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Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trap** surface structures
Authors:
Wayesh Qarony,
Ahmed S. Mayet,
Ekaterina Ponizovskaya Devine,
Soroush Ghandiparsi,
Cesar Bartolo-Perez,
Ahasan Ahamed,
Amita Rawat,
Hasina H. Mamtaz,
Toshishige Yamada,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing photon-trap** surface structures to show a prodigious improvement of photoabsorption in one-micrometer-thin silicon, surpassing the inherent absorption efficiency of galli…
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The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing photon-trap** surface structures to show a prodigious improvement of photoabsorption in one-micrometer-thin silicon, surpassing the inherent absorption efficiency of gallium arsenide for a broad spectrum. The photon-trap** structures allow the bending of normally incident light by almost ninety degrees to transform into laterally propagating modes along the silicon plane. Consequently, the propagation length of light increases, contributing to more than an order of magnitude improvement in absorption efficiency in photodetectors. This high absorption phenomenon is explained by FDTD analysis, where we show an enhanced photon density of states while substantially reducing the optical group velocity of light compared to silicon without photon-trap** structures, leading to significantly enhanced light-matter interactions. Our simulations also predict an enhanced absorption efficiency of photodetectors designed using 30 and 100-nanometer silicon thin films that are compatible with CMOS electronics. Despite a very thin absorption layer, such photon-trap** structures can enable high-efficiency and high-speed photodetectors needed in ultra-fast computer networks, data communication, and imaging systems with the potential to revolutionize on-chip logic and optoelectronic integration.
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Submitted 8 June, 2023;
originally announced June 2023.
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Single Micro-hole per Pixel for Thin Ge-on-Si Image Sensor with Enhanced Sensitivity upto 1700 nm
Authors:
Ekaterina Ponizovskaya-Devine,
Ahmed S. Mayet,
Amita Rawat,
Ahasan Ahamed,
Shih-Yuan Wang,
Aly F. Elrefaie,
Toshishige Yamada,
M. Saif Islam
Abstract:
We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical efficiency and extend the range to the 1.7 microns wavelength. We demonstrate an optimization for the width and depth of the nano-holes for maximal absorption in t…
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We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical efficiency and extend the range to the 1.7 microns wavelength. We demonstrate an optimization for the width and depth of the nano-holes for maximal absorption in the near infrared. We show a reduction in cross-talk by employing thin Si oxide deep trench isolation in between the pixels. Finally, we show a 26-50 percent reduction in the device capacitance with the introduction of a hole. Such CMOS-compatible Ge-on_Si sensor will enable high-density, ultra-fast and efficient near-infrared imaging.
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Submitted 11 September, 2022;
originally announced September 2022.
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Optimizing the light penetration depth in APDs and SPADs for high gain-bandwidth and ultra-wide spectral response
Authors:
Ahasan Ahamed,
Cesar Bartolo-Perez,
Ahmed Sulaiman Mayet,
Soroush Ghandiparsi,
Gerard Arino-Estrada,
Xiangnan Zhou,
Julien Bec,
Shih-Yuan Wang,
Laura Marcu,
M. Saif Islam
Abstract:
Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering light near the multiplication region where the electric field is the strongest. Such control in the penetration depth for a particular wavelength of light has been previously demonstrated using integrated photon-trappin…
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Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering light near the multiplication region where the electric field is the strongest. Such control in the penetration depth for a particular wavelength of light has been previously demonstrated using integrated photon-trap** nanostructures. In this paper, we show that an optimized periodic nanostructure design can control the penetration depth for a wide range of visible and near-infrared wavelengths simultaneously. A conventional silicon APD structure suffers from high photocarrier loss due to recombination for shorter wavelengths as they are absorbed near the surface region, while silicon has low absorption efficiency for longer wavelengths. This optimized nanostructure design allows shorter wavelengths of light to penetrate deeper into the device, circumventing recombination sites while trap** the longer wavelengths in the thin silicon device by bending the vertically propagating light into horizontal modes. This manipulation of penetration depth improves the absorption in the device, increasing light sensitivity while nanostructures reduce the reflectance from the top surface. While delivery of light near the multiplication region reduces the photogenerated carrier loss and shortens transit time, leading to high multiplication gain in APDs and SPADs over a wide spectral range. These high gain APDs and SPADs will find their potential applications in Time-Of-Flight Positron Emission Tomography (TOF-PET), Fluorescence Lifetime Imaging Microscopy (FLIM), and pulse oximetry where high detection efficiency and high gain-bandwidth is required over a multitude of wavelengths.
