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Temperature Dependent Low-Frequency Noise Characteristics of NiO$_x$/Ga$_2$O$_3$ p-n Heterojunction Diodes
Authors:
Subhajit Ghosh,
Dinusha Herath Mudiyanselage,
Fariborz Kargar,
Yuji Zhao,
Houqiang Fu,
Alexander A. Balandin
Abstract:
We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). We observed an intriguing non-monotonic dependence of the noise on temperature nea…
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We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). We observed an intriguing non-monotonic dependence of the noise on temperature near T = 380$^\circ$ K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes was determined to be on the order of 10$^{-14}$ cm$^2$/Hz (f = 10 Hz) at 0.1 A/cm$^2$ current density. In terms of the noise level, NiO$_x$/Ga$_2$O$_3$ p-n diodes occupy an intermediate position among devices of various designs implemented with different ultra-wide-band-gap (UWBG) semiconductors. The obtained results are important for understanding the electronic properties of the UWBG heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies.
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Submitted 28 July, 2023;
originally announced July 2023.
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Electrical Gating of the Charge-Density-Wave Phases in Quasi-2D h-BN/1T-TaS$_2$ Devices
Authors:
Maedeh Taheri,
Jonas Brown,
Adil Rehman,
Nicholas R. Sesing,
Fariborz Kargar,
Tina T. Salguero,
Sergey Rumyantsev,
Alexander A. Balandin
Abstract:
We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and th…
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We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while swee** the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source-drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.
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Submitted 10 August, 2022;
originally announced August 2022.
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Excess Noise in High-Current Diamond Diodes -- Physical Mechanisms and Implications for Reliability Assessment
Authors:
Subhajit Ghosh,
Harshad Surdi,
Fariborz Kargar,
Franz A. Koeck,
Sergey Rumyantsev,
Stephen Goodnick,
Robert Nemanich,
Alexander A. Balandin
Abstract:
We report results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by generation - recombination noise, which reveals itself either as Lorentzian spectral features or as a 1/f noise spectrum (f is the frequency). The generation - recombination bulges are characteristic for diamond diod…
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We report results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by generation - recombination noise, which reveals itself either as Lorentzian spectral features or as a 1/f noise spectrum (f is the frequency). The generation - recombination bulges are characteristic for diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices - it scales as I^2 at the low (I<10 uA) and high (I>10 mA) currents, and, rather unusually, remain nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, reveal a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with increasing temperature. The obtained results are important for development of noise spectroscopy-based approaches for device reliability assessment for the high-power diamond electronics.
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Submitted 26 December, 2021;
originally announced December 2021.
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Efficient Absorption of Terahertz Radiation in Graphene Polymer Composites
Authors:
Zahra Barani,
Kamil Stelmaszczyk,
Fariborz Kargar,
Yevhen Yashchyshyn,
Grzegorz Cywiński,
Sergey Rumyantsev,
Alexander A. Balandin
Abstract:
We demonstrate that polymer composites with a low loading of graphene, below 1.2 wt. %, are efficient as electromagnetic absorbers in the THz frequency range. The epoxy-based graphene composites were tested at frequencies from 0.25 THz to 4 THz, revealing total shielding effectiveness of 85 dB (1 mm thickness) with graphene loading of 1.2 wt. % at the frequency f=1.6 THz. The THz radiation is most…
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We demonstrate that polymer composites with a low loading of graphene, below 1.2 wt. %, are efficient as electromagnetic absorbers in the THz frequency range. The epoxy-based graphene composites were tested at frequencies from 0.25 THz to 4 THz, revealing total shielding effectiveness of 85 dB (1 mm thickness) with graphene loading of 1.2 wt. % at the frequency f=1.6 THz. The THz radiation is mostly blocked by absorption rather than reflection. The efficiency of the THz radiation shielding by the lightweight, electrically insulating composites, increases with increasing frequency. Our results suggest that even the thin-film or spray coatings of graphene composites with thickness in the few-hundred-micrometer range can be sufficient for blocking THz radiation in many practical applications.
