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First results on monolithic CMOS detector with internal gain
Authors:
U. Follo,
G. Gioachin,
C. Ferrero,
M. Mandurrino,
M. Bregant,
S. Bufalino,
F. Carnesecchi,
D. Cavazza,
M. Colocci,
T. Corradino,
M. Da Rocha Rolo,
G. Di Nicolantonio,
S. Durando,
G. Margutti,
M. Mignone,
R. Nania,
L. Pancheri,
A. Rivetti,
B. Sabiu,
G. G. A. de Souza,
S. Strazzi,
R. Wheadon
Abstract:
In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $μ$m. This prototype is formed by a pixel array where each pixel has a total size of 100 $μ$m $\times$ 250 $μ$m and includes a high-speed front-end amplifier. After describing the sensor and the elect…
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In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $μ$m. This prototype is formed by a pixel array where each pixel has a total size of 100 $μ$m $\times$ 250 $μ$m and includes a high-speed front-end amplifier. After describing the sensor and the electronics architecture, both laboratory and in-beam measurements are reported and described. Optical characterisations performed with an IR pulsed laser setup have shown a sensor internal gain of about 2.5. With the same experimental setup, the electronic jitter was found to be between 50 ps and 150 ps, depending on the signal amplitude. Moreover, the analysis of a test beam performed at the Proton Synchrotron (PS) T10 facility of CERN with 10 GeV/c protons and pions indicated that the overall detector time resolution is in the range of 234 ps to 244 ps. Further TCAD investigations, based on the do** profile extracted from $C(V)$ measurements, confirmed the multiplication gain measured on the test devices. Finally, TCAD simulations were used to tune the future do** concentration of the gain layer implant, targeting sensors with a higher avalanche gain. This adjustment is expected to enhance the timing performance of the sensors of the future productions, in order to cope with the high event rate expected in most of the near future high-energy and high-luminosity physics experiments, where the time resolution will be essential to disentangle overlap** events and it will also be crucial for Particle IDentification (PID).
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Submitted 28 June, 2024;
originally announced June 2024.
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Measurements of the Cherenkov effect in direct detection of charged particles with SiPMs
Authors:
F. Carnesecchi,
B. Sabiu,
S. Strazzi,
G. Vignola,
N. Agrawal,
A. Alici,
P. Antonioli,
S. Arcelli,
F. Bellini,
D. Cavazza,
L. Cifarelli,
M. Colocci,
S. Durando,
F. Ercolessi,
D. Falchieri,
A. Ficorella,
C. Fraticelli,
M. Garbini,
M. Giacalone,
A. Gola,
D. Hatzifotiadou,
N. Jacazio,
A. Margotti,
G. Malfattore,
R. Nania
, et al. (12 additional authors not shown)
Abstract:
In this paper, different Silicon PhotoMultiplier (SiPM) sensors have been tested with charged particles to characterize the Cherenkov light produced in the sensor protection layer. A careful position scan of the SiPM response has been performed with different prototypes, confirming the large number of firing cells and proving almost full efficiency, with the SiPM filling factor essentially negligi…
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In this paper, different Silicon PhotoMultiplier (SiPM) sensors have been tested with charged particles to characterize the Cherenkov light produced in the sensor protection layer. A careful position scan of the SiPM response has been performed with different prototypes, confirming the large number of firing cells and proving almost full efficiency, with the SiPM filling factor essentially negligible. This study also allowed us to study the time resolution of such devices as a function of the number of firing cells, reaching values below 20 ps. These measurements provide significant insight into the capabilities of SiPM sensors in direct detection of charged particles and their potential for several applications.
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Submitted 28 May, 2023;
originally announced May 2023.
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Understanding the direct detection of charged particles with SiPMs
Authors:
F. Carnesecchi,
G. Vignola,
N. Agrawal,
A. Alici,
P. Antonioli,
S. Arcelli,
F. Bellini,
D. Cavazza,
L. Cifarelli,
M. Colocci,
S. Durando,
F. Ercolessi,
A. Ficorella,
C. Fraticelli,
M. Garbini,
M. Giacalone,
A. Gola,
D. Hatzifotiadou,
N. Jacazio,
A. Margotti,
G. Malfattore,
R. Nania,
F. Noferini,
G. Paternoster,
O. Pinazza
, et al. (11 additional authors not shown)
Abstract:
In this paper evidence that the increased response of SiPM sensors to the passage of charged particles is related mainly to Cherenkov light produced in the protection layer is reported. The response and timing properties of sensors with different protection layers have been studied.
