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Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
Authors:
M. Hollenbach,
N. Klingner,
P. Mazarov,
W. Pilz,
A. Nadzeyka,
F. Mayer,
N. V. Abrosimov,
L. Bischoff,
G. Hlawacek,
M. Helm,
G. V. Astakhov
Abstract:
Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creat…
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Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, we apply a multi-step implantation protocol for the programmable activation of the G centers with sub-100- nm resolution. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon-free silicon wafers. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity.
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Submitted 30 April, 2024;
originally announced April 2024.
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Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
Authors:
Kamyar Saeedi,
Stephanie Simmons,
Jeff Z. Salvail,
Phillip Dluhy,
Helge Riemann,
Nikolai V. Abrosimov,
Peter Becker,
Hans-Joachim Pohl,
John J. L. Morton,
Mike L. W. Thewalt
Abstract:
Quantum memories capable of storing and retrieving coherent information for extended times at room temperature would enable a host of new technologies. Electron and nuclear spin qubits using shallow neutral donors in semiconductors have been studied extensively but are limited to low temperatures ($\le$10 K); however, the nuclear spins of ionized donors have potential for high temperature operatio…
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Quantum memories capable of storing and retrieving coherent information for extended times at room temperature would enable a host of new technologies. Electron and nuclear spin qubits using shallow neutral donors in semiconductors have been studied extensively but are limited to low temperatures ($\le$10 K); however, the nuclear spins of ionized donors have potential for high temperature operation. We use optical methods and dynamical decoupling to realize this potential for an ensemble of 31P donors in isotopically purified 28Si and observe a room temperature coherence time of over 39 minutes. We further show that a coherent spin superposition can be cycled from 4.2 K to room temperature and back, and report a cryogenic coherence time of 3 hours in the same system.
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Submitted 30 March, 2023;
originally announced March 2023.
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Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization
Authors:
Fanqi Meng,
Frederik Walla,
Sergey Kovalev,
Jan-Christoph Deinert,
Igor Ilyakov,
Min Chen,
Alexey Ponomaryov,
Sergey G. Pavlov,
Heinz-Wilhelm Hubers,
Nikolay V. Abrosimov,
Christoph Jungemann,
Hartmut G. Roskos,
Mark D. Thomson
Abstract:
We investigate ultrafast harmonic generation (HG) in Si:B, driven by intense pump pulses with fields reaching ~100 kV/cm and a carrier frequency of 300 GHz, at 4 K and 300 K, both experimentally and theoretically. We report several novel findings concerning the nonlinear charge carrier dynamics in intense sub-THz fields. (i) Harmonics of order up to n=9 are observed at room temperature, while at l…
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We investigate ultrafast harmonic generation (HG) in Si:B, driven by intense pump pulses with fields reaching ~100 kV/cm and a carrier frequency of 300 GHz, at 4 K and 300 K, both experimentally and theoretically. We report several novel findings concerning the nonlinear charge carrier dynamics in intense sub-THz fields. (i) Harmonics of order up to n=9 are observed at room temperature, while at low temperature we can resolve harmonics reaching even n=13. The susceptibility per charge carrier at moderate field strength is as high as for charge carriers in graphene, considered to be one of the materials with the strongest sub-THz nonlinear response. (ii) For T=300 K, where the charge carriers bound to acceptors are fully thermally ionized into the valence subbands, the susceptibility values decrease with increasing field strength. Simulations incorporating multi-valence-band Monte-Carlo and finite-difference-time-domain (FDTD) propagation show that here, the HG process becomes increasingly dominated by energy-dependent scattering rates over the contribution from band non-parabolicity, due to the onset of optical-phonon emission, which ultimately leads to the saturation at high fields. (iii) At T=4 K, where the majority of charges are bound to acceptors, we observe a drastic rise of the HG yields for internal pump fields of 30 kV/cm, as one reaches the threshold for tunnel ionization. We disentangle the HG contributions in this case into contributions from the initial 'generational'- and subsequent band-nonlinearities, and show that scattering seriously degrades any coherent recollision during the subsequent oscillation of the holes.