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Submitted 2 September, 2021;
originally announced September 2021.
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Thermal Transport in Graphene Composites: The Effect of Lateral Dimensions of Graphene Fillers
Authors:
Sriharsha Sudhindra,
Farnia Rashvand,
Dylan Wright,
Zahra Barani,
Aleksey D. Drozdov,
Saba Baraghani,
Claudia Backes,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
We report on the investigation of thermal transport in non-cured silicone composites with graphene fillers of different lateral dimensions. Graphene fillers are comprised of few-layer graphene flakes with lateral sizes in the range from 400 nm to 1200 nm and number of atomic planes from one to ~100. The distribution of the lateral dimensions and thicknesses of graphene fillers has been determined…
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We report on the investigation of thermal transport in non-cured silicone composites with graphene fillers of different lateral dimensions. Graphene fillers are comprised of few-layer graphene flakes with lateral sizes in the range from 400 nm to 1200 nm and number of atomic planes from one to ~100. The distribution of the lateral dimensions and thicknesses of graphene fillers has been determined via atomic force microscopy statistics. It was found that in the examined range of the lateral dimensions the thermal conductivity of the composites increases with the increasing size of the graphene fillers. The observed difference in thermal properties can be related to the average gray phonon mean free path in graphene, which has been estimated to be around ~800 nm at room temperature. The thermal contact resistance of composites with graphene fillers of 1200-nm lateral dimensions was also smaller than that of composites with graphene fillers of 400-nm lateral dimensions. The effects of the filler loading fraction and the filler size on the thermal conductivity of the composites were rationalized within the Kanari model. The obtained results are important for optimization of graphene fillers for applications in thermal interface materials for heat removal from high-power-density electronics.
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Submitted 18 August, 2021;
originally announced August 2021.
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Charge Transport in Electronic Devices Printed with Inks of Quasi-1D van der Waals Materials
Authors:
Saba Baraghani,
Jehad Abourahma,
Zahra Barani,
Amirmahdi Mohammadzadeh,
Sriharsha Sudhindra,
Alexey Lipatov,
Alexander Sinitskii,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
We report on fabrication and characterization of electronic devices printed with inks of quasi-1D van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allows for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS3 semiconductor into quasi-1D nanoribbons di…
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We report on fabrication and characterization of electronic devices printed with inks of quasi-1D van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allows for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS3 semiconductor into quasi-1D nanoribbons dispersed in a mixture of ethanol and ethylene glycol. The temperature dependent electrical measurements indicate that electron transport in the printed devices is dominated by the electron hop** mechanisms. The low-frequency electronic noise in the printed devices is of 1/f type near room temperature (f is the frequency). The abrupt changes in the temperature dependence of the noise spectral density and the spectrum itself can be indicative of the phase transition in individual TiS3 nanoribbons as well as modifications in the hop** transport regime. The obtained results attest to the potential of quasi-1D van der Waals materials for applications in printed electronics.
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Submitted 8 July, 2021;
originally announced July 2021.
