
Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high…
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Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high-density target material. A detector of this type operates in a hybrid mode. The WIMP or neutrino-induced nuclear recoil is detected using real-time charge, phonon, or photon collection. The directional signal, however, is imprinted as a durable sub-micron damage track in the lattice structure. This directional signal can be read out by a variety of atomic physics techniques, from point defect quantum sensing to x-ray microscopy. In this white paper, we present the detector principle and review the status of the experimental techniques required for directional readout of nuclear recoil tracks. Specifically, we focus on diamond as a target material; it is both a leading platform for emerging quantum technologies and a promising component of next-generation semiconductor electronics. Based on the development and demonstration of directional readout in diamond over the next decade, a future WIMP detector will leverage or motivate advances in multiple disciplines towards precision dark matter and neutrino physics.
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Submitted 14 June, 2023; v1 submitted 11 March, 2022;
originally announced March 2022.
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Imaging dark charge emitters in diamond via carrier-to-photon conversion
Authors:
Artur Lozovoi,
Gyorgy Vizkelethy,
Edward Bielejec,
Carlos A. Meriles
Abstract:
The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point defects the material can host. Here we monitor the fluorescence from a negatively charged nitrogen-vacancy (NV-) center in diamond as we illuminate its vicinity…
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The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point defects the material can host. Here we monitor the fluorescence from a negatively charged nitrogen-vacancy (NV-) center in diamond as we illuminate its vicinity. Cyclic charge state conversion of neighboring point defects sensitive to the excitation beam leads to a position-dependent stream of photo-generated carriers whose capture by the probe NV- leads to a fluorescence change. This "charge-to-photon" conversion scheme allows us to image other individual point defects surrounding the probe NV, including non-fluorescent "single-charge emitters" that would otherwise remain unnoticed. Given the ubiquity of color center photo-chromism, this strategy may likely find extensions to material systems other than diamond.
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Submitted 13 January, 2022;
originally announced January 2022.
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Towards Deterministic Creation of Single Photon Sources in Diamond using In-Situ Ion Counting
Authors:
M. Titze,
H. Byeon,
A. R. Flores,
J. Henshaw,
C. T. Harris,
A. M. Mounce,
E. S. Bielejec
Abstract:
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location…
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We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location, referred to as timed implantation in this paper. This process is dominated by Poisson statistics resulting in large errors for low number of implanted ions. Instead, we use in-situ detection to measure the number of ions arriving at the substrate resulting in a two-fold reduction in the error on the number of implanted ions used to generate a single optically active silicon vacancy (SiV) defect in diamond compared to timed implantation. Additionally, through post-implantation analysis, we can further reduce the error resulting in a seven-fold improvement compared to timed implantation, allowing us to better estimate the conversion yield of implanted Si to SiV. We detect SiV emitters by photoluminescence spectroscopy, determine the number of emitters per location and calculate the yield to be 2.98 + 0.21 / - 0.24 %. Candidates for single photon emitters are investigated further by Hanbury-Brown-Twiss interferometry confirming that 82 % of the locations exhibit single photon emission statistics. This counted ion implantation technique paves the way towards deterministic creation of SiV when ion counting is used in combination with methods that improve the activation yield of SiV.
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Submitted 3 December, 2021;
originally announced December 2021.
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Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit using a Quantum Diamond Microscope and Finite Element Analysis
Authors:
P. Kehayias,
E. V. Levine,
L. Basso,
J. Henshaw,
M. Saleh Ziabari,
M. Titze,
R. Haltli,
J. Okoro,
D. R. Tibbetts,
D. M. Udoni,
E. Bielejec,
M. P. Lilly,
T. M. Lu,
P. D. D. Schwindt,
A. M. Mounce
Abstract:
Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system…
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Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system" to optimize QDM measurement implementation, benchmark performance, and assess IC device functionality. To validate the magnetic field images taken with a QDM, we used a SPICE electronic circuit simulator and Finite Element Analysis (FEA) to model the magnetic fields from the 555 die for two functional states. We compare the advantages and the results of three IC-diamond measurement methods, confirm that the measured and simulated magnetic images are consistent, identify the magnetic signatures of current paths within the device, and discuss using this model system to advance QDM magnetic imaging as an IC diagnostic tool.
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Submitted 19 January, 2022; v1 submitted 23 September, 2021;
originally announced September 2021.
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Coherent Interactions Between Silicon-Vacancy Centers in Diamond
Authors:
Matthew W. Day,
Kelsey M. Bates,
Christopher L. Smallwood,
Rachel C. Owen,
Tim Schröder,
Edward Bielejec,
Ronald Ulbricht,
Steven T. Cundiff
Abstract:
We report coherent interactions within an ensemble of silicon-vacancy color centers in diamond. The interactions are ascribed to resonant dipole-dipole coupling. Further, we demonstrate control over resonant center pairs by using a driving optical pulse to induce collective, interaction-enabled Rabi-oscillations in the ensemble. Non-resonant center pairs do not undergo collective oscillations.