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Submitted 2 March, 2023;
originally announced March 2023.
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A photonic platform hosting telecom photon emitters in silicon
Authors:
Michael Hollenbach,
Nagesh S. Jagtap,
Ciarán Fowley,
Juan Baratech,
Verónica Guardia-Arce,
Ulrich Kentsch,
Anna Eichler-Volf,
Nikolay V. Abrosimov,
Artur Erbe,
ChaeHo Shin,
Hakseong Kim,
Manfred Helm,
Woo Lee,
Georgy V. Astakhov,
Yonder Berencén
Abstract:
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a…
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Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.
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Submitted 5 December, 2021;
originally announced December 2021.
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Thermal activation of valley-orbit states of neutral magnesium in silicon
Authors:
Rohan Abraham,
Valentina Shuman,
Leonid Portsel,
Anatoly Lodygin,
Yuri Astrov,
Nikolay Abrosimov,
Sergey Pavlov,
Heinz-Wilhelm Hübers,
Stephanie Simmons,
Michael Thewalt
Abstract:
Interstitial magnesium acts as a moderately deep double donor in silicon, and is relatively easily introduced by diffusion. Unlike the case of the chalcogen double donors, the binding energies of the even-parity valley-orbit excited states 1sT$_2$ and 1sE have remained elusive. Here we report on temperature dependence absorption measurements focusing on the neutral charge species. Our results demo…
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Interstitial magnesium acts as a moderately deep double donor in silicon, and is relatively easily introduced by diffusion. Unlike the case of the chalcogen double donors, the binding energies of the even-parity valley-orbit excited states 1sT$_2$ and 1sE have remained elusive. Here we report on temperature dependence absorption measurements focusing on the neutral charge species. Our results demonstrate thermal activation from the ground state 1sA to the valley-orbit states, as observed by transitions from the thermally populated levels to the odd-parity states 2p$_0$ and 2p$_{\pm}$
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Submitted 21 October, 2020;
originally announced October 2020.
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A silicon-integrated telecom photon-spin interface
Authors:
L. Bergeron,
C. Chartrand,
A. T. K. Kurkjian,
K. J. Morse,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl,
M. L. W. Thewalt,
S. Simmons
Abstract:
Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon d…
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Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon defect with spin-selective optical transitions at 1326 nm in the telecommunications O-band. Here we show that the T center in $^{28}$Si offers electron and nuclear spin lifetimes beyond a millisecond and second respectively, as well as optical lifetimes of 0.94(1) $μ$s and a Debye-Waller factor of 0.23(1). This work represents a significant step towards coherent photonic interconnects between long-lived silicon spins, spin-entangled telecom single-photon emitters, and spin-dependent silicon-integrated photonic nonlinearities for future global quantum technologies.
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Submitted 15 June, 2020;
originally announced June 2020.
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Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si$_x$Ge$_{1-x}$ quantum dot
Authors:
Arne Hollmann,
Tom Struck,
Veit Langrock,
Andreas Schmidbauer,
Floyd Schauer,
Tim Leonhardt,
Kentarou Sawano,
Helge Riemann,
Nikolay V. Abrosimov,
Dominique Bougeard,
Lars R. Schreiber
Abstract:
Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown…
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Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown $^{28}$Si/SiGe. The valley splitting is monotonically and reproducibly tunable up to 15 % by gate voltages, originating from a 6 nm lateral displacement of the quantum dot. We observe static spin relaxation times $T_1>1$ s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, $T_1$ is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking.
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Submitted 30 March, 2020; v1 submitted 9 July, 2019;
originally announced July 2019.