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Phonon modes and Raman signatures of MnBi2nTe3n+1 (n=1,2,3,4) magnetic topological heterostructures
Authors:
Yu** Cho,
** Ho Kang,
Liangbo Liang,
Xiangru Kong,
Subhajit Ghosh,
Fariborz Kargar,
Chaowei Hu,
Alexander A. Balandin,
Alexander A. Puretzky,
Ni Ni,
Chee Wei Wong
Abstract:
An intrinsic antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$ can be realized by intercalating Mn-Te bilayer chain in a topological insulator, $\mathrm{Bi_2Te_3}$. $\mathrm{MnBi_2Te_4}$ provides not only a stable platform to demonstrate exotic physical phenomena, but also easy tunability of the physical properties. For example, inserting more $\mathrm{Bi_2Te_3}$ layers in between two…
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An intrinsic antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$ can be realized by intercalating Mn-Te bilayer chain in a topological insulator, $\mathrm{Bi_2Te_3}$. $\mathrm{MnBi_2Te_4}$ provides not only a stable platform to demonstrate exotic physical phenomena, but also easy tunability of the physical properties. For example, inserting more $\mathrm{Bi_2Te_3}$ layers in between two adjacent $\mathrm{MnBi_2Te_4}$ weakens the interlayer magnetic interactions between the $\mathrm{MnBi_2Te_4}$ layers. Here we present the first observations on the inter- and intra-layer phonon modes of $\mathrm{MnBi_{2n}Te_{3n+1}}$ (n=1,2,3,4) using cryogenic low-frequency Raman spectroscopy. We experimentally and theoretically distinguish the Raman vibrational modes using various polarization configurations. The two peaks at 66 cm$^{-1}$ and 112 cm$^{-1}$ show an abnormal perturbation in the Raman linewidths below the magnetic transition temperature due to spin-phonon coupling. In $\mathrm{MnBi_4Te_7}$, the $\mathrm{Bi_2Te_3}$ layers induce Davydov splitting of the A$_{1g}$ mode around 137 cm$^{-1}$ at 5 K. Using the linear chain model, we estimate the out-of-plane interlayer force constant to be $(3.98 \pm 0.14) \times 10^{19}$ N/m$^3$ at 5 K, three times weaker than that of $\mathrm{Bi_2Te_3}$. Our work discovers the dynamics of phonon modes of the $\mathrm{MnBi_2Te_4}$ and the effect of the additional $\mathrm{Bi_2Te_3}$ layers, providing the first-principles guidance to tailor the physical properties of layered heterostructures.
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Submitted 26 July, 2021; v1 submitted 7 July, 2021;
originally announced July 2021.
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Noncured Graphene Thermal Interface Materials: Minimizing the Thermal Contact Resistance
Authors:
Sriharsha Sudhindra,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
We report on experimental investigation of thermal contact resistance of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness. It is found that the thermal contact resistance depends on the graphene loading non-monotonically, achieving its minimum at the loading fraction of ~15 wt.%. Increasing the surface roughness by ~1 micrometer re…
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We report on experimental investigation of thermal contact resistance of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness. It is found that the thermal contact resistance depends on the graphene loading non-monotonically, achieving its minimum at the loading fraction of ~15 wt.%. Increasing the surface roughness by ~1 micrometer results in approximately the factor of x2 increase in the thermal contact resistance for this graphene loading. The obtained dependences of the thermal conductivity, thermal contact resistance, and the total thermal resistance of the thermal interface material layer on the graphene loading and surface roughness indicate the need for optimization of the loading fraction for specific materials and roughness of the connecting surfaces. Our results are important for develo** graphene technologies for thermal management of high-power-density electronics.
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Submitted 3 June, 2021;
originally announced June 2021.
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Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed
Authors:
Amirmahdi Mohammadzadeh,
Saba Baraghani,
Shenchu Yin,
Fariborz Kargar,
Jonathan P. Bird,
Alexander A. Balandin
Abstract:
We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current-voltage characteristics. The switching action is based upon the nearly-commensurate to incommensurate charge-density-wave phase transition in this material, which has a characteristic temperature of 350 K at thermal equi…
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We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current-voltage characteristics. The switching action is based upon the nearly-commensurate to incommensurate charge-density-wave phase transition in this material, which has a characteristic temperature of 350 K at thermal equilibrium. For sufficiently short pulses, with rise times in the nanosecond range, self-heating of the devices is suppressed, and their current-voltage characteristics are weakly non-linear and free of hysteresis. This changes as the pulse duration is increased to 200 ns, where the current develops pronounced hysteresis that evolves non-monotonically with the pulse duration. By combining the results of our experiments with a numerical analysis of transient heat diffusion in these devices, we clearly reveal the thermal origins of their switching. In spite of this thermal character, our modeling suggests that suitable reduction of the size of these devices should allow their operation at GHz frequencies.