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Submitted 19 January, 2022;
originally announced January 2022.
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Reconstruction-based spectroscopy using CMOS image sensors with random photon-trap** nanostructure per sensor
Authors:
Ahasan Ahamed,
Cesar Bartolo-Perez,
Ahmed Sulaiman Mayet,
Soroush Ghandiparsi,
Lisa McPhillips,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
Optical spectrometers are widely used scientific equipment with many applications involving material characterization, chemical analysis, disease diagnostics, surveillance, etc. Emerging applications in biomedical and communication fields have boosted the research in the miniaturization of spectrometers. Recently, reconstruction-based spectrometers have gained popularity for their compact size, ea…
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Optical spectrometers are widely used scientific equipment with many applications involving material characterization, chemical analysis, disease diagnostics, surveillance, etc. Emerging applications in biomedical and communication fields have boosted the research in the miniaturization of spectrometers. Recently, reconstruction-based spectrometers have gained popularity for their compact size, easy maneuverability, and versatile utilities. These devices exploit the superior computational capabilities of recent computers to reconstruct hyperspectral images using detectors with distinct responsivity to different wavelengths. In this paper, we propose a CMOS compatible reconstruction-based on-chip spectrometer pixels capable of spectrally resolving the visible spectrum with 1 nm spectral resolution maintaining high accuracy (>95 %) and low footprint (8 um x 8 um), all without the use of any additional filters. A single spectrometer pixel is formed by an array of silicon photodiodes, each having a distinct absorption spectrum due to their integrated nanostructures, this allows us to computationally reconstruct the hyperspectral image. To achieve distinct responsivity, we utilize random photon-trap** nanostructures per photodiode with different dimensions and shapes that modify the coupling of light at different wavelengths. This also reduces the spectrometer pixel footprint (comparable to conventional camera pixels), thus improving spatial resolution. Moreover, deep trench isolation (DTI) reduces the crosstalk between adjacent photodiodes. This miniaturized spectrometer can be utilized for real-time in-situ biomedical applications such as Fluorescence Lifetime Imaging Microscopy (FLIM), pulse oximetry, disease diagnostics, and surgical guidance.
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Submitted 16 January, 2022;
originally announced January 2022.
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Optimization of CMOS image sensors with single photon-trap** hole per pixel for enhanced sensitivity in near-infrared
Authors:
E. Ponizovskaya Devine,
Ahasan Ahamed,
Ahmed S. Mayet,
Soroush Ghandiparsi,
Cesar Bartolo-Perez,
Lisa McPhillips,
Aly F. Elrefaie,
Toshishige Yamada,
Shih-Yuan Wang,
M Saif Islam
Abstract:
The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in near-infrared wavelengths. A hole with optimal dimensions enhanced optical absorption by 60% for a 3 $μ$m thick Si photodiode, which is 4 orders better than that for…
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The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in near-infrared wavelengths. A hole with optimal dimensions enhanced optical absorption by 60% for a 3 $μ$m thick Si photodiode, which is 4 orders better than that for comparable flat photodiodes. We have shown that there is an optimal size and depth of the hole that exhibits maximal absorption in blue, green, red, and infrared. Crosstalk was successfully reduced by employing thin trenches between pixels of 1.12 $μ{m^2}$ in size.
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Submitted 1 October, 2021;
originally announced October 2021.