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Characterization of the Si:Se+ spin-photon interface
Authors:
Adam DeAbreu,
Camille Bowness,
Rohan J. S. Abraham,
Alzbeta Medvedova,
Kevin J. Morse,
Helge Riemann,
Nikolay V. Abrosimov,
Peter Becker,
Hans-Joachim Pohl,
Michael L. W. Thewalt,
Stephanie Simmons
Abstract:
Silicon is the most developed electronic and photonic technological platform and hosts some of the highest-performance spin and photonic qubits developed to date. A hybrid quantum technology harnessing an efficient spin-photon interface in silicon would unlock considerable potential by enabling ultra-long-lived photonic memories, distributed quantum networks, microwave to optical photon converters…
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Silicon is the most developed electronic and photonic technological platform and hosts some of the highest-performance spin and photonic qubits developed to date. A hybrid quantum technology harnessing an efficient spin-photon interface in silicon would unlock considerable potential by enabling ultra-long-lived photonic memories, distributed quantum networks, microwave to optical photon converters, and spin-based quantum processors, all linked using integrated silicon photonics. However, the indirect bandgap of silicon makes identification of efficient spin-photon interfaces nontrivial. Here we build upon the recent identification of chalcogen donors as a promising spin-photon interface in silicon. We determined that the spin-dependent optical degree of freedom has a transition dipole moment stronger than previously thought (here 1.96(8) Debye), and the T1 spin lifetime in low magnetic fields is longer than previously thought (> 4.6(1.5) hours). We furthermore determined the optical excited state lifetime (7.7(4) ns), and therefore the natural radiative efficiency (0.80(9) %), and by measuring the phonon sideband, determined the zero-phonon emission fraction (16(1) %). Taken together, these parameters indicate that an integrated quantum optoelectronic platform based upon chalcogen donor qubits in silicon is well within reach of current capabilities.
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Submitted 26 September, 2018;
originally announced September 2018.
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Highly enriched $^{28}$Si reveals remarkable optical linewidths and fine structure for well-known damage centers
Authors:
C. Chartrand,
L. Bergeron,
K. J. Morse,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl,
S. Simmons,
M. L. W. Thewalt
Abstract:
Luminescence and optical absorption due to radiation damage centers in silicon has been studied exhaustively for decades, but is receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much sharper in enriched $^{28}$Si than in natural Si, due to the elimination of inhomogeneous isotopic br…
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Luminescence and optical absorption due to radiation damage centers in silicon has been studied exhaustively for decades, but is receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much sharper in enriched $^{28}$Si than in natural Si, due to the elimination of inhomogeneous isotopic broadening, this has not yet been investigated for radiation damage centers. We report results for the well-known G, W and C damage centers in highly enriched $^{28}$Si, with optical linewidth improvements in some cases of over two orders of magnitude, revealing previously hidden fine structure in the G center emission and absorption. These results have direct implications for the linewidths to be expected from single center emission, even in natural Si, and for models for the G center structure. The advantages of $^{28}$Si can be readily extended to the study of other radiation damage centers in Si.
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Submitted 27 July, 2018;
originally announced July 2018.
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The Large Enriched Germanium Experiment for Neutrinoless Double Beta Decay (LEGEND)
Authors:
LEGEND Collaboration,
N. Abgrall,
A. Abramov,
N. Abrosimov,
I. Abt,
M. Agostini,
M. Agartioglu,
A. Ajjaq,
S. I. Alvis,
F. T. Avignone III,
X. Bai,
M. Balata,
I. Barabanov,
A. S. Barabash,
P. J. Barton,
L. Baudis,
L. Bezrukov,
T. Bode,
A. Bolozdynya,
D. Borowicz,
A. Boston,
H. Boston,
S. T. P. Boyd,
R. Breier,
V. Brudanin
, et al. (208 additional authors not shown)
Abstract:
The observation of neutrinoless double-beta decay (0$νββ$) would show that lepton number is violated, reveal that neutrinos are Majorana particles, and provide information on neutrino mass. A discovery-capable experiment covering the inverted ordering region, with effective Majorana neutrino masses of 15 - 50 meV, will require a tonne-scale experiment with excellent energy resolution and extremely…
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The observation of neutrinoless double-beta decay (0$νββ$) would show that lepton number is violated, reveal that neutrinos are Majorana particles, and provide information on neutrino mass. A discovery-capable experiment covering the inverted ordering region, with effective Majorana neutrino masses of 15 - 50 meV, will require a tonne-scale experiment with excellent energy resolution and extremely low backgrounds, at the level of $\sim$0.1 count /(FWHM$\cdot$t$\cdot$yr) in the region of the signal. The current generation $^{76}$Ge experiments GERDA and the MAJORANA DEMONSTRATOR utilizing high purity Germanium detectors with an intrinsic energy resolution of 0.12%, have achieved the lowest backgrounds by over an order of magnitude in the 0$νββ$ signal region of all 0$νββ$ experiments. Building on this success, the LEGEND collaboration has been formed to pursue a tonne-scale $^{76}$Ge experiment. The collaboration aims to develop a phased 0$νββ$ experimental program with discovery potential at a half-life approaching or at $10^{28}$ years, using existing resources as appropriate to expedite physics results.
