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10 ps timing with highly irradiated 3D trench silicon pixel sensors
Authors:
A. Lampis,
F. Borgato,
D. Brundu,
A. Cardini,
G. M. Cossu,
G. -F. Dalla Betta,
M. Garau,
L. La Delfa,
A. Lai,
A. Loi,
M. Obertino,
G. Simi,
S. Vecchi
Abstract:
In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of $2.5 \cdot 10^{16}\,1\,MeV\, n_{eq}\,cm^{-2}$. This feature and a detection efficiency close to $99\%$ make this sensors one of the best candidates for 4D tracking…
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In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of $2.5 \cdot 10^{16}\,1\,MeV\, n_{eq}\,cm^{-2}$. This feature and a detection efficiency close to $99\%$ make this sensors one of the best candidates for 4D tracking detectors in High-Energy-Physics experiments.
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Submitted 8 November, 2022; v1 submitted 29 September, 2022;
originally announced September 2022.
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Quality Control (QC) of FBK Preproduction 3D Si Sensors for ATLAS HL-LHC Upgrades
Authors:
D M S Sultan,
Md Arif Abdulla Samy,
J. X. Ye,
M. Boscardin,
F. Ficorella,
S. Ronchin,
G. -F. Dalla Betta
Abstract:
The challenging demands of the ATLAS High Luminosity (HL-LHC) Upgrade aim for a complete swap of new generation sensors that should cope with the ultimate radiation hardness. FBK has been one of the prime foundries to develop and fabricate such radiation-hard 3D silicon (Si) sensors. These sensors are chosen to be deployed into the innermost layer of the ATLAS Inner Tracker (ITk). Recently, a pre-…
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The challenging demands of the ATLAS High Luminosity (HL-LHC) Upgrade aim for a complete swap of new generation sensors that should cope with the ultimate radiation hardness. FBK has been one of the prime foundries to develop and fabricate such radiation-hard 3D silicon (Si) sensors. These sensors are chosen to be deployed into the innermost layer of the ATLAS Inner Tracker (ITk). Recently, a pre-production batch of 3D Si sensors of 50x50 um2 pixel geometry, compatible with the full-size ITKPix (RD53B) readout chip, was fabricated. Two wafers holding temporary metal were diced at IZM, Germany, and a systematic QC test campaign was carried out at the University of Trento electronics laboratory. The paper briefly describes the 3D Si sensor design for ATLAS ITk and the required QC characterization setups. It comprises electrical tests (i.e., I-V, C-V, and I-T) of non-irradiated RD53B sensors. In addition, the study of several parametric analyses, i.e., oxide charge density, oxide thickness, inter-pixel resistance, inter-pixel capacitance, etc., are reported with the aid of Process Control Monitor (PCM) structures.
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Submitted 28 September, 2022; v1 submitted 26 September, 2022;
originally announced September 2022.
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Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors
Authors:
F. Carnesecchi,
S. Strazzi,
A. Alici,
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
D. Cavazza,
G. -F. Dalla Betta,
S. Durando,
M. Ferrero,
F. Ficorella,
O. Hammad Ali,
M. Mandurrino,
A. Margotti,
L. Menzio,
R. Nania,
L. Pancheri,
G. Paternoster,
G. Scioli,
F. Siviero,
V. Sola,
M. Tornago,
G. Vignola
Abstract:
This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick…
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This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $μ$m thick UFSDs, respectively.
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Submitted 11 August, 2022;
originally announced August 2022.
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Novel Sensors for Particle Tracking: a Contribution to the Snowmass Community Planning Exercise of 2021
Authors:
M. R. Hoeferkamp,
S. Seidel,
S. Kim,
J. Metcalfe,
A. Sumant,
H. Kagan,
W. Trischuk,
M. Boscardin,
G. -F. Dalla Betta,
D. M. S. Sultan,
N. T. Fourches,
C. Renard,
A. Barbier,
T. Mahajan,
A. Minns,
V. Tokranov,
M. Yakimov,
S. Oktyabrsky,
C. Gingu,
P. Murat,
M. T. Hedges
Abstract:
Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent positi…
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Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent position, vertex, and timing resolution, simplified integration, and optimized power, cost, and material.
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Submitted 23 February, 2022;
originally announced February 2022.
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The second production of RSD (AC-LGAD) at FBK
Authors:
M. Mandurrino,
R. Arcidiacono,
A. Bisht,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
G. -F. Dalla Betta,
M. Ferrero,
F. Ficorella,
O. Hammad Ali,
A. D. Martinez Rojas,
L. Menzio,
L. Pancheri,
G. Paternoster,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a c…
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In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed.
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Submitted 8 June, 2022; v1 submitted 28 November, 2021;
originally announced November 2021.
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Performance of Thin Planar \textit{n-on-p} silicon pixels after HL-LHC radiation fluences
Authors:
A. Ducourthial,
M. Bomben,
G. Calderini,
R. Camacho,
L. D'Eramo,
I. Luise,
G. Marchiori,
M. Boscardin,
L. Bosisio,
G. Darbo,
G. -F. Dalla Betta,
G. Giacomini,
M. Meschini,
A. Messineo,
S. Ronchin,
N. Zorzi
Abstract:
The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130~$μ$m thick $n-on-p$ silicon pixel sensors which can withstand the expected large particle fluences at HL- LHC, while deliverin…
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The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130~$μ$m thick $n-on-p$ silicon pixel sensors which can withstand the expected large particle fluences at HL- LHC, while delivering data at high rate with excellent hit efficiency. Such sensors were tested on beam before and after irradiation both at CERN-SPS and at DESY, and their performances are presented in this paper. Beam test data indicate that these detectors are suited for all the layers where planar sensors are foreseen in the future ATLAS tracker: hit-efficiency is greater than 97\% for fluences $Φ\lesssim 7\times10^{15}\rm{n_{eq}/cm^2}$ and module power consumption is within the specified limits. Moreover, at a fluence $Φ= 1.3\times10^{16}\rm{n_{eq}/cm^2}$, hit-efficiency is still as high as 88\% and charge collection efficiency is about 30\%.
