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Over-the-Air Emulation of Electronically Adjustable Rician MIMO Channels in a Programmable-Metasurface-Stirred Reverberation Chamber
Authors:
Ismail Ahmed,
Matthieu Davy,
Hugo Prod'homme,
Philippe Besnier,
Philipp del Hougne
Abstract:
We experimentally investigate the feasibility of evaluating multiple-input multiple-output (MIMO) radio equipment under adjustable Rician fading channel conditions in a programmable-metasurface-stirred (PM-stirred) reverberation chamber (RC). Whereas within the "smart radio environment" paradigm PMs offer partial control over the channels to the wireless system, in our use case the PM emulates the…
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We experimentally investigate the feasibility of evaluating multiple-input multiple-output (MIMO) radio equipment under adjustable Rician fading channel conditions in a programmable-metasurface-stirred (PM-stirred) reverberation chamber (RC). Whereas within the "smart radio environment" paradigm PMs offer partial control over the channels to the wireless system, in our use case the PM emulates the uncontrollable fading. We implement a desired Rician K-factor by swee** a suitably sized subset of all meta-atoms through random configurations. We discover in our setup an upper bound on the accessible K-factors for which the statistics of the channel coefficient distributions closely follow the sought-after Rician distribution. We also discover a lower bound on the accessible K-factors in our setup: there are unstirred paths that never encounter the PM, and paths that encounter the PM are not fully stirred because the average of the meta-atoms' accessible polarizability values is not zero (i.e., the meta-atoms have a non-zero "structural" cross-section). We corroborate these findings with experiments in an anechoic chamber, physics-compliant PhysFad simulations with Lorentzian vs "ideal" meta-atoms, and theoretical analysis. Our work clarifies the scope of applicability of PM-stirred RCs for MIMO Rician channel emulation, as well as electromagnetic compatibility test.
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Submitted 30 November, 2023;
originally announced December 2023.
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Phase-field Simulations of Polarization Variations in Polycrystalline Hf0.5Zr0.5O2 based MFIM: Voltage-Dependence and Dynamics
Authors:
Revanth Koduru,
Imtiaz Ahmed,
Atanu K Saha,
Xiao Lyu,
Peide Ye,
Sumeet K. Gupta
Abstract:
In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We consider the effects of polycrystallinity in conjunction with multi-domain effects in HZO to understand the dependencies of variations on static and dynamic voltage stimuli using our 3D dynamic multi-grain phase-field simulatio…
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In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We consider the effects of polycrystallinity in conjunction with multi-domain effects in HZO to understand the dependencies of variations on static and dynamic voltage stimuli using our 3D dynamic multi-grain phase-field simulation framework. We examine the trends in variations due to various design factors - set voltage, pulse amplitude and pulse width and correlate them to the dynamics of polarization switching and the underlying mechanisms. According to our analysis, variations exhibit a non-monotonic dependence on set voltage due to the interplay between voltage-dependent switching mechanisms and the polycrystalline structure. We further report that towards the higher end of the set voltages, collapsing of oppositely polarized domains can lead to increase in variations. We also show that ferroelectric thickness scaling lowers the device-to-device variations. In addition, considering the dynamics of polarization switching, we signify the key role of voltage and temporal dependence of domain nucleation in dictating the trends in variations. Finally, we show that to reach a target mean polarization, using a pulse with lower amplitude for longer duration results in lower variations compared to higher amplitude pulse for a shorter duration.
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Submitted 27 March, 2023;
originally announced March 2023.