In this paper evidence that the increased response of SiPM sensors to the passage of charged particles is related mainly to Cherenkov light produced in the protection layer is reported. The response and timing properties of sensors with different protection layers have been studied.
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Submitted 20 October, 2022;
originally announced October 2022.
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Direct detection of charged particles with SiPMs
Authors:
F. Carnesecchi,
G. Vignola,
N. Agrawal,
A. Alici,
P. Antonioli,
S. Arcelli,
F. Bellini,
D. Cavazza,
L. Cifarelli,
M. Colocci,
S. Durando,
F. Ercolessi,
M. Garbini,
M. Giacalone,
D. Hatzifotiadou,
N. Jacazio,
A. Margotti,
G. Malfattore,
R. Nania,
F. Noferini,
O. Pinazza,
R. Preghenella,
R. Ricci,
L. Rignanese,
N. Rubini
, et al. (5 additional authors not shown)
Abstract:
The direct response of Silicon PhotoMultipliers being traversed by a MIP charged particle have been studied in a systematic way for the first time. Using beam test data, time resolution and the crosstalk probability have been measured. A characterization of the SiPM by means of a laser beam is also reported. The results obtained for different sensors indicate a measured time resolution around 40-7…
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The direct response of Silicon PhotoMultipliers being traversed by a MIP charged particle have been studied in a systematic way for the first time. Using beam test data, time resolution and the crosstalk probability have been measured. A characterization of the SiPM by means of a laser beam is also reported. The results obtained for different sensors indicate a measured time resolution around 40-70 ps. Although particles are expected to traverse only one SPAD per event, crosstalk measurements on different sensors indicate an unexpected higher value with respect to the one related to the sensor noise.
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Submitted 27 March, 2022; v1 submitted 8 February, 2022;
originally announced February 2022.
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SiPM-matrix readout of two-phase argon detectors using electroluminescence in the visible and near infrared range
Authors:
The DarkSide collaboration,
C. E. Aalseth,
S. Abdelhakim,
P. Agnes,
R. Ajaj,
I. F. M. Albuquerque,
T. Alexander,
A. Alici,
A. K. Alton,
P. Amaudruz,
F. Ameli,
J. Anstey,
P. Antonioli,
M. Arba,
S. Arcelli,
R. Ardito,
I. J. Arnquist,
P. Arpaia,
D. M. Asner,
A. Asunskis,
M. Ave,
H. O. Back,
V. Barbaryan,
A. Barrado Olmedo,
G. Batignani
, et al. (290 additional authors not shown)
Abstract:
Proportional electroluminescence (EL) in noble gases is used in two-phase detectors for dark matter searches to record (in the gas phase) the ionization signal induced by particle scattering in the liquid phase. The "standard" EL mechanism is considered to be due to noble gas excimer emission in the vacuum ultraviolet (VUV). In addition, there are two alternative mechanisms, producing light in the…
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Proportional electroluminescence (EL) in noble gases is used in two-phase detectors for dark matter searches to record (in the gas phase) the ionization signal induced by particle scattering in the liquid phase. The "standard" EL mechanism is considered to be due to noble gas excimer emission in the vacuum ultraviolet (VUV). In addition, there are two alternative mechanisms, producing light in the visible and near infrared (NIR) ranges. The first is due to bremsstrahlung of electrons scattered on neutral atoms ("neutral bremsstrahlung", NBrS). The second, responsible for electron avalanche scintillation in the NIR at higher electric fields, is due to transitions between excited atomic states. In this work, we have for the first time demonstrated two alternative techniques of the optical readout of two-phase argon detectors, in the visible and NIR range, using a silicon photomultiplier matrix and electroluminescence due to either neutral bremsstrahlung or avalanche scintillation. The amplitude yield and position resolution were measured for these readout techniques, which allowed to assess the detection threshold for electron and nuclear recoils in two-phase argon detectors for dark matter searches. To the best of our knowledge, this is the first practical application of the NBrS effect in detection science.
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Submitted 26 February, 2021; v1 submitted 4 April, 2020;
originally announced April 2020.
