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Characterisation of Gamma-irradiated MCz-Silicon Detectors with a High-$K$ Negative Oxide as Field Insulator
Authors:
S. Bharthuar,
M. Bezak,
E. Brücken,
A Gädda,
M. Golovleva,
A. Karadzhinova-Ferrer,
A. Karjalainen,
N. Kramarenko,
S. Kirschenmann,
P. Luukka,
J. Ott,
E. Tuominen,
M. Väänänen
Abstract:
The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to micro-scale pixel sensor areas to provide enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of AC-pixel sensors…
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The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to micro-scale pixel sensor areas to provide enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of AC-pixel sensors with negative oxides (such as aluminium oxide - Al$_2$O$_3$ and hafnium oxide - HfO$_2$) as field insulators that possess good dielectric strength and provide radiation hardness. Thin films of Al$_2$O$_3$ and HfO$_2$ grown by atomic layer deposition (ALD) method were used as dielectrics for capacitive coupling. A comparison study based on dielectric material used in MOS capacitors indicate HfO$_2$ as a better candidate since it provides higher sensitivity (where, the term sensitivity is defined as the ratio of the change in flat-band voltage to dose) to negative charge accumulation with gamma irradiation.
Further, space charge sign inversion was observed for sensors processed on high resistivity p-type Magnetic Czochralski silicon (MCz-Si) substrates that were irradiated with gamma rays up to a dose of 1 MGy. The inter-pixel resistance values of heavily gamma irradiated AC-coupled pixel sensors suggest that high-$K$ negative oxides as field insulators provide a good electrical isolation between the pixels.
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Submitted 19 November, 2022; v1 submitted 16 November, 2022;
originally announced November 2022.
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Quality assessment of Cadmium Telluride as a detector material for multispectral medical imaging
Authors:
S. Kirschenmann,
M. Bezak,
S. Bharthuar,
E. Brücken,
M. Golovleva,
A. Gädda,
M. Kalliokoski,
A. Karadzhinova-Ferrer,
P. Koponen,
N. Kramarenko,
P. Luukka,
J. Ott,
J. Tikkanen,
R. Turpeinen,
A. Winkler
Abstract:
Cadmium Telluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their varying concentration of defects necessitate a thorough quality assessment before the complex detector processing procedure. We present our quality assessment of…
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Cadmium Telluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their varying concentration of defects necessitate a thorough quality assessment before the complex detector processing procedure. We present our quality assessment of CdTe as a detector material for multispectral medical imaging, a research which is conducted as part of the Consortium Project Multispectral Photon-counting for Medical Imaging and Beam characterization (MPMIB). The aim of the project is to develop novel CdTe detectors and obtain spectrum-per-pixel information that make the distinction between different radiation types and tissues possible. To evaluate the defect density inside the crystals -- which can deteriorate the detector performance -- we employ infrared microscopy (IRM). Posterior data analysis allows us to visualise the defect distributions as 3D defect maps. Additionally, we investigate front and backside differences of the material with current-voltage (IV) measurements to determine the preferred surface for the pixelisation of the crystal, and perform test measurements with the prototypes to provide feedback for further processing. We present the different parts of our quality assessment chain and will close with first experimental results obtained with one of our prototype PC detectors in a small tomographic setup.
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Submitted 26 January, 2022;
originally announced January 2022.
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Employing infrared microscopy (IRM) in combination with a pre-trained neural network to visualise and analyse the defect distribution in Cadmium Telluride crystals
Authors:
S. Kirschenmann,
S. Bharthuar,
E. Brücken,
M. Golovleva,
A. Gädda,
M. Kalliokoski,
P. Luukka,
J. Ott,
A. Winkler
Abstract:
While Cadmium Telluride (CdTe) excels in terms of photon radiation absorption properties and outperforms silicon (Si) in this respect, the crystal growth, characterization and processing into a radiation detector is much more complicated. Additionally, large concentrations of extended crystallographic defects, such as grain boundaries, twins, and tellurium (Te) inclusions, vary from crystal to cry…
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While Cadmium Telluride (CdTe) excels in terms of photon radiation absorption properties and outperforms silicon (Si) in this respect, the crystal growth, characterization and processing into a radiation detector is much more complicated. Additionally, large concentrations of extended crystallographic defects, such as grain boundaries, twins, and tellurium (Te) inclusions, vary from crystal to crystal and can reduce the spectroscopic performance of the processed detector. A quality assessment of the material prior to the complex fabrication process is therefore crucial. To locate the Te-defects, we scan the crystals with infrared microscopy (IRM) in different layers, obtaining a 3D view of the defect distribution. This provides us with important information on the defect density and locations of Te inclusions, and thus a handle to assess the quality of the material. For the classification of defects in the large amount of IRM image data, a convolutional neural network is employed. From the post-processed and analysed IRM data, 3D defect maps of the CdTe crystals are created, which make different patterns of defect agglomerations inside the crystals visible. In total, more than 100 crystals were scanned with the current IRM setup. In this paper, we compare two crystal batches, each consisting of 12 samples. We find significant differences in the defect distributions of the crystals.