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Submitted 17 January, 2021;
originally announced January 2021.
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Brillouin-Mandelstam Light Scattering Spectroscopy: Applications in Phononics and Spintronics
Authors:
Fariborz Kargar,
Alexander A. Balandin
Abstract:
Recent years witnessed much broader use of Brillouin inelastic light scattering spectroscopy for the investigation of phonons and magnons in novel materials, nanostructures, and devices. Driven by developments in instrumentation and the strong need for accurate knowledge of energies of elemental excitations, the Brillouin - Mandelstam spectroscopy is rapidly becoming an essential technique, comple…
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Recent years witnessed much broader use of Brillouin inelastic light scattering spectroscopy for the investigation of phonons and magnons in novel materials, nanostructures, and devices. Driven by developments in instrumentation and the strong need for accurate knowledge of energies of elemental excitations, the Brillouin - Mandelstam spectroscopy is rapidly becoming an essential technique, complementary to the Raman inelastic light scattering spectroscopy. We provide an overview of recent progress in the Brillouin light scattering technique, focusing on the use of this photonic method for the investigation of confined acoustic phonons, phononic metamaterials, magnon propagation and scattering. The Review emphasizes emerging applications of the Brillouin - Mandelstam spectroscopy for phonon engineered structures and spintronic devices and concludes with a perspective for future directions.
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Submitted 16 November, 2020;
originally announced November 2020.
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Review of Graphene-based Thermal Polymer Nanocomposites: Current State of the Art and Future Prospects
Authors:
Jacob S. Lewis,
Timothy Perrier,
Zahra Barani,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
We review the current state of the art of graphene-enhanced thermal interface materials for the management of heat the next generation of electronics. Increased integration densities, speed, and power of electronic and optoelectronic devices require thermal interface materials with substantially higher thermal conductivity, improved reliability, and lower cost. Graphene has emerged as a promising…
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We review the current state of the art of graphene-enhanced thermal interface materials for the management of heat the next generation of electronics. Increased integration densities, speed, and power of electronic and optoelectronic devices require thermal interface materials with substantially higher thermal conductivity, improved reliability, and lower cost. Graphene has emerged as a promising filler material that can meet the demands of future high-speed and high-powered electronics. This review describes the use of graphene as a filler in curing and non-curing polymer matrices. Special attention is given to strategies for achieving the thermal percolation threshold with its corresponding characteristic increase in the overall thermal conductivity. Many applications require high thermal conductivity of the composites while simultaneously preserving electrical insulation. A hybrid filler -- graphene and boron nitride -- approach is presented as possible technology for independent control of electrical and thermal conduction. Reliability and lifespan performance of thermal interface materials is an important consideration towards the determination of appropriate practical applications. The present review addresses these issues in detail, demonstrating the promise of the graphene-enhanced thermal interface materials as compared to alternative technologies.
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Submitted 24 August, 2020;
originally announced August 2020.
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High-Temperature Electromagnetic and Thermal Characteristics of Graphene Composites
Authors:
Zahra Barani,
Fariborz Kargar,
Amirmahdi Mohammadzadeh,
Sahar Naghibi,
Carissa Lo,
Brandon Rivera,
Alexander A. Balandin
Abstract:
We describe a method for scalable synthesis of epoxy composites with graphene and few-layer graphene fillers, and report on the electromagnetic interference (EMI) shielding and thermal properties of such composites at elevated temperatures. The tested materials reveal excellent total EMI shielding of ~65 dB (~105 dB) at a thickness of 1 mm(~2 mm) in the X-band frequency range of f=8.2 GHz - 12.4 G…
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We describe a method for scalable synthesis of epoxy composites with graphene and few-layer graphene fillers, and report on the electromagnetic interference (EMI) shielding and thermal properties of such composites at elevated temperatures. The tested materials reveal excellent total EMI shielding of ~65 dB (~105 dB) at a thickness of 1 mm(~2 mm) in the X-band frequency range of f=8.2 GHz - 12.4 GHz. The room-temperature cross-plane thermal conductivity of the composite with ~19.5 vol.% of fillers was determined to be ~11.2 W/mK, which is a factor of x41 larger than that of the pristine epoxy. Interestingly, the EMI shielding efficiency improves further as the temperature increases to 520 K while the thermal conductivity remains approximately constant. The excellent EMI shielding and heat conduction characteristics of such multifunctional graphene composites at elevated temperatures are promising for packaging applications of microwave components where EMI shielding and thermal management are important design considerations.
