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A High-Voltage Characterisation Platform For Emerging Resistive Switching Technologies
Authors:
Jiawei Shen,
Andrea Mifsud,
Lijie Xie,
Abdulaziz Alshaya,
Christos Papavassiliou
Abstract:
Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a practical on-chip memristor-based system, it is essential to have the ability to apply large programming voltage ranges during the characterisation procedures fo…
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Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a practical on-chip memristor-based system, it is essential to have the ability to apply large programming voltage ranges during the characterisation procedures for various memristor technologies. This work presents a 16x16 high voltage memristor characterisation array employing high voltage CMOS circuitry. The proposed system has a maximum programming range of $\pm22V$ to allow on-chip electroforming and I-V sweep. In addition, a Kelvin voltage sensing system is implemented to improve the readout accuracy for low memristance measurements. This work addresses the limitation of conventional CMOS-memristor platforms which can only operate at low voltages, thus limiting the characterisation range and integration options of memristor technologies.
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Submitted 17 May, 2022;
originally announced May 2022.
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A Wide Dynamic Range Read-out System For Resistive Switching Technology
Authors:
Lijie Xie,
Jiawei Shen,
Andrea Mifsud,
Chaohan Wang,
Abdulaziz Alshaya,
Christos Papavassiliou
Abstract:
The memristor, because of its controllability over a wide dynamic range of resistance, has emerged as a promising device for data storage and analog computation. A major challenge is the accurate measurement of memristance over a wide dynamic range. In this paper, a novel read-out circuit with feedback adjustment is proposed to measure and digitise input current in the range between 20nA and 2mA.…
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The memristor, because of its controllability over a wide dynamic range of resistance, has emerged as a promising device for data storage and analog computation. A major challenge is the accurate measurement of memristance over a wide dynamic range. In this paper, a novel read-out circuit with feedback adjustment is proposed to measure and digitise input current in the range between 20nA and 2mA. The magnitude of the input currents is estimated by a 5-stage logarithmic current-to-voltage amplifier which scales a linear analog-to-digital converter. This way the least significant bit tracks the absolute input magnitude. This circuit is applicable to reading single memristor conductance, and is also preferable in analog computing where read-out accuracy is particularly critical. The circuits have been realized in Bipolar-CMOS-DMOS (BCD) Gen2 technology.
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Submitted 17 May, 2022;
originally announced May 2022.
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A CMOS-based Characterisation Platform for Emerging RRAM Technologies
Authors:
Andrea Mifsud,
Jiawei Shen,
Peilong Feng,
Lijie Xie,
Chaohan Wang,
Yihan Pan,
Sachin Maheshwari,
Shady Agwa,
Spyros Stathopoulos,
Shiwei Wang,
Alexander Serb,
Christos Papavassiliou,
Themis Prodromakis,
Timothy G. Constandinou
Abstract:
Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel…
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Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device's resistance range to be between 1k$Ω$ and 10M$Ω$ with a minimum voltage range of $\pm$1.5V on the device.
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Submitted 17 May, 2022;
originally announced May 2022.