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Submitted 18 August, 2021;
originally announced August 2021.
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Test beam characterization of sensor prototypes for the CMS Barrel MIP Timing Detector
Authors:
R. Abbott,
A. Abreu,
F. Addesa,
M. Alhusseini,
T. Anderson,
Y. Andreev,
A. Apresyan,
R. Arcidiacono,
M. Arenton,
E. Auffray,
D. Bastos,
L. A. T. Bauerdick,
R. Bellan,
M. Bellato,
A. Benaglia,
M. Benettoni,
R. Bertoni,
M. Besancon,
S. Bharthuar,
A. Bornheim,
E. Brücken,
J. N. Butler,
C. Campagnari,
M. Campana,
R. Carlin
, et al. (174 additional authors not shown)
Abstract:
The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event reconstruction and pileup rejection. The central portion of the detector, the Barrel Timing Layer (BTL), will be instrumented with LYSO:Ce crystals and Silicon Photomultipliers (SiPMs) providing a time resolution of about…
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The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event reconstruction and pileup rejection. The central portion of the detector, the Barrel Timing Layer (BTL), will be instrumented with LYSO:Ce crystals and Silicon Photomultipliers (SiPMs) providing a time resolution of about 30 ps at the beginning of operation, and degrading to 50-60 ps at the end of the detector lifetime as a result of radiation damage. In this work, we present the results obtained using a 120 GeV proton beam at the Fermilab Test Beam Facility to measure the time resolution of unirradiated sensors. A proof-of-concept of the sensor layout proposed for the barrel region of the MTD, consisting of elongated crystal bars with dimensions of about 3 x 3 x 57 mm$^3$ and with double-ended SiPM readout, is demonstrated. This design provides a robust time measurement independent of the impact point of the MIP along the crystal bar. We tested LYSO:Ce bars of different thickness (2, 3, 4 mm) with a geometry close to the reference design and coupled to SiPMs manufactured by Hamamatsu and Fondazione Bruno Kessler. The various aspects influencing the timing performance such as the crystal thickness, properties of the SiPMs (e.g. photon detection efficiency), and impact angle of the MIP are studied. A time resolution of about 28 ps is measured for MIPs crossing a 3 mm thick crystal bar, corresponding to an MPV energy deposition of 2.6 MeV, and of 22 ps for the 4.2 MeV MPV energy deposition expected in the BTL, matching the detector performance target for unirradiated devices.
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Submitted 16 July, 2021; v1 submitted 15 April, 2021;
originally announced April 2021.
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Multispectral Photon-Counting for Medical Imaging and Beam Characterization
Authors:
E. Brücken,
S. Bharthuar,
M. Emzir,
M. Golovleva,
A. Gädda,
R. Hostettler,
J. Härkönen,
S. Kirschenmann,
V. Litichevskyi,
P. Luukka,
L. Martikainen,
T. Naaranoja,
I. Nincă,
J. Ott,
H. Petrow,
Z. Purisha,
T. Siiskonen,
S. Särkkä,
J. Tikkanen,
T. Tuuva,
A. Winkler
Abstract:
We present the current status of our project of develo** a photon counting detector for medical imaging. An example motivation lays in producing a monitoring and dosimetry device for boron neutron capture therapy, currently not commercially available. Our approach combines in-house developed detectors based on cadmium telluride or thick silicon with readout chip technology developed for particle…
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We present the current status of our project of develo** a photon counting detector for medical imaging. An example motivation lays in producing a monitoring and dosimetry device for boron neutron capture therapy, currently not commercially available. Our approach combines in-house developed detectors based on cadmium telluride or thick silicon with readout chip technology developed for particle physics experiments at CERN. Here we describe the manufacturing process of our sensors as well as the processing steps for the assembly of first prototypes. The prototypes use currently the PSI46digV2.1-r readout chip. The accompanying readout electronics chain that was used for first measurements will also be discussed. Finally we present an advanced algorithm developed by us for image reconstruction using such photon counting detectors with focus on boron neutron capture therapy. This work is conducted within a consortium of Finnish research groups from Helsinki Institute of Physics, Aalto University, Lappeenranta-Lahti University of Technology LUT and Radiation and Nuclear Safety Authority (STUK) under the RADDESS program of Academy of Finland. Keywords: Solid state detectors, X-ray detectors, Gamma detectors, Neutron detectors, Instrumentation for hadron therapy, Medical-image reconstruction methods and algorithms.
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Submitted 20 February, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