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Submitted 6 September, 2017;
originally announced September 2017.
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Electron nuclear double resonance with donor-bound excitons in silicon
Authors:
David P. Franke,
Michael Szech,
Florian M. Hrubesch,
Helge Riemann,
Nikolai V. Abrosimov,
Peter Becker,
Hans-Joachim Pohl,
Kohei M. Itoh,
Michael L. W. Thewalt,
Martin S. Brandt
Abstract:
We present Auger-electron-detected magnetic resonance (AEDMR) experiments on phosphorus donors in silicon, where the selective optical generation of donor-bound excitons is used for the electrical detection of the electron spin state. Because of the long dephasing times of the electron spins in isotopically purified $^{28}$Si, weak microwave fields are sufficient, which allow to realize broadband…
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We present Auger-electron-detected magnetic resonance (AEDMR) experiments on phosphorus donors in silicon, where the selective optical generation of donor-bound excitons is used for the electrical detection of the electron spin state. Because of the long dephasing times of the electron spins in isotopically purified $^{28}$Si, weak microwave fields are sufficient, which allow to realize broadband AEDMR in a commercial ESR resonator. Implementing Auger-electron-detected ENDOR, we further demonstrate the optically-assisted control of the nuclear spin under conditions where the hyperfine splitting is not resolved in the optical spectrum. Compared to previous studies, this significantly relaxes the requirements on the sample and the experimental setup, e.g. with respect to strain, isotopic purity and temperature. We show AEDMR of phosphorus donors in silicon with natural isotope composition, and discuss the feasibility of ENDOR measurements also in this system.
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Submitted 29 November, 2016; v1 submitted 9 August, 2016;
originally announced August 2016.
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Optically detected NMR of optically hyperpolarized 31P neutral donors in 28Si
Authors:
M. Steger,
T. Sekiguchi,
A. Yang,
K. Saeedi,
M. E. Hayden,
M. L. W. Thewalt,
K. M. Itoh,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl
Abstract:
The electron and nuclear spins of the shallow donor 31P are promising qubit candidates invoked in many proposed Si-based quantum computing schemes. We have recently shown that the near-elimination of inhomogeneous broadening in highly isotopically enriched 28Si enables an optical readout of both the donor electron and nuclear spins by resolving the donor hyperfine splitting in the near-gap donor b…
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The electron and nuclear spins of the shallow donor 31P are promising qubit candidates invoked in many proposed Si-based quantum computing schemes. We have recently shown that the near-elimination of inhomogeneous broadening in highly isotopically enriched 28Si enables an optical readout of both the donor electron and nuclear spins by resolving the donor hyperfine splitting in the near-gap donor bound exciton transitions. We have also shown that pum** these same transitions can very quickly produce large electron and nuclear hyperpolarizations at low magnetic fields, where the equilibrium electron and nuclear polarizations are very small. Here we show preliminary results of the measurement of 31P neutral donor NMR parameters using this optical nuclear hyperpolarization mechanism for preparation of the 31P nuclear spin system, followed by optical readout of the resulting nuclear spin population after manipulation with NMR pulse sequences. This allows for the observation of single-shot NMR signals with very high signal to noise ratio under conditions where conventional NMR is not possible, due to the low concentration of 31P and the small equilibrium polarization.
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Submitted 1 June, 2011; v1 submitted 29 September, 2010;
originally announced September 2010.