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Submitted 25 April, 2020;
originally announced April 2020.
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Graphene Composites as Efficient Electromagnetic Absorbers in the Extremely High Frequency Band
Authors:
Zahra Barani,
Fariborz Kargar,
Konrad Godziszewski,
Adil Rehman,
Yevhen Yashchyshyn,
Sergey Rumyantsev,
Grzegorz Cywiński,
Wojciech Knap,
Alexander A. Balandin
Abstract:
We report on the synthesis of the epoxy-based composites with graphene fillers and testing their electromagnetic shielding efficiency by the quasi-optic free-space method in the extremely high frequency (EHF) band (220 - 325 GHz). The curing adhesive composites were produced by a scalable technique with a mixture of single-layer and few-layer graphene layers of a few-micron lateral dimensions. It…
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We report on the synthesis of the epoxy-based composites with graphene fillers and testing their electromagnetic shielding efficiency by the quasi-optic free-space method in the extremely high frequency (EHF) band (220 - 325 GHz). The curing adhesive composites were produced by a scalable technique with a mixture of single-layer and few-layer graphene layers of a few-micron lateral dimensions. It was found that the electromagnetic transmission, T, is low even at small concentrations of graphene fillers: T<1% at frequency of 300 GHz for a composite with only 1 wt% of graphene. The main shielding mechanism in composites with the low graphene loading is absorption. The composites of 1 mm thickness and graphene loading of 8 wt% provide excellent electromagnetic shielding of 70 dB in the sub-terahertz EHF frequency with negligible energy reflection to the environment. The developed lightweight adhesive composites with graphene fillers can be used as electromagnetic absorbers in the high-frequency microwave radio relays, microwave remote sensors, millimeter wave scanners, and wireless local area networks.
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Submitted 13 April, 2020;
originally announced April 2020.
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Properties of Shape-Engineered Phoxonic Crystals: Brillouin-Mandelstam Spectroscopy and Ellipsometry Study
Authors:
Chun Yu Tammy Huang,
Fariborz Kargar,
Topojit Debnath,
Bishwajit Debnath,
Michael D. Valentin,
Ron Synowicki,
Stefan Schoeche,
Roger K. Lake,
Alexander A. Balandin
Abstract:
We report the results of Brillouin-Mandelstam spectroscopy and Mueller matrix spectroscopic ellipsometry of the nanoscale "pillar with the hat" periodic silicon structures, revealing intriguing phononic and photonic properties. It has been theoretically shown that periodic structures with properly tuned dimensions can act simultaneously as phononic and photonic - phoxonic - crystals, strongly affe…
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We report the results of Brillouin-Mandelstam spectroscopy and Mueller matrix spectroscopic ellipsometry of the nanoscale "pillar with the hat" periodic silicon structures, revealing intriguing phononic and photonic properties. It has been theoretically shown that periodic structures with properly tuned dimensions can act simultaneously as phononic and photonic - phoxonic - crystals, strongly affecting the light-matter interactions. Acoustic phonon states can be tuned by external boundaries, either as a result of phonon confinement effects in individual nanostructures, or as a result of artificially induced external periodicity, as in the phononic crystals. The shape of the nanoscale pillar array was engineered to ensure the interplay of both effects. The Brillouin-Mandelstam spectroscopy data indicated strong flattening of the acoustic phonon dispersion in the frequency range from 2 GHz to 20 GHz and the phonon wave vector extending to the higher-order Brillouin zones. The specifics of the phonon dispersion dependence on the pillar arrays orientation suggest the presence of both periodic modulation and spatial localization effects for the acoustic phonons. The ellipsometry data reveal a distinct scatter pattern of four-fold symmetry due to nanoscale periodicity of the pillar arrays. Our results confirm the dual functionality of the nanostructured shape-engineered structure and indicate a possible new direction for fine-tuning the light-matter interaction in the next generation of photonic, optoelectronic, and phononic devices.
