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Radiation Effects on Scientific CMOS Detectors for X-ray Astronomy: II. Total Ionizing Dose Irradiation
Authors:
Mengxi Chen,
Zhixing Ling,
Mingjun Liu,
Qinyu Wu,
Chen Zhang,
Jiaqiang Liu,
Zhenlong Zhang,
Weimin Yuan,
Shuang-Nan Zhang
Abstract:
Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive choice for current and upcoming astronomical missions. To understand the performance variations of CMOS detectors in space environment, we investigate the total ionizing dose effects on custom-made large-format X-ray CMOS detectors. Three CMOS detector samples were irradiated with a Co-60 source with a total dose of 70 krad…
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Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive choice for current and upcoming astronomical missions. To understand the performance variations of CMOS detectors in space environment, we investigate the total ionizing dose effects on custom-made large-format X-ray CMOS detectors. Three CMOS detector samples were irradiated with a Co-60 source with a total dose of 70 krad and 105 krad. We test and compare the performance of these detectors before and after irradiation. After irradiation, the dark current increases by roughly 20 to 100 times, and the readout noise increases from 3 e- to 6 e-. The bias level at 50 ms integration time decreases by 13 to 18 Digital Number (DN) at -30 degree. The energy resolution increases from about 150 eV to about 170 eV at 4.5 keV at -30 degree. The conversion gain of the detectors varies for less than 2% after the irradiation. Furthermore, there are about 50 pixels whose bias at 50 ms has changed by more than 20 DN after the exposure to the radiation and about 30 to 140 pixels whose readout noise has increased by over 20 e- at -30 degree at 50 ms integration time. These results demonstrate that the performances of large-format CMOS detectors do not suffer significant degeneration in space environment.
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Submitted 23 March, 2024;
originally announced March 2024.
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Ground Calibration Result of the Lobster Eye Imager for Astronomy
Authors:
Huaqing Cheng,
Zhixing Ling,
Chen Zhang,
Xiao** Sun,
Shengli Sun,
Yuan Liu,
Yanfeng Dai,
Zhenqing Jia,
Haiwu Pan,
Wenxin Wang,
Donghua Zhao,
Yifan Chen,
Zhiwei Cheng,
Wei Fu,
Yixiao Han,
Junfei Li,
Zhengda Li,
Xiaohao Ma,
Yulong Xue,
Ailiang Yan,
Qiang Zhang,
Yusa Wang,
Xiongtao Yang,
Zijian Zhao,
Weimin Yuan
Abstract:
We report on results of the on-ground X-ray calibration of the Lobster Eye Imager for Astronomy (LEIA), an experimental space wide-field (18.6*18.6 square degrees) X-ray telescope built from novel lobster eye mirco-pore optics. LEIA was successfully launched on July 27, 2022 onboard the SATech-01 satellite. To achieve full characterisation of its performance before launch, a series of tests and ca…
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We report on results of the on-ground X-ray calibration of the Lobster Eye Imager for Astronomy (LEIA), an experimental space wide-field (18.6*18.6 square degrees) X-ray telescope built from novel lobster eye mirco-pore optics. LEIA was successfully launched on July 27, 2022 onboard the SATech-01 satellite. To achieve full characterisation of its performance before launch, a series of tests and calibrations have been carried out at different levels of devices, assemblies and the complete module. In this paper, we present the results of the end-to-end calibration campaign of the complete module carried out at the 100-m X-ray Test Facility at IHEP. The PSF, effective area and energy response of the detectors were measured in a wide range of incident directions at several X-ray line energies. The distributions of the PSF and effective areas are roughly uniform across the FoV, in large agreement with the prediction of lobster-eye optics. The mild variations and deviations from the prediction of idealized lobster-eye optics can be understood to be caused by the imperfect shapes and alignment of the micro-pores as well as the obscuration by the supporting frames, which can be well reproduced by MC simulations. The spatial resolution of LEIA defined by the FWHM of the focal spot ranges from 4-8 arcmin with a median of 5.7. The measured effective areas are in range of 2-3 $cm^2$ at ~1.25 keV across the entire FoV, and its dependence on photon energy is in large agreement with simulations. The gains of the CMOS sensors are in range of 6.5-6.9 eV/DN, and the energy resolutions in the range of ~120-140 eV at 1.25 keV and ~170-190 eV at 4.5 keV. These results have been ingested into the calibration database and applied to the analysis of the scientific data acquired by LEIA. This work paves the way for the calibration of the Wide-field X-Ray Telescope modules of the Einstein Probe mission.
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Submitted 11 December, 2023;
originally announced December 2023.
