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Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
Authors:
Di Wu,
Wei Li,
Amritesh Rai,
Xiaoyu Wu,
Hema C. P. Movva,
Maruthi N. Yogeesh,
Zhaodong Chu,
Sanjay K. Banerjee,
Deji Akinwande,
Keji Lai
Abstract:
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical i…
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The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The configuration is analogous to the p-i-n diode, where the injected carriers dominate in the recombination current. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.
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Submitted 21 February, 2019;
originally announced February 2019.
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Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators
Authors:
Tanuj Trivedi,
Anupam Roy,
Hema C. P. Movva,
Emily S. Walker,
Seth R. Bank,
Dean P. Neikirk,
Sanjay K. Banerjee
Abstract:
As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable processes for high-quality TI compounds remains a challenge. To this end, a versatile van der Waals epitaxy (vdWE) process for custom-feature Bismuth Telluro-Sulfide TI growth and fabri…
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As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable processes for high-quality TI compounds remains a challenge. To this end, a versatile van der Waals epitaxy (vdWE) process for custom-feature Bismuth Telluro-Sulfide TI growth and fabrication is presented, achieved through selective-area fluorination and modification of surface free-energy on mica. The TI features grow epitaxially in large single-crystal trigonal domains, exhibiting armchair or zigzag crystalline edges highly oriented with the underlying mica lattice and only two preferred domain orientations mirrored at $180^\circ$. As-grown feature thickness dependence on lateral dimensions and denuded zones at boundaries are observed, as explained by a semi-empirical two-species surface migration model with robust estimates of growth parameters and elucidating the role of selective-area surface modification. Topological surface states contribute up to 60% of device conductance at room-temperature, indicating excellent electronic quality. High-yield microfabrication and the adaptable vdWE growth mechanism with readily alterable precursor and substrate combinations, lend the process versatility to realize crystalline TI synthesis in arbitrary shapes and arrays suitable for facile integration with processes ranging from rapid prototy** to scalable manufacturing.
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Submitted 16 July, 2017;
originally announced July 2017.
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Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n$^{+}$/p Junctions
Authors:
William Hsu,
Amritesh Rai,
Xiaoru Wang,
Yun Wang,
Taegon Kim,
Sanjay K. Banerjee
Abstract:
The phosphorous activation in Ge n$^{+}$/p junctions is compared in terms of junction depth, by using laser spike annealing at 860°C for 400$μ$s. The reverse junction leakage is found to strongly depend on the abruptness of dopant profiles. A shallow and abrupt junction is shown to have lower phosphorous activation level, due to surface dose loss, and higher band-to-band tunneling (BTBT) leakage,…
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The phosphorous activation in Ge n$^{+}$/p junctions is compared in terms of junction depth, by using laser spike annealing at 860°C for 400$μ$s. The reverse junction leakage is found to strongly depend on the abruptness of dopant profiles. A shallow and abrupt junction is shown to have lower phosphorous activation level, due to surface dose loss, and higher band-to-band tunneling (BTBT) leakage, when compared to the deep junction. Simulations were carried out to evaluate the lowest achievable OFF-state currents (I$_{OFF}$) for Ge double-gate FETs when using such an abrupt junction. Our results indicate that a Ge body thickness smaller than 5 nm is required to suppress the BTBT leakage and meet the requirement for the high performance devices defined by the International Technology Roadmap for Semiconductors (I$_{OFF}$ = 10$^{-7}$ A/$μ$m).
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Submitted 18 May, 2017;
originally announced May 2017.
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Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy
Authors:
Tanmoy Pramanik,
Anupam Roy,
Rik Dey,
Amritesh Rai,
Samaresh Guchhait,
Hema CP Movva,
Cheng-Chih Hsieh,
Sanjay K Banerjee
Abstract:
We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitativ…
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We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.
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Submitted 8 May, 2017;
originally announced May 2017.
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Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement
Authors:
Urmimala Roy,
Tanmoy Pramanik,
Leonard F. Register,
Sanjay K. Banerjee
Abstract:
Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endurance. However, the write pulse duration must be long enough to ensure a low write error rate (WER), the probability that a bit will remain unswitched after the write pulse is turned off, in the presence of stochastic th…
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Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endurance. However, the write pulse duration must be long enough to ensure a low write error rate (WER), the probability that a bit will remain unswitched after the write pulse is turned off, in the presence of stochastic thermal effects. WERs on the scale of 10$^{-9}$ or lower are desired. Within a macrospin approximation, WERs can be calculated analytically using the Fokker-Planck method to this point and beyond. However, dynamic micromagnetic effects within the bit can affect and lead to faster switching. Such micromagnetic effects can be addressed via numerical solution of the stochastic Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. However, determining WERs approaching 10$^{-9}$ would require well over 10$^{9}$ such independent simulations, which is infeasible. In this work, we explore calculation of WER using "rare event enhancement" (REE), an approach that has been used for Monte Carlo simulation of other systems where rare events nevertheless remain important. Using a prototype REE approach tailored to the STT-RAM switching physics, we demonstrate reliable calculation of a WER to 10$^{-9}$ with sets of only approximately 10$^{3}$ ongoing stochastic LLGS simulations, and the apparent ability to go further.
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Submitted 28 March, 2016; v1 submitted 28 March, 2016;
originally announced March 2016.
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Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer
Authors:
Li Tao,
Milo Holt,
Jongho Lee,
Harry Chou,
Stephen J. McDonnell,
Domingo A. Ferrer,
Matias Babenco,
Robert M. Wallace,
Sanjay K. Banerjee,
Rodney S. Ruoff,
Deji Akinwande
Abstract:
Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ra…
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Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, phase transition of copper film is observed on technologically ubiquitous oxidized Si wafer where the oxide is a standard amorphous thermal oxide. Ion mass spectroscopy indicates that the copper films can be purposely hydrogen-enriched during a hydrogen anneal which subsequently affords graphene growth with a sole carbonaceous precursor for low defect densities. Owing to the strong hexagonal lattice match, the graphene domains align to the Cu (111) domains, suggesting a pathway for increasing the graphene grains by maximizing the copper grain sizes. Fabricated graphene transistors on a flexible polyimide film yield a peak carrier mobility ~4,930 cm2/Vs.
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Submitted 7 May, 2012;
originally announced May 2012.
