Photoconductive Effects in Single Crystals of BaZrS$_3$
Authors:
Boyang Zhao,
Huandong Chen,
Ragib Ahsan,
Fei Hou,
Eric R Hoglund,
Shantanu Singh,
Huan Zhao,
Han Htoon,
Andrey Krayev,
Maruda Shanmugasundaram,
Patrick E Hopkins,
Jan Seidel,
Rehan Kapadia,
Jayakanth Ravichandran
Abstract:
Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZr…
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Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$.
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Submitted 4 October, 2023;
originally announced October 2023.
