Showing 1–1 of 1 results for author: Alam, M T

Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs

Authors: Md Tahmidul Alam, Chirag Gupta

Abstract: A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices optimized with two field plates. The breakdown voltages were 675V and 915V respectively. Inclusion of field plates near both the gates produced electric field peaks at the opposite ends of the transistor simultaneously. This r… ▽ More A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices optimized with two field plates. The breakdown voltages were 675V and 915V respectively. Inclusion of field plates near both the gates produced electric field peaks at the opposite ends of the transistor simultaneously. This resulted in better electric field management or higher blocking voltage per unit length. Consequently, the 675V monolithic bidirectional HEMT had an impressive 40% improvement in on-resistance than its 650V typical series/parallel counterpart. △ Less

Submitted 1 October, 2023; v1 submitted 10 April, 2023; originally announced April 2023.

Comments: This paper went through a lot of change or update. I wish to submit it as a new paper in arXiv after finalizing