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Anisotropic subwavelength grating perturbation enables zero crosstalk in a leaky mode
Authors:
Md Faiyaz Kabir,
Md Borhan Mia,
Ishtiaque Ahmed,
Nafiz Jaidye,
Syed Z. Ahmed,
Sangsik Kim
Abstract:
Electromagnetic coupling via either exponentially decaying evanescent field or radiative wave is a primary characteristic of light, allowing optical signal/power transfer but limiting integration density in a photonic circuit. A leaky mode combines both evanescent field and radiative wave, causing stronger crosstalk and thus not ideal for dense integration. Here we show that a leaky mode with anis…
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Electromagnetic coupling via either exponentially decaying evanescent field or radiative wave is a primary characteristic of light, allowing optical signal/power transfer but limiting integration density in a photonic circuit. A leaky mode combines both evanescent field and radiative wave, causing stronger crosstalk and thus not ideal for dense integration. Here we show that a leaky mode with anisotropic perturbation rather can achieve completely zero crosstalk realized by subwavelength grating (SWG) metamaterials. The oscillating fields in the SWGs enable coupling coefficients in each direction to counteract each other, resulting in completely zero crosstalk. We experimentally demonstrate such an extraordinarily low coupling between closely spaced identical leaky SWG waveguides, suppressing the crosstalk by $\approx$40 dB compared to conventional strip waveguides, corresponding to $\approx$100 times longer coupling length. This leaky-SWG suppresses the crosstalk of transverse-magnetic (TM) mode, which is challenging due to its low confinement, and marks a novel approach in electromagnetic coupling applicable to other spectral regimes and generic devices.
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Submitted 17 October, 2022;
originally announced October 2022.
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Total charge changing cross sections measurements for $^{12}$C ion interactions with Al using CR-39 nuclear track detector
Authors:
Iftekhar Ahmed
Abstract:
We are investigating the total charge changing cross-section of 12C by using the CR39 nuclear track detector. Target sandwiched with CR39 of 5 cm x 5 cm area was irradiated with $^{12}$C ion at 55 MeV/n and 135 MeV/n at the Wakasa wan Energy Research Center (WERC) and Heavy Ion Medical Accelerator in Chiba (HIMAC), Japan, respectively. Exposed CR39s were etched in $^7$N NaOH solution at 70…
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We are investigating the total charge changing cross-section of 12C by using the CR39 nuclear track detector. Target sandwiched with CR39 of 5 cm x 5 cm area was irradiated with $^{12}$C ion at 55 MeV/n and 135 MeV/n at the Wakasa wan Energy Research Center (WERC) and Heavy Ion Medical Accelerator in Chiba (HIMAC), Japan, respectively. Exposed CR39s were etched in $^7$N NaOH solution at 70$^\circ$C to visualize the tracks produced by the primary ion beam and its fragmentations. The etching time was chosen between 15 and 25 hours according to exposed densities of $^{12}$C ions. The SEIKO FSP 1000 imaging microscope was used to get the image of the front and back surface etch pit simultaneously. Then by counting the projectile track before and after the target, the total charge changing cross-section has been measured. Since there are no previous experimental data to compare, PHITS and Glauber model calculated theoretical values were compared with the previous and this experimental result. From that, the measured data were found in good agreement with the previous and calculated value except for two points at energy 95.7 and 98.6 MeV/n. These two points need more analysis which will be done in the next phase. Measured data in this study will be the first experimental TCC data for $^{12}$C+Al interactions in the energy 100 MeV/n. These measured data will be useful to verify the models, optimize shielding in space radiation circumstances, and also to improve treatment planning on therapy, as well.
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Submitted 28 September, 2022;
originally announced September 2022.