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Radiation effects on scientific CMOS sensors for X-ray astronomy: I. proton irradiation
Authors:
Mingjun Liu,
Zhixing Ling,
Qinyu Wu,
Chen Zhang,
Jiaqiang Liu,
Zhenlong Zhang,
Weimin Yuan,
Shuang-Nan Zhang
Abstract:
Complementary metal-oxide-semiconductor (CMOS) sensors are a competitive choice for future X-ray astronomy missions. Typically, CMOS sensors on space astronomical telescopes are exposed to a high dose of irradiation. We investigate the impact of irradiation on the performance of two scientific CMOS (sCMOS) sensors between -30 to 20 degree at high gain mode (7.5 times), including the bias map, read…
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Complementary metal-oxide-semiconductor (CMOS) sensors are a competitive choice for future X-ray astronomy missions. Typically, CMOS sensors on space astronomical telescopes are exposed to a high dose of irradiation. We investigate the impact of irradiation on the performance of two scientific CMOS (sCMOS) sensors between -30 to 20 degree at high gain mode (7.5 times), including the bias map, readout noise, dark current, conversion gain, and energy resolution. The two sensors are irradiated with 50 MeV protons with a total dose of 5.3*10^10 p/cm^2. After the exposure, the bias map, readout noise and conversion gain at various temperatures are not significantly degraded, nor is the energy resolution at -30 degree. However, after the exposure the dark current has increased by hundreds of times, and for every 20 degree increase in temperature, the dark current also increases by an order of magnitude. Therefore, at room temperature, the fluctuations of the dark currents dominate the noise and lead to a serious degradation of the energy resolution. Moreover, among the 4k * 4k pixels, there are about 100 pixels whose bias at 50 ms has changed by more than 10 DN (~18 e-), and about 10 pixels whose readout noise has increased by over 15 e- at -30 degree. Fortunately, the influence of the dark current can be reduced by decreasing the integration time, and the degraded pixels can be masked by regular analysis of the dark images. Some future X-ray missions will likely operate at -30 degree, under which the dark current is too small to significantly affect the X-ray performance. Our investigations show the high tolerance of the sCMOS sensors for proton radiation and prove their suitability for X-ray astronomy applications.
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Submitted 4 December, 2023;
originally announced December 2023.
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An Aluminum-coated sCMOS sensor for X-Ray Astronomy
Authors:
Qinyu Wu,
Zhixing Ling,
Chen Zhang,
Shuang-Nan Zhang,
Weimin Yuan
Abstract:
In recent years, tremendous progress has been made on scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors, making them a promising device for future space X-ray missions. We have customized a large-format sCMOS sensor, G1516BI, dedicated for X-ray applications. In this work, a 200 nm thick aluminum layer is successfully sputtered on the surface of this sensor. This Al-coated sensor,…
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In recent years, tremendous progress has been made on scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors, making them a promising device for future space X-ray missions. We have customized a large-format sCMOS sensor, G1516BI, dedicated for X-ray applications. In this work, a 200 nm thick aluminum layer is successfully sputtered on the surface of this sensor. This Al-coated sensor, named EP4K, shows consistent performance with the uncoated version. The readout noise of the EP4K sensor is around 2.5 e- and the dark current is less than 0.01 e-/pixel/s at -30 degree. The maximum frame rate is 20 Hz in the current design. The ratio of single pixel events of the sensor is 45.0%. The energy resolution can reach 153.2 eV at 4.51 keV and 174.2 eV at 5.90 keV at -30 degree. The optical transmittance of the aluminum layer is approximately 1e-8 to 1e-10 for optical lights from 365 to 880 nm, corresponding to an effective aluminum thickness of around 140 to 160 nm. The good X-ray performance and low optical transmittance of this Al-coated sCMOS sensor make it a good choice for space X-ray missions. The Lobster Eye Imager for Astronomy (LEIA), which has been working in orbit for about one year, is equipped with four pieces of EP4K sensors. Furthermore, 48 pieces of EP4K sensors are used on the Wide-field X-ray Telescope (WXT) on the Einstein Probe (EP) satellite, which will be launched at the end of 2023.
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Submitted 4 December, 2023; v1 submitted 23 October, 2023;
originally announced October 2023.