We report coherent interactions within an ensemble of silicon-vacancy color centers in diamond. The interactions are ascribed to resonant dipole-dipole coupling. Further, we demonstrate control over resonant center pairs by using a driving optical pulse to induce collective, interaction-enabled Rabi-oscillations in the ensemble. Non-resonant center pairs do not undergo collective oscillations.
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Submitted 3 May, 2021;
originally announced May 2021.
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A fitting algorithm for optimizing ion implantation energies and fluences
Authors:
Pauli Kehayias,
Jacob Henshaw,
Maziar Saleh Ziabari,
Michael Titze,
Edward Bielejec,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we…
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We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we then optimize a set of $N$ energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum $N$ such that the error between the target defect density profile and the defect density profile generated by the $N$ energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 $μ$m surface layers of $^{15}$N or vacancies (using $^4$He).
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Submitted 27 May, 2021; v1 submitted 3 March, 2021;
originally announced March 2021.
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Hidden Silicon-Vacancy Centers in Diamond
Authors:
Christopher L. Smallwood,
Ronald Ulbricht,
Matthew W. Day,
Tim Schröder,
Kelsey M. Bates,
Travis M. Autry,
Geoffrey Diederich,
Edward Bielejec,
Mark E. Siemens,
Steven T. Cundiff
Abstract:
We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of \ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity an…
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We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of \ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity and extended electronic $T_2$ times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.
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Submitted 5 May, 2021; v1 submitted 3 June, 2020;
originally announced June 2020.
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New Technologies for Discovery
Authors:
Z. Ahmed,
A. Apresyan,
M. Artuso,
P. Barry,
E. Bielejec,
F. Blaszczyk,
T. Bose,
D. Braga,
S. A. Charlebois,
A. Chatterjee,
A. Chavarria,
H. -M. Cho,
S. Dalla Torre,
M. Demarteau,
D. Denisov,
M. Diefenthaler,
A. Dragone,
F. Fahim,
C. Gee,
S. Habib,
G. Haller,
J. Hogan,
B. J. P. Jones,
M. Garcia-Sciveres,
G. Giacomini
, et al. (58 additional authors not shown)
Abstract:
For the field of high energy physics to continue to have a bright future, priority within the field must be given to investments in the development of both evolutionary and transformational detector development that is coordinated across the national laboratories and with the university community, international partners and other disciplines. While the fundamental science questions addressed by hi…
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For the field of high energy physics to continue to have a bright future, priority within the field must be given to investments in the development of both evolutionary and transformational detector development that is coordinated across the national laboratories and with the university community, international partners and other disciplines. While the fundamental science questions addressed by high energy physics have never been more compelling, there is acute awareness of the challenging budgetary and technical constraints when scaling current technologies. Furthermore, many technologies are reaching their sensitivity limit and new approaches need to be developed to overcome the currently irreducible technological challenges. This situation is unfolding against a backdrop of declining funding for instrumentation, both at the national laboratories and in particular at the universities. This trend has to be reversed for the country to continue to play a leadership role in particle physics, especially in this most promising era of imminent new discoveries that could finally break the hugely successful, but limited, Standard Model of fundamental particle interactions. In this challenging environment it is essential that the community invest anew in instrumentation and optimize the use of the available resources to develop new innovative, cost-effective instrumentation, as this is our best hope to successfully accomplish the mission of high energy physics. This report summarizes the current status of instrumentation for high energy physics, the challenges and needs of future experiments and indicates high priority research areas.
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Submitted 10 August, 2019; v1 submitted 31 July, 2019;
originally announced August 2019.
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Controlling light emission by engineering atomic geometries in silicon photonics
Authors:
Arindam Nandi,
Xiaodong Jiang,
Dongmin Pak,
Daniel Perry,
Kyunghun Han,
Edward S Bielejec,
Yi Xuan,
Mahdi Hosseini
Abstract:
By engineering atomic geometries composed of nearly 1000 atomic segments embedded in micro-resonators we observe Bragg resonances induced by the atomic lattice at the telecommunication wavelength. The geometrical arrangement of erbium atoms into a lattice inside a silicon nitride microring resonator reduces the scattering loss at a wavelength commensurate with the lattice. We confirm dependency of…
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By engineering atomic geometries composed of nearly 1000 atomic segments embedded in micro-resonators we observe Bragg resonances induced by the atomic lattice at the telecommunication wavelength. The geometrical arrangement of erbium atoms into a lattice inside a silicon nitride microring resonator reduces the scattering loss at a wavelength commensurate with the lattice. We confirm dependency of light emission to the atomic positions and lattice spacing and also observe Fano interference between resonant modes in the system.
