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Fast electrically switchable large gap quantum spin Hall states in MGe$_2$Z$_4$
Authors:
Rajibul Islam,
Ghulam Hussain,
Rahul Verma,
Mohammad Sadegh Talezadehlari,
Zahir Muhammad,
Bahadur Singh,
Carmine Autieri
Abstract:
Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require materials having large band gap and fast switchable QSH states. By means of in-depth first-principles calculations, we demonstrate the large band gap and fast s…
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Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require materials having large band gap and fast switchable QSH states. By means of in-depth first-principles calculations, we demonstrate the large band gap and fast switchable QSH state in a newly introduced two-dimensional (2D) material family with 1T$^\prime$-MGe$_2$Z$_4$ (M = Mo or W and Z = P or As). The thermodynamically stable 1T$^\prime$-MoGe$_2$Z$_4$ monolayers have a large energy gap around $\sim$237 meV. These materials undergo a phase transition from a QSH insulator to a trivial insulator with a Rashba-like spin splitting under the influence of an out-of-plane electric field, demonstrating the tunability of the band gap and its band topology. Fast topological phase switching in a large gap 1T$^\prime$-MoGe$_2$Z$_4$ QSH insulators has potential applications in low-power devices, quantum computation, and quantum communication.
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Submitted 13 April, 2023; v1 submitted 11 November, 2022;
originally announced November 2022.
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Emergence of Rashba splitting and spin-valley properties in Janus MoGeSiP2As2 and WGeSiP2As2 monolayers
Authors:
Ghulam Hussaina,
Abdus Samad,
Majeed Ur Rehmanc,
Giuseppe Cuono,
Carmine Autieri
Abstract:
First-principles calculations are performed to study the structural stability and spintronics properties of Janus MoGeSiP2As2 and WGeSiP2As2 monolayers. The high cohesive energies and the stable phonon modes confirm that both these structures are experimentally accessible. In contrast to pristine MoSi2P4, the Janus monolayers demonstrate reduced direct bandgaps and large spin-split states at K/-K.…
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First-principles calculations are performed to study the structural stability and spintronics properties of Janus MoGeSiP2As2 and WGeSiP2As2 monolayers. The high cohesive energies and the stable phonon modes confirm that both these structures are experimentally accessible. In contrast to pristine MoSi2P4, the Janus monolayers demonstrate reduced direct bandgaps and large spin-split states at K/-K. In addition, their spin textures exposed that breaking the mirror symmetry brings Rashba-type spin splitting in the systems which can be increased by using higher atomic spin-orbit coupling. The large valley spin splitting together with the Rashba splitting in these Janus monolayer structures can make a remarkable contribution to semiconductor valleytronics and spintronics.
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Submitted 20 June, 2022;
originally announced June 2022.
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Exchange interactions of CaMnO3 in the bulk and at the surface
Authors:
Samara Keshavarz,
Yaroslav Kvashnin,
Debora Rodrigues,
Manuel Pereiro,
Igor Di Marco,
Carmine Autieri,
Lars Nordstrom,
Igor Solovyev,
Biplab Sanyal,
Olle Eriksson
Abstract:
In this work, we present electronic and magnetic properties of CaMnO3 (CMO) as obtained from ab initio calculations. We identify the preferable magnetic order by means of density functional theory plus Hubbard U calculations and extract the effective exchange parameters (Jij's) using the magnetic force theorem. We find that the effects of geometrical relaxation at the surface as well as the change…
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In this work, we present electronic and magnetic properties of CaMnO3 (CMO) as obtained from ab initio calculations. We identify the preferable magnetic order by means of density functional theory plus Hubbard U calculations and extract the effective exchange parameters (Jij's) using the magnetic force theorem. We find that the effects of geometrical relaxation at the surface as well as the change of crystal field are very strong and are able to influence the lower energy magnetic configuration. In particular, our analysis reveals that the exchange interaction between the Mn atoms belonging to the surface and the subsurface layers is very sensitive to the structural changes. An earlier study [A. Filippetti and W.E. Pickett, Phys. Rev. Lett. 83, 4184 (1999)] suggested that this coupling is ferromagnetic and gives rise to the spin flip process on the surface of CMO. In our work we confirm their finding for an unrelaxed geometry, but once the structural relaxations are taken into account, this exchange coupling changes its sign. Thus, we suggest that the surface of CMO should have the same G-type antiferromagnetic order as in the bulk. Finally, we show that the suggested SF can be induced in the system by introducing an excess of electrons.
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Submitted 25 October, 2016;
originally announced October 2016.