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The Lobster Eye Imager for Astronomy Onboard the SATech-01 Satellite
Authors:
Z. X. Ling,
X. J. Sun,
C. Zhang,
S. L. Sun,
G. **,
S. N. Zhang,
X. F. Zhang,
J. B. Chang,
F. S. Chen,
Y. F. Chen,
Z. W. Cheng,
W. Fu,
Y. X. Han,
H. Li,
J. F. Li,
Y. Li,
Z. D. Li,
P. R. Liu,
Y. H. Lv,
X. H. Ma,
Y. J. Tang,
C. B. Wang,
R. J. Xie,
Y. L. Xue,
A. L. Yan
, et al. (101 additional authors not shown)
Abstract:
The Lobster Eye Imager for Astronomy (LEIA), a pathfinder of the Wide-field X-ray Telescope of the Einstein Probe (EP) mission, was successfully launched onboard the SATech-01 satellite of the Chinese Academy of Sciences on 27 July 2022. In this paper, we introduce the design and on-ground test results of the LEIA instrument. Using state-of-the-art Micro-Pore Optics (MPO), a wide field-of-view (Fo…
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The Lobster Eye Imager for Astronomy (LEIA), a pathfinder of the Wide-field X-ray Telescope of the Einstein Probe (EP) mission, was successfully launched onboard the SATech-01 satellite of the Chinese Academy of Sciences on 27 July 2022. In this paper, we introduce the design and on-ground test results of the LEIA instrument. Using state-of-the-art Micro-Pore Optics (MPO), a wide field-of-view (FoV) of 346 square degrees (18.6 degrees * 18.6 degrees) of the X-ray imager is realized. An optical assembly composed of 36 MPO chips is used to focus incident X-ray photons, and four large-format complementary metal-oxide semiconductor (CMOS) sensors, each of 6 cm * 6 cm, are used as the focal plane detectors. The instrument has an angular resolution of 4 - 8 arcmin (in FWHM) for the central focal spot of the point spread function, and an effective area of 2 - 3 cm2 at 1 keV in essentially all the directions within the field of view. The detection passband is 0.5 - 4 keV in the soft X-rays and the sensitivity is 2 - 3 * 10-11 erg s-1 cm-2 (about 1 mini-Crab) at 1,000 second observation. The total weight of LEIA is 56 kg and the power is 85 W. The satellite, with a design lifetime of 2 years, operates in a Sun-synchronous orbit of 500 km with an orbital period of 95 minutes. LEIA is paving the way for future missions by verifying in flight the technologies of both novel focusing imaging optics and CMOS sensors for X-ray observation, and by optimizing the working setups of the instrumental parameters. In addition, LEIA is able to carry out scientific observations to find new transients and to monitor known sources in the soft X-ray band, albeit limited useful observing time available.
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Submitted 24 May, 2023;
originally announced May 2023.
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Investigating the image lag of a scientific CMOS sensor in X-ray detection
Authors:
Qinyu Wu,
Zhixing Ling,
Chen Zhang,
Quan Zhou,
Xinyang Wang,
Weimin Yuan,
Shuang-Nan Zhang
Abstract:
In recent years, scientific CMOS (sCMOS) sensors have been vigorously developed and have outperformed CCDs in several aspects: higher readout frame rate, higher radiation tolerance, and higher working temperature. For silicon image sensors, image lag will occur when the charges of an event are not fully transferred inside pixels. It can degrade the image quality for optical imaging, and deteriorat…
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In recent years, scientific CMOS (sCMOS) sensors have been vigorously developed and have outperformed CCDs in several aspects: higher readout frame rate, higher radiation tolerance, and higher working temperature. For silicon image sensors, image lag will occur when the charges of an event are not fully transferred inside pixels. It can degrade the image quality for optical imaging, and deteriorate the energy resolution for X-ray spectroscopy. In this work, the image lag of a sCMOS sensor is studied. To measure the image lag under low-light illumination, we constructed a new method to extract the image lag from X-ray photons. The image lag of a customized X-ray sCMOS sensor GSENSE1516BSI is measured, and its influence on X-ray performance is evaluated. The result shows that the image lag of this sensor exists only in the immediately subsequent frame and is always less than 0.05% for different incident photon energies and under different experimental conditions. The residual charge is smaller than 0.5 e- with the highest incident photon charge around 8 ke-. Compared to the readout noise level around 3 e-, the image lag of this sensor is too small to have a significant impact on the imaging quality and the energy resolution. The image lag shows a positive correlation with the incident photon energy and a negative correlation with the temperature. However, it has no dependence on the gain setting and the integration time. These relations can be explained qualitatively by the non-ideal potential structure inside the pixels. This method can also be applied to the study of image lag for other kinds of imaging sensors.
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Submitted 15 March, 2023;
originally announced March 2023.