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Modeling of 3D Printable Electrical Machineries Ferromagnetic Parts
Authors:
Shinthia Binte Eskender,
Anupam Saha,
Shaikh Ishtiaque Ahmed
Abstract:
The electrical machinery core is formed with a ferromagnetic material that offers high magnetic properties. As ferromagnetic materials have high relative magnetic permeability, they are important in the formation of electromagnetic device cores. Conventional subtractive and powder metallurgy methods for fabrication electrical machineries offer significant core losses and reduce magnetic flux densi…
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The electrical machinery core is formed with a ferromagnetic material that offers high magnetic properties. As ferromagnetic materials have high relative magnetic permeability, they are important in the formation of electromagnetic device cores. Conventional subtractive and powder metallurgy methods for fabrication electrical machineries offer significant core losses and reduce magnetic flux density and magnetic permeability. With the advancement of technology, the limitation of the traditional process can be overcome by using the additive manufacturing process. Hence, this paper proposes a 3D printable model of two types of single-phase transformers, referred to as E-I shape and U-I shape transformers respectively. Possibilities of designing the electrical machinery part which has a ferromagnetic core are investigated. The efficiency of the transformers is evaluated in terms of magnetic flux density distribution and volumetric loss density based on the results of a large number of Finite element simulation methods under various operating situations on COMSOL. The performance of various ferromagnetic materials such as Soft Iron (Fe) and Ferrite (Fe2O3) on the transformer core is evaluated. This analysis reveals that if U-I shaped transformer can be made from 3D printing, it will be the best feasible structure for higher operating frequency.
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Submitted 20 September, 2022;
originally announced September 2022.
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Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform
Authors:
Imtiaz Ahmed,
Udit Rawat,
Jr-Tai Chen,
Dana Weinstein
Abstract:
This paper presents a comprehensive study of the performance of Sezawa surface acoustic wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiC platform, reaching frequencies above 14 GHz for the first time. Sezawa mode frequency scaling is achieved due to the elimination of the thick buffer layer typically present in epitaxial GaN technology. Finite element analysis (FEA) is first performed to fi…
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This paper presents a comprehensive study of the performance of Sezawa surface acoustic wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiC platform, reaching frequencies above 14 GHz for the first time. Sezawa mode frequency scaling is achieved due to the elimination of the thick buffer layer typically present in epitaxial GaN technology. Finite element analysis (FEA) is first performed to find the range of frequencies over which the Sezawa mode is supported in the grown structure. Transmission lines and resonance cavities driven with Interdigital Transducers (IDTs) are designed, fabricated, and characterized. Modified Mason circuit models are developed for each class of devices to extract critical performance metrics. We observe a strong correlation between measured and simulated dispersion of the phase velocity (vp) and piezoelectric coupling coefficient (k^2). Maximum k^2 of 0.61% and frequency-quality factor product (f.Qm) of 6x10^12 1/s are achieved for Sezawa resonators at 11 GHz, with a minimum propagation loss of 0.26 dB/wavelength for the two-port devices. Sezawa modes are observed at frequencies spanning up to 14.3 GHz, achieving a record high in GaN microelectromechanical systems (MEMS) to the best of the authors' knowledge.
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Submitted 20 November, 2022; v1 submitted 26 April, 2022;
originally announced April 2022.
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Quality Inspection Aspects of Hybrid Prototypes for the CMS Outer Tracker Upgrade at HL-LHC
Authors:
A. La Rosa,
I. Ahmed,
J. Almeida,
G. Blanchot,
S. Cooperstein,
I. Dominguez,
A. Honma,
M. Kovacs,
A. Zografos
Abstract:
At the High Luminosity LHC (HL-LHC), the CMS experiment will need to operate at up to 200 interactions per 25 ns beam crossing time and with up to 4000 fb-1 of integrated luminosity. To achieve the physics goals the experiment needs to improve the tracking resolution and the ability to selectively trigger on specific physics events. The CMS tracker upgrade requires designing a new detector to cope…
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At the High Luminosity LHC (HL-LHC), the CMS experiment will need to operate at up to 200 interactions per 25 ns beam crossing time and with up to 4000 fb-1 of integrated luminosity. To achieve the physics goals the experiment needs to improve the tracking resolution and the ability to selectively trigger on specific physics events. The CMS tracker upgrade requires designing a new detector to cope with the HL-LHC conditions. The new Outer Tracker is based on two types of silicon modules (strip-strip and pixel-strip). Each module type has a few types of high-density interconnect hybrid circuits which house the front-end and auxiliary electronics. This paper introduces the technological choices for modules and hybrids and presents the quality inspection aspects of the first hybrid prototypes.
