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Tutorial on Silicon Photonics Integrated Platform Fiber Edge Coupling
Authors:
Sergey S. Avdeev,
Aleksandr S. Baburin,
Evgeniy V. Sergeev,
Alexei B. Kramarenko,
Arseniy V. Belyaev,
Danil V. Kushnev,
Kirill A. Buzaverov,
Ilya A. Stepanov,
Sergey V. Bukatin,
Ali Sh. Amiraslanov,
Evgeniy S. Lotkov,
Dmitriy A. Baklykov,
Ilya A. Rodionov
Abstract:
Photonic integrated circuits (PICs) play a crucial role in almost every aspect of modern life, such as data storage, telecommunications, medical diagnostics, green energy, autonomous driving, agriculture, and high-performance computing. To fully harness their benefits, an efficient coupling mechanism is required to successfully launch light into waveguides from fibers. This study introduces low-lo…
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Photonic integrated circuits (PICs) play a crucial role in almost every aspect of modern life, such as data storage, telecommunications, medical diagnostics, green energy, autonomous driving, agriculture, and high-performance computing. To fully harness their benefits, an efficient coupling mechanism is required to successfully launch light into waveguides from fibers. This study introduces low-loss coupling strategies and their implementation for a silicon nitride integrated platform. Here we present an overview of coupling technologies, optimized designs, and a tutorial on manufacturing techniques for inverted tapers, which enable effective coupling for both transverse-magnetic and transverse-electric modes. The optimized coupling losses for the UHNA-7 fiber and the inverted taper Si3N4 coupler reached -0.81 dB at 1550 nm per connection for single-mode waveguides with 220x1200 nm cross section. The measured coupling losses in the inverted taper coupler with a standard single-mode fiber were -3.28 dB at 1550 nm per connection for the same platform.
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Submitted 20 May, 2024;
originally announced May 2024.
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Silicon nitride integrated photonics from visible to mid-infrared spectra
Authors:
Kirill A. Buzaverov,
Aleksandr S. Baburin,
Evgeny V. Sergeev,
Sergey S. Avdeev,
Evgeniy S. Lotkov,
Sergey V. Bukatin,
Ilya A. Stepanov,
Aleksey B. Kramarenko,
Ali Sh. Amiraslanov,
Danil V. Kushnev,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number of Si3N4 integrated photonics platform applications is constantly growing including the Internet of Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR) devices, hybrid neuromorphic and quantum computing. Their heterogeneo…
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Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number of Si3N4 integrated photonics platform applications is constantly growing including the Internet of Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR) devices, hybrid neuromorphic and quantum computing. Their heterogeneous integration with a III-V platform leads to a new advanced large scale PICs with thousands of elements. Here, we review key trends in Si3N4 integrated circuits technology and fill an information gap in the field of state-of-the-art photonic devices operating from visible to mid-infrared spectra. A comprehensive overview of Si3N4 integrared circtuis microfabrication process details (deposition, lithography, etching, etc.) is introduced. Finally, we point out the limits and challenges of silicon nitride photonics performance in an ultrawide range providing routes and prospects for their future scaling and optimization.
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Submitted 16 May, 2024;
originally announced May 2024.
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Beyond single-crystalline metals: ultralow-loss silver films on lattice-mismatched substrates
Authors:
Aleksandr S. Baburin,
Dmitriy O. Moskalev,
Evgeniy S. Lotkov,
Olga S. Sorokina,
Dmitriy A. Baklykov,
Sergey S. Avdeev,
Kirill A. Buzaverov,
Georgiy M. Yankovskii,
Alexander V. Baryshev,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
High-quality factor plasmonic devices are crucial components in the fields of nanophotonics, quantum computing and sensing. The majority of these devices are required to be fabricated on non-lattice matched or transparent amorphous substrates. Plasmonic devices quality factor is mainly defined by ohmic losses, scattering losses at grain boundaries, and in-plane plasmonic scattering losses of a met…
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High-quality factor plasmonic devices are crucial components in the fields of nanophotonics, quantum computing and sensing. The majority of these devices are required to be fabricated on non-lattice matched or transparent amorphous substrates. Plasmonic devices quality factor is mainly defined by ohmic losses, scattering losses at grain boundaries, and in-plane plasmonic scattering losses of a metal - substrate system. Here, we demonstrate the deposition technique to e-beam evaporate ultralow-loss silver thin films on transparent lattice-mismatched substrates. The process is based on evolutionary selection growth. The key feature of our approach is a well-defined control of deposition on a cooled substrate, self-crystallization and subsequent annealing for precise stress relaxation that promote further grains growth. We are able to deposit 100-nm thick ultraflat polycrystalline silver films with micrometer-scale grains and ultralow optical losses. Finally, we show ultra-high-quality factor plasmonic silver nanostructures on transparent lattice-mismatched substrate comparable to epitaxial silver. This can be of the great interest for high performance or single-molecule optical sensorics applications.
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Submitted 27 October, 2022;
originally announced December 2022.