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Improving the X-ray energy resolution of a scientific CMOS detector by pixel-level gain correction
Authors:
Qinyu Wu,
Zhixing Ling,
Xinyang Wang,
Chen Zhang,
Weimin Yuan,
Shuang-Nan Zhang
Abstract:
Scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors are finding increasingly more applications in astronomical observations, thanks to their advantages over charge-coupled devices (CCDs) such as a higher readout frame rate, higher radiation tolerance, and higher working temperature. In this work, we investigate the performance at the individual pixel level of a large-format sCMOS se…
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Scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors are finding increasingly more applications in astronomical observations, thanks to their advantages over charge-coupled devices (CCDs) such as a higher readout frame rate, higher radiation tolerance, and higher working temperature. In this work, we investigate the performance at the individual pixel level of a large-format sCMOS sensor, GSENSE1516BSI, which has 4096 * 4096 pixels, each of 15 μm in size. To achieve this, three areas on the sCMOS sensor, each consisting of 99 * 99 pixels, are chosen for the experiment. The readout noise, conversion gain and energy resolutions of the individual pixels in these areas are measured from a large number (more than 25,000) of X-ray events accumulated for each of the pixels through long time exposures. The energy resolution of these pixels can reach 140 eV at 6.4 keV at room temperature and shows a significant positive correlation with the readout noise. The accurate gain can also be derived individually for each of the pixels from its X-ray spectrum obtained. Variations of the gain values are found at a level of 0.56% statistically among the 30 thousand pixels in the areas studied. With the gain of each pixel determined accurately, a precise gain correction is performed pixel by pixel in these areas, in contrast to the standardized ensemble gain used in the conventional method. In this way, we could almost completely eliminate the degradation of energy resolutions caused by gain variations among pixels. As a result, the energy resolution at room temperature can be significantly improved to 124.6 eV at 4.5 keV and 140.7 eV at 6.4 keV. This pixel-by-pixel gain correction method can be applied to all kinds of CMOS sensors, and is expected to find interesting applications in X-ray spectroscopic observations in the future.
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Submitted 2 March, 2023;
originally announced March 2023.
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X-ray Performance of a Small Pixel Size sCMOS Sensor and the Effect of Depletion Depth
Authors:
Yu Hsiao,
Zhixing Ling,
Chen Zhang,
Wenxin Wang,
Quan Zhou,
Xinyang Wang,
Shuang-Nan Zhang,
Weimin Yuan
Abstract:
In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low readout noise. We tested the basic performance of a backside-illuminated (BSI) sCMOS sensor, which has a small pixel size of 6.5 um * 6.5 um. At a temperature of…
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In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low readout noise. We tested the basic performance of a backside-illuminated (BSI) sCMOS sensor, which has a small pixel size of 6.5 um * 6.5 um. At a temperature of -20C, The readout noise is 1.6 e, the dark current is 0.5 e/pixel/s, and the energy resolution reaches 204.6 eV for single-pixel events. The effect of depletion depth on the sensor's performance was also examined, using three versions of the sensors with different deletion depths. We found that the sensor with a deeper depletion region can achieve a better energy resolution for events of all types of pixel splitting patterns, and has a higher efficiency in collecting photoelectrons produced by X-ray photons. We further study the effect of depletion depth on charge diffusion with a center-of-gravity (CG) model. Based on this work, a highly depleted sCMOS is recommended for applications of soft X-ray spectroscop.
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Submitted 30 November, 2022;
originally announced November 2022.
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Design and test results of different aluminum coating layers on the sCMOS sensors for soft X-ray detection
Authors:
W. X. Wang,
Z. X. Ling,
C. Zhang,
W. M. Yuan,
S. N. Zhang
Abstract:
In recent years, tremendous progress has been made on complementary metal-oxide-semiconductor (CMOS) sensors for applications as X-ray detectors. To shield the visible light in X-ray detection, a blocking filter of aluminum is commonly employed. We designed three types of aluminum coating layers, which are deposited directly on the surface of back-illuminated sCMOS sensors during fabrication. A co…
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In recent years, tremendous progress has been made on complementary metal-oxide-semiconductor (CMOS) sensors for applications as X-ray detectors. To shield the visible light in X-ray detection, a blocking filter of aluminum is commonly employed. We designed three types of aluminum coating layers, which are deposited directly on the surface of back-illuminated sCMOS sensors during fabrication. A commercial 2k * 2k sCMOS sensor is used to realize these designs. In this work, we report their performance by comparison with that of an uncoated sCMOS sensor. The optical transmissions at 660 nm and 850 nm are measured, and the results show that the optical transmission reaches a level of about 10-9 for the 200 nm aluminum layer and about 10-4 for the 100 nm aluminum layer. Light leakage is found around the four sides of the sensor. The readout noise, fixed-pattern noise and energy resolution of these Al-coated sCMOS sensors do not show significant changes. The dark currents of these Al-coated sCMOS sensors show a noticeable increase compared with that of the uncoated sCMOS sensor at room temperatures, while no significant difference is found when the sCMOS sensors are cooled down to about -15 degree. The aluminum coatings show no visible crack after the thermal cycle and aging tests. Based on these results, an aluminum coating of a larger area on larger sCMOS sensors is proposed for future work.