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Submitted 28 December, 2021;
originally announced December 2021.
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A comprehensive first principles calculations on (Ba0.82K0.18)(Bi0.53Pb0.47)O3 single-cubic-perovskite superconductor
Authors:
Mirza H. K. Rubel,
Sujon Kumar Mitro,
Khandaker Monower Hossain,
Md. Mijanur Rahaman,
M. Khalid Hossain,
Jaker Hossain,
B. K. Mondal,
Istiak Ahmed,
A. K. M. A. Islam,
A. El-Denglawey
Abstract:
In this present study, the pseudopotential plane-wave (PP-PW) pathway in the scheme of density functional theory (DFT) is utilized to investigate the various physical properties on (Ba0.82K0.18)(Bi0.53Pb0.47)O3 (BKBPO) single perovskite superconductor. We have analyzed elastic constants and moduli at zero and elevated pressures (up to 25 GPa) as well. We also have investigated the anisotropic natu…
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In this present study, the pseudopotential plane-wave (PP-PW) pathway in the scheme of density functional theory (DFT) is utilized to investigate the various physical properties on (Ba0.82K0.18)(Bi0.53Pb0.47)O3 (BKBPO) single perovskite superconductor. We have analyzed elastic constants and moduli at zero and elevated pressures (up to 25 GPa) as well. We also have investigated the anisotropic nature incorporating both the theoretical indices and graphical representations in 2D and 3D dimensions, which reveals a high level of anisotropy. The flatness of the energy bands near EF is a sign of Van-Hf singularity that might increase the electron pairing and origination of high-TC superconductivity. The computed band structure exhibits its metallic characteristics is confirmed by band overlap**. A band of DOS is formed for the strong hybridization of the constituent elements. The orbital electrons of O-2p contribute most dominantly at EF in contrast to all orbital electrons. The orbital electrons at the EF are higher from both the partial density of states and charge density map** investigation. The coexistence of the electron and hole-like Fermi sheets exhibits the multi-band nature of BKBPO. On the other hand, Fermi surfaces with flat faces promote transport features and Fermi surface nesting as well. The calculated value of the electron-phonon coupling constant (λ = 1.46) is slightly lower than the isostructural superconductor, which indicates that the studied BKBPO can be treated as a strongly coupled superconductor similar to the reported isostructural perovskite superconductors. Furthermore, the thermodynamic properties have been evaluated and analyzed at elevated temperature and pressure by using harmonic Debye approximation (QHDA).
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Submitted 7 December, 2021;
originally announced December 2021.
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Ethical Analysis on the Application of Neurotechnology for Human Augmentation in Physicians and Surgeons
Authors:
Soaad Hossain,
Syed Ishtiaque Ahmed
Abstract:
With the shortage of physicians and surgeons and increase in demand worldwide due to situations such as the COVID-19 pandemic, there is a growing interest in finding solutions to help address the problem. A solution to this problem would be to use neurotechnology to provide them augmented cognition, senses and action for optimal diagnosis and treatment. Consequently, doing so can negatively impact…
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With the shortage of physicians and surgeons and increase in demand worldwide due to situations such as the COVID-19 pandemic, there is a growing interest in finding solutions to help address the problem. A solution to this problem would be to use neurotechnology to provide them augmented cognition, senses and action for optimal diagnosis and treatment. Consequently, doing so can negatively impact them and others. We argue that applying neurotechnology for human enhancement in physicians and surgeons can cause injustices, and harm to them and patients. In this paper, we will first describe the augmentations and neurotechnologies that can be used to achieve the relevant augmentations for physicians and surgeons. We will then review selected ethical concerns discussed within literature, discuss the neuroengineering behind using neurotechnology for augmentation purposes, then conclude with an analysis on outcomes and ethical issues of implementing human augmentation via neurotechnology in medical and surgical practice.