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Submitted 12 March, 2020; v1 submitted 24 February, 2019;
originally announced February 2019.
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Photon-mediated interactions between quantum emitters in a diamond nanocavity
Authors:
Ruffin E. Evans,
Mihir K. Bhaskar,
Denis D. Sukachev,
Christian T. Nguyen,
Alp Sipahigil,
Michael J. Burek,
Bartholomeus Machielse,
Grace H. Zhang,
Alexander S. Zibrov,
Edward Bielejec,
Hongkun Park,
Marko Lončar,
Mikhail D. Lukin
Abstract:
Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers strongly coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode r…
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Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers strongly coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally-resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically-mediated interactions. Our experiments pave the way for implementation of cavity-mediated quantum gates between spin qubits and for realization of scalable quantum network nodes.
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Submitted 11 July, 2018;
originally announced July 2018.
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Ion Implantation for Deterministic Single Atom Devices
Authors:
J. L. Pacheco,
M. Singh,
D. L. Perry,
J. R. Wendt,
G. Ten Eyck,
R. P. Manginell,
T. Pluym,
D. R. Luhman,
M. P. Lilly,
M. S. Carroll,
E. Bielejec
Abstract:
We demonstrate a capability of deterministic do** at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom device…
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We demonstrate a capability of deterministic do** at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.
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Submitted 2 November, 2017;
originally announced November 2017.
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Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations
Authors:
J. L. Pacheco,
D. L. Perry,
D. R. Hughart,
M. Marinella,
E. Bielejec
Abstract:
We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a C…
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We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.
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Submitted 25 October, 2017;
originally announced October 2017.
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A bright nanowire single photon source based on SiV centers in diamond
Authors:
L. Marseglia,
K. Saha,
A. Ajoy,
T. Schröder,
D. Englund,
F. Jelezko,
R. Walsworth,
J. L. Pacheco,
D. L. Perry,
E. S. Bielejec,
P. Cappellaro
Abstract:
The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon…
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The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV- centers, targeted to fabricated nanowires. The co-localization of single SiV- centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV- centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV- creation method, enables a new class of devices for integrated photonics and quantum science.
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Submitted 18 August, 2017;
originally announced August 2017.
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A fiber-coupled diamond quantum nanophotonic interface
Authors:
Michael J. Burek,
Charles Meuwly,
Ruffin E. Evans,
Mihir K. Bhaskar,
Alp Sipahigil,
Srujan Meesala,
Denis D. Sukachev,
Christian T. Nguyen,
Jose L. Pacheco,
Edward Bielejec,
Mikhail D. Lukin,
Marko Lončar
Abstract:
Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power…
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Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power coupling at visible wavelengths. We use this approach to demonstrate a bright source of narrowband single photons, based on a silicon-vacancy color center embedded within a waveguide-coupled diamond photonic crystal cavity. Our fiber-coupled diamond quantum nanophotonic interface results in a high flux of coherent single photons into a single mode fiber, enabling new possibilities for realizing quantum networks that interface multiple emitters, both on-chip and separated by long distances.
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Submitted 29 March, 2017; v1 submitted 15 December, 2016;
originally announced December 2016.
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Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures
Authors:
Tim Schröder,
Matthew E. Trusheim,
Michael Walsh,
Luozhou Li,
Jiabao Zheng,
Marco Schukraft,
Jose L. Pacheco,
Ryan M. Camacho,
Edward S. Bielejec,
Alp Sipahigil,
Ruffin E. Evans,
Denis D. Sukachev,
Christian T. Nguyen,
Mikhail D. Lukin,
Dirk Englund
Abstract:
The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm…
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The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices.
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Submitted 29 October, 2016;
originally announced October 2016.
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Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System
Authors:
Alp Sipahigil,
Ruffin E. Evans,
Denis D. Sukachev,
Michael J. Burek,
Johannes Borregaard,
Mihir K. Bhaskar,
Christian T. Nguyen,
Jose L. Pacheco,
Haig A. Atikian,
Charles Meuwly,
Ryan M. Camacho,
Fedor Jelezko,
Edward Bielejec,
Hongkun Park,
Marko Lončar,
Mikhail D. Lukin
Abstract:
Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize…
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Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize a quantum-optical switch controlled by a single color center. We control the switch using SiV metastable orbital states and verify optical switching at the single-photon level by using photon correlation measurements. We use Raman transitions to realize a single-photon source with a tunable frequency and bandwidth in a diamond waveguide. Finally, we create entanglement between two SiV centers by detecting indistinguishable Raman photons emitted into a single waveguide. Entanglement is verified using a novel superradiant feature observed in photon correlation measurements, paving the way for the realization of quantum networks.
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Submitted 17 August, 2016;
originally announced August 2016.
