An Energy-efficient Capacitive-Memristive Content Addressable Memory
Authors:
Yihan Pan,
Adrian Wheeldon,
Mohammed Mughal,
Shady Agwa,
Themis Prodromakis,
Alexantrou Serb
Abstract:
Content addressable memory is popular in the field of intelligent computing systems with its searching nature. Emerging CAMs show a promising increase in pixel density and a decrease in power consumption than pure CMOS solutions. This article introduced an energy-efficient 3T1R1C TCAM cooperating with capacitor dividers and RRAM devices. The RRAM as a storage element also acts as a switch to the c…
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Content addressable memory is popular in the field of intelligent computing systems with its searching nature. Emerging CAMs show a promising increase in pixel density and a decrease in power consumption than pure CMOS solutions. This article introduced an energy-efficient 3T1R1C TCAM cooperating with capacitor dividers and RRAM devices. The RRAM as a storage element also acts as a switch to the capacitor divider while searching for content. CAM cells benefit from working parallel in an array structure. We implemented a 64 x 64 array and digital controllers to perform with an internal built-in clock frequency of 875MHz. Both data searches and reads take 3x clock cycles. Its worst average energy for data match is reported to be 1.71 fJ/bit-search and the worst average energy for data miss is found with 4.69 fJ/bit-search. The prototype is simulated and fabricated in 0.18 um technology with in-lab RRAM post-processing. Such memory explores the charge domain searching mechanism and can be applied to data centers that are power-hungry.
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Submitted 17 January, 2024;
originally announced January 2024.
A CMOS-based Characterisation Platform for Emerging RRAM Technologies
Authors:
Andrea Mifsud,
Jiawei Shen,
Peilong Feng,
Lijie Xie,
Chaohan Wang,
Yihan Pan,
Sachin Maheshwari,
Shady Agwa,
Spyros Stathopoulos,
Shiwei Wang,
Alexander Serb,
Christos Papavassiliou,
Themis Prodromakis,
Timothy G. Constandinou
Abstract:
Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel…
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Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device's resistance range to be between 1k$Ω$ and 10M$Ω$ with a minimum voltage range of $\pm$1.5V on the device.
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Submitted 17 May, 2022;
originally announced May 2022.
