Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions
Authors:
Wenkai Zhu,
Yingmei Zhu,
Tong Zhou,
Xianpeng Zhang,
Hailong Lin,
Qirui Cui,
Faguang Yan,
Ziao Wang,
Yongcheng Deng,
Hongxin Yang,
Lixia Zhao,
Igor Žutić,
Kirill D. Belashchenko,
Kaiyou Wang
Abstract:
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching re…
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Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe3GeTe2/GaSe/Fe3GeTe2 MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of two-dimensional ferromagnets in semiconductor-based vdW junctions offers gate-tunability, bias dependence, magnetic proximity effects, and spin-dependent optical-selection rules. We demonstrate that not just the magnitude, but also the TMR sign is tuned by the applied bias or the semiconductor thickness, enabling modulation of highly spin-polarized carriers in vdW semiconductors.
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Submitted 21 March, 2023;
originally announced March 2023.
Microscopic origin of the structural phase transitions at the Cr2O3 (0001) surface
Authors:
A. L. Wysocki,
Siqi Shi,
K. D. Belashchenko
Abstract:
The surface of a Cr2O3 (0001) film epitaxially grown on Cr undergoes an unusual reentrant sequence of structural phase transitions. In order to understand the underlying microscopic mechanisms, the structural and magnetic properties of the Cr2O3 (0001) surface are here studied using first-principles electronic structure calculations. Two competing surface Cr sites are identified. The energetics of…
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The surface of a Cr2O3 (0001) film epitaxially grown on Cr undergoes an unusual reentrant sequence of structural phase transitions. In order to understand the underlying microscopic mechanisms, the structural and magnetic properties of the Cr2O3 (0001) surface are here studied using first-principles electronic structure calculations. Two competing surface Cr sites are identified. The energetics of the surface is described by a configurational Hamiltonian with parameters determined using total energy calculations for several surface supercells. Effects of epitaxial strain and magnetic ordering on configurational interaction are also included. The thermodynamics of the system is studied using Monte Carlo simulations. At zero strain the surface undergoes an ordering phase transition at 165 K. Tensile epitaxial strain together with antiferromagnetic ordering drive the system toward strong configurational frustration, suggesting the mechanism for the disordering phase transition at lower temperatures.
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Submitted 19 October, 2012;
originally announced October 2012.
