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Resistive Read-out in Thin Silicon Sensors with Internal Gain
Authors:
N. Cartiglia,
F. Moscatelli,
R. Arcidiacono,
P. Asenov,
M. Costa,
T. Croci,
M. Ferrero,
A. Fondacci,
L. Lanteri,
L. Menzio,
A. Morozzi,
R. Mulargia,
D. Passeri,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with l…
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Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with large pixels. LGAD- and RSD- based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers. New results obtained with sensors belonging to the second FBK production of RSD (RSD2) demonstrate how a combined resolution of 30 ps and 30 \microns can be obtained with pixels as large as $1 \times 1 $ mm$^2$.
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Submitted 7 January, 2023;
originally announced January 2023.
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Solid State Detectors and Tracking for Snowmass
Authors:
A. Affolder,
A. Apresyan,
S. Worm,
M. Albrow,
D. Ally,
D. Ambrose,
E. Anderssen,
N. Apadula,
P. Asenov,
W. Armstrong,
M. Artuso,
A. Barbier,
P. Barletta,
L. Bauerdick,
D. Berry,
M. Bomben,
M. Boscardin,
J. Brau,
W. Brooks,
M. Breidenbach,
J. Buckley,
V. Cairo,
R. Caputo,
L. Carpenter,
M. Centis-Vignali
, et al. (110 additional authors not shown)
Abstract:
Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the…
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Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the development of new techniques, materials and technologies in order to fully exploit their physics potential. In this article we summarize the discussions and conclusions of the 2022 Snowmass Instrumentation Frontier subgroup on Solid State and Tracking Detectors (Snowmass IF03).
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Submitted 19 October, 2022; v1 submitted 8 September, 2022;
originally announced September 2022.
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A Compensated Design of the LGAD Gain Layer
Authors:
Valentina Sola,
Roberta Arcidiacono,
Patrick Asenov,
Giacomo Borghi,
Maurizio Boscardin,
Nicolò Cartiglia,
Matteo Centis Vignali,
Tommaso Croci,
Marco Ferrero,
Alessandro Fondacci,
Giulia Gioachin,
Simona Giordanengo,
Leonardo Lantieri,
Marco Mandurrino,
Luca Menzio,
Vincenzo Monaco,
Arianna Morozzi,
Francesco Moscatelli,
Daniele Passeri,
Nadia Pastrone,
Giovanni Paternoster,
Federico Siviero,
Amedeo Staiano,
Marta Tornago
Abstract:
In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim…
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In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor do** will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$.
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Submitted 1 September, 2022;
originally announced September 2022.
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Simulations of Silicon Radiation Detectors for High Energy Physics Experiments
Authors:
B. Nachman,
T. Peltola,
P. Asenov,
M. Bomben,
R. Lipton,
F. Moscatelli,
E. A. Narayanan,
F. R. Palomo,
D. Passeri,
S. Seidel,
X. Shi,
J. Sonneveld
Abstract:
Silicon radiation detectors are an integral component of current and planned collider experiments in high energy physics. Simulations of these detectors are essential for deciding operational configurations, for performing precise data analysis, and for develo** future detectors. In this white paper, we briefly review the existing tools and discuss challenges for the future that will require res…
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Silicon radiation detectors are an integral component of current and planned collider experiments in high energy physics. Simulations of these detectors are essential for deciding operational configurations, for performing precise data analysis, and for develo** future detectors. In this white paper, we briefly review the existing tools and discuss challenges for the future that will require research and development to be able to cope with the foreseen extreme radiation environments of the High Luminosity runs of the Large Hadron Collider and future hadron colliders like FCC-hh and SPPC.
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Submitted 29 December, 2022; v1 submitted 11 March, 2022;
originally announced March 2022.