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Submitted 3 March, 2020;
originally announced March 2020.
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Amplitude and Phase Noise of Magnons
Authors:
Sergey Rumyantsev,
Michael Balinskiy,
Fariborz Kargar,
Alexander Khitun,
Alexander A. Balandin
Abstract:
The low-frequency amplitude and phase noise spectra of magnetization waves, i.e. magnons, was measured in the yttrium iron garnet (YIG) waveguides. This type of noise, which originates from the fluctuations of the physical properties of the YIG crystals, has to be taken into account in the design of YIG-based RF generators and magnonic devices for data processing, sensing and imaging applications.…
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The low-frequency amplitude and phase noise spectra of magnetization waves, i.e. magnons, was measured in the yttrium iron garnet (YIG) waveguides. This type of noise, which originates from the fluctuations of the physical properties of the YIG crystals, has to be taken into account in the design of YIG-based RF generators and magnonic devices for data processing, sensing and imaging applications. It was found that the amplitude noise level of magnons depends strongly on the power level, increasing sharply at the on-set of nonlinear dissipation. The noise spectra of both the amplitude and phase noise have the Lorentzian shape with the characteristic frequencies below 100 Hz.
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Submitted 30 August, 2019;
originally announced September 2019.
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Phonon and Thermal Properties of Quasi-Two-Dimensional FePS3 and MnPS3 Antiferromagnetic Semiconductor Materials
Authors:
Fariborz Kargar,
Ece Aytan,
Subhajit Ghosh,
Jonathan Lee,
Michael Gomez,
Yuhang Liu,
Andres Sanchez Magana,
Zahra Barani Beiranvand,
Bishwajit Debnath,
Richard Wilson,
Roger K. Lake,
Alexander A. Balandin
Abstract:
We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are n…
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We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are not detectable via visible Raman light scattering. The thermal conductivity of FePS3 and MnPS3 thin films was measured by two different techniques: the steady-state Raman optothermal and transient time-resolved magneto-optical Kerr effect. The Raman optothermal measurements provided the orientation-average thermal conductivity of FePS3 to be 1.35 W/mK at room temperature. The transient measurements revealed that the through-plane and in-plane thermal conductivity of FePS3 is 0.85 W/mK and 2.7 W/mK, respectively. The films of MnPS3 have higher thermal conductivity of 1.1 W/mK through-plane and 6.3 W/mK in-plane. The data obtained by both techniques reveal strong thermal anisotropy of the films and the dominant contribution of phonons to heat conduction. Our results are important for the proposed applications of the antiferromagnetic semiconductor thin films in spintronic devices.
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Submitted 14 August, 2019;
originally announced August 2019.
