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Narrow Linewidth near-UV InGaN Laser Diode based on External Cavity Fiber Bragg Grating
Authors:
Antoine Congar,
Mathilde Gay,
Georges Perin,
Dominique Mammez,
Jean-Claude Simon,
Pascal Besnard,
Julien Rouvillain,
Thierry Georges,
Laurent Lablonde,
Thierry Robin,
Stéphane Trebaol
Abstract:
We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode-suppression-ratio and mW output power. Detailed frequency noise analysis reveals s…
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We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode-suppression-ratio and mW output power. Detailed frequency noise analysis reveals sub-MHz integrated linewidth and 16 kHz intrinsic linewidth. Such a narrow linewidth laser diode in the near-UV domain with a compact and low-cost design could find applications whenever coherency and interferometric resolutions are needed.
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Submitted 8 February, 2021;
originally announced February 2021.
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Intracavity Brillouin gain characterization based on cavity ringdown spectroscopy
Authors:
Ananthu Sebastian,
Stéphane Trebaol,
Pascal Besnard
Abstract:
We report a technique based upon the cavity ringdown method that enables to characterize the Brillouin gain coefficient directly in a laser cavity. Material gain, optical cavity parameters and lasing properties can be extracted from measurements whithin a single experiment.
We report a technique based upon the cavity ringdown method that enables to characterize the Brillouin gain coefficient directly in a laser cavity. Material gain, optical cavity parameters and lasing properties can be extracted from measurements whithin a single experiment.
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Submitted 21 June, 2019;
originally announced June 2019.
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Relative Intensity Noise in a Multi-Stokes Brillouin Laser
Authors:
Ananthu Sebastian,
Irina V. Balikereva,
Schadrac Fresnel,
Stéphane Trebaol,
Pascal Besnard
Abstract:
We investigate the Relative Intensity Noise (RIN) properties of a multi-Stokes Brillouin fiber ring laser. We experimentally analyse intensity noise of each Stokes waves and study the noise dynamics of the cascaded Brillouin scattering process. We observe up to 20 dB/Hz intensity noise reduction compared to that of the RIN input pump laser. We examine the impact of the fiber ring quality factor on…
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We investigate the Relative Intensity Noise (RIN) properties of a multi-Stokes Brillouin fiber ring laser. We experimentally analyse intensity noise of each Stokes waves and study the noise dynamics of the cascaded Brillouin scattering process. We observe up to 20 dB/Hz intensity noise reduction compared to that of the RIN input pump laser. We examine the impact of the fiber ring quality factor on the laser RIN features such as amplitude reduction and relaxation frequency. A numerical model based on a set of coupled-mode equations replicate the experimental observations; confirming the class B like behavior of a multi-Stokes Brillouin laser. Our study enables to determine the optimal parameter values to operate the multi-Stokes laser in the low noise regime.
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Submitted 26 October, 2018;
originally announced November 2018.
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Experimental investigation of relaxation oscillations resonance in mode-locked Fabry-Perot semiconductor lasers
Authors:
Vincent Roncin,
Julien Poëtte,
Jean-François Hayau,
Pascal Besnard,
Jean-Claude Simon,
F. Van Dijk,
Alexandre Shen,
Guang-Hua Duan
Abstract:
We propose in this communication an experimental study of the relaxation oscillations behavior in mode-locked lasers. The semiconductor self-pulsating laser diode is composed by two gain sections, without saturable absorber. It is made of bulk structure and designed for optical telecommunication applications. This specific device allows two different regimes of optical modulation: the first one co…
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We propose in this communication an experimental study of the relaxation oscillations behavior in mode-locked lasers. The semiconductor self-pulsating laser diode is composed by two gain sections, without saturable absorber. It is made of bulk structure and designed for optical telecommunication applications. This specific device allows two different regimes of optical modulation: the first one corresponds to the resonance of the relaxation oscillations and the second one, to the mode-locking regime at FSR value. This singular behavior leads us to characterize the self-pulsations which are coexisting in the laser and to describe two regimes of output modulation: the first one appears thanks to the resonance of the oscillation relaxation and the other one corresponds to the FSR of the Fabry-Perot laser at 40 GHz.
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Submitted 19 May, 2014;
originally announced May 2014.