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Study of p-type silicon MOS capacitors at HL-LHC radiation levels through cobalt-60 gamma source and TCAD simulation
Authors:
Patrick Asenov,
Panagiotis Assiouras,
Argiro Boziari,
Konstantinos Filippou,
Ioannis Kazas,
Aristotelis Kyriakis,
Dimitrios Loukas,
Arianna Morozzi,
Francesco Moscatelli,
Daniele Passeri
Abstract:
During the era of the High Luminosity LHC (HL-LHC) the devices in its experiments will be subjected to increased radiation levels with high fluxes of neutrons and charged hadrons, especially in the inner detectors. A systematic program of radiation tests with neutrons and charged hadrons is being carried out by the CMS and ATLAS Collaborations in view of the upgrade of the experiments, in order to…
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During the era of the High Luminosity LHC (HL-LHC) the devices in its experiments will be subjected to increased radiation levels with high fluxes of neutrons and charged hadrons, especially in the inner detectors. A systematic program of radiation tests with neutrons and charged hadrons is being carried out by the CMS and ATLAS Collaborations in view of the upgrade of the experiments, in order to cope with the higher luminosity at HL-LHC and the associated increase in the pile-up events and radiation fluxes. In this work, results from a complementary radiation study with $^{60}$Co-$γ$ photons are presented. The doses are equivalent to those that the outer layers of the silicon tracker systems of the two big LHC experiments will be subjected to. The devices in this study are float-zone oxygenated p-type MOS capacitors. The results of CV measurements on these devices are presented as a function of the total absorbed radiation dose following a specific annealing protocol. The measurements are compared with the results of a TCAD simulation.
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Submitted 4 March, 2021;
originally announced March 2021.
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Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations
Authors:
P. Assiouras,
P. Asenov,
A. Kyriakis,
D. Loukas
Abstract:
We have developed a software for fast calculation of capacitances in planar silicon pixel and strip sensors, based on 3D and 2D numerical solutions of the Laplace's equation. The validity of the 2D calculations was checked with capacitances measurements on Multi-Geometry Silicon Strip Detectors (MSSD). The 3D calculations were tested by comparison with pixel sensors capacitance measurements from l…
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We have developed a software for fast calculation of capacitances in planar silicon pixel and strip sensors, based on 3D and 2D numerical solutions of the Laplace's equation. The validity of the 2D calculations was checked with capacitances measurements on Multi-Geometry Silicon Strip Detectors (MSSD). The 3D calculations were tested by comparison with pixel sensors capacitance measurements from literature. In both cases the Laplace equation results were compared with simulations obtained from the TCAD Sentaurus suite. The developed software is a useful tool for fast estimation of interstrip, interpixel and backplane capacitances, saving computation time, as a first approximation before using a more sophisticated platform for more accurate results if needed.
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Submitted 14 October, 2020; v1 submitted 24 August, 2020;
originally announced August 2020.
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Commissioning and simulation of CHROMIE, a high-rate test beam telescope
Authors:
Patrick Asenov
Abstract:
The upgrade of the LHC to the High-Luminosity LHC (HL-LHC) is expected to increase the current instantaneous luminosity by a factor of 5 to 7, providing the opportunity to study rare processes and measure precisely the standard model parameters. To cope with the increase in pile-up (up to 200), particle density and radiation, CMS will build new silicon tracking devices with higher granularity (to…
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The upgrade of the LHC to the High-Luminosity LHC (HL-LHC) is expected to increase the current instantaneous luminosity by a factor of 5 to 7, providing the opportunity to study rare processes and measure precisely the standard model parameters. To cope with the increase in pile-up (up to 200), particle density and radiation, CMS will build new silicon tracking devices with higher granularity (to reduce occupancy) and improved radiation hardness. During the R&D period tests performed under beam are a powerful way to develop and examine the behavior of silicon sensors in realistic conditions. The telescopes used up to now have a slow readout (less than 10 kHz) for the needs of the CMS experiment, since the new outer-tracker modules have an effective return-to-zero time of 25 ns (corresponding to a 40 MHz frequency) and a trigger rate of 750 kHz. In order to test the CMS Tracker modules under the LHC nominal rate, a pixel telescope named CHROMIE (CMS High Rate telescOpe MachInE) is designed, built and commissioned at CERN for beam tests with prototype modules for the CMS Phase-2 Tracker upgrade. In this article the design of CHROMIE, the calibration of its modules, and its timing and synchronization aspects are presented, along with the first beam test results. In addition, the tracking algorithm developed for CHROMIE and a preliminary Geant4 simulation study of the telescope under beam are discussed.
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Submitted 6 February, 2020;
originally announced February 2020.