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Low-loss silicon nitride photonic ICs for single-photon applications
Authors:
Kirill A. Buzaverov,
Aleksandr S. Baburin,
Evgeny V. Sergeev,
Sergey S. Avdeev,
Evgeniy S. Lotkov,
Mihail Andronik,
Victoria E. Stukalova,
Dmitry A. Baklykov,
Ivan V. Dyakonov,
Nikolay N. Skryabin,
Mikhail Yu. Saygin,
Sergey P. Kulik,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report…
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Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220x550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO2 cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications.
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Submitted 28 October, 2022;
originally announced October 2022.
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Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nano-Cavity
Authors:
Xiaohui Xu,
Abhishek. B. Solanki,
Demid Sychev,
Xingyu Gao,
Samuel Peana,
Aleksandr S. Baburin,
Karthik Pagadala,
Zachariah O. Martin,
Sarah N. Chowdhury,
Yong P. Chen,
Ilya A. Rodionov,
Alexander V. Kildishev,
Tongcang Li,
Pramey Upadhyaya,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves…
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Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves its spin coherence properties when placed at nanometer-scale distances from the hBN surface, enabling nanometer-scale quantum sensing. On the other hand, the low quantum efficiency of VB- has hindered its use in practical applications. Several studies have reported improving the overall quantum efficiency of VB- defects using plasmonic effects; however, the overall enhancements of up to 17 times reported to date are relatively modest. In this study, we explore and demonstrate much higher emission enhancements of VB- with ultralow-loss nano-patch antenna (NPA) structures. An overall intensity enhancement of up to 250 times is observed for NPA-coupled VB- defects. Since the laser spot exceeds the area of the NPA, where the enhancement occurs, the actual enhancement provided by the NPA is calculated to be ~1685 times, representing a significant increase over the previously reported results. Importantly, the optically detected magnetic resonance (ODMR) contrast is preserved at such exceptionally strong enhancement. Our results not only establish NPA-coupled VB- defects as high-resolution magnetic field sensors operating at weak laser powers, but also provide a promising approach to obtaining single VB- defects.
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Submitted 17 July, 2022;
originally announced July 2022.
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Deterministic integration of single nitrogen-vacancy centers into nanopatch antennas
Authors:
Simeon I. Bogdanov,
Oksana A. Makarova,
Alexei S. Lagutchev,
Deesha Shah,
Chin-Cheng Chiang,
Soham Saha,
Alexandr S. Baburin,
Ilya A. Ryzhikov,
Ilya A. Rodionov,
Alexander V. Kildishev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Quantum emitters coupled to plasmonic nanoantennas produce single photons at unprecedentedly high rates in ambient conditions. This enhancement of quantum emitters' radiation rate is based on the existence of optical modes with highly sub-diffraction volumes supported by plasmonic gap nanoantennas. Nanoantennas with gap sizes on the order of few nanometers have been typically produced using variou…
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Quantum emitters coupled to plasmonic nanoantennas produce single photons at unprecedentedly high rates in ambient conditions. This enhancement of quantum emitters' radiation rate is based on the existence of optical modes with highly sub-diffraction volumes supported by plasmonic gap nanoantennas. Nanoantennas with gap sizes on the order of few nanometers have been typically produced using various self-assembly or random assembly techniques. Yet, the difficulty of controllably fabricate nanoantennas with the smallest mode sizes coupled to pre-characterized single emitters until now has remained a serious issue plaguing the development of quantum plasmonic devices. We demonstrate the transfer of nanodiamonds with single nitrogen-vacancy (NV) centers to an epitaxial silver substrate and their subsequent deterministic coupling to plasmonic gap nanoantennas. Through fine control of the assembled nanoantenna geometry, a dramatic shortening of the NV fluorescence lifetime was achieved. We furthermore show that by preselecting NV centers exhibiting a photostable spin contrast, a coherent spin dynamics can be measured in the coupled configuration. The demonstrated approach opens unique applications of plasmon-enhanced quantum emitters for integrated quantum information and sensing devices.
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Submitted 15 February, 2019;
originally announced February 2019.
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Plasmonic sensor based on the Ebbesen effect
Authors:
P. N. Melentiev,
A. S. Gritchenko,
A. S. Baburin,
N. A. Orlikovsky,
A. A. Dobronosova,
I. A. Rodionov,
V. I. Balykin
Abstract:
We present a new method for measuring low concentrations and simultaneously small volumes of fluorescent molecules based on the use of the Ebbesen effect of the extraordinary transmission (EOT) of light through an array of nano-holes. In the method the EOT effect is realized at the fluorescence wavelength of the detected molecules with a low transmission of light at the absorption wavelength. The…
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We present a new method for measuring low concentrations and simultaneously small volumes of fluorescent molecules based on the use of the Ebbesen effect of the extraordinary transmission (EOT) of light through an array of nano-holes. In the method the EOT effect is realized at the fluorescence wavelength of the detected molecules with a low transmission of light at the absorption wavelength. The approach allows realizing high level of the sensor sensitivity due to suppression of the inevitable parasitic luminescence of the sensor substrate. The method was demonstrated by detecting an ultra low concentration (at a level of 20 pg/ml (3 p.p.t.)) and an ultra-small volume (about 5 μl) of Cy-5 fluorescent markers in a dimethyl sulfoxide solution.
