Optimizing the light penetration depth in APDs and SPADs for high gain-bandwidth and ultra-wide spectral response
Authors:
Ahasan Ahamed,
Cesar Bartolo-Perez,
Ahmed Sulaiman Mayet,
Soroush Ghandiparsi,
Gerard Arino-Estrada,
Xiangnan Zhou,
Julien Bec,
Shih-Yuan Wang,
Laura Marcu,
M. Saif Islam
Abstract:
Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering light near the multiplication region where the electric field is the strongest. Such control in the penetration depth for a particular wavelength of light has been previously demonstrated using integrated photon-trappin…
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Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering light near the multiplication region where the electric field is the strongest. Such control in the penetration depth for a particular wavelength of light has been previously demonstrated using integrated photon-trap** nanostructures. In this paper, we show that an optimized periodic nanostructure design can control the penetration depth for a wide range of visible and near-infrared wavelengths simultaneously. A conventional silicon APD structure suffers from high photocarrier loss due to recombination for shorter wavelengths as they are absorbed near the surface region, while silicon has low absorption efficiency for longer wavelengths. This optimized nanostructure design allows shorter wavelengths of light to penetrate deeper into the device, circumventing recombination sites while trap** the longer wavelengths in the thin silicon device by bending the vertically propagating light into horizontal modes. This manipulation of penetration depth improves the absorption in the device, increasing light sensitivity while nanostructures reduce the reflectance from the top surface. While delivery of light near the multiplication region reduces the photogenerated carrier loss and shortens transit time, leading to high multiplication gain in APDs and SPADs over a wide spectral range. These high gain APDs and SPADs will find their potential applications in Time-Of-Flight Positron Emission Tomography (TOF-PET), Fluorescence Lifetime Imaging Microscopy (FLIM), and pulse oximetry where high detection efficiency and high gain-bandwidth is required over a multitude of wavelengths.
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Submitted 19 January, 2022;
originally announced January 2022.
Avalanche Photodetectors with Photon Trap** Structures for Biomedical Imaging Applications
Authors:
Cesar Bartolo-Perez,
Soroush Ghandiparsi,
Ahmed S. Mayet,
Hilal Cansizoglu,
Yang Gao,
Wayesh Qarony,
Ahasan Ahamed,
Shih-Yuan Wang,
Simon R. Cherry,
M. Saif Islam,
Gerard Arino-Estrada
Abstract:
Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we evaluate the gain, detection efficiency, and timing performance of avalanche photodiodes (APD) with photon trap** nanostructures for photons with 45…
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Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we evaluate the gain, detection efficiency, and timing performance of avalanche photodiodes (APD) with photon trap** nanostructures for photons with 450 and 850 nm wavelengths. At 850 nm wavelength, our photon trap** avalanche photodiodes showed 30 times higher gain, an increase from 16% to >60% enhanced absorption efficiency, and a 50% reduction in the full width at half maximum (FWHM) pulse response time close to the breakdown voltage. At 450 nm wavelength, the external quantum efficiency increased from 54% to 82%, while the gain was enhanced more than 20-fold. Therefore, silicon APDs with photon trap** structures exhibited a dramatic increase in absorption compared to control devices. Results suggest very thin devices with fast timing properties and high absorption between the near-ultraviolet and the near infrared region can be manufactured for high-speed applications in biomedical imaging. This study paves the way towards obtaining single photon detectors with photon trap** structures with gains above 10^6 for the entire visible range
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Submitted 27 April, 2021;
originally announced April 2021.