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Submitted 5 September, 2019; v1 submitted 16 October, 2018;
originally announced October 2018.
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First FBK Production of 50$μ$m Ultra-Fast Silicon Detectors
Authors:
V. Sola,
R. Arcidiacono,
M. Boscardin,
N. Cartiglia,
G. -F. Dalla Betta,
F. Ficorella,
M. Ferrero,
M. Mandurrino,
L. Pancheri,
G. Paternoster,
A. Staiano
Abstract:
Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $μ$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer do** profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multi…
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Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $μ$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer do** profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $φ\sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production.
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Submitted 6 October, 2018; v1 submitted 12 February, 2018;
originally announced February 2018.
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Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations
Authors:
F. Moscatelli,
D. Passeri,
A. Morozzi,
Roberto Mendicino,
G. -F. Dalla Betta,
G. M. Bilei
Abstract:
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test struct…
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In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2 10^16 1 MeV equivalent n/cm^2) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.
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Submitted 30 November, 2016;
originally announced November 2016.
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Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors
Authors:
F. Moscatelli,
P. Maccagnani,
D. Passeri,
G. M. Bilei,
L. Servoli,
A. Morozzi,
G. -F. Dalla Betta,
R. Mendicino,
M. Boscardin,
N. Zorzi
Abstract:
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements…
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In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.
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Submitted 30 November, 2016;
originally announced November 2016.
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Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector
Authors:
S. Grinstein,
M. Baselga,
M. Boscardin,
M. Christophersen,
C. Da Via,
G. -F. Dalla Betta,
G. Darbo,
V. Fadeyev,
C. Fleta,
C. Gemme,
P. Grenier,
A. Jimenez,
I. Lopez,
A. Micelli,
C. Nellist,
S. Parker,
G. Pellegrini,
B. Phlips,
D. -L. Pohl,
H. F. -W. Sadrozinski,
P. Sicho,
S. Tsiskaridze
Abstract:
Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertab…
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Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.
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Submitted 21 April, 2015; v1 submitted 21 February, 2013;
originally announced February 2013.
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Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
Authors:
A. La Rosa,
M. Boscardin,
M. Cobal,
G. -F. Dalla Betta,
C. Da Via,
G. Darbo,
C. Gallrapp,
C. Gemme,
F. Huegging,
J. Janssen,
A. Micelli,
H. Pernegger,
M. Povoli,
N. Wermes,
N. Zorzi
Abstract:
In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laborato…
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In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.
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Submitted 19 March, 2012; v1 submitted 13 December, 2011;
originally announced December 2011.
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Characterization of 3D-DDTC detectors on p-type substrates
Authors:
G. -F. Dalla Betta,
M. Boscardin,
L. Bosisio,
G. Darbo,
P. Gabos,
C. Gemme,
M. Koehler,
A. La Rosa,
U. Parzefall,
H. Pernegger,
C. Piemonte,
M. Povoli,
I. Rachevskaia,
S. Ronchin,
L. Wiik,
A. Zoboli,
N. Zorzi
Abstract:
We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.
We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.
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Submitted 25 November, 2009;
originally announced November 2009.
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Preliminary results of 3D-DDTC pixel detectors for the ATLAS upgrade
Authors:
A. La Rosa,
M. Boscardin,
G. -F. Dalla Betta,
G. Darbo,
C. Gemme,
H. Pernegger,
C. Piemonte,
M. Povoli,
S. Ronchin,
A. Zoboli,
N. Zorzi,
E. Bolle,
M. Borri,
C. Da Via,
S. Dong,
S. Fazio,
P. Grenier,
S. Grinstein,
H. Gjersdal,
P. Hansson,
F. Huegging,
P. Jackson,
M. Kocian,
F. Rivero,
O. Rohne
, et al. (7 additional authors not shown)
Abstract:
3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200um, and different column depths are available, with overlaps between junction c…
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3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200um, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110um to 150um. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3) at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am241 gamma-ray sources, charge collection tests with Sr90 beta-source and an overview of preliminary results from the CERN beam test.
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Submitted 20 October, 2009;
originally announced October 2009.
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Development of 3D-DDTC pixel detectors for the ATLAS upgrade
Authors:
G. -F. Dalla Betta,
M. Boscardin,
G. Darbo,
C. Gemme,
A. La Rosa,
H. Pernegger,
C. Piemonte,
M. Povoli,
S. Ronchin,
A. Zoboli,
N. Zorzi
Abstract:
We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be…
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We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. The first assemblies of these sensors (featuring 2, 3, or 4 columns per pixel) with the ATLAS FEI3 read-out chip have been tested in laboratory. Selected results from the electrical and functional characterization with radioactive sources are here discussed.
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Submitted 19 October, 2009;
originally announced October 2009.