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Submitted 4 September, 2018;
originally announced September 2018.
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Quantum Engineering of Single-Crystalline Silver Thin Films
Authors:
Ilya A. Rodionov,
Aleksandr S. Baburin,
Aidar R. Gabidullin,
Sergey S. Maklakov,
Swen Peters,
Ilya A. Ryzhikov,
Alexander V. Andriyash
Abstract:
There is a demand for the manufacture of ultra low-loss metallic films with high-quality single crystals and surface for quantum optics and quantum information processing. Many researches are devoted to alternative materials, but silver is by far the most preferred low-loss material at optical and near-IR frequencies. Usually, epitaxial growth is used to deposit single-crystalline silver films, bu…
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There is a demand for the manufacture of ultra low-loss metallic films with high-quality single crystals and surface for quantum optics and quantum information processing. Many researches are devoted to alternative materials, but silver is by far the most preferred low-loss material at optical and near-IR frequencies. Usually, epitaxial growth is used to deposit single-crystalline silver films, but they still suffer from losses and well-known deweting effect. Here we report the two-step approach for e-beam evaporation of atomically smooth single-crystalline metallic films. The proposed method is self-controlled by quantum size effects and is based on the step switch of film growth kinetics between two deposition steps, which allow to overcome the film-surface dewetting. Here we have used it to deposit 35-100 nm thick single-crystalline silver films with sub-100 pm surface roughness and extremely low losses. We anticipate that the proposed approach could be readily adopted for the synthesis of other low-loss single-crystalline metallic thin films.
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Submitted 20 November, 2018; v1 submitted 20 June, 2018;
originally announced June 2018.
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Toward theoretically limited SPP propagation length above two hundred microns on ultra-smooth silver surface
Authors:
Aleksandr S. Baburin,
Aleksey S. Kalmykov,
Roman V. Kirtaev,
Dmitriy V. Negrov,
Dmitriy O. Moskalev,
Ilya A. Ryzhikov,
Pavel N. Melentiev,
Ilya A. Rodionov,
Victor I. Balykin
Abstract:
We demonstrate the optical medium for surface plasmon - polariton waves (SPP) propagation with ultra low losses corresponding to the theoretically limited values. The unique element of the optical medium is an atomically-flat single-crystalline silver thin film which provides extremely low losses. The SPP excited on the surface of such thin films (at 780 nm) is characterized by a SPP propagation l…
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We demonstrate the optical medium for surface plasmon - polariton waves (SPP) propagation with ultra low losses corresponding to the theoretically limited values. The unique element of the optical medium is an atomically-flat single-crystalline silver thin film which provides extremely low losses. The SPP excited on the surface of such thin films (at 780 nm) is characterized by a SPP propagation length equals to 200 um, which is twice longer than previously reported experimental results and corresponds to theoretically limited values for silver films.
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Submitted 28 August, 2018; v1 submitted 20 June, 2018;
originally announced June 2018.
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Ultrabright room-temperature single-photon emission from nanodiamond nitrogen-vacancy centers with sub-nanosecond excited-state lifetime
Authors:
Simeon Bogdanov,
Mikhail Y. Shalaginov,
Alexei Lagutchev,
Chin-Cheng Chiang,
Deesha Shah,
Alexander S. Baburin,
Ilya A. Ryzhikov,
Ilya A. Rodionov,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Ultrafast emission rates obtained from quantum emitters coupled to plasmonic nanoantennas have recently opened fundamentally new possibilities in quantum information and sensing applications. Plasmonic nanoantennas greatly improve the brightness of quantum emitters by dramatically shortening their fluorescence lifetimes. Gap plasmonic nanocavities that support strongly confined modes are of partic…
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Ultrafast emission rates obtained from quantum emitters coupled to plasmonic nanoantennas have recently opened fundamentally new possibilities in quantum information and sensing applications. Plasmonic nanoantennas greatly improve the brightness of quantum emitters by dramatically shortening their fluorescence lifetimes. Gap plasmonic nanocavities that support strongly confined modes are of particular interest for such applications. We demonstrate single-photon emission from nitrogen-vacancy (NV) centers in nanodiamonds coupled to nanosized gap plasmonic cavities with internal mode volumes about 10 000 times smaller than the cubic vacuum wavelength. The resulting structures features sub-nanosecond NV excited-state lifetimes and detected photon rates up to 50 million counts per second. Analysis of the fluorescence saturation allows the extraction of the multi-order excitation rate enhancement provided by the nanoantenna. Efficiency analysis shows that the NV center is producing up to 0.25 billion photons per second in the far-field.
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Submitted 1 December, 2017; v1 submitted 26 November, 2017;
originally announced November 2017.