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Thermal Properties of the Binary-Filler Composites with Few-Layer Graphene and Copper Nanoparticles
Authors:
Zahra Barani,
Amirmahdi Mohammadzadeh,
Adane Geremew,
Chun Yu Tammy Huang,
Devin Coleman,
Lorenzo Mangolini,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
The thermal properties of an epoxy-based binary composites comprised of graphene and copper nanoparticles are reported. It is found that the "synergistic" filler effect, revealed as a strong enhancement of the thermal conductivity of composites with the size-dissimilar fillers, has a well-defined filler loading threshold. The thermal conductivity of composites with a moderate graphene concentratio…
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The thermal properties of an epoxy-based binary composites comprised of graphene and copper nanoparticles are reported. It is found that the "synergistic" filler effect, revealed as a strong enhancement of the thermal conductivity of composites with the size-dissimilar fillers, has a well-defined filler loading threshold. The thermal conductivity of composites with a moderate graphene concentration of ~15 wt% exhibits an abrupt increase as the loading of copper nanoparticles approaches ~40 wt%, followed by saturation. The effect is attributed to intercalation of spherical copper nanoparticles between the large graphene flakes, resulting in formation of the highly thermally conductive percolation network. In contrast, in composites with a high graphene concentration, ~40 wt%, the thermal conductivity increases linearly with addition of copper nanoparticles. The electrical percolation is observed at low graphene loading, less than 7 wt.%, owing to the large aspect ratio of graphene. At all concentrations of the fillers, below and above the electrical percolation threshold, the thermal transport is dominated by phonons. The obtained results shed light on the interaction between graphene fillers and copper nanoparticles in the composites and demonstrate potential of such hybrid epoxy composites for practical applications in thermal interface materials and adhesives.
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Submitted 21 May, 2019;
originally announced May 2019.
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Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices
Authors:
A. Geremew,
S. Rumyantsev,
F. Kargar,
B. Debnath,
A. Nosek,
M. Bloodgood,
M. Bockrath,
T. Salguero,
R. K. Lake,
A. A. Balandin
Abstract:
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectrosco…
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We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of heat dissipation suggest that Joule heating plays a dominant role in the electric-field induced transitions in the tested 1T-TaS2 devices on Si/SiO2 substrates. The possibility of electrical switching among four different phases of 1T-TaS2 is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in materials.
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Submitted 14 March, 2019;
originally announced March 2019.
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Thermal and Electrical Properties of Hybrid Composites with Graphene and Boron Nitride Fillers
Authors:
Jacob S. Lewis,
Zahra Barani,
Andres Sanchez Magana,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
We report on the thermal and electrical properties of hybrid epoxy composites with graphene and boron nitride fillers. The thicknesses, lateral dimensions, and aspect ratios of each filler material were intentionally selected for geometric similarity to one another, in contrast to prior studies that utilized dissimilar filler geometries to achieve a "synergistic" effect. We demonstrate that the el…
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We report on the thermal and electrical properties of hybrid epoxy composites with graphene and boron nitride fillers. The thicknesses, lateral dimensions, and aspect ratios of each filler material were intentionally selected for geometric similarity to one another, in contrast to prior studies that utilized dissimilar filler geometries to achieve a "synergistic" effect. We demonstrate that the electrically-conductive graphene and electrically-insulating boron nitride fillers allow one to effectively engineer the thermal and electrical conductivities of their resulting composites. By varying the constituent fraction of boron nitride to graphene in a composite with ~44% total filler loading, one can tune the thermal conductivity enhancement from a factor of x15 to x35 and increase the electrical conductivity by many orders of magnitude. The obtained results are important for the development of next-generation thermal interface materials with controllable electrical properties necessary for applications requiring either electrical grounding or insulation.
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Submitted 3 March, 2019;
originally announced March 2019.
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Proton-Irradiation-Immune Electronics Implemented with Two-Dimensional Charge-Density-Wave Devices
Authors:
A. Geremew,
F. Kargar,
E. X. Zhang,
S. E. Zhao,
E. Aytan,
M. A. Bloodgood,
T. T. Salguero,
S. Rumyantsev,
A. Fedoseyev,
D. M. Fleetwood,
A. A. Balandin
Abstract:
Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic…
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Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic protons. Modern electronics based on semiconductors - even those specially designed for radiation hardness - remain highly susceptible to proton damage. Here we demonstrate that room temperature (RT) charge-density-wave (CDW) devices with quasi-two-dimensional (2D) 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 10^14 H+cm^2. Current-voltage I-V characteristics of these 2D CDW devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other 2D devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these "all-metallic" CDW devices can be attributed to their two-terminal design, quasi-2D nature of the active channel, and high concentration of charge carriers in the utilized CDW phases. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.