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Submitted 3 July, 2020; v1 submitted 23 June, 2020;
originally announced June 2020.
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Assessing Pedestrian and Bicycle Treatments at Complex Continuous Flow Intersections
Authors:
Ishtiak Ahmed,
Shannon Warchol,
Chris Cunningham,
Nagui Rouphail
Abstract:
This study evaluated the performance of pedestrian-bicycle crossing alternatives at Continuous Flow Intersections (CFI). Further, a comparison was also performed of CFI crossing types against a standard intersection designed to provide an equivalent volume-to-capacity ratio. Three CFI crossing alternatives were tested, namely Traditional, Offset, and Midblock crossings. In total, 12 alternative sc…
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This study evaluated the performance of pedestrian-bicycle crossing alternatives at Continuous Flow Intersections (CFI). Further, a comparison was also performed of CFI crossing types against a standard intersection designed to provide an equivalent volume-to-capacity ratio. Three CFI crossing alternatives were tested, namely Traditional, Offset, and Midblock crossings. In total, 12 alternative scenarios were generated by incorporating two bicycle path types and two right-turn control types. These scenarios were analyzed through microsimulation on the basis of stopped delay and number of stops.
Simulation results revealed that the Offset crossing alternative incurred the least stopped delay for all user classes, including motorized traffic. The Traditional crossing generated the least number of stops for most route types. The Midblock crossing can be considered as a supplement to either the Offset or Traditional crossing depending on the specific origin-destination patterns at the intersection. The exclusive bicycle path performed better than the shared-use path in most cases. When compared with an equivalent standard intersection, aggregated results showed significant improvement for all CFI crossing types with respect to stopped delay, but the standard intersection had an equal or fewer number of stops for most routes investigated. Regarding the effect on vehicular movement, the lowest volume-to-capacity ratio of the main intersection was incurred by the Offset crossing. Future research includes incorporating pedestrian-bicycle safety, comfort, and the relative effects of these crossing alternatives on additional vehicular performance measures.
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Submitted 20 April, 2020;
originally announced April 2020.
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Investigating the Relationship between Freeway Rear-end Crash Rates and Macroscopically Modelled Reaction Time
Authors:
Ishtiak Ahmed,
Billy Williams,
M. Shoaib Samandar,
Gyounghoon Chun
Abstract:
This study explores the hypothesis that an analytically derived estimate of the required driver reaction time for asymptotic stability, based on the macroscopic Gazis, Herman, and Rothery (GHR) model, can serve as an effective indicator of the impact of traffic oscillations on rear-end crashes. If separate GHR models are fit discontinuously for the uncongested and congested regimes, the local drop…
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This study explores the hypothesis that an analytically derived estimate of the required driver reaction time for asymptotic stability, based on the macroscopic Gazis, Herman, and Rothery (GHR) model, can serve as an effective indicator of the impact of traffic oscillations on rear-end crashes. If separate GHR models are fit discontinuously for the uncongested and congested regimes, the local drop in required reaction time between the two regimes can also be estimated. This study evaluates the relationship between freeway rear-end crash rates and this drop in driver reaction time.
Traffic data from 28 sensors collected over one year were used to calibrate the two-regime GHR model. Rear-end crash rates for the segments surrounding the sensor locations are estimated using archived crash data over four years. The rear-end crash rates exhibited a strong positive correlation with the reaction time drop at the density-breakpoint of the congested regime. A linear form model provided the best fit in terms of R-square, standard error, and homoscedasticity. These results motivate follow-on research to incorporate macroscopically derived reaction time in road-safety planning. More generally, the study demonstrates a useful application of a discontinuous macroscopic traffic model.
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Submitted 23 April, 2020;
originally announced April 2020.
