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HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band predicted by the balance equations method
Authors:
D. V. Ushakov,
A. A. Afonenko,
R. A. Khabibullin,
D. S. Ponomarev,
V. Ya. Aleshkin,
S. V. Morozov,
A. A. Dubinov
Abstract:
HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band with a target wavelength of 36 mkm are theoretically investigated using the balance equations method. The optimized active region designs, which are based on three and two quantum wells, exhibit a peak gain exceeding 100 cm(-1) at 150 K. We analyze the temperature dependences of the peak gain and predict the maximum…
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HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band with a target wavelength of 36 mkm are theoretically investigated using the balance equations method. The optimized active region designs, which are based on three and two quantum wells, exhibit a peak gain exceeding 100 cm(-1) at 150 K. We analyze the temperature dependences of the peak gain and predict the maximum operation temperatures of 170 K and 225 K for three- and two-well designs, respectively. At high temperatures (T > 120 K), the better temperature performance of the two-well design is associated with a larger spatial overlap of the weakly localized lasing wavefunctions as well as a higher population inversion.
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Submitted 11 February, 2020;
originally announced February 2020.
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Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure
Authors:
Alexander A. Dubinov,
Andrey Bylinkin,
Vladimir Ya. Aleshkin,
Victor Ryzhii,
Taiichi Otsuji,
Dmitry Svintsov
Abstract:
The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide geometry for the recently proposed terahertz injection laser based on resonant radiative transitions between tunnel-coupled grapheme layers. We find an optimal number…
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The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forward and optimize the surface plasmonic metal waveguide geometry for the recently proposed terahertz injection laser based on resonant radiative transitions between tunnel-coupled grapheme layers. We find an optimal number of active graphene layer pairs corresponding to the maximum net modal gain. The maximum gain increases with frequency and can be as large as ~ 500 cm-1 at 8 THz, while the threshold length of laser resonator can be as small as ~ 50 mkm. Our findings substantiate the possibility of ultra-compact voltage-tunable graphene-based lasers operating at room temperature.
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Submitted 29 November, 2016;
originally announced November 2016.
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Quantum well-based waveguide for semiconductor lasers
Authors:
V. Ya. Aleshkin,
A. A. Dubinov,
K. E. Kudryavtsev,
A. N. Yablonskiy,
B. N. Zvonkov
Abstract:
In this work we study a possibility of waveguide fabrication on the basis of active quantum wells in semiconductor lasers. The efficiency of such a waveguide for an InP structure with In0.53Ga0.47As quantum wells is demonstrated experimentally. An optically-pumped laser on this basis is realized.
In this work we study a possibility of waveguide fabrication on the basis of active quantum wells in semiconductor lasers. The efficiency of such a waveguide for an InP structure with In0.53Ga0.47As quantum wells is demonstrated experimentally. An optically-pumped laser on this basis is realized.
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Submitted 19 November, 2012;
originally announced November 2012.