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Submitted 2 January, 2019;
originally announced January 2019.
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Graphene Composites with Dual Functionality: Electromagnetic Shielding and Thermal Management
Authors:
Fariborz Kargar,
Zahra Barani,
Michael G. Balinskiy,
Andres Sanchez Magana,
Jacob S. Lewis,
Alexander A. Balandin
Abstract:
We report on the synthesis and characterization of the epoxy-based composites with the few-layer graphene fillers, which are capable of the duel functional applications. It was found that composites with the certain types of few-layer graphene fillers reveal an efficient total electromagnetic interference shielding, SE~45 dB, in the important X-band frequency range, f=8.2 GHz - 12.4 GHz, while sim…
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We report on the synthesis and characterization of the epoxy-based composites with the few-layer graphene fillers, which are capable of the duel functional applications. It was found that composites with the certain types of few-layer graphene fillers reveal an efficient total electromagnetic interference shielding, SE~45 dB, in the important X-band frequency range, f=8.2 GHz - 12.4 GHz, while simultaneously providing the high thermal conductivity, K = 8 W/mK, which is a factor of x35 larger than that of the base matrix material. The efficiency of the dual functional application depends on the filler characteristics: thickness, lateral dimensions, aspect ratio and concentration. Graphene loading fractions above the percolation threshold allow for strong enhancement of both the electromagnetic interference shielding and heat conduction properties. Interestingly, graphene composites can block the electromagnetic energy even below the percolation threshold, remaining electrically insulating, which is an important feature for some types of thermal interface materials. The dual functionality of the graphene composites can substantially improve the electromagnetic shielding and thermal management of the airborne systems while simultaneously reducing their weight and cost.
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Submitted 9 August, 2018;
originally announced August 2018.
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Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices
Authors:
G. Liu,
E. X. Zhang,
C. D. Liang,
M. A. Bloodgood,
T. T. Salguero,
D. M. Fleetwood,
A. A. Balandin
Abstract:
The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up…
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The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T-TaS2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T-TaS2, are promising for applications in high radiation environments.
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Submitted 18 October, 2017;
originally announced December 2017.
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Magnetometer Based On Spin Wave Interferometer
Authors:
M. Balynsky,
D. Gutierrez,
H. Chiang,
A. Kozhevnikov,
Y. Filimonov,
A. A. Balandin,
A. Khitun
Abstract:
We describe magnetic field sensor based on spin wave interferometer. Its sensing element consists of a magnetic cross junction with four micro-antennas fabricated at the edges. Two of these antennas are used for spin wave excitation and two others antennas are used for the detection of the inductive voltage produced by the interfering spin waves. Two waves propagating in the orthogonal arms of the…
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We describe magnetic field sensor based on spin wave interferometer. Its sensing element consists of a magnetic cross junction with four micro-antennas fabricated at the edges. Two of these antennas are used for spin wave excitation and two others antennas are used for the detection of the inductive voltage produced by the interfering spin waves. Two waves propagating in the orthogonal arms of the cross may accumulate significantly different phase shifts depending on the magnitude and the direction of the external magnetic field. This phenomenon is utilized for magnetic field sensing. The sensitivity has maximum at the destructive interference condition, where a small change of the external magnetic field results in a drastic increase of the inductive voltage as well as the change of the output phase. We report experimental data obtained on a micrometer scale Y3Fe2(FeO4)3 cross structure. The change of the inductive voltage near the destructive interference point exceeds 40 dB per 1 Oe. At the same time, the phase of the output exhibit a π-phase shift within 1 Oe. The data are collected for three different orientations of the sensor in magnetic field at room temperature. Taking into account low thermal noise in ferrite structures, the maximum sensitivity of spin wave magnetometer may exceed atta Tesla. Other appealing advantages include compactness, fast data acquisition and wide temperature operating range. The physical limits of spin wave interferometers are also discussed.
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Submitted 23 November, 2016;
originally announced November 2016.