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Submitted 30 November, 2022; v1 submitted 28 November, 2022;
originally announced November 2022.
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X-ray performance of a customized large-format scientifc CMOS detector
Authors:
Qinyu Wu,
Zhenqing Jia,
Wenxin Wang,
Zhixing Ling,
Chen Zhang,
Shuangnan Zhang,
Weimin Yuan
Abstract:
In recent years, the performance of Scientifc Complementary Metal Oxide Semiconductor (sCMOS) sensors has been improved signifcantly. Compared with CCD sensors, sCMOS sensors have various advantages, making them potentially better devices for optical and X-ray detection, especially in time-domain astronomy. After a series of tests of sCMOS sensors, we proposed a new dedicated high-speed, large-for…
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In recent years, the performance of Scientifc Complementary Metal Oxide Semiconductor (sCMOS) sensors has been improved signifcantly. Compared with CCD sensors, sCMOS sensors have various advantages, making them potentially better devices for optical and X-ray detection, especially in time-domain astronomy. After a series of tests of sCMOS sensors, we proposed a new dedicated high-speed, large-format X-ray detector in 2016 cooperating with Gpixel Inc. This new sCMOS sensor has a physical size of 6 cm by 6 cm, with an array of 4096 by 4096 pixels and a pixel size of 15 um. The frame rate is 20.1 fps under current condition and can be boosted to a maximum value around 100 fps. The epitaxial thickness is increased to 10 um compared to the previous sCMOS product. We show the results of its frst taped-out product in this work. The dark current of this sCMOS is lower than 10 e/pixel/s at 20C, and lower than 0.02 e/pixel/s at -30C. The Fixed Pattern Noise (FPN) and the readout noise are lower than 5 e in high-gain situation and show a small increase at low temperature. The energy resolution reaches 180.1 eV (3.1%) at 5.90 keV for single-pixel events and 212.3 eV (3.6%) for all split events. The continuous X-ray spectrum measurement shows that this sensor is able to response to X-ray photons from 500 eV to 37 keV. The excellent performance, as demonstrated from these test results, makes sCMOS sensor an ideal detector for X-ray imaging and spectroscopic application.
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Submitted 30 September, 2022;
originally announced September 2022.
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Design and test results of scientific X-ray CMOS cameras
Authors:
Wenxin Wang,
Zhixing Ling,
Chen Zhang,
Qiong Wu,
Zhenqing Jia,
Xinyang Wang,
Weimin Yuan,
Shuang-Nan Zhang
Abstract:
In recent years, scientific CMOS (sCMOS) sensors have found increasing applications to X-ray detection, including X-ray astronomical observations. In order to examine the performance of sCMOS sensors, we have developed X-ray cameras based on sCMOS sensors. Two cameras, CNX22 and CNX 66, have been developed using sCMOS sensors with a photosensitive area of 2 cm * 2 cm and 6 cm * 6 cm, respectively.…
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In recent years, scientific CMOS (sCMOS) sensors have found increasing applications to X-ray detection, including X-ray astronomical observations. In order to examine the performance of sCMOS sensors, we have developed X-ray cameras based on sCMOS sensors. Two cameras, CNX22 and CNX 66, have been developed using sCMOS sensors with a photosensitive area of 2 cm * 2 cm and 6 cm * 6 cm, respectively. The designs of the cameras are presented in this paper. The CNX22 camera has a frame rate of 48 fps, whereas CNX66 has a frame rate of currently 20 fps, that can be boosted to 100 fps in the future. The operating temperature of the sCMOS sensor can reach to -20C for CNX22 and -30C for CNX66 with a peltier cooler device. In addition to the commonly used mode of saving original images, the cameras provide a mode of real-time extraction of X-ray events and storage their information, which significantly reduces the requirement for data storage and offline analysis work. For both cameras, the energy resolutions can reach less than 200 eV at 5.9 keV using single-pixel events. These cameras are suitable for X-ray spectroscopy applications in laboratories and calibration for the space X-ray telescopes.
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Submitted 27 September, 2022;
originally announced September 2022.