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Avalanche Photodetectors with Photon Trap** Structures for Biomedical Imaging Applications
Authors:
Cesar Bartolo-Perez,
Soroush Ghandiparsi,
Ahmed S. Mayet,
Hilal Cansizoglu,
Yang Gao,
Wayesh Qarony,
Ahasan Ahamed,
Shih-Yuan Wang,
Simon R. Cherry,
M. Saif Islam,
Gerard Arino-Estrada
Abstract:
Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we evaluate the gain, detection efficiency, and timing performance of avalanche photodiodes (APD) with photon trap** nanostructures for photons with 45…
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Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we evaluate the gain, detection efficiency, and timing performance of avalanche photodiodes (APD) with photon trap** nanostructures for photons with 450 and 850 nm wavelengths. At 850 nm wavelength, our photon trap** avalanche photodiodes showed 30 times higher gain, an increase from 16% to >60% enhanced absorption efficiency, and a 50% reduction in the full width at half maximum (FWHM) pulse response time close to the breakdown voltage. At 450 nm wavelength, the external quantum efficiency increased from 54% to 82%, while the gain was enhanced more than 20-fold. Therefore, silicon APDs with photon trap** structures exhibited a dramatic increase in absorption compared to control devices. Results suggest very thin devices with fast timing properties and high absorption between the near-ultraviolet and the near infrared region can be manufactured for high-speed applications in biomedical imaging. This study paves the way towards obtaining single photon detectors with photon trap** structures with gains above 10^6 for the entire visible range
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Submitted 27 April, 2021;
originally announced April 2021.
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Maximizing absorption in photon trap** ultra-fast silicon photodetectors
Authors:
Cesar Bartolo-Perez,
Wayesh Qarony,
Soroush Ghandiparsi,
Ahmed S. Mayet,
Ahasan Ahamed,
Hilal Cansizoglu,
Yang Gao,
Ekaterina Ponizovskaya Devine,
Toshishige Yamada,
Aly F Elrefaie,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical imaging. However, such photodetectors present a bandwidth-absorption trade-off at those wavelengths that have limited their implementation. Photon trap** structu…
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Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical imaging. However, such photodetectors present a bandwidth-absorption trade-off at those wavelengths that have limited their implementation. Photon trap** structures address this trade-off by enhancing the light-matter interactions, but maximizing their performance remains a challenge due to a multitude of factors influencing their design and fabrication. In this paper, strategies to improve the photon trap** effect while enhancing the speed of operation are investigated. By optimizing the design of photon trap** structures and experimentally integrated them in high-speed photodetectors, a simultaneous broadband absorption efficiency enhancement up to 1000% and a capacitance reduction of more than 50% has been achieved. Such work also allows to present empirical equations to correlate the quantum efficiency of photodetectors with the physical properties of the photon-trap** structures, material characteristics, and limitations of the fabrication technologies. The results obtained, open routes towards designing cost-effective CMOS integrated.
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Submitted 22 December, 2020;
originally announced December 2020.
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Single Microhole per Pixel in CMOS Image Sensor with Enhanced Optical Sensitivity in Near-Infrared
Authors:
E. Ponizovskaya Devine,
Wayesh Qarony,
Ahasan Ahamed,
Ahmed S Mayet,
Soroush Ghandiparsi,
Cesar Bartolo-Perez,
Aly F Elrefaie,
Toshishige Yamada,
Shih-Yuan Wang,
M. Saif Islam
Abstract:
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths, the enhancement allows 70% absorption in a 3 microns thick Si. It is 4x better than for the flat pixel. We compared different shapes and sizes of single holes an…
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Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths, the enhancement allows 70% absorption in a 3 microns thick Si. It is 4x better than for the flat pixel. We compared different shapes and sizes of single holes and holes arrays. We have shown that a certain size and shape in single holes pronounce better optical efficiency enhancement. The crosstalk was successfully reduced with trenches between pixels. We optimized the trenches to achieve minimal pixel separation for 1.12 microns pixel.
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Submitted 20 November, 2020;
originally announced November 2020.
