-
Complete quantum control of orbital qubits by phase-controlled stimulated Raman transitions
Authors:
Jun-Yong Yan,
Liang Zhai,
Hans-Georg Babin,
Yuanzhen Li,
Si-Hui Pei,
Moritz Cygorek,
Wei Fang,
Fei Gao,
Andreas D. Wieck,
Arne Ludwig,
Chao-Yuan **,
Da-Wei Wang,
Feng Liu
Abstract:
Complete quantum control of a stationary quantum bit embedded in a quantum emitter is crucial for photonic quantum information technologies. Recently, the orbital degree of freedom in optically active semiconductor quantum dots emerged as a promising candidate. However, the crucial ability to perform arbitrary rotation on orbital qubits remains elusive. Here, we demonstrate complete control of hol…
▽ More
Complete quantum control of a stationary quantum bit embedded in a quantum emitter is crucial for photonic quantum information technologies. Recently, the orbital degree of freedom in optically active semiconductor quantum dots emerged as a promising candidate. However, the crucial ability to perform arbitrary rotation on orbital qubits remains elusive. Here, we demonstrate complete control of hole orbital states in a quantum dot. This is enabled by successfully inducing stimulated Raman transitions within $Λ$ systems connected via radiative Auger transitions. This new capability allows manipulations of polar and azimuth angles of the Bloch vector, as evidenced by Rabi oscillations and Ramsey interference, respectively. Simultaneous control of both parameters is achieved by concurrently varying the amplitude and phase of picosecond Raman pulses, enabling arbitrary unitary rotation of the Bloch vector. Our results establish the orbital states in solid-state quantum emitters as a potentially viable resource for applications in quantum information processing and quantum communication.
△ Less
Submitted 22 March, 2024;
originally announced March 2024.
-
Coherent control of a high-orbital hole in a semiconductor quantum dot
Authors:
Jun-Yong Yan,
Chen Chen,
Xiao-Dong Zhang,
Yu-Tong Wang,
Hans-Georg Babin,
Andreas D. Wieck,
Arne Ludwig,
Yun Meng,
Xiaolong Hu,
Huali Duan,
Wenchao Chen,
Wei Fang,
Moritz Cygorek,
Xing Lin,
Da-Wei Wang,
Chao-Yuan **,
Feng Liu
Abstract:
Coherently driven semiconductor quantum dots are one of the most promising platforms for non-classical light sources and quantum logic gates which form the foundation of photonic quantum technologies. However, to date, coherent manipulation of single charge carriers in quantum dots is limited mainly to their lowest orbital states. Ultrafast coherent control of high-orbital states is obstructed by…
▽ More
Coherently driven semiconductor quantum dots are one of the most promising platforms for non-classical light sources and quantum logic gates which form the foundation of photonic quantum technologies. However, to date, coherent manipulation of single charge carriers in quantum dots is limited mainly to their lowest orbital states. Ultrafast coherent control of high-orbital states is obstructed by the demand for tunable terahertz pulses. To break this constraint, we demonstrate an all-optical method to control high-orbital states of a hole via stimulated Auger process. The coherent nature of the Auger process is proved by Rabi oscillation and Ramsey interference. Harnessing this coherence further enables the investigation of single-hole relaxation mechanism. A hole relaxation time of 161 ps is observed and attributed to the phonon bottleneck effect. Our work opens new possibilities for understanding the fundamental properties of high-orbital states in quantum emitters and develo** new types of orbital-based quantum photonic devices.
△ Less
Submitted 16 July, 2023; v1 submitted 20 December, 2022;
originally announced December 2022.
-
Wafer-Scale Epitaxial Modulation of Quantum Dot Density
Authors:
N. Bart,
C. Dangel,
P. Zajac,
N. Spitzer,
J. Ritzmann,
M. Schmidt,
H. G. Babin,
R. Schott,
S. R. Valentin,
S. Scholz,
Y. Wang,
R. Uppu,
D. Najer,
M. C. Löbl,
N. Tomm,
A. Javadi,
N. O. Antoniadis,
L. Midolo,
K. Müller,
R. J. Warburton,
P. Lodahl,
A. D. Wieck,
J. J. Finley,
A. Ludwig
Abstract:
Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be u…
▽ More
Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/$μm^{2}$ and periods ranging from several millimeters down to at least a few hundred microns. This novel method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.
△ Less
Submitted 9 December, 2021; v1 submitted 20 November, 2020;
originally announced November 2020.
