Conceptual Design Report for the LUXE Experiment
Authors:
Halina Abramowicz,
Uwe Hernandez Acosta,
Massimo Altarelli,
Ralph Assmann,
Zhaoyu Bai,
Ties Behnke,
Yan Benhammou,
Thomas Blackburn,
Stewart Boogert,
Oleksandr Borysov,
Maryna Borysova,
Reinhard Brinkmann,
Marco Bruschi,
Florian Burkart,
Karsten Büßer,
Niall Cavanagh,
Oz Davidi,
Winfried Decking,
Umberto Dosselli,
Nina Elkina,
Alexander Fedotov,
Miroslaw Firlej,
Tomasz Fiutowski,
Kyle Fleck,
Mikhail Gostkin
, et al. (66 additional authors not shown)
Abstract:
This Conceptual Design Report describes LUXE (Laser Und XFEL Experiment), an experimental campaign that aims to combine the high-quality and high-energy electron beam of the European XFEL with a powerful laser to explore the uncharted terrain of quantum electrodynamics characterised by both high energy and high intensity. We will reach this hitherto inaccessible regime of quantum physics by analys…
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This Conceptual Design Report describes LUXE (Laser Und XFEL Experiment), an experimental campaign that aims to combine the high-quality and high-energy electron beam of the European XFEL with a powerful laser to explore the uncharted terrain of quantum electrodynamics characterised by both high energy and high intensity. We will reach this hitherto inaccessible regime of quantum physics by analysing high-energy electron-photon and photon-photon interactions in the extreme environment provided by an intense laser focus. The physics background and its relevance are presented in the science case which in turn leads to, and justifies, the ensuing plan for all aspects of the experiment: Our choice of experimental parameters allows (i) effective field strengths to be probed at and beyond the Schwinger limit and (ii) a precision to be achieved that permits a detailed comparison of the measured data with calculations. In addition, the high photon flux predicted will enable a sensitive search for new physics beyond the Standard Model. The initial phase of the experiment will employ an existing 40 TW laser, whereas the second phase will utilise an upgraded laser power of 350 TW. All expectations regarding the performance of the experimental set-up as well as the expected physics results are based on detailed numerical simulations throughout.
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Submitted 27 July, 2021; v1 submitted 3 February, 2021;
originally announced February 2021.
Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam
Authors:
U. Kruchonak,
S. Abou El-Azm,
K. Afanaciev,
G. Chelkov,
M. Demichev,
M. Gostkin,
A. Guskov,
E. Firu,
V. Kobets,
A. Leyva,
d,
A. Nozdrin,
S. Porokhovoy,
A. Sheremetyeva,
P. Smolyanskiy,
A. Torres,
A. Tyazhev,
O. Tolbanov,
N. Zamyatin,
A. Zarubin,
A. Zhemchugov
Abstract:
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20…
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The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current-voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.
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Submitted 1 June, 2020;
originally announced June 2020.