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Exceptional coupling in extreme skin-depth waveguides for extremely low waveguide crosstalk
Authors:
Md Borhan Mia,
Syed Z. Ahmed,
Ishtiaque Ahmed,
Yun Jo Lee,
Minghao Qi,
Sangsik Kim
Abstract:
Photonic chips can miniaturize complicate optical systems very tiny and portable, providing versatile functionalities for many optical applications. Increasing the photonic chip integration density is highly desired as it provides more functionalities, low cost, and lower power consumption. However, photonic chip integration density is limited by the waveguide crosstalk, which is caused by the eva…
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Photonic chips can miniaturize complicate optical systems very tiny and portable, providing versatile functionalities for many optical applications. Increasing the photonic chip integration density is highly desired as it provides more functionalities, low cost, and lower power consumption. However, photonic chip integration density is limited by the waveguide crosstalk, which is caused by the evanescent waves in the cladding. Here we show that the waveguide crosstalk can be suppressed completely with the exceptional coupling in extreme skin-depth (eskid) waveguides. The anisotropic dielectric perturbations in the coupled eskid waveguides cause such an exceptional coupling, resulting in infinitely long coupling length. We demonstrate the extreme suppression of waveguide crosstalk via exceptional coupling on a silicon-on-insulator (SOI) platform, which is compatible with a complementary metal-oxide-semiconductor (CMOS) process. The idea of exceptional coupling in eskid waveguides can be applied to many other photonic devices as well, significantly reducing entire chip footprints.
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Submitted 24 February, 2020;
originally announced February 2020.
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A Physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor
Authors:
Ehsanur Rahman,
Abir Shadman,
Imtiaz Ahmed,
Saeed Uz Zaman Khan,
Quazi D. M. Khosru
Abstract:
In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic potential in the channel. Current is then calculated by solving the drift-diffusion equation. The model makes gradual channel approximation to simplify the solutio…
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In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic potential in the channel. Current is then calculated by solving the drift-diffusion equation. The model makes gradual channel approximation to simplify the solution procedure. The appropriate density of states obtained from the first principle density functional theory simulation has been considered to keep the model physically accurate for monolayer TMDC channel FET. The outcome of the model has been benchmarked against both experimental and numerical quantum simulation results with the help of a few fitting parameters. Using the compact model, detailed output and transfer characteristics of monolayer $WSe_2$ FET have been studied, and various performance parameters have been determined. The study confirms excellent ON and OFF state performances of monolayer $WSe_2$ FET which could be viable for the next generation high-speed, low power applications. Also, the proposed model has been extended to study the operation of a biosensor. A monolayer $MoS_2$ channel based dielectric modulated FET is investigated using the compact model for detection of a biomolecule in a dry environment.
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Submitted 26 April, 2018;
originally announced April 2018.
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Radio-frequency capacitive gate-based sensing
Authors:
Imtiaz Ahmed,
James A. Haigh,
Simon Schaal,
Sylvain Barraud,
Yi Zhu,
Chang-min Lee,
Mario Amado,
Jason W. A. Robinson,
Alessandro Rossi,
John J. L. Morton,
M. Fernando Gonzalez-Zalba
Abstract:
Develo** fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting…
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Develo** fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $μ$e$/\sqrt{\text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $μ$e$/\sqrt{\text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout.
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Submitted 29 January, 2018;
originally announced January 2018.
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Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector
Authors:
M. Dragicevic,
M. Friedl,
J. Hrubec,
H. Steininger,
A. Gädda,
J. Härkönen,
T. Lampén,
P. Luukka,
T. Peltola,
E. Tuominen,
E. Tuovinen,
A. Winkler,
P. Eerola,
T. Tuuva,
G. Baulieu,
G. Boudoul,
L. Caponetto,
C. Combaret,
D. Contardo,
T. Dupasquier,
G. Gallbit,
N. Lumb,
L. Mirabito,
S. Perries,
M. Vander Donckt
, et al. (462 additional authors not shown)
Abstract:
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator…
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A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
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Submitted 1 June, 2017;
originally announced June 2017.
