Reversible single-pulse laser-induced phase change of Sb$_2$S$_3$ thin films: multi-physics modeling and experimental demonstrations
Authors:
Capucine Laprais,
Clément Zrounba,
Julien Bouvier,
Nicholas Blanchard,
Matthieu Bugnet,
Yael Gutiérrez,
Saul Vazquez-Miranda,
Shirly Espinoza,
Peter Thiesen,
Romain Bourrellier,
Aziz Benamrouche,
Nicolas Baboux,
Guillaume Saint-Girons,
Lotfi Berguiga,
Sébastien Cueff
Abstract:
Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such as Sb$_2$S$_3$ emerged as particularly promising low loss PCMs, with both large refractive index modulations and transparency in the visible and NIR. Controlli…
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Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such as Sb$_2$S$_3$ emerged as particularly promising low loss PCMs, with both large refractive index modulations and transparency in the visible and NIR. Controlling the local and reversible phase transition in this material is of major importance for future applications, and an appealing method to do so is to exploit pulsed lasers. Yet, the physics and limits involved in the optical switching of Sb$_2$S$_3$ are not yet well understood. Here, we investigate the reversible laser-induced phase transition of Sb$_2$S$_3$, focusing specifically on the mechanisms that drive the optically induced amorphization, with multi-physics considerations including the optical and thermal properties of the PCM and its environment. We theoretically and experimentally determine the laser energy threshold for reversibly changing the phase of the PCM, not only between fully amorphous and crystalline states but also between partially recrystallized states. We then reveal the non-negligible impact of the material's polycrystallinity and anisotropy on the power thresholds for optical switching. Finally, we address the challenges related to laser amorphization of thick Sb$_2$S$_3$ layers, as well as strategies to overcome them. These results enable a qualitative and quantitative understanding of the physics behind the optically-induced reversible change of phase in Sb$_2$S$_3$ layers.
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Submitted 3 May, 2024;
originally announced May 2024.
A simple method for programming and analyzing multilevel crystallization states in phase-change materials thin film
Authors:
Arnaud Taute,
Sadek Al-Jibouri,
Capucine Laprais,
Stéphane Monfray,
Julien Lumeau,
Antonin Moreau,
Xavier Letartre,
Nicolas Baboux,
Guillaume Saint-Girons,
Lotfi Berguiga,
Sébastien Cueff
Abstract:
We propose and demonstrate a simple method to accurately monitor and program arbitrary states of partial crystallization in phase-change materials (PCMs). The method relies both on the optical absorption in PCMs as well as on the physics of crystallization kinetics. Instead of raising temperature incrementally to increase the fraction of crystallized material, we leverage the time evolution of cry…
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We propose and demonstrate a simple method to accurately monitor and program arbitrary states of partial crystallization in phase-change materials (PCMs). The method relies both on the optical absorption in PCMs as well as on the physics of crystallization kinetics. Instead of raising temperature incrementally to increase the fraction of crystallized material, we leverage the time evolution of crystallization at constant temperatures and couple this to a real-time optical monitoring to precisely control the change of phase. We experimentally demonstrate this scheme by encoding a dozen of distinct states of crystallization in two different PCMs: GST and Sb2S3. We further exploit this time-crystallization for the in-situ analysis of phase change mechanisms and demonstrate that the physics of crystallization in Sb2S3 is fully described by the so-called Johnson-Mehl-Avrami-Kolmogorov formalism. The presented method not only paves the way towards real-time and model-free programming of non-volatile reconfigurable photonic integrated devices, but also provides crucial insights into the physics of crystallization in PCMs.
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Submitted 30 June, 2023;
originally announced June 2023.
