NWChem: Past, Present, and Future
Authors:
E. Aprà,
E. J. Bylaska,
W. A. de Jong,
N. Govind,
K. Kowalski,
T. P. Straatsma,
M. Valiev,
H. J. J. van Dam,
Y. Alexeev,
J. Anchell,
V. Anisimov,
F. W. Aquino,
R. Atta-Fynn,
J. Autschbach,
N. P. Bauman,
J. C. Becca,
D. E. Bernholdt,
K. Bhaskaran-Nair,
S. Bogatko,
P. Borowski,
J. Boschen,
J. Brabec,
A. Bruner,
E. Cauët,
Y. Chen
, et al. (89 additional authors not shown)
Abstract:
Specialized computational chemistry packages have permanently reshaped the landscape of chemical and materials science by providing tools to support and guide experimental efforts and for the prediction of atomistic and electronic properties. In this regard, electronic structure packages have played a special role by using first-principledriven methodologies to model complex chemical and materials…
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Specialized computational chemistry packages have permanently reshaped the landscape of chemical and materials science by providing tools to support and guide experimental efforts and for the prediction of atomistic and electronic properties. In this regard, electronic structure packages have played a special role by using first-principledriven methodologies to model complex chemical and materials processes. Over the last few decades, the rapid development of computing technologies and the tremendous increase in computational power have offered a unique chance to study complex transformations using sophisticated and predictive many-body techniques that describe correlated behavior of electrons in molecular and condensed phase systems at different levels of theory. In enabling these simulations, novel parallel algorithms have been able to take advantage of computational resources to address the polynomial scaling of electronic structure methods. In this paper, we briefly review the NWChem computational chemistry suite, including its history, design principles, parallel tools, current capabilities, outreach and outlook.
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Submitted 26 May, 2020; v1 submitted 24 April, 2020;
originally announced April 2020.
Nearly defect-free dynamical models of disordered solids: The case of amorphous silicon
Authors:
Raymond Atta-Fynn,
Parthapratim Biswas
Abstract:
It is widely accepted in the materials modeling community that defect-free realistic networks of amorphous silicon cannot be prepared by quenching from a molten state of silicon using classical or ab initio molecular-dynamics (MD) simulations. In this work, we address this long-standing problem by producing nearly defect-free ultra-large models of amorphous silicon, consisting of up to half-a-mill…
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It is widely accepted in the materials modeling community that defect-free realistic networks of amorphous silicon cannot be prepared by quenching from a molten state of silicon using classical or ab initio molecular-dynamics (MD) simulations. In this work, we address this long-standing problem by producing nearly defect-free ultra-large models of amorphous silicon, consisting of up to half-a-million atoms, using classical molecular-dynamics simulations. The structural, topological, electronic, and vibrational properties of the models are presented and compared with experimental data. A comparison of the models with those obtained from using the modified Wooten-Winer-Weaire bond-switching algorithm shows that the models are on par with the latter, which were generated via event-based total-energy relaxations of atomistic networks in the configuration space. The MD models produced in this work represent the highest quality of amorphous-silicon networks so far reported in the literature using molecular-dynamics simulations.
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Submitted 14 March, 2018;
originally announced March 2018.