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Design and Implementation of Performance Metrics for Evaluation of Assessments Data
Authors:
Irfan Ahmed,
Arif Bhatti
Abstract:
The objective of this paper is to design performance metrics and respective formulas to quantitatively evaluate the achievement of set objectives and expected outcomes both at the course and program levels. Evaluation is defined as one or more processes for interpreting the data acquired through the assessment processes in order to determine how well the set objectives and outcomes are being attai…
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The objective of this paper is to design performance metrics and respective formulas to quantitatively evaluate the achievement of set objectives and expected outcomes both at the course and program levels. Evaluation is defined as one or more processes for interpreting the data acquired through the assessment processes in order to determine how well the set objectives and outcomes are being attained. Even though assessment processes for accreditation are well documented but existence of an evaluation process is assumed. This paper focuses on evaluation process to provide insights and techniques for data interpretation. It gives a complete evaluation process from the data collection through various assessment methods, performance metrics, to the presentations in the form of tables and graphs. Authors hope that the articulated description of evaluation formulas will help convergence to high quality standard in evaluation process.
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Submitted 22 August, 2015;
originally announced September 2015.
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Trap** in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trap** rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trap** rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trap** rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
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A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect
Authors:
Nadim Chowdhury,
Imtiaz Ahmed,
Zubair Al Azim,
Md. Hasibul Alam,
Iftikhar Ahmad Niaz,
Quazi D. M. Khosru
Abstract:
We propose a physically based analytical compact model to calculate Eigen energies and Wave functions which incorporates penetration effect. The model is applicable for a quantum well structure that frequently appears in modern nano-scale devices. This model is equally applicable for both silicon and III-V devices. Unlike other models already available in the literature, our model can accurately p…
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We propose a physically based analytical compact model to calculate Eigen energies and Wave functions which incorporates penetration effect. The model is applicable for a quantum well structure that frequently appears in modern nano-scale devices. This model is equally applicable for both silicon and III-V devices. Unlike other models already available in the literature, our model can accurately predict all the eigen energies without the inclusion of any fitting parameters. The validity of our model has been checked with numerical simulations and the results show significantly better agreement compared to the available methods.
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Submitted 14 April, 2014;
originally announced May 2014.
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Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects
Authors:
Zubair Al Azim,
Nadim Chowdhury,
Iftikhar Ahmad Niaz,
Md. Hasibul Alam,
Imtiaz Ahmed,
Quazi D. M. Khosru
Abstract:
Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson solver taking into account the quantum mechanical effects. Although, ATLAS simulations to determine current and other short channel effects in this device have…
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Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson solver taking into account the quantum mechanical effects. Although, ATLAS simulations to determine current and other short channel effects in this device have been demonstrated in recent literature, C-V & Ballistic I-V characterizations by using self-consistent method are yet to be reported. C-V characteristic of this device is investigated here with the variation of bottom gate voltage. The depletion to accumulation transition point (i.e. Threshold voltage) of the C-V curve should shift in the positive direction when the bottom gate is negatively biased and our simulation results validate this phenomenon. Ballistic performance of this device has also been studied with the variation of top gate voltage.
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Submitted 15 November, 2012;
originally announced November 2012.
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Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects
Authors:
Imtiaz Ahmed,
Iftikhar Ahmad Niaz,
Md. Hasibul Alam,
Nadim Chowdhury,
Zubair Al Azim,
Quazi Deen Mohd Khosru
Abstract:
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of C-V for enhancement type device is available in recent literature, a complete characterization of electrostatic property of depletion type Buried Channel Quantum…
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We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of C-V for enhancement type device is available in recent literature, a complete characterization of electrostatic property of depletion type Buried Channel Quantum Well FET (QWFET) structure is yet to be done. C-V characteristics of the device is studied with the variation of three important process parameters: Indium (In) composition, gate dielectric and oxide thickness. We observed that inversion capacitance and ballistic current tend to increase with the increase in Indium (In) content in InGaAs barrier layer.
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Submitted 15 November, 2012;
originally announced